| PMBD7000 |
|
Philips Semiconductors
|
High-speed double diode |
Original |
PDF
|
61.72KB |
12 |
| PMBD7000 |
|
Philips Semiconductors
|
Silicon Planar Epitaxial High Speed Diodes |
Original |
PDF
|
48.94KB |
3 |
| PMBD7000,185 |
|
NXP Semiconductors
|
PMBD7000 - PMBD7000 - Double high-speed switching diode |
Original |
PDF
|
109.16KB |
12 |
| PMBD7000,215 |
|
NXP Semiconductors
|
PMBD7000 - DIODE 0.215 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3, Signal Diode |
Original |
PDF
|
109.16KB |
12 |
| PMBD7000,215 |
|
NXP Semiconductors
|
High-speed double diode - Cd max.: 1.5 pF; Configuration: dual series ; IF max: 215 mA; IFSM max: 4 A; IR max: 500@VR=100V nA; IFRM: 450 mA; trr max: 4 ns; VFmax: 1@IF=50mA mV; VR max: 100 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
Original |
PDF
|
76.16KB |
9 |
| PMBD7000,235 |
|
NXP Semiconductors
|
PMBD7000 - DIODE 0.215 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3, Signal Diode |
Original |
PDF
|
109.16KB |
12 |
| PMBD7000,235 |
|
NXP Semiconductors
|
High-speed double diode - Cd max.: 1.5 pF; Configuration: dual series ; IF max: 215 mA; IFSM max: 4 A; IR max: 500@VR=100V nA; IFRM: 450 mA; trr max: 4 ns; VFmax: 1@IF=50mA mV; VR max: 100 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
Original |
PDF
|
76.16KB |
9 |
| PMBD7000T4 |
|
Philips Semiconductors
|
High-speed double diode |
Original |
PDF
|
61.72KB |
12 |
| PMBD7000T/R |
|
NXP Semiconductors
|
High-speed double diode - Cd max.: 1.5 pF; Configuration: dual series ; IF max: 215 mA; IFSM max: 4 A; IR max: 500@VR=100V nA; IFRM: 450 mA; trr max: 4 ns; VFmax: 1@IF=50mA mV; VR max: 100 V |
Original |
PDF
|
76.16KB |
9 |
| PMBD7000T/R |
|
Unknown
|
Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
Historical |
PDF
|
41.02KB |
1 |
