PN4140 Search Results

cs9011j

Abstract: MPS151 PN5180 MPS4424 BC5608 8c527-25 2N3304 BC5568 PN2897 MPS9633C
Contextual Info: CRIMSON SEMICONDUCTOR INC TT DE | 5 5 1 4 0 ^ 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC D T 99D 00293 DEVICF TYPE PACKAGE By.CEO BVCBO BVEBO ICBO @ VCB IV I M iN IV ! M .N . UN i- A l M Ah |V D0D0ET3 0 6 / - HFE @ VC & iC M Ah .V t—"A •

Contextual Info: PN41_10 POW-R-BLOK Common Anode Dual Diode Module 1000 Amperes / Up to 4000 Volts Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Description: Powerex Dual Diode Modules are designed for use in applications requiring rectification

PN4140

Abstract: PN3569 PN3641 PN3642 PN3643 PN3694 PN4141 PN4274 PN4275 PN5127
Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. PN3569 VcBO ^CEO ^EBO Min (V) Min (V) Min 80 40 5 M Electrical Characteristics (Ta=25 C. Unless Otherwise Specified) P0 0.625 ^C8 *CBO (W) (A) @Tc=25"c 0.5 m Max 'c e s 0 (V) (tJA) Max 0.05 hFE

Contextual Info: DEVICE type PACKAGE BVCEO 8VCB0 BVEBO 1CBO 0 VCB IV I M M |V | M M V M M HFE « VC & 1C COB M IN -M A X (V I Im A I 250 l.7uA 1,7uA 25 25 60 40 60 30 30 50-250 40-150 40-150 70-200 150-300 10 1 1 1 1 150 100 100 10 10 30 12 10 4 5 4.5 60 500 500 400 450

Contextual Info: TO-92 Plastic Package Transistors NPN Electrical Characteristics (Ta=25"C, U nless Otherwise Specified) Maximum Ratings Type No. ^C80 (V) Min 60 PN3569 ^CEO ^EBO M Min (V) Min 40 5 *c PD (W) (A) Tc-25'c 0.625 0.5 (|iA) Max 0.05 ^CB 'cts e (V) (MA) Man

bcs47

Abstract: BCS48 BC170C 8C548 BF494 ph 06 BC170B BF494 ph 04 cd639 BCS48B bf238
Contextual Info: 1 < 3 2 1 DIM MIN MAX A 4,32 5,33 8 4,45 T 5,20 C 3,18 4,19 D 0,41 0,55 E 0,35 0,50 F 5 DEG G 1,14 H 1,14 1,53 K 12,70 - 1,40 ALL D IM EN SIO N S IN M M. Pin Configuration Available in TO-92 S JÜ - A A SEC ^ CDU. Code Style Pin 1 TO-92 Pin 2 Pin 3 Emitter

Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. PN3569 V cbo ^CEO ^EBO (V) Min (V) Min (V) Min 80 40 5 Electrical Characteristics (Ta=25"C, Unless Otherwise Specified) Pd (W) (A) Tc=25"c 0.625 0.5 *CBO (PA) Max ^C8 ' c e s @ (V) (MA) Max

BF189

Abstract: NT2222 BSY21 TP3300 BF234 bf310 JE9101A 2sc2787l PE254 PE254C
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO , 5 10 15 20 25 30 35 40 45 50 55 60 70 75 80 85 90 fr (V) (Hz) 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 3U 30 30 30 30 30 30 30 30 30 ~~~;~P ~eelnoex BC413P BC413C BC413CP GES2221

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

sC3228

Abstract: BC286 bc 7-25 pnp MPS9681T BC527-25 BC5508 BC537 BC5568 2N5222 8C416
Contextual Info: CRIMSON SEMICONDUCTOR INC TT 25 14 09 6 C R I M S O N S E M I C O N D U C T O R 99D 00293 DEVICF 2N1507 2N1566 2N I613 2 N I7 U 2N1889 2N1890 TYPE NPN NPN NPN NPN NPN PACKAGE DE | S S I M Q T L INC D T Ô / - COB HFE @ VC & iC By.CEO BVCBO BVEBO ICBO @ VCB

BF244 datasheet

Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910
Contextual Info: Index Industry Part Number Central Process No. Page # Industry Part Number 1N456 .CPD64 . 216 1N456A.CPD64 . 216 1N457 .CPD64 . 216

PN5133

Abstract: PN3569 PN3641 PN3642 PN3643 PN3694 PN4140 PN4141 PN4274 PN4275
Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. ^C80 ^CEO ^EBO Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) (V) (V) (V) Min Min Min Pd 'c (W) (A) @Tc=25"c PN3569 80 40 5 0.625 0.5 PN3641 60 30 5 0.6 PN3642 PN3643 60 60

Contextual Info: TO-92 Plastic Package Transistors NPN >IL Maximum Ratings Type No. 0.625 (jiA) 8(V) Max 0.6 0.01 fyï @ (HA) @ (V) Max Min Max 20 20 50 40 35 25 20 PN2221A 75 40 0.625 0.01 25 20 60 40 35 25 20 PN2222 60 30 0.625 0.6 0.01 75 40 0.625 0.8 0.01 PN3564 0.625 0.05 0.05

2N5133

Abstract: TIS92 2N4286 cm 45-12 MPS6566 transistor 2N2712 2N3707 2N3827 2N915
Contextual Info: NATL SENICOND 6 5 0 1130 NATL {D ISCRETE} SEMICOND, àfl <D I S C R E T E L ' DeT| b S G H S D 00353^ 5 28C 35 3 9 5 o ' S O “ ' w •</) c Ç0 u. eg « Z 3 5 Q . Z ■gu. g 2 - E Ï— H < X « S es = > if o3 I « § £ * >u HI — >U S M in in in -U 1

MPS3388

Abstract: 2N3783 MPSS172 A5T3904 SDMFL 2N1711 2N1893 2N3704 pn4227 MPS3704
Contextual Info: s L MICRODEVICES INC ~ 14 D lF | s D 4 f lû 3 b OODDDTÛ b ^ ~ D GENERAL PURPOSE AMPLIFIERS AND MEDIUM-SPEED SWITCHES TYPE 2N1711 CASE STYLE BVc b o bvCEO b v eb o 'CBO Min Min Min Max 75V .5 0 VI 7V 10nA @ 1 20 V 80 V 7V T05 VCB 9 60 V 20 35 75 100-300 40

Q2N4401

Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Contextual Info: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog

ST3904

Abstract: NS3903 TIS92 2N2926 NS3904 2n2926 ses 2N915 MPQ3904 2N3694 2N2712
Contextual Info: NPN Transistors Case Style Vcbo V Min vCEO (V) Min Vebo (V) Min 2N2712 TO-92 (94) 1B 18 2N2714 TO-92 (94) 18 2N2923 TO-92 (94) 2N2924 VCE(SAT) VBE(SAT) A m p lifie r s . C0b (PF) Max a n d S w itc h e s toff (ns) Max NF (dB) Max Test Conditions Process No.