PJ 62 Search Results
PJ 62 Price and Stock
ROHM Semiconductor ESR01MZPJ622RES 6.2K OHM 5% 1/5W 0402 |
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ESR01MZPJ622 | Tape & Reel | 10,000 | 10,000 |
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ESR01MZPJ622 | 10,000 |
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ROHM Semiconductor SFR01MZPJ625SULFUR TOLERANT CHIP RESISTORS: |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SFR01MZPJ625 | Tape & Reel | 10,000 | 10,000 |
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ROHM Semiconductor LTR18EZPJ621RES 620 OHM 5% 1.5W 1206 WIDE |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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LTR18EZPJ621 | Cut Tape | 9,920 | 1 |
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| LTR18EZPJ621 | Digi-Reel | 9,920 | 1 |
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| LTR18EZPJ621 | Tape & Reel | 9,920 | 5,000 |
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LTR18EZPJ621 | 30,000 | 1 |
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LTR18EZPJ621 | 5,000 |
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ROHM Semiconductor ESR10EZPJ625RES 6.2M OHM 5% 2/5W 0805 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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ESR10EZPJ625 | Cut Tape | 9,864 | 1 |
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| ESR10EZPJ625 | Tape & Reel | 9,864 | 5,000 |
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ROHM Semiconductor ESR03EZPJ623RES 62K OHM 5% 1/4W 0603 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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ESR03EZPJ623 | Tape & Reel | 5,678 | 5,000 |
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| ESR03EZPJ623 | Cut Tape | 678 | 1 |
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PJ 62 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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pj54
Abstract: MIL-P-642 M1487 P1069 M1488 TT250 OF 444 JJ-026 p1070 M641/4-1
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MIL-J-641 JJ-026. PJ-054 PJ-540. Screw23 M1015 M641/4-1 P1616 P1070 M1487) pj54 MIL-P-642 M1487 P1069 M1488 TT250 OF 444 JJ-026 p1070 M641/4-1 | |
Q855Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 RELEASED POR PUBLICATION BY TYCO ELECTRONICS CORPORATION. - - ALL RIGHTS RESERVED. D DIM A C P2 MOD MOD PLUG WHT/GRN PLUG GRN/WHT WHT/ORN BLU/WHT WHT/BLU B ORN/WHT WHT/BRN BRN/WHT PJ LP PJ LP W IR IN G D IAG RAM |
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31MAR2 150CT2001 \ENGapps\TECworker\jobs\nsrvQ38a\1 Q855\21 Q855 | |
CODE PJ 62-00
Abstract: PJ 929 521-9245
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31MAR2 CT2001 CODE PJ 62-00 PJ 929 521-9245 | |
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Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS PS Miniature Sized, Low Impedance, For Switching Power Supplies series Through 100V only Wide temperature range type, miniature sized. Compliant to the RoHS directive (2002/95/EC). PJ Smaller PS TS Long Life Specifications |
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2002/95/EC) 120Hz, 8100Z-1 | |
PJ 62
Abstract: PJ 63 PJ 63 MM
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Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS VZ Wide Temperature Range series Through 100V only Small case sizes as same as VR series, but operating over wide temperature range of – 55 ~ +105˚C. PS VZ High Rippie Current High Reliability PJ Smaller High Temperature |
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120Hz, 8100Y | |
PHL20Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS VZ Wide Temperature Range series Through 100V only Small case sizes as same as VR series, but operating over wide temperature range of – 55 ~ +105˚C. PS VZ High Rippie Current High Reliability PJ Smaller High Temperature |
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120Hz, 120Hz 300Hz 8100T PHL20 | |
pj 929 diode
Abstract: 2SJ214 sawtooth wave generator through transformer buck-boost chopper 28 pin ic TM 1628 npn vdb 1S2076A pj 83 diode chopper transformer winding HA16666
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HA16114P/PJ/FP/FPJ, HA16120FP/FPJ REJ03F0055-0200Z ADE-204-020A) HA16114P/FP/FPJ HA16120FP/FPJ HA16120 HA16114 pj 929 diode 2SJ214 sawtooth wave generator through transformer buck-boost chopper 28 pin ic TM 1628 npn vdb 1S2076A pj 83 diode chopper transformer winding HA16666 | |
PJ 909Contextual Info: 6EP. 15 '9 9 WED 07:42 POMONA E L E C T R ON I CG 909 Pomona 629 3317 PACE. 0 Mode) 4280N WE-310 (PJ-051) To Bantam (Miniature Phone Plug) FEATURES; • Shielded cable to reduce noise • WE-310 and Bantam Plugs molded to the cable for optimum durability |
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4280N WE-310 PJ-051) WE-310 720pf 420pf 4280N-XX PJ 909 | |
1850 0062Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS PJ Low Impedance, For Switching Power Supplies series Low impedance and high reliability withstanding 5000 hours load life at +105˚C 3000 / 2000 hours for smaller case sizes as specified below . Capacitance ranges available based on the numerical values in E12 series under JIS. |
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2002/95/EC) 120Hz, 120Hz 8100Z 1850 0062 | |
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Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS PJ Low Impedance, For Switching Power Supplies series Low impedance and high reliability withstanding 5000 hours load life at +105˚C 3000 / 2000 hours for smaller case sizes as specified below . Capacitance ranges available based on the numerical values in E12 series under JIS. |
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2002/95/EC) 120Hz, Vol17 120Hz | |
2.6 uf 400vContextual Info: ALUMINUM ELECTROLYTIC CAPACITORS PJ Low Impedance, For Switching Power Supplies series Low impedance and high reliability withstanding 5000 hours load life at +105˚C 3000 / 2000 hours for smaller case sizes as specified below . Capacitance ranges available based on the numerical values in E12 series under JIS. |
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2002/95/EC) 120Hz, 8100Y 2.6 uf 400v | |
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Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS PJ Low Impedance, For Switching Power Supplies series Low impedance and high reliability withstanding 5000 hours load life at +105˚C 3000 / 2000 hours for smaller case sizes as specified below . Capacitance ranges available based on the numerical values in E12 series under JIS. |
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2002/95/EC) 120Hz, Vol17 120Hz 8100B | |
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Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS PJ Low Impedance, For Switching Power Supplies series Low impedance and high reliability withstanding 5000 hours load life at +105˚C 3000 / 2000 hours for smaller case sizes as specified below . Capacitance ranges available based on the numerical values in E12 series under JIS. |
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2002/95/EC) 120Hz, 120Hz | |
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B52 transistorContextual Info: Thal mLUM HEWLETT PACKARD Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42000 Features This device is designed for use in low noise, wideband amplifier, • High Output Power: mixer and oscillator applications 21.0 dBm Typical Pj iB at 2.0 GHz |
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AT-42000 AT-42000 44475AM 0017b54 B52 transistor | |
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Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS PJ Low Impedance, For Switching Power Supplies series Low impedance and high reliability withstanding 5000 hours load life at +105˚C 3000 / 2000 hours for smaller case sizes as specified below . Capacitance ranges available based on the numerical values in E12 series under JIS. |
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2002/95/EC) 120Hz, 120Hz 8100B | |
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Contextual Info: CF003 Series GaAs Pseudomorphic HEMT and MESFET Chips □ Low Noise Figure: 1.0 dB at 12 GHz □ High Gain: 10 dB at 12 GHz □ Pj{jg Power: +22 dBm at 12 GHz □ Wide Dynamic Range □ Active Layers Include: Pseudomorphic HEMT, Epitaxial and Ion Implanted |
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CF003 CF003-03 CF003 CF003-01 n745D3 | |
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Contextual Info: pj| RADIAI f [1^51 Title TECHNICAL DATA SHEET F 797 399 000 Fibre Optlo Componsnta ST PIGTAIL 62.5/125. NOTE: 'RS' Stock N°:358-642B Dimensions Series Issue : Page Patchcord Dec. 01 99 1/1 : mm X <0 £ 57 max 03 ai 2000 o150 -e- GENERAL TYPE: - IEC 1754-2, BFOC/2.5 type - "ST2'. Bayonnet latching system |
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358-642B F709722000, | |
pj 59
Abstract: BNC-PJ-55U BNC-PJ-59U COAXIAL CABLE 5D-2V UG-291 oe21 COAXIAL CABLE 3D-2V RG-55 BNC-J BNC-J-55U
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UG-89/U RG-55/U, RG-58/U UG-261/U RG-59/U, RG-62/U BNC-J-55U BNC-J-59U pj 59 BNC-PJ-55U BNC-PJ-59U COAXIAL CABLE 5D-2V UG-291 oe21 COAXIAL CABLE 3D-2V RG-55 BNC-J | |
AN-A006Contextual Info: W hot HEWLETT mLEM PA C K A R D 3.0 GHz Wideband Silicon RFIC Amplifier Technical Data INA-32063 Features • 17 dB Gain at 1.9 GHz Surface Mount SOT-363 SC-70 Package • +3 dBm Pj jb at 1.9 GHz • Single +3V Supply • Unconditionally Stable Applications |
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INA-32063 OT-363 SC-70) INA-32063 OT-363 OT-143 5967-5769E AN-A006 | |
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Contextual Info: What HEWLETT 1"KM PACK ARD 3.0 GHz Wideband Silicon RFIC Amplifier Technical Data INA-32063 Features • 17 dB Gain at 1.9 GHz Surface Mount SOT-363 SC-70 Package • +3 dBm Pj dB at 1.9 GHz • Single +3V Supply • Unconditionally Stable Applications • LO Buffer and Driver |
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INA-32063 OT-363 SC-70) INA-32063 5967-5769E | |
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Contextual Info: W hat HEWLETT« mLMÆ PACKARD Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42070 Features • High Output Power: 21.0 dBm Typical Pj dB at 2.0 GHz 20.5 dBm Typical Pi ¿b at 4.0 GHz • High Gain at 1 dB Compression: 15.0 dB Typical Gi ^ at 2.0 GHz |
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AT-42070 AT-42070 Rft/50 0D17bb3 DG17bb4 | |
transistor atfContextual Info: What H E W L E T T * mLliM PACKARD 2 -1 8 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13100 Features • Low N oise Figure: 1.1 dB Typical at 12 GHz • High A ssociated Gain: 9.5 dB Typical at 12 GHz • High Output Power: 17.5 dBm Typical Pj ¿b at 12 GHz |
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ATF-13100 Outli13 ATF-13100 transistor atf | |
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Contextual Info: WhatHEWLETT mL'EM P A C K A R D 2 - 1 0 GHz Medium Pow er Gallium Arsenide FE T Technical Data ATF-46101 Features • High Output Power: 27.0 dBm Typical Pj dB at 4 GHz • High Gain a t 1 dB Compression: 12.0 dB Typical Gj ^ at 4 GHz • High Power Efficiency: |
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ATF-46101 ATF-46101 | |