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    PJP75N75 Search Results

    PJP75N75 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    PJP75N75
    		PanJit Semiconductors 75V N-Channel Enhancement Mode MOSFET Original PDF 148.2KB 4

    PJP75N75 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    p75n75

    Contextual Info: PJP75N75 75V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@30A=11mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Converters and Power Motor Controls • Fully Characterized Avalanche Voltage and Current


    Original     		PJP75N75 2002/95/EC O-220AB MIL-STD-750 P75N75 p75n75 PDF

    p75n75

    Abstract: PJP75N75
    Contextual Info: PJP75N75 75V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@30A=12mΩ • RDS(ON), VGS@4.5V,IDS@30A=18mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Converters and Power Motor Controls


    Original     		PJP75N75 O-220AB MIL-STD-750 P75N75 p75n75 PJP75N75 PDF

    p75n75

    Abstract: PJP75N75
    Contextual Info: PJP75N75 75V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@30A=11mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Converters and Power Motor Controls • Fully Characterized Avalanche Voltage and Current


    Original     		PJP75N75 2002/95/EC O-220AB MIL-STD-750 P75N75 p75n75 PJP75N75 PDF

    P75N75

    Abstract: PJP75N75
    Contextual Info: PJP75N75 75V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@30A=11mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Converters and Power Motor Controls • Fully Characterized Avalanche Voltage and Current


    Original     		PJP75N75 2002/95/EC O-220AB MIL-STD-750 P75N75 P75N75 PJP75N75 PDF

    p75n75

    Abstract: IDS-30
    Contextual Info: PJP75N75 75V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@30A=11mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Converters and Power Motor Controls • Fully Characterized Avalanche Voltage and Current


    Original     		PJP75N75 2002/95/EC O-220AB MIL-STD-750 P75N75 100us p75n75 IDS-30 PDF