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    PMV250EPEA Search Results

    PMV250EPEA Datasheets (2)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    PMV250EPEA215
    		NXP Semiconductors P-CHANNEL MOSFET Original PDF 727.03KB
    PMV250EPEAR
    		Nexperia USA Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 40V SOT23 Original PDF 721.4KB
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    PMV250EPEA Price and Stock

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    Nexperia PMV250EPEAR

    MOSFET P-CH 40V 1.5A TO236AB
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    DigiKey () PMV250EPEAR Digi-Reel 1
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    PMV250EPEAR Tape & Reel 3,000
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    PMV250EPEAR Cut Tape 1
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    Avnet Americas PMV250EPEAR Tape & Reel 53 Weeks, 1 Days 3,000
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    Mouser Electronics () PMV250EPEAR
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    PMV250EPEAR
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    Newark () PMV250EPEAR Cut Tape 5
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    PMV250EPEAR Tape & Reel 3,000
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    TME PMV250EPEAR 1
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    Chip 1 Exchange PMV250EPEAR 174,000
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    Avnet Asia PMV250EPEAR 26 Weeks 15,000
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    Win Source Electronics PMV250EPEAR 120,000
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    NXP Semiconductors PMV250EPEAR

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    Ameya Holding Limited PMV250EPEAR 278
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    Nexperia PMV250EPEA

    40 V, P-channel Trench MOSFET
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    Chip 1 Exchange PMV250EPEA 109,676
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    Vyrian PMV250EPEA 3,194
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    Win Source Electronics PMV250EPEA 15,000
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    PMV250EPEA Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SO T2 3 PMV250EPEA 40 V, P-channel Trench MOSFET 20 June 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PMV250EPEA O-236AB) AEC-Q101 PDF

    Contextual Info: SO T2 3 PMV250EPEA 40 V, P-channel Trench MOSFET 12 March 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PMV250EPEA O-236AB) AEC-Q101 PDF

    Contextual Info: SO T2 3 PMV250EPEA 40 V, P-channel Trench MOSFET 12 June 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PMV250EPEA O-236AB) AEC-Q101 PDF

    circuit diagram wireless spy camera

    Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
    Contextual Info: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint


    Original     		DFN1006D-2 OD882D) DFN1010D-3 OT1215) DFN2020MD-6 OT1220) DFN1608D-2 OD1608) DSN0603 OD962) circuit diagram wireless spy camera PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143 PDF