PJ 69 Search Results

pliotron

Abstract: PJ 75 PJ-21 pj 83 pj 59 "vacuum tube"
Contextual Info: PJ-21 ISSI ¡gip DESCRIPTION AND RATING PLIOTRON DESCRIPTIO N The PJ-21 is a high-vacuum tube designed for use grid power and uniform ity of characteristics are in amplification and relay applications. The low particularly valuable in m any control applications.

pj 67 diode

Abstract: pj 46 diode pj 44 diode pj+67+diode pj 68 diode
Contextual Info: SKM 600GB126D . $ * MI L2> :'/&44 .- &%564& 47&(6;6&C Absolute Maximum Ratings Symbol Conditions IGBT 123F $N * MI L2 A2 $N * KIJ L2 KMJJ 1 ?J B $( * PJ L2 Q?J B PJJ B U MJ 1 $N * KMI L2 KJ X4 $( * MI L2 QZJ B $( * PJ L2 [QJ B PJJ B $N * KIJ L2 MPPJ B

1850 0062

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS PJ Low Impedance, For Switching Power Supplies series Low impedance and high reliability withstanding 5000 hours load life at +105˚C 3000 / 2000 hours for smaller case sizes as specified below . Capacitance ranges available based on the numerical values in E12 series under JIS.

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS PJ Low Impedance, For Switching Power Supplies series Low impedance and high reliability withstanding 5000 hours load life at +105˚C 3000 / 2000 hours for smaller case sizes as specified below . Capacitance ranges available based on the numerical values in E12 series under JIS.

2.6 uf 400v

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS PJ Low Impedance, For Switching Power Supplies series Low impedance and high reliability withstanding 5000 hours load life at +105˚C 3000 / 2000 hours for smaller case sizes as specified below . Capacitance ranges available based on the numerical values in E12 series under JIS.

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS PJ Low Impedance, For Switching Power Supplies series Low impedance and high reliability withstanding 5000 hours load life at +105˚C 3000 / 2000 hours for smaller case sizes as specified below . Capacitance ranges available based on the numerical values in E12 series under JIS.

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS PJ Low Impedance, For Switching Power Supplies series Low impedance and high reliability withstanding 5000 hours load life at +105˚C 3000 / 2000 hours for smaller case sizes as specified below . Capacitance ranges available based on the numerical values in E12 series under JIS.

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS PJ Low Impedance, For Switching Power Supplies Approved by Reliability Center for Electronic Component, Japan-Certification No. RCJ-03-23C series Low impedance and high reliability withstanding 5000 hours load life at +105˚C 3000 / 2000 hours for smaller case sizes as specified below .

B52 transistor

Contextual Info: Thal mLUM HEWLETT PACKARD Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42000 Features This device is designed for use in low noise, wideband amplifier, • High Output Power: mixer and oscillator applications 21.0 dBm Typical Pj iB at 2.0 GHz

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS PJ Low Impedance, For Switching Power Supplies series Low impedance and high reliability withstanding 5000 hours load life at +105˚C 3000 / 2000 hours for smaller case sizes as specified below . Capacitance ranges available based on the numerical values in E12 series under JIS.

6P6C PLUG

Abstract: 6p6c jack
Contextual Info: MATERIAL AND FINISH Insulator: Glass filled Polyester, color black or gray, UL-94V-0 rated Contacts: 00.46m m Phosphor Bronze Gold plated see chart over Nickel M ECHANICAL SPECIFICATIONS: Life cycle: 750 cycles min. PJ-6P6C-1-05XX P J -4 P4C-1-05XX —“ 1 1 0 .0

ex 34063

Abstract: 34063 schematic 34063 application note
Contextual Info: W hot HEWLETT mLEM PACKARD 3.0 GHz Medium Power Silicon RFIC Amplifier Technical Data INA-34063 Features • +8 dBm Pj ¿3 at 1.9 GHz Surface Mount SOT-363 SC-70 Package • 21 dB Gain at 1.9 GHz • High Isolation 32 dB at 1.9 GHz • Single +3V Supply

SMD PJ 3236

Abstract: CD29S CD294BW A361 CD 294 ph 2369 6 PIN SMD 3236 S4 SMD 10-35 CD294
Contextual Info: CD 294 BW Series 4 000 at 105°C CD 29S PJ • Standard 105°C · General Industry smaller size CD 294 BW CD 296 KC longer life 105°C CD 293 BZ Item Characteristics Operating Temperature Range °C -40 ~ +105 Voltage Range (V) 16 ~ 100 -25 ~ +105 160 ~ 500

Contextual Info: Model 8718 Survey Meter Meter Features • Microprocessor-Based Design • 4 Line x 20 Character Display • One-Touch Zero • Displays Fields In Any Unit: mW/cm2, W/m2, V/m, A/m, V2/m2, A2/m2, pJ/cm3 and Percent of International Standards • Intuitive Operation with Help Screens

pj 042

Abstract: MS-018
Contextual Info: Package Outline 44-Lead PLCC Package Outline PJ .653x.653in body, .180in height (max), .050in pitch D D1 1 44 .048/.042 x 45O 6 .150 MAX .056/.042 x 45O 40 Note 1 (Index Area) .075 MAX E1 E Note 2 .020max (3 Places) Top View Vertical Side View View B A Base

Contextual Info: W hat HEWLETT« mLMÆ PACKARD Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42070 Features • High Output Power: 21.0 dBm Typical Pj dB at 2.0 GHz 20.5 dBm Typical Pi ¿b at 4.0 GHz • High Gain at 1 dB Compression: 15.0 dB Typical Gi ^ at 2.0 GHz

transistor 828

Abstract: HMU-PJAT1K-A00R1 HMU-PJAT1K-A01R1 HMU-PJAT1K-A02R1 HMU-PJAT1K-A03R1 HMU-PJAT1K-A04R1 HMU-PJAT1K-A05R1 HMU-PJAT1K-A06R1 HMU-PJAT1K-A07R1 HMU-PJAT1K-A08R1
Contextual Info: MU-PJ Type Optical Fixed Attenuators MU SC FC Refer to page 11 for details of the adapter. Harsh Environment •Features 1. User friendly push-pull mechanism Same push-pull operation mechanism as standerd SC fixed attenuator. Attenuators 2. Attenuation guaranteed over a wide bandwidth of 1310 ±30 nm and 1510 to 1620 nm for WDM.

ATF-25735

Abstract: pj 68 S2a Hewlett-Packard MICRO-X 5965-8710E transistor 81 110 w 85
Contextual Info: mam mL'EÆ PHA C K A R D ew lett 0.5-10 GHz General Purpose Gallium Arsenide FET Technical Data ATF-25735 Features • High O utput Power: 19.0 Bm Typical Pj dB at 4 GHz • High Gain: 12.5 dB Typical Gj dB at 4 GHz • Low N oise Figure: 1.2 dB Typical at 4 GHz

F2683

Contextual Info: That HEWLETT mi/LMPACKARD 2-16 GHz General Purpose Gallium Arsenide FET Technical Data A TF-26836 F e a tu r e s D escrip tio n • High Output Power: 18.0 dBm Typical Pj dB at 12 GHz The ATF-26836 is a high perfor­ mance gallium arsenide Schottkybarrier-gate field effect transistor

Contextual Info: 1 2 3 Ordering Inform ation : D* _ * pj Q d 1 T 4 * * * DPT Series * * * * Insulator : UL 9 4 V -0 PBT. T * Contact : Brass 1 . No. o f circuits 2 . Plating : U=Gold flash W =15?” gold Z = 3 0 ? ” gold over 3 0 ~ 5 0 ? ” nickel overall over 3 0 ~ 5 0 ? ” nickel overall

krc 118 048

Abstract: ZM02
Contextual Info: ADVANCE 2. 4 WIEG X 64 SDRAM DIMMs l^ iid R o r s i SYNCHRONOUS DRAM MODULE MT8LSD T 264A MT16LSD(T)464A FEATURES OPTIONS (DE-9) 2 Meg x 64 TSO P (shown), (DE-10) 4 Meg x 64 TSOP, (DE-25) 2 Meg x 64 SOJ, (DE-26) 4 Meg x 64 SOJ Sm Tm Q pj MARKING • Components

8 pin IC 34063

Abstract: 34063 34063 schematic MARKING A2a SOT363
Contextual Info: What H E W LET T 1 "KM PA C K A R D 3.0 GHz Medium Power Silicon RFIC Amplifier Technical Data INA-34063 Features Surface Mount SOT-363 SC-70 Package Applications Pin Connections and Package Marking • +8 dBm Pj dB at 1.9 GHz • 21 dB Gain at 1.9 GHz • High Isolation 32 dB at

Contextual Info: Whpt H E W L E T T mirÍM P A C K A R D 0 .5 -1 0 GHz General Purpose Gallium Arsenide FET Technical Data ATF-25735 Features • High O utput Power: 19.0 Bm Typical Pj dB at 4 GHz • High Gain: 12.5 dB Typical Gj dB at 4 GHz • Low N oise Figure: 1.2 dB Typical at 4 GHz

Contextual Info: VISH A Y SIM0204 INDUCTOR , HIGH Q MINI MEL DRALORiC' Features Sii s u f a s o r i CE>pjä r FHïTî •<:o sa i;» C 'o d e C e d r a ie C o te X;».V • Stable metal film on high quality ceramic • High Q values on higher frequencies • Compatible with vapor phase and infrared reflow soldering