PN DIODE SPECIFICATIONS Search Results
PN DIODE SPECIFICATIONS Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| PEF24628EV1X | Rochester Electronics LLC | PEF24628 - SOCRATES Four-channel SHDSL EFM system-on-chip |
|
||
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet |
PN DIODE SPECIFICATIONS Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: Ordering number : ENA1263 PN type Photo Diode LA0225CV For Optical Disk Blue-purple Laser Diode monitor Overview LA0225CV is a photo diode for optical disk blue-purple laser diode monitor. Functions • The blue-purple sensitive PN type photo diode • Photo diode opening size: 1.0mm |
Original |
ena1263la0225cva1263-4/4 | |
laser diode 405nm
Abstract: "Photo Diode" a1263 LA0225CV 405nm diode 71608 blue Laser-Diode 405nm laser diode la0225
|
Original |
ena1263la0225cva1263-4/4laser diode 405nm+7 | |
transistor a1001
Abstract: 4 PC blue Laser-Diode la0225 405nm laser
|
Original |
ena1001ala0225csa1001-4/4transistor a1001+4 | |
|
Contextual Info: Ordering number : ENA1001A PN type Photo Diode LA0225CS For Optical Disk Blue-purple Laser Diode monitors Overview LA0225CS is a photo diode for optical disk blue-purple laser diode monitors. Functions • The blue-purple sensitive PN type photo diode • Photo diode opening size: 1.0mm |
Original |
ena1001ala0225csa1001-4/4 | |
405nm laserContextual Info: Ordering number : ENA0828A PN type Photo Diode LA0224CS For Optical Disk Blue-purple Laser Diode monitors Overview LA0224CS is a photo diode for optical disk blue-purple laser diode monitors. Functions • The blue-purple sensitive PN type photo diode • Photo diode opening size: 1.0mm |
Original |
ena0828ala0224csa0828-4/4405nm laser | |
|
Contextual Info: Ordering number : ENA0828 PN type Photo Diode LA0224CS For Optical Disk Blue-purple Laser Diode monitors Overview LA0224CS is a photo diode for optical disk blue-purple laser diode monitors. Functions • The blue-purple sensitive PN type photo diode • Photo diode opening size: 1.0mm |
Original |
ena0828la0224csa0828-4/4 | |
|
Contextual Info: Ordering number : EN*A1001 PN type Photo Diode LA0225CS For Optical Disk Blue-purple Laser Diode monitors Overview LA0225CS is a photo diode for optical disk blue-purple laser diode monitors. Functions • The blue-purple sensitive PN type photo diode • Photo diode opening size: 1.0mm |
Original |
a1001la0225csa1001-4/4 | |
|
Contextual Info: O rdering num ber: EN 5100 No.5100 /I _ FP108 SA iYO, TR : PN P Epitaxial Planar Silicon T ransistor SBD : Schottky B arrier Diode DC/DC Converter Applications F e a tu re s •Composite type with a PN P transistor and a Schottky b arrier diode contained in one packge, |
OCR Scan |
fp1082sb1121sb10-015cp | |
|
Contextual Info: Optointerrupter Specifications H22A4, H22A5, H22A6 Optointerrupter G a A s Infrared Emitting Diode Module with 1mm Aperture N PN Silicon Phototransistor The H22A Interrupter Module is a gallium arsenide infrared emitting diode coupled to a silicon phototransistor in a |
OCR Scan |
h22a4h22a5h22a6 | |
MCA231
Abstract: MCA230 MCA255
|
OCR Scan |
t-hl-85mca230mca231mca255+3 | |
infrared rContextual Info: Optointerrupter Specifications H23A1, H23A2 Matched Emitter-Detector Pair G a A s Infrared Emitting Diode and N PN Silicon Phototransistor T h e H23A1 is a matched emitter-detector pair which consists o f a gallium arsenide infrared em itting diode and a silicon |
OCR Scan |
h23a1h23a2infrared r | |
|
Contextual Info: BAT86 VISHAY Vishay Semiconductors Schottky Diode Features • For general purpose applications. • This diode features low turn-on voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. |
Original |
bat86bas86do-3508-apr-05 | |
|
Contextual Info: BAT86 VISHAY Vishay Semiconductors Schottky Diode Features • For general purpose applications. • This diode features low turn-on voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. |
Original |
bat86bas86do-35d-74025+1 | |
|
Contextual Info: BAT86 VISHAY Vishay Semiconductors Schottky Diode Features • For general purpose applications. • This diode features low turn-on voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. |
Original |
bat86bas86do-35d-74025+1 | |
|
|
|||
|
Contextual Info: BAS86 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. |
Original |
bas86do-35bat86aec-q101+3 | |
|
Contextual Info: LL46 www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES • For general purpose applications • This diode features low turn-on voltage and high break-down voltage. This device is protected by a PN junction guardring against excessive |
Original |
do-35bat46od-123bat46w-v+6 | |
BAT86Contextual Info: BAS86 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. |
Original |
bas86do-35bat86aec-q101+3 | |
|
Contextual Info: BAT41 www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES • For general purpose applications • This diode features low turn-on voltage and high breakdown voltage. This device is protected by a PN junction guard ring against excessive |
Original |
bat41aec-q101do-35tr/10k+4 | |
MINI-MELF DIODE markingsContextual Info: BAS86 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. |
Original |
bas86do-35bat86aec-q101+4 | |
|
Contextual Info: BAT41 www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES • For general purpose applications • This diode features low turn-on voltage and high breakdown voltage. This device is protected by a PN junction guard ring against excessive |
Original |
bat41aec-q101do-35tr/10k+4 | |
|
Contextual Info: BAS86 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. |
Original |
bas86do-35bat86aec-q101+3 | |
|
Contextual Info: BAS86 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. |
Original |
bas86do-35bat86aec-q101+3 | |
marking 02 sod
Abstract: SD103AW SD103AW-CA2-R SD103AW-CC2-R SD103AWL-CA2-R S4 DIODE schottky DIODE marking S4 sod schottky diode s4 SOD-123 marking V diode SOD DIODE marking S4 SOD-123
|
Original |
sd103awod-123od-523sd103awl+10 | |
BAT85 equivalent
Abstract: BAS85 BAT85 BAT85TR
|
Original |
bat85bas85do-35bat85-tr+5 | |