PN PHOTODIODE Search Results

Contextual Info: KODENSHI CORP Ed!* — 25E D 5242b0fl Q0Dai3T 1 • I f — LASER D E TE C TO R S PN-4-125LD, PN-4-150LD, PN-4-46LD, PN-4-254LD, PN-4-27LD W\ h ¥ 4 * - K 7 H ’ X 'T» 4 '5 < 7 a it * < I To DIMENSIONS Unit:mm) The PN-4-125LD, PN-4-150LD, PN-4-254LD, and PN-4-27LD

Contextual Info: KODENSHI CORP 2SE D • 5245b0fl.DQQQ31S b \ j — & t - h i - s s — L \ A PUNCH TAPE •PUNCH CARD READERS Q iJ * ¥* ■ — ^ r PN^-63 PN-9-254A, PN-9-254RC, PN-l2-635 i, K r ix - f 7 \ /N’ > f h y 'f 't f - DIMENSIONS (Unit: mm The PN-9-254A, PN-9-254RC, and PN-12-635 are detectors

PN-9-254RC

Abstract: 12635 G900 G-900 PN-12-635 G1200-2
Contextual Info: Myt>r i d A s s e s b I i e s ftinch tape, card readers P N -9 -2 5 4 A , P N -9-254R C , P N -12-635 m ttm PN-9-254A, PN -9-254RC, PN-12-635 » , DIMENSIONS Unit:mm PN-9-254A r o S i r t P g ^ f 'f o The PN-9-254A, PN-9-254RC, and PN-12-635 a re detectors

PHOTOVOLTAIC CELL

Abstract: Din 5033 fotodiode BPW12 high sensitivity photodiode visible light "PHOTOVOLTAIC CELL"
Contextual Info: Silizium-PN-Planar-Fotoelement/Fotodiode Silicon PN Planar Photovoltaic Cell/Photodiode Anwendung: Empfänger in elektronischen Steuer- und Regeleinrichtungen Application: Detector in electronic control and drive circuits Besondere Merkmale: • Für Fotodioden- und Fotoelem ent-Betrieb

Contextual Info: BPW21R Vishay Semiconductors Silicon PN Photodiode Description BPW21R is a planar Silicon PN photodiode in a hermetically sealed short TO-5 case, especially designed for high precision linear applications. Due to its extremely high dark resistance, the short

Contextual Info: BPW20RF Vishay Semiconductors Silicon PN Photodiode Description BPW20RF is a planar Silicon PN photodiode in a hermetically sealed short TO-5 case, especially designed for high precision linear applications. Due to its extremely high dark resistance, the short

BPW20RF

Contextual Info: BPW20RF Vishay Semiconductors Silicon PN Photodiode Description BPW20RF is a planar Silicon PN photodiode in a hermetically sealed short TO-5 case, especially designed for high precision linear applications. Due to its extremely high dark resistance, the short

Contextual Info: BPW20RF Vishay Semiconductors Silicon PN Photodiode Description BPW20RF is a planar Silicon PN photodiode in a hermetically sealed short TO-5 case, especially designed for high precision linear applications. Due to its extremely high dark resistance, the short

BPW2

Abstract: pn photodiode BPW21R
Contextual Info: BPW21R Vishay Semiconductors Silicon PN Photodiode Description BPW21R is a planar Silicon PN photodiode in a hermetically sealed short TO-5 case, especially designed for high precision linear applications. Due to its extremely high dark resistance, the short

PHOTOVOLTAIC CELL

Abstract: "PHOTOVOLTAIC CELL" bpw20 photovoltaic cell sensor photovoltaic sensor BPW 10 nf fotodiode 74138 DIN5033 0175A1
Contextual Info: BPW 20 'W Silizium-PN-Planar-Fotoelement/Fotodiode Silicon PN Planar Photovoltaic Cell/Photodiode Anwendung: Sensor für die Lichtmeßtechnik Application: Sensor for light m easuring purposes Besondere Merkmale: Features: • Für Fotodioden- und Fotoelem ent-Betrieb

bpw uv photodiode

Abstract: BPW20 BPW20R
Contextual Info: TELEFUNKEN Semiconductors BPW 20 R Silicon PN Photodiode Description BPW20R is a planar Silicon PN photodiode in a hermetically sealed short TO–5 case, especially designed for high precision linear applications. Due to its extremely high dark resistance, the

Contextual Info: BPW21R Vishay Telefunken Silicon PN Photodiode Description 94 8394 BPW21R is a planar Silicon PN photodiode in a hermetically sealed short TO–5 case, especially designed for high precision linear applications. Due to its extremely high dark resistance, the short

Contextual Info: BPW21R Vishay Telefunken Silicon PN Photodiode Description 94 8394 BPW21R is a planar Silicon PN photodiode in a hermetically sealed short TO–5 case, especially designed for high precision linear applications. Due to its extremely high dark resistance, the short

BPW21R

Abstract: BPW21 pn photodiode BPW2
Contextual Info: TELEFUNKEN Semiconductors BPW 21 R Silicon PN Photodiode Description 94 8394 BPW21R is a planar Silicon PN photodiode in a hermetically sealed short TO–5 case, especially designed for high precision linear applications. Due to its extremely high dark resistance, the

pn photodiode

Abstract: BPW21R 81519 photodiode PN
Contextual Info: BPW21R Vishay Telefunken Silicon PN Photodiode Description 94 8394 BPW21R is a planar Silicon PN photodiode in a hermetically sealed short TO–5 case, especially designed for high precision linear applications. Due to its extremely high dark resistance, the short

Silicon Photodiode Chip

Abstract: PD034
Contextual Info: SILICON PHOTODIODE CHIPS DEVICE NO. : PD-0340 1. Scope : This specification applies to PN silicon photodiode chips, Device NO. PD-0340. 2. Structure : 2-1. Planar type : PN Diode. 2-2. Electrodes : Top side Anode : Aluminum alloy . Back side ( Cathode ) : Gold alloy.

PD-0233

Abstract: 650nm
Contextual Info: SILICON PHOTODIODE CHIPS DEVICE NO. : PD-0233 1. Scope : This specification applies to PN silicon photodiode chips, Device NO. PD-0233 2. Structure : 2-1. Planar type : PN Diode. 2-2. Electrodes : Top side Anode : Aluminum Alloy . Back side ( Cathode ) : Gold Alloy.

PD-0240

Contextual Info: SILICON PHOTODIODE CHIPS DEVICE NO.: PD-0240 1. Scope: This specification applies to PN silicon photodiode chips, Device NO. PD-0240. 2. Structure: 2-1. Planar type: PN Diode. 2-2. Electrodes: Top side Anode : Aluminum alloy. Back side (Cathode ) : Gold alloy.

Contextual Info: SILICON PHOTODIODE CHIPS DEVICE NO. : PD-1240 1. Scope : This specification applies to PN silicon photodiode chips, Device No. PD-1240. 2. Structure : 2-1. Planar type : PN Diode. 2-2. Electrodes : Top side Anode : aluminum alloy . Top side ( Cathode ) : aluminum alloy

pn diode

Abstract: PD-0324 photodiode PN Silicon Photodiode Chip 0324
Contextual Info: SILICON PHOTODIODE CHIPS DEVICE NO. : PD-0324 1. Scope : This specification applies to PN silicon photodiode chips, Device no. PD-0324. 2. Structure : 2-1. Planar type : PN diode. 2-2. Electrodes : Top side Anode : Aluminum alloy . Back side ( Cathode ) : Gold alloy.

OPC9013

Abstract: OPC910 OPC911 OPC915 OPC925 quadrant photodiode
Contextual Info: 0 O P IE K Product Bulletin 0PC911 June 1993 PN Photodiodes Type OPC9XXX »TYPICAL PHOTODIODE »L- OXIDE SOLD . 0 1 0 f . 25 IOTI. DIMENSIONS ARE I» INCHES MILLIMETERS) Features Absolute Maximum Ratings(1) (Ta = 25°C unless otherwise noted) * PN photodiode elements

Contextual Info: BPW 20R VlSfrlAY Vishay Telefunken Silicon PN Photodiode Description BPW 20R is a planar Silicon PN photodiode in a hermetically sealed short TO -5 case, especially de­ signed for high precision linear applications. Due to its extremely high dark resistance, the short cir­

dual photodiode

Abstract: OPC922 pn photodiode OPC922WP
Contextual Info: optek Product Bulletin OPC922 July 1996 Dual Element Silicon PN Photodiode Type OPC922 Features Absolute Maximum Ratings^1* T a = 25 ° C unless otherw ise noted • 25 mil x 50 mil PN photodiode elements • Silicon nitride passivation • Anti-reflective coating

Contextual Info: BPW20R Vishay Semiconductors Silicon PN Photodiode Description BPW20R is a planar Silicon PN photodiode in a hermetically sealed short TO–5 case, especially designed for high precision linear applications. Due to its extremely high dark resistance, the short circuit photocurrent is linear over seven decades of