PMDT670UPE Search Results

Contextual Info: SO T6 66 PMDT670UPE 20 V, 550 mA dual P-channel Trench MOSFET Rev. 1 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET

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Contextual Info: Small-signal MOSFET Selection Guide Broad selection of small-signal MOSFETs for a wide range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today´s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety

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Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
Contextual Info: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint

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Contextual Info: Power MOSFET Selection Guide 2012 Smaller, faster, cooler 2 Table of contents 20 V – 25 V N-channel MOSFETs ������������������������������������������������������������������������������������������������������������ 9