PM0262 Search Results

29F8100-12

Abstract: MX29F8100 MXIC flash disk controller
Contextual Info: INDEX PRELIMINARY MX29F8100 8M-BIT [1M x 8/512K x 16] CMOS SINGLE VOLTAGE FLASH MEMORY FEATURES • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance : 10,000 cycles Fast access time: 120/150ns Sector erase architecture - 8 equal sectors of 128k bytes each

MX29F8100

Contextual Info: PRELIMINARY MX29F8100 8M-BIT [1M x 8/512K x 16] CMOS SINGLE VOLTAGE FLASH MEMORY FEATURES • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance : 10,000 cycles Fast access time: 120/150ns Sector erase architecture - 8 equal sectors of 128k bytes each

29F8100-12

Abstract: MX29F8100
Contextual Info: Introduction Selection Guide PRELIMINARY MX29F8100 8M-BIT 1M x 8/512K x 16 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance : 10,000 cycles Fast access time: 120/150ns

Contextual Info: PRELIMINARY •U I w l— ■ M X 2 9 F 8 1 OO 8M-BIT [1M x 8/512K x 16] CMOS SINGLE VOLTAGE FLASH MEMORY FEATURES • 5V ± 10% write and erase • Page program operation - Internal address and data latches for 128 bytes/64 words per page - Page programming time: 3ms typical