PL 522 Search Results

CHF5225CNF

Abstract: POWER60
Contextual Info: PL IA NT Features CO M • *R oH S ■ ■ Applications DC to 4 GHz Flanged model Low VSWR ■ High power RF transmission CHF5225CNF Series 60 W Power RF Flanged Chip Termination General Specifications

AL203

Abstract: CHF5225CBF
Contextual Info: PL IA NT Features CO M • *R oH S ■ ■ Applications DC to 4 GHz Flanged model Low VSWR ■ High power RF transmission CHF5225CBF Series 60 W Power RF Flanged Chip Termination Absolute Ratings W Frequency .4.0 GHz

5218L

Abstract: LH140
Contextual Info: PL IA NT CO M *R oH S Features Applications • Formerly model ■ Current rating up to 20 A ■ Inductance range: 3.35 µH to 1000 µH ■ EMI filters ■ Output chokes ■ Smooting coils ■ RoHS compliant* 5200 Series - Hash Choke Electrical Specifications

Schematics 5250

Abstract: 5240 5230-RC 5218-RC 5219-RC 5220-RC 5240-RC 5248-RC 5258-RC schematic 5250
Contextual Info: NT IA PL M CO S oH *R Features Applications • Formerly J.W.Miller model ■ Current rating up to 20 A ■ Inductance range: 3.35 µH to 1000 µH ■ EMI filters ■ Output chokes ■ Smooting coils ■ RoHS compliant* 5200 Series - Hash Choke Electrical Specifications

GR-1089-CORE

Abstract: TISP3070H3 TISP3070H3SL TISP3080H3 TISP3095H3 TISP3115H3SL TISP3125H3SL TISP3210H3SL TISP3250H3SL TISP3350H3SL
Contextual Info: *R oH S CO M PL IA NT TISP3070H3SL THRU TISP3115H3SL, TISP3125H3SL THRU TISP3210H3SL, TISP3250H3SL THRU TISP3350H3SL DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP3xxxH3SL Overvoltage Protector Series TISP3xxxH3SL Overview This TISP device series protects central office, access and customer premise equipment against overvoltages on the telecom line. The

Contextual Info: UG58T7448HC-PL Data sheets can be downloaded at www.unigen.com 64M Bytes 8M x 64 bits SYNCHRONOUS DRAM MODULE PC133-COMPATIBLE SDRAM Unbuffered DIMM based on 9 pcs 8M x 8 SDRAM with LVTTL, 4 banks & 4K Refresh FEATURES • • • • • • • Voltage Relative to GND

K 3115

Contextual Info: *R oH S CO M PL IA NT TISP3070H3SL THRU TISP3115H3SL, TISP3125H3SL THRU TISP3210H3SL, TISP3250H3SL THRU TISP3350H3SL DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP3xxxH3SL Overvoltage Protector Series TISP3xxxH3SL Overview This TISP device series protects central office, access and customer premise equipment against overvoltages on the telecom line. The

Contextual Info: Customer Information Sheet DRAWING N o . : S H E E T 2 OF 2 1 M80- 522XXXXP SPECIFICATIONS: MATERIAL: MOULDING : G L A S S - F I L L E D PPS, U L 9 4 V - 0 , BLACK CONTACT : PHOSPHOR BRONZE PI CK & PL ACE CAP : PHOSPHOR BRONZE F IN IS H CONTACTS : N I C K E L A L L OVER CONTACTS

marking 102

Abstract: PM3340-100M-RC
Contextual Info: *R *RoHS oH C S OM CO P M LIA PL N IA T NT Features Applications • Formerly J.W.Miller model ■ Input/output of DC/DC converters ■ Height of 11.5 mm max. ■ Industrial electronics ■ Current rating up to 3.5 A ■ Power supplies for: • Portable communications equipment

Contextual Info: Hebei I.T. Shanghai Co., Ltd. SMD SPECIFICATION 型号: PL CC6 RGBCT 1Features/特 征：  Emitting Color/发光颜色：Red/Green/Blue/红色/绿色/蓝色  Lens Type/封装特性：Water clear/透明  Device Outline/外形特征：5.5x5.0×1.6（unit:mm）

NE68135

Abstract: transistor npn d 2078 common emitter bjt transistor bf 494 NE68133-T1B-A mje 3009
Contextual Info: SILICON TRANSISTOR NE681 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e E d w h o l w PL l as r e t o n o f a f r d e DESCRIPTION e o

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR5225/5226/5227 Silicon NPN epitaxial planar type (0.425) Unit: mm For muting 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 5˚ 0.2±0.1 2 (0.65) (0.65) (R2)

Inductors

Abstract: mini-l 41053 L-41050 L-41000 L-41001 L-41002 L-41003 L-41004 L-41051
Contextual Info: Miniature Encapsulated Inductors Schematic Encapsulated 1 Multi-Purpose High Inductance / Low Bias Low Inductance / High Bias Other Values Available 3 High Inductance / Low Bias Part Number L 1 (H) Q DCR (Ω) DCI ( mA ) L-41000 6.0 2.0 522 .912 L-41001

marking code E1 SMD 5pin

Abstract: SMD 5pin code E2 M3D452 BGA2031 2114 SMD marking code g1
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D452 BGA2031 MMIC variable gain amplifier Preliminary specification Supersedes data of 1999 Feb 26 1999 Jul 23 Philips Semiconductors Preliminary specification MMIC variable gain amplifier BGA2031 FEATURES PINNING • High gain

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D167 BGY2016 UHF amplifier module Product specification Supersedes data of 2000 Jan 04 2000 Oct 17 Philips Semiconductors Product specification UHF amplifier module BGY2016 FEATURES PINNING - SOT365A

BLA1011-200

Abstract: BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLA1011-200 Avionics LDMOS transistor Preliminary specification 2001 Feb 27 Philips Semiconductors Preliminary specification Avionics LDMOS transistor BLA1011-200 PINNING - SOT502A FEATURES • High power gain

S187 pll

Abstract: 3975-00 42750 s187 s89 FPD1 s143 equivalent S124
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿1P D 1 6 4 0 8 IM 192 OUTPUT TFT-LCD FULL-COLOR DRIVER D ESCRIPTIO N The jiPD16408 is a TFT-LCD source driver that utilizes a full-color display, and it is very suitable for 1280 x 1024 pixel class multi-media displays. The internal configuration is comprised of a 12-channel analog input pin, a 12channel x 16-bit shift register, and a 192-channel sample & hold circuit 2-latch type .

33 GP

Abstract: BLF2045 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF2045 UHF power LDMOS transistor Preliminary specification 1999 Jul 12 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF2045 PINNING - SOT467A FEATURES • High power gain PIN DESCRIPTION

751B-03

Abstract: SN54LSXXXJ SN74LSXXXD SN74LSXXXN 751B03 TTL 74ls133
Contextual Info: SN54/74LS133 13-INPUT NAND GATE 13-INPUT NAND GATE VCC 16 15 14 13 12 11 10 9 1 2 3 4 5 6 7 8 LOW POWER SCHOTTKY J SUFFIX CERAMIC CASE 620-09 GND 16 1 N SUFFIX PLASTIC CASE 648-08 16 1 16 1 D SUFFIX SOIC CASE 751B-03 ORDERING INFORMATION SN54LSXXXJ SN74LSXXXN

BLF2043F

Abstract: BP317 enamelled copper wire
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF2043F UHF power LDMOS transistor Preliminary specification 2000 Oct 19 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF2043F PINNING - SOT467C FEATURES • High power gain PIN DESCRIPTION

Case 449-02

Contextual Info: Document Number: MRF9582NT1 Rev. 1, 7/2006 Freescale Semiconductor Technical Data Silicon Lateral FET, N-Channel Enhancement-Mode MOSFET MRF9582NT1 849 MHz, 38 dBm, 12.5 V HIGH FREQUENCY POWER TRANSISTOR LDMOS FET 3 1 ARCHIVE INFORMATION ARCHIVE INFORMATION

AN3461

Abstract: MMA8450Q AN3916 AN3915
Contextual Info: AN3915 Rev 1, 04/2010 Freescale Semiconductor Application Note Embedded Orientation Detection Using the MMA8450Q by: Kimberly Tuck Applications Engineer 1.0 Introduction Many hand-held devices integrate consumer grade accelerometers into mobile handsets. By incorporating more

Contextual Info: Freescale Semiconductor Technical Data MPX5010 Rev 10, 05/2005 Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated MPX5010 MPXV5010G SERIES INTEGRATED PRESSURE SENSOR 0 to 10 kPa 0 to 1.45 psi 0.2 to 4.7 V OUTPUT

BLF2022-70

Abstract: BLF2047 ACPR10
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2022-70 UHF power LDMOS transistor Preliminary specification 2000 Sep 21 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF2022-70 PINNING FEATURES • High power gain