PN2222A ITT Search Results

PN2222A

Abstract: 1041A
Contextual Info: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET PN2222A NPN switching transistor 1999 May 21 Product specification Supersedes data of 1997 May 05 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN switching transistor PN2222A FEATURES

r2f transistor

Abstract: marking R2F PN2907A SST2907A MMST2222A MMST2907A SST2222A UMT2222A UMT2907A R2F marking
Contextual Info: UMT2907A / SST2907A / MMST2907A / PN2907A Transistors PNP Medium Power Transistor Switching UMT2907A / SST2907A / MMST2907A / PN2907A •Features •External dimensions (Units: mm) 1) BV ceo< -60V (lc=-10mA) 2) Complements the UMT2222A / SST2222A / MMST2222A / PN2222A.

Contextual Info: PN2907A PNP SMALL SIGNAL TRANSISTOR Features Epitaxial Planar Die Construction Available in Both Through-Hole and Surface Mount Packages Suitable for Switching and General Purpose Amplifier Applications Complementary NPN Type Available PN2222A KM hM TO-92

PN2222A le

Abstract: 100khz 5v transistor npn LC 300-S PN2222 PN2222A PN2907A
Contextual Info: PN2222A NPN SMALL SIGNAL TRANSISTOR Features Epitaxial Planar Die Construction Available in Both Through-Hole and Surface Mount Packages Ideal for Switching and Amplifier Applications Complementary PNP Type Available PN2907A KM h M TO-92 Mechanical Data

PN2222A le

Abstract: PN2222A
Contextual Info: PN2222A NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR - • Collector-Emitter Voltage: V Ce o = 4 0 V • Collector Dissipation: Pc max =625mW to -92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit VcBO 75 40 6 600

Contextual Info: Lead Mounted Transistors NPN Transistors/TO-92 Type Number 2N4124 2N5172 2N5088 PN2222A 2N3904 2N4401 MPSA05/ITTA05 MPSA06/ITTA06 2N5551 MPSA42 VCEO Volts 25 25 30 40 40 40 60 80 160 300 hpE @ V ce/Ic V/mA 120-360 100-750 350-1400 100-300 100-300 100-300 min. 50

Contextual Info: PN2222 PN2222A _y SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon planar epitaxial transistors in a plastic TO-92 package prim arily intended for linear and switching applications. P-N-P complement is PN2907/2907A. Q UICK REFERENCE D A T A

st2222a

Abstract: RXT2222A st 2222A transistor 2222a transistor 2222a to-92 r1p 11 TRANSISTOR sst2222a pn 2222a
Contextual Info: Transistors I NPN Medium Power Transistor Switching UMT2222A/SST2222A/MMST2222A/RXT2222A/PN2222A •Features •External dimensions (Units : mm) 1 } B V ceo< 4 0 V ( ¡c ~ 1 0 rn A ) 2 ) Com plem ents the U M T 2907A /S ST2907A /M M ST2907A /RXT2907A/PN 2907A.

2N3904 pin diagram

Abstract: ic pin diagram diodes inc 2N5551 2N3906 pin diagram 2N5551 diodes inc BC547 ITTA05 to-92 type 2n5401 2n3904 2N3904
Contextual Info: Lead M ounted Transistors NPN Transistors/TO-92 VCEO Volts 25 25 30 40 40 40 60 80 160 300 Type Number 2N4124 2N5172 2N5088 PN2222A 2N3904 2N4401 M PS A05/ITTA05 MPSA06/ITTA06 2N5551 MPSA42 hpE @ VCE/IC V/mA 1/2 120-360 10/10 100-750 350-1400 5/1 100-300 10/150

CT PN2222A

Contextual Info: ¡k SAMSUNG ELE CT RONICS INC PN2222A 42E P H 7*^4142 00CHG7S T I SMGK NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • C ollector-Em itter Voltage: V Ce o = 4 0 V • C o lle cto r D issip atio n : P 0 m a x = 6 2 5 m W ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

MMST2907A

Abstract: PN2907A RXT2907A SST2907A T106 UMT2907A rxt2907 TO-126F AGt marking code
Contextual Info: Transistors PNP Medium Power Transistor Switching I UM T2907A / SST2907A/M M ST2907A / RXT2907A / PN2907A •F e a tu r e s •E x te r n a l dim ensions (Units : mm) 1) BVceo<—40V ( l c = — 10mA) 2 ) Complements the UMT2222A/SST2222A/MMST2222A/ RXT2222A/PN2222A.

pn2222a

Abstract: PN2222 pnp PN2222A le PN2222
Contextual Info: II N AMER PHILIPS/DISCRETE bTE D • bbSB'm DDSflOMb 244 ■ APX PN2222 PN2222A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon planar epitaxial transistors in a plastic TO-92 envelope prim arily intended fo r linear and switching applications. P-N-P complement is PN2907/2907A.

2222a

Abstract: 5ns turnon time npn transistors 2907 GES MPS2222A PN2222A 2221A 22a ic GES2221A GES2906 MPS2906
Contextual Info: E SOLI» STATE DI dF 3875081 G E SOLID STATE | 3Û75DÛ1 DDlT^bM □ 01E 17964 D Signal Transistors GES2906, 6A, 7, 7A, MPS2906, 6A, 7, 7A, GES2221A, 22A, MPS2222A, PN2222A Silicon Transistors Features: • Low leakage currents ■ High speed switching ■ Epoxy encapsulation with proved reliablity - excellent characteristic stability under

Contextual Info: S E M IC O M Ü U C T O R r f,i 2N4953 T O -9 2 'V & * ' CÊ NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 19. See PN2222A for characteristics.

p*502

Contextual Info: S E M I C O N D U C T O R ¡m MMPQ6502 SOIC-16 Quad NPN & PNP General Purpose Amplifier These com plim entary devices can be used in m edium power amplifiers, drivers and sw itches w ith co lle cto r currents to 500 mA. T hese devices are best used when space is the primary consideration. Sourced from Process 19 & 63. See PN2222A

N2222A

Abstract: st2222A RXT2222A st2222 N2222 MMST2222A PN2222A SST2222A T10B UMT2222A
Contextual Info: Transistors i NPN Medium Power Transistor Switching U M T2222A /SS T2222A/M M S T2222A/R XT2222A/P N 2222A •E x te r n a l dimensions (Units : mm) • Features 1 ) B V ceo < 4 0 V (lc = 1 0 m A ) UM T2222A 2 ) Complements the UMT2907A/SST2907A/MMST2907A

KSP2222A

Contextual Info: KSP2222A NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: Vc io =40V • Collector DlMlpatlon: Pc max =625mW TO-92 ABSOLUTE MAXIMUM RATINGS (T.=25°C) Characteristic Symbol Rating Unit VcBO 75 40 6 600 625 150 -5 5 -1 5 0

MMPQ6502

Abstract: PN2222A PN2907A SOIC-16
Contextual Info: S S E fv llG O fs lO L J C îT Q R MMPQ6502 SOIC-16 Quad NPN & PNP General Purpose Amplifier These com plim entary devices can be used in medium power amplifiers, drivers and sw itches w ith co lle cto r currents to 500 mA. These devices are best used when

2N3904 TO92

Contextual Info: IliUIGE HIGH SPEED SWITCHING DIODES 250mW/500mW DO-35 CASE 28 _ ' _ 1_ OPERATING/STORAGE TEMPERATURE RANGE -6 5 C to +200°C Peak Reverse voltage VRM (V) 100 100 100 100 50 75 35 100

SST222A

Abstract: MMST2222A PN2222A SST6838 SST6839 T116
Contextual Info: Transistors SST6838 NPN General Purpose Transistor SST6838 • E x t e r n a l d im e n s io n s U n its : m m • F e a tu re s 1 ) BVceo minimum is 40V (lc = 1 m A ) 2 ) Complements the SST6839. SST6838 ,1.9±0.2 10.950.95 • P a c k ag e , m a rk in g , and p a c k a g in g s p e c ific a tio n s

Contextual Info: TAIWAN LITON E L E C T R O N I C MTE » • 0035^5 0 0 0 4 0 7 b 5ÖÖ ■ TLIT LEAD MOUNTED TRANSISTORS 'T-v-zi NPN T R A N SIST O R S TO-92 PLASTIC C A SE 625 m W @ TL = 25°C 2mm FRO M C A SE C H A R A C T ER IST IC S @ Ta 25°C Type Number 2N3903 2N3904

MPSA08

Contextual Info: Lead Mounted Transistors NPN Transistors/TO-92 Type Number VCEO Volts hfE @ ^ ce/Ic V/mA Cqb @ Vcb max pF V Pin Diagram See Page 45 V/mA 4.0 5 10 — 20/10 — — 10 10 Fig. 1 Fig. 3 Fig. 1 20/20 20/10 10/20 8.0 10 5 5 Fig. 1 Fig. 1 Fig. 1 50/5 300 — 5/1

fairchild 2N2222A

Abstract: 2n2222a fairchild 2N2222 curve 2N2219 Fairchild 2N2219A FAIRCHILD SEMICONDUCTOR 2N1613 fairchild 2222A fairchild tr 2n2222 T145 2N2222-PN2222
Contextual Info: •FAIRCHILD SEMICONDUCTOR 7 fl4 DlF| 3 4 ^ b 7 4 ~ 0 0 E 7 S 0 4 S 3469674 FAIRCHILD SEMICONDUCTOR m m as&i\ f a i^ urn ram h i^ 84D 27504 2N 718A 2N 1613 T - ^ - D H ¿3 A Schlumberger Company NPN Small Signal General Purpose Am plifiers • • Vceo . . . 32 V Min

Contextual Info: Transistors UMT4401 / SST4401 / MMST4401 /2N4401 NPN Medium Power Transistor Switching I UMT4401 /SST4401 /MMST4401 /2N4401 •Features •E xternal dimensions (Units : mm) 1 ) BV ceo< 40V (lc = 1 m A ) 2 ) Complements the UMT4403/SST4403/MMST4403/PN4403