PJ 25 Search Results

2SC2640

Abstract: pj 71
Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2640 Unit in mm VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : Output Power : Po=28W Min, ( f=175MHz, VCC=12.5V, Pi=4W ) 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ VCC=14.5V, Pj=4W, f=175MHz

SLAU320

Abstract: SLAU367 MSP430FR5949 MSP430FR5969IRGZ MSP430FR5869 SLAS704 MSP430FR5847IRHA MSP430FR5969 MSP430FR5949IRHA 09C0H
Contextual Info: ECCN 5E002 TSPA - Technology / Software Publicly Available MSP430FR59xx MSP430FR58xx www.ti.com SLAS704 – OCTOBER 2012 MIXED SIGNAL MICROCONTROLLER FEATURES • • Embedded Microcontroller – 16-Bit RISC Architecture up to 16‑‑MHz Clock – Wide Supply Voltage Range 1.8 V to 3.6 V

ic 748

Abstract: 2SC4688
Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SC4688 Unit in ram Weight: ELECTRICAL CHARACTERISTICS CHARACTERISTIC Ta=25°C SYMBOL Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage

F585

Contextual Info: February 6, 1997 TIM5964-16L-151 1•RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Pow er at 1dB SYMBOL CONDITION P id B Ta= 25 °C MIN. TYP. MAX. UNIT 41.5 42.5 6.0 7.0 — dBm Com pression Point Pow er G ain at 1dB G id B Com pression Point V d s = 10V

PJ 969 diode

Abstract: MP4012 PJ 969
Contextual Info: MP4012 SILICON NPN EPITAXIAL TYPE_ DARLINGTON POWER TRANSISTOR 4 IN 1 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS _Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE 25.2±0-2 LOAD SWITCHING. . Small Package by Full Molding.

Contextual Info: 3SK226 SILICON N CH ANNEL DUAL GATE M O S T Y P E FIELD EF F E C T T R A N SIST O R TV TUNER, VHF RF AM PLIFIER APPLICATIONS. FM TUNER APPLICATIONS. U nit in mm +Q2 2.9 - 0.3 • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance : Crss = 0.015pF Typ.

MAX9263

Abstract: MAX9264 prng IEC ACB symbols PJ 62 SPREAD-SPECTRUM SYSTEM
Contextual Info: 19-5644; Rev 1; 3/11 TION KIT EVALUA BLE IL AVA A HDCP Gigabit Multimedia Serial Link Serializer/Deserializer The MAX9263/MAX9264 chipset extends Maxim’s gigabit multimedia serial link GMSL technology to include highbandwidth digital content protection (HDCP) encryption

TA8622N

Contextual Info: TOSHIBA TA8622N TENTATIVE T V S O U N D M P X D E M O D U L A T O R F O R U.S.A . S Y S T E M . Internal filters for SUB and SAP . SUB/SAP display . Space Wide . Volume, balance, bass, treble control M A X IM U M R A T IN G S T a = 2 5 ° C ITEM SYMBOL

h1775

Contextual Info: GaAs IRED & PHOTO-TRANSISTOR 4N38.38A Unit in mm AC LINE/DIGITAL LOGIC ISOLATOR. DIGITAL LOGIC/DIGITAL LOGIC ISOLATOR. TELEPHONE LINE RECEIVER. TWISTED PAIR LINE RECEIVER. HIGH FREQUENCY POWER SUPPLY FEEDBACK CONTROL. RELAY CONTACT MONITOR. The TOSHIBA 4N38 and 4N38A consist of a gallium

Transistor PJ 431

Abstract: T0-204MA PLA relay 2 c/o -MCC-12D-5A-WB PTC430 transistor w 431 h a 431 transistor PLA relay 1 c/o -MCC-12D-5A-WB
Contextual Info: 6115950 MICROSEMI CORP/POWER 71C 71 00322 p r - J J . r ? DE I h l l S T S O 0000325 1 | Series PTC 430, PTC 401 HighVoltoge NPN Transistors 7 Amperes • 400 Volts FEATURES • High Voltage Rating —400 Volts • Industrial and Military Applications • Superior Resistance to Thermal Fatigue

M16GZ47

Abstract: m16jz47 M16GZ47A SM16J 2428M SM16Z47A SM16JZ47A 16GZ47 16JZ47
Contextual Info: TOSHIBA SM16 GJ Z47 SM16(GJ)Z47A Triac U n it in m m Silicon Planar Type A C Power Control Applications F e a tu re s • Repetitive Peak Off-State Voltage - VDRM = 400, 600V • R.M.S, O n-State Current ‘ ^T(RMS) = 1 6 A • High Com m utating (dv/dt) • Isolation Voltage

74AS08

Abstract: SN74A808
Contextual Info: SN74ALS08, SN74AS08, SN54ALS08, SN54AS08 QUADRUPLE 2-INPUT POSITIVE-AND GATES _ • • Packaga Options Include Plastic "Small Outline" Packages. Ceramic Chip Carriers, and Standard Plastic and Ceramic 300-mil DIPs D2661, APRIL 1982 - REVISED MAY 19B6

Contextual Info: TOSHIBA 2SK1382 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7r-MOSIII 2 S K 1 382 HIGH SPEED SWITCHING APPLICATIONS RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATIONS • • • • • INDUSTRIAL APPLICATIONS Unit in mm 4V Gate Drive

Z1506

Abstract: Toshiba MG200Q2YS40
Contextual Info: T O SH IB A MG200Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q2YS40 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf = 0.5,ms Max. trr = 0.5^s (Max.) Low Saturation Voltage

HC-734

Abstract: HC735
Contextual Info: - TC74HC4075AP/AF T R I P L E 3 - I N P U T OR GATE T h e T C 7 4 H C 4 0 7 5 A is a h ig h s p e e d C M O S 3 - I N P U T O R G A T E f a b r i c a te d w ith s ilic o n g a t e C^M O S t e c h n o lo g y . I t a c h ie v e s t h e h ig h s p e e d o p e r a t io n s i m i l a r to

Contextual Info: SN74LVC16244A 16-BIT BUFFER/DRIVER WITH 3-STATE OUTPUTS 3CES081A - DECEMBER 1 9 95 - REVISED JANUARY 1998 DQQ OR DL PACKAOE TOP VIEW Member of the Texas Instruments Wldebus Family EP/C™ (Enhanced-Performance Implanted CMOS) Submicron Process Typical V q l p (Output Ground Bounce)

Contextual Info: 54ACT11874, 74ACT11874 DUAL 4-BIT D-TYPE EDGE-TRIGGERED FLIP-FLOPS WITH 3-STATE OUTPUTS D3447, MAR CH 1990-R E V IS E D O C TO BER 1990 54A C T 11 8 74 . . . J T P A C K A G E Inputs are TTL-Voltage C om patible 74A C T 11 8 74 . . . D W O R N T P A C K A G E

HCT574A

Contextual Info: MC74HCT574A Octal 3-State Noninverting D Flip-Flop with LSTTL-Compatible Inputs High−Performance Silicon−Gate CMOS The MC74HCT574A is identical in pinout to the LS574. This device may be used as a level converter for interfacing TTL or NMOS outputs to High Speed CMOS inputs.

Contextual Info: TYPES SN54ALS677, SN54ALS678. SN74ALS677, SN74ALS678 ADDRESS COMPARATORS D 2 6 6 1 , J U N E 1 9 8 2 — R E V IS E D D E C E M B E R 1 9 8 3 S N 54A LS 677 . . . JT PACKAGE SN 74A LS 677 . . . .NT PACKAGE TOP VIEW • A L S 6 7 7 is a 16 -b it to 4-B it Comparator w ith Enable

tc5117400f

Abstract: TC5117400J
Contextual Info: TOSHIBA TC5117400J/Z/FT-60/70 4,194,304 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The TC5117400J/Z/FT-60/70 is the new generation dynamic RAM organized 4,194,304 word by 4 bit. The TC5117400J/Z/FT-60/70 utilizes Toshiba’s CMOS silicon gate process technology as well as advanced

Contextual Info: MC74HC573A Octal 3-State Noninverting Transparent Latch High−Performance Silicon−Gate CMOS The MC74HC573A is identical in pinout to the LS573. The devices are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs.

Contextual Info: SMJ44C250 262 144 BY 4-BIT MULTIPORT VIDEO RAM SGMS037 — JANUARY 1991 * Military Operating Temperature Range JD Package* Top View . . , - 5 5 ° C t o 125°C DRAM: 262 144 Words SAM: 512 Words * * * x x 4 Bits 4 Bits 28 : 27 : 3 26 : SDQ2 TRG c 4 25 :

R31-R32-R40

Contextual Info: TO SHIBA TMP47C635 CMOS 4-BIT MICROCONTROLLER TMP47C635N The 47C635 is based on the TLCS-470 CMOS series. The 47C635 has on-screen display circuit OSD to display characters and marks which indicate channel or time on TV screen, A/D converter (comparator) input, D/A

MPU85-347

Contextual Info: TOSHIBA CUC/UP . WE C • iai7 2 4 1 _ 0 Q ia0 D 1 7 ■ 1 ~ - 5 Z 'J 3 '0 3 TOSHIBA TMP82C255A/TMP82C265A CMOS PROGRAMMABLE PERIPHERAL INTERFACE TMP82C255AN-2 / TMP82C265AF-2 TMP82C255AN-10 / TMP82C265AF-10