PINOUT EQUIVALENT Search Results

948F

Abstract: DL129 LS85 MC74HC85 MC74HCXXN MM74C85
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC74HC85 4-Bit Magnitude Comparator High–Performance Silicon–Gate CMOS The MC74HC85 is identical in pinout and function to the LS85. This device is similar in function to the MM74C85 and L85, but has a different pinout. The

GVT7364A16

Contextual Info: GALVANTECH, INC. ASYNCHRONOUS SRAM GVT7364A16 REVOLUTIONARY PINOUT 64K X 16 64K x 16 SRAM +3.3V SUPPLY, SINGLE CHIP ENABLE REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTIO N • • • • • • • • • • The GVT7364A16 is organized as a 65,536 x 16 SRAM

GVT72128A8

Abstract: GALVANTECH
Contextual Info: GALVANTECH, INC. ASYNCHRONOUS SRAM GVT72128A8 REVOLUTIONARY PINOUT 128K X 8 128K x 8 SRAM WITH SINGLE CHIP ENABLE REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTION • • • • • • • • • • • The GVT72128A8 is organized as a 131,072 x 8 SRAM

MC54/74HC86A

Abstract: DL129 LS86 MC54HCXXAJ MC74HCXXAD MC74HCXXAN MM74C86
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad 2-Input Exclusive OR Gate MC54/74HC86A High–Performance Silicon–Gate CMOS The MC54/74HC86A is identical in pinout to the LS86; this device is similar in function to the MM74C86 and L86, but has a different pinout. The

GVT73128A8

Abstract: 73128A8
Contextual Info: GALVANTECH, INC. ASYNCHRONOUS SRAM GVT73128A8 REVOLUTIONARY PINOUT 128K X 8 128K x 8 SRAM +3.3V SUPPLY, SINGLE CHIP ENABLE REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTIO N • • • • • • • • • • • The GVT73128A8 is organized as a 131,072 x 8 SRAM

ci 741

Abstract: GALVANTECH UA 741 datasheet GVT72256A16 72256A16
Contextual Info: GALVANTECH, INC. ASYNCHRONOUS SRAM GVT72256A16 REVOLUTIONARY PINOUT 256K X 16 256K x 16 SRAM +5V SUPPLY REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTIO N • • • • • • • • • • The GVT72256A16 is organized as a 262,144 x 16 SRAM using a four-transistor memory cell with a high

LS161

Abstract: MC1406 LC1092AP LC1092BP L32N 32-bit shift register
Contextual Info: Advance at t = DATA SHEET LC1092AP/BP AC PLASMA DISPLAY COLUMN DRIVERS DESCRIPTIO N J-leaded hi9 ' 'la9= CM°S HV-CMOS Integrated circuits mat are assembled In 44-pln plastic 3 for details? LC1092BP pinout alignment is the mirror image of the LC1092AP pinout alignment (see Figures 2 and

PF351

Abstract: GVT73256A16
Contextual Info: GALVANTECH, INC. ASYNCHRONOUS SRAM GVT73256A16 REVOLUTIONARY PINOUT 256K X 16 256K x 16 SRAM +3.3V SUPPLY REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTIO N • • • • • • • • • • The GVT73256A16 is organized as a 262,144 x 16 SRAM using a four-transistor memory cell with a high

GVT72512A8

Contextual Info: GALVANTECH, INC. ASYNCHRONOUS SRAM GVT72512A8 REVOLUTIONARY PINOUT 512K X 8 512K x 8 SRAM +5V SUPPLY REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTIO N • • • • • • • • • • • The GVT72512A8 is organized as a 524,288 x 8 SRAM using a four-transistor memory cell with a high performance,

GALVANTECH

Abstract: GVT72024A8
Contextual Info: GALVANTECH, INC. GVT72024A8 TRADITIONAL PINOUT 128K X 8 SRAM ASYNCHRONOUS SRAM 128K x 8 SRAM WITH TWO CHIP ENABLE TRADITIONAL PINOUT FEATURES GENERAL DESCRIPTIO N • • • • • • • • The GVT72024A8 is organized as a 131,072 x 8 SRAM using a four-transistor memory cell with a high performance,

GVT73512A8

Contextual Info: GALVANTECH, INC. ASYNCHRONOUS SRAM GVT73512A8 REVOLUTIONARY PINOUT 512K X 8 512K x 8 SRAM +3.3V SUPPLY REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTIO N • • • • • • • • • • • The GVT73512A8 is organized as a 524,288 x 8 SRAM using a four-transistor memory cell with a high performance,

ic 14069

Contextual Info: AT&T Advance DATA SHEET LC1092CP/DP AC PLASMA DISPLAY ROW DRIVERS DESCRIPTION The LC1092CP and LC1092DP are high-voltage CMOS HV-CMOS integrated circuits that are assembled in 44-pin plastic J-leaded chip carriers. The LC1092DP pinout alignment is the mirror image of the LC1092CP pinout alignment (see Figures 2 and

Galvantech

Abstract: GVT72028A4 GVT72028A4J-10L 28-pin SOJ
Contextual Info: GALVANTECH, INC. ASYNCHRONOUS SRAM GVT72028A4 TRADITIONAL PINOUT 256K X 4 256K x 4 SRAM WITH SINGLE CHIP ENABLE TRADITIONAL PINOUT FEATURES GENERAL DESCRIPTIO N • • • • • • • • • The GVT72028A4 is organized as a 262,144 x 4 SRAM using a four-transistor memory cell with a high performance,

UA 741 datasheet

Abstract: ci 741 GVT7264A16 7264A16
Contextual Info: GALVANTECH, INC. ASYNCHRONOUS SRAM GVT7264A16 REVOLUTIONARY PINOUT 64K X 16 64K x 16 SRAM WITH SINGLE CHIP ENABLE REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTIO N • • • • • • • • • • The GVT7264A16 is organized as a 65,536 x 16 SRAM using a four-transistor memory cell with a high performance,

Contextual Info: PRELIMINARY U lin P n M ^ MT5LC128K8D4 RE VOL UT IONA RY PINOUT 128K x 8 SRAM 128K x 8 SRAM SRAM 3.3V OPERATION WITH SINGLE CHIP ENABLE, REVOLUTIONARY PINOUT • All I / O pins are 5V tolerant • H ighspeed : 15, 2 0 and 25ns • M ultiple center power and ground pins for greater

A1733A

Contextual Info: ADVANCE M • in n r iM m t s l c i m 4D4 REVOLUTIONARY PINOUT 1 MEG x 4 SRAM y SRAM 1 MEG x 4 SRAM 3.3V OPERATION WITH OUTPUT ENABLE, REVOLUTIONARY PINOUT • All I/O pins are 5V tolerant • High speed: 12,15, 20, 25 and 35ns • High-performance, low-power, CM OS double-metal

w503

Contextual Info: SAW Filters SAW Bandpass Filter – WCDMA – Rx IF Specification Rev 8 Features .P01 Package Drawing & Pinout .P01 Technical Characteristics .P02

Contextual Info: ADVANCE M I I C R O N MT5LC512K8D4 R E V O L U T IO N A R Y PINOUT 512K x 8 SRAM SRAM 512Kx 8 SRAM 3.3V OPERATION WITH OUTPUT ENABLE, REVOLUTIONARY PINOUT PIN ASSIGNMENT Top View • All I / O pins are 5V tolerant • H igh speed: 1 2 ,1 5 , 20, 25 an d 35ns

Contextual Info: PRELIMINARY I V I I r— D I —i K l I MT5LC128K8D4 R E V O L U T IO N A R Y PINOUT 128K x 8 SRA M SRAM 128K x 8 SRAM REVOLUTIONARY PINOUT, 3.3V OPERATION WITH SINGLE CHIP ENABLE PIN ASSIGNMENT Top View • All I / O pins are 5V tolerant • High speed: 12*, 15, 20 and 25ns

54FCT827B

Contextual Info: IDT54/74FCT827A/B HIGH-PERFORMANCECMOSBUFFER MILITARY AND COMMERCIAL TEMPERATURE RANGES IDT54/74FCT827A/B HIGH-PERFORMANCE CMOS BUFFER FEATURES: DESCRIPTION: • Faster than AMD's Am29827 series • Equivalent to AMD's Am29827bipolar buffers in pinout/function,

TMX-W503

Contextual Info: SAW Filters TMX W503 SAW Bandpass Filter – WCDMA – Rx IF Specification Rev 4 Package Drawing & Pinout .P01 Technical Characteristics .P02

IDT54FCT

Contextual Info: IDT54/74FCT827A/B HIGH-PERFORMANCECMOSBUFFER MILITARY AND COMMERCIAL TEMPERATURE RANGES IDT54/74FCT827A/B HIGH-PERFORMANCE CMOS BUFFER FEATURES: DESCRIPTION: • Faster than AMD's Am29827 series • Equivalent to AMD's Am29827bipolar buffers in pinout/function,

Contextual Info: IDT29FCT520A IDT29FCT520B IDT29FCT520C MULTILEVEL PIPELINE REGISTER Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • Equivalent to AMD’s Am29520 bipolar Multilevel Pipeline Register in pinout/function, speed and output drive over full temperature and voltage supply extremes

300DF

Abstract: 833A
Contextual Info: FAST CMOS PARITY BUS TRANSCEIVER FEATURES: - Equivalent to AMD’s Am29833 bipolar parity bus transceiver in pinout/function, speed and output drive overfull temperature and voltage supply extremes - High-speed bidirectional bus transceiver for processor-organized