PJ 67 Search Results

pj 67 diode

Abstract: pj 46 diode pj 44 diode pj+67+diode pj 68 diode
Contextual Info: SKM 600GB126D . $ * MI L2> :'/&44 .- &%564& 47&(6;6&C Absolute Maximum Ratings Symbol Conditions IGBT 123F $N * MI L2 A2 $N * KIJ L2 KMJJ 1 ?J B $( * PJ L2 Q?J B PJJ B U MJ 1 $N * KMI L2 KJ X4 $( * MI L2 QZJ B $( * PJ L2 [QJ B PJJ B $N * KIJ L2 MPPJ B

1850 0062

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS PJ Low Impedance, For Switching Power Supplies series Low impedance and high reliability withstanding 5000 hours load life at +105˚C 3000 / 2000 hours for smaller case sizes as specified below . Capacitance ranges available based on the numerical values in E12 series under JIS.

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS PJ Low Impedance, For Switching Power Supplies series Low impedance and high reliability withstanding 5000 hours load life at +105˚C 3000 / 2000 hours for smaller case sizes as specified below . Capacitance ranges available based on the numerical values in E12 series under JIS.

2.6 uf 400v

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS PJ Low Impedance, For Switching Power Supplies series Low impedance and high reliability withstanding 5000 hours load life at +105˚C 3000 / 2000 hours for smaller case sizes as specified below . Capacitance ranges available based on the numerical values in E12 series under JIS.

scr t9Gh_ _08

Abstract: t9gh
Contextual Info: 8 0 0 A Avg. 1250 RMS Up to 2 0 0 0 Volts 5 0 -1 0 0 fJis Fast Switching SCR T9G H.J08 Symbol <pD <PD, 0D 2 H <pj Ji L N M illim eters Inches Max. Min. Max. Min. 72.39 73.66 2.850 2.900 46.86 47.12 1.845 1.855 65.02 67.06 2.560 2.640 26.16 27.18 1.030 1.070

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS PJ Low Impedance, For Switching Power Supplies series Low impedance and high reliability withstanding 5000 hours load life at +105˚C 3000 / 2000 hours for smaller case sizes as specified below . Capacitance ranges available based on the numerical values in E12 series under JIS.

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS PJ Low Impedance, For Switching Power Supplies series Low impedance and high reliability withstanding 5000 hours load life at +105˚C 3000 / 2000 hours for smaller case sizes as specified below . Capacitance ranges available based on the numerical values in E12 series under JIS.

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS PJ Low Impedance, For Switching Power Supplies Approved by Reliability Center for Electronic Component, Japan-Certification No. RCJ-03-23C series Low impedance and high reliability withstanding 5000 hours load life at +105˚C 3000 / 2000 hours for smaller case sizes as specified below .

B52 transistor

Contextual Info: Thal mLUM HEWLETT PACKARD Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42000 Features This device is designed for use in low noise, wideband amplifier, • High Output Power: mixer and oscillator applications 21.0 dBm Typical Pj iB at 2.0 GHz

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS PJ Low Impedance, For Switching Power Supplies series Low impedance and high reliability withstanding 5000 hours load life at +105˚C 3000 / 2000 hours for smaller case sizes as specified below . Capacitance ranges available based on the numerical values in E12 series under JIS.

6P6C PLUG

Abstract: 6p6c jack
Contextual Info: MATERIAL AND FINISH Insulator: Glass filled Polyester, color black or gray, UL-94V-0 rated Contacts: 00.46m m Phosphor Bronze Gold plated see chart over Nickel M ECHANICAL SPECIFICATIONS: Life cycle: 750 cycles min. PJ-6P6C-1-05XX P J -4 P4C-1-05XX —“ 1 1 0 .0

AN-A006

Contextual Info: W hot HEWLETT mLEM PA C K A R D 3.0 GHz Wideband Silicon RFIC Amplifier Technical Data INA-32063 Features • 17 dB Gain at 1.9 GHz Surface Mount SOT-363 SC-70 Package • +3 dBm Pj jb at 1.9 GHz • Single +3V Supply • Unconditionally Stable Applications

ex 34063

Abstract: 34063 schematic 34063 application note
Contextual Info: W hot HEWLETT mLEM PACKARD 3.0 GHz Medium Power Silicon RFIC Amplifier Technical Data INA-34063 Features • +8 dBm Pj ¿3 at 1.9 GHz Surface Mount SOT-363 SC-70 Package • 21 dB Gain at 1.9 GHz • High Isolation 32 dB at 1.9 GHz • Single +3V Supply

SMD PJ 3236

Abstract: CD29S CD294BW A361 CD 294 ph 2369 6 PIN SMD 3236 S4 SMD 10-35 CD294
Contextual Info: CD 294 BW Series 4 000 at 105°C CD 29S PJ • Standard 105°C · General Industry smaller size CD 294 BW CD 296 KC longer life 105°C CD 293 BZ Item Characteristics Operating Temperature Range °C -40 ~ +105 Voltage Range (V) 16 ~ 100 -25 ~ +105 160 ~ 500

ST-14

Abstract: RCA32 RCA 32 Scans-0017399
Contextual Info: -*-1 M A X .-* k - —— PJ RCA-32 RADIO-FREQUENCY AMPLIFIER The 32 is a screen-grid tube rec­ ommended primarily for use as a radio-frequency amplifier in batteryoperated r a d i o r e c e i v e r s where economy of filament-current drain is important.

Contextual Info: W hat HEWLETT« mLMÆ PACKARD Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42070 Features • High Output Power: 21.0 dBm Typical Pj dB at 2.0 GHz 20.5 dBm Typical Pi ¿b at 4.0 GHz • High Gain at 1 dB Compression: 15.0 dB Typical Gi ^ at 2.0 GHz

transistor atf

Contextual Info: What H E W L E T T * mLliM PACKARD 2 -1 8 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13100 Features • Low N oise Figure: 1.1 dB Typical at 12 GHz • High A ssociated Gain: 9.5 dB Typical at 12 GHz • High Output Power: 17.5 dBm Typical Pj ¿b at 12 GHz

Contextual Info: WhatHEWLETT mL'EM P A C K A R D 2 - 1 0 GHz Medium Pow er Gallium Arsenide FE T Technical Data ATF-46101 Features • High Output Power: 27.0 dBm Typical Pj dB at 4 GHz • High Gain a t 1 dB Compression: 12.0 dB Typical Gj ^ at 4 GHz • High Power Efficiency:

Contextual Info: Thai H E W L E T T mLKM P A C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0520 Features • C ascadable 5 0 Q Gain B lock • High O utput Power: +23 dBm Typical Pj dB at 1.0 GHz • Low D istortion : 33 dBm Typical IP3 at 1.0 GHz

F2683

Contextual Info: That HEWLETT mi/LMPACKARD 2-16 GHz General Purpose Gallium Arsenide FET Technical Data A TF-26836 F e a tu r e s D escrip tio n • High Output Power: 18.0 dBm Typical Pj dB at 12 GHz The ATF-26836 is a high perfor­ mance gallium arsenide Schottkybarrier-gate field effect transistor

krc 118 048

Abstract: ZM02
Contextual Info: ADVANCE 2. 4 WIEG X 64 SDRAM DIMMs l^ iid R o r s i SYNCHRONOUS DRAM MODULE MT8LSD T 264A MT16LSD(T)464A FEATURES OPTIONS (DE-9) 2 Meg x 64 TSO P (shown), (DE-10) 4 Meg x 64 TSOP, (DE-25) 2 Meg x 64 SOJ, (DE-26) 4 Meg x 64 SOJ Sm Tm Q pj MARKING • Components

8 pin IC 34063

Abstract: 34063 34063 schematic MARKING A2a SOT363
Contextual Info: What H E W LET T 1 "KM PA C K A R D 3.0 GHz Medium Power Silicon RFIC Amplifier Technical Data INA-34063 Features Surface Mount SOT-363 SC-70 Package Applications Pin Connections and Package Marking • +8 dBm Pj dB at 1.9 GHz • 21 dB Gain at 1.9 GHz • High Isolation 32 dB at

Contextual Info: VISH A Y SIM0204 INDUCTOR , HIGH Q MINI MEL DRALORiC' Features Sii s u f a s o r i CE>pjä r FHïTî •<:o sa i;» C 'o d e C e d r a ie C o te X;».V • Stable metal film on high quality ceramic • High Q values on higher frequencies • Compatible with vapor phase and infrared reflow soldering

cvk 1060

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS PJ • A p p ro v e d b y R e lia b ility C e n te r fo r E le c tro n ic C o m p o n e n t, J a p a n -C e r titic a tio n N o . R C J -0 3 -2 3 C Low Im pedance, For Switching Pow er Supplies s e rie s Low Imperlance '.e g Life