PIN PHOTODIODE CHIP Search Results
PIN PHOTODIODE CHIP Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| PEF24628EV1X |
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PEF24628 - SOCRATES Four-channel SHDSL EFM system-on-chip | |||
| GCM32ED70J476KE02L | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors for Automotive | |||
| GRM022R61C104ME05L | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors for General Purpose | |||
| GRM033D70J224ME01D | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors for General Purpose | |||
| GRM155R61H334KE01J | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors for General Purpose |
PIN PHOTODIODE CHIP Datasheets Context Search
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Contextual Info: TEMD5010 Vishay Semiconductors Silicon PIN Photodiode Description TEMD5010 is a high speed and high sensitive PIN photodiode. It is a miniature Surface Mount Device SMD including the chip with a 7.5 mm2 sensitive area, detecting visible and near infrared radiation. |
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TEMD5010 TEMD5010 J-STD-20) 2000/53/EC, 2002/95/EC 2002/96/EC 08-Apr-05 | |
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Contextual Info: TEMD5010 Vishay Semiconductors Silicon PIN Photodiode Description TEMD5010 is a high speed and high sensitive PIN photodiode. It is a miniature Surface Mount Device SMD including the chip with a 7.5 mm2 sensitive area, detecting visible and near infrared radiation. |
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TEMD5010 TEMD5010 J-STD-20) 2000/53/EC, 2002/95/EC 2002/96/EC 08-Apr-05 | |
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Contextual Info: TEMD5110 Vishay Semiconductors Silicon PIN Photodiode Description TEMD5110 is a high speed and high sensitive PIN photodiode. It is a miniature Surface Mount Device SMD including the chip with a 7.5 mm2 sensitive area and an infrared bandpass filter matched to IR |
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TEMD5110 TEMD5110 2000/53/EC, 2002/95/EC 2002/96/EC 08-Apr-05 | |
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Contextual Info: bOE D T - 4 f-£>0 0235bG5 004b54H Sb3 « S I E G SFH 2210 SIEMENS TERNARY PIN PHOTODIODE T 01 8 P A C K A G E SIEMENS AKTIENGESELLSCHAF Preliminary Data Sheet Package Dimensions in mm Chip Location -*H] FEATURES Maximum Ratings • InGaAs/lnP PIN Photodiode |
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0235bG5 004b54H | |
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Contextual Info: BPV20F Vishay Semiconductors Silicon PIN Photodiode Description BPV20F is a high speed and high sensitive PIN photodiode in a plastic package with a cylindrical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters λ p = 950 nm . |
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BPV20F BPV20F 08-Apr-05 | |
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Contextual Info: BPW24R Vishay Semiconductors Silicon PIN Photodiode Description BPW24R is a high sensitive silicon planar photodiode in a standard TO-18 hermetically sealed metal case with a glass lens. A precise alignment of the chip gives a good coincidence of mechanical and optical axes. The device |
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BPW24R BPW24R 08-Apr-05 | |
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Contextual Info: HFD3002 Silicon PIN Photodiode FEATURES • Electrically isolated from TO-46 case • Low capacitance • High speed: tr = 30 ns max. at Vr = 5 V; 10 ns max. a tV R= 1 5 V • High responsivity FIBER003.TIF DESCRIPTION The HFD3002 PIN photodiode is designed for high speed |
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HFD3002 FIBER003 HFD3002 HFD3002S F1BER033 FIBER034 FIBER101 RBER037 | |
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Contextual Info: BPV21F L Vishay Semiconductors Silicon PIN Photodiode Description BPV21F(L) is a high speed and high sensitive PIN photodiode in a plasic package with a cylindrical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters (λ p = 950 nm). |
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BPV21F 08-Apr-05 | |
Photodiode-Array
Abstract: Photodiode Array linear Rotary Encoder Switch short OL2100 OL2100-DF OPR2100 photodiode encoder 5mm ir photodiode IR photodiode array photodiode array encoder
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OL2100, OL2100-DF OL2100-DF) OL2100) KOM2100 OPR2100 OL2100 30sec. 950nm Photodiode-Array Photodiode Array linear Rotary Encoder Switch short OL2100 OL2100-DF OPR2100 photodiode encoder 5mm ir photodiode IR photodiode array photodiode array encoder | |
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Contextual Info: InnovativeInnov Innovative VCSEL Solutions . Delivered Advanced Optical Components 2.5Gbps 850nm PIN + Preamp LC ROSA Package Preliminary HFD3180-103 Key Features: LC ROSA High performance GaAs PIN photodiode with separate transimpedance amplifier Low electrical parasitic TO46 package |
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850nm HFD3180-103 155Mbps HFD3180-103 850nm. 1-866-MY-VCSEL 1-866-MY-VCSEL | |
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Contextual Info: DATA SHEET d FEATURES: LC ROSA PIN-1310-10LR-LC includes flex circuit SC ROSA PIN-1310-10LR-SC includes flex circuit High performance InGaAs PIN photodiode with separate transimpedance amplifier Low electrical parasitic TO46 package |
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PIN-1310-10LR-LC PIN-1310-10LR-SC 10G-BASE-LR 1310NM PIN-1310-10LR-XX PIN-1310-10LR-XX 1310nm. 1-866-MY-VCSEL | |
Q62702P0956
Abstract: sfh203fa SFH203 RoHS SFH203
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400nm 1100nm SFH203) 750nm SFH203FA) 203FA) Q62702P0955 Q62702P0956 sfh203fa SFH203 RoHS SFH203 | |
SFH213
Abstract: SFH213 FA
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400nm 1100nm 750nm Q62702P0930 Q62702P1671 720-SFH213 SFH213 SFH213 FA | |
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Contextual Info: T1120P Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 2.37 x 2.37 x 0.28 • Radiant sensitive area (in mm2): 4.4 • High photo sensitivity • High radiant sensitivity |
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T1120P T1120P 2002/95/EC 2002/96/EC 11-Mar-11 | |
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Contextual Info: BPW24R www.vishay.com Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : Ø 4.7 • Radiant sensitive area (in mm2): 0.78 • High photo sensitivity • High radiant sensitivity |
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BPW24R BPW24R 11-Mar-11 | |
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Contextual Info: T330P www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.67 x 0.67 x 0.28 • Wafer diameter (in mm): 100 • Radiant sensitive area (in mm2): 0.23 • Peak sensitivity wavelength: 900 nm |
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T330P 2002/95/EC 2002/96/EC T330P 11-Mar-11 | |
thermistor 054Contextual Info: TOSHIBA -CLASER/FBR O P T I O DIE D • ^0^7552 001^105 3 « T O S b . T-4Ì-5Q TOSHIBA PIN PHOTODIODE TOPD320 Features • • • • • • • InGaAs PIN Structure Mesa Type i4.6mm Window Package Wavelength 0.8~1.6//m High Speed 0.5ns Max Low Dark Current 10nA Max |
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OPD320 1550n 1000o 50/125pm) thermistor 054 | |
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Contextual Info: TEMD7100X01 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: surface mount • Package form: 0805 • Dimensions L x W x H in mm : 2 x 1.25 x 0.85 • Radiant sensitive area (in mm2): 0.23 • High radiant sensitivity |
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TEMD7100X01 J-STD-020 AEC-Q101 TEMD7100X01 11-Mar-11 | |
VBP10Contextual Info: VBP104S, VBP104SR www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: surface mount • Package form: GW, RGW VBP104S • Dimensions L x W x H in mm : 6.4 x 3.9 x 1.2 • Radiant sensitive area (in mm2): 4.4 • High photo sensitivity |
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VBP104S, VBP104SR VBP104S J-STD-020 2002/95/EC 2002/96/EC VBP104S VBP104SR 2011/65/EU VBP10 | |
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Contextual Info: VBP104FAS, VBP104FASR www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: surface mount • Package form: GW, RGW • Dimensions L x W x H in mm : 6.4 x 3.9 x 1.2 • Radiant sensitive area (in mm2): 4.4 VBP104FAS • High radiant sensitivity |
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VBP104FAS, VBP104FASR VBP104FAS J-STD-020 2002/95/EC 2002/96/EC VBP104FAS VBP104FASR 11-Mar-11 | |
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Contextual Info: TEMD5010X01 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: surface mount • Package form: top view • Dimensions L x W x H in mm : 5 x 4.24 x 1.12 • Radiant sensitive area (in mm2): 7.5 • AEC-Q101 qualified • High photo sensitivity |
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TEMD5010X01 AEC-Q101 J-STD-020 2002/95/EC 2002/96/EC TEMD5010X01 2011/65/EU 2002/95/EC. 2011/65/EU. | |
siemens 207aContextual Info: bGE D ûE3SbOS Q04b7D3 bö5 « S I E G SIEMENS 'S 3 SFH 207A SILICON PIN PHOTODIODE SIEMENS AKTIENGESELLSCHAF Package Dimensions in Inches mm .904 (23.0) .079 (2.0) .055(1.4) .865 (22.0) .110(2.8) .086 (2.2) .307 (7.8) '.291 (7.4) .035 (,9)_ .028 (.7) .609(15.5) |
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Q04b7D3 fl235bDS siemens 207a | |
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Contextual Info: Agilent HSDL-9100 Miniature Surface-Mount Proximity Sensor Data Sheet Features • Excellent optical isolation resulting in near zero optical cross-talk • High efficiency emitter and high sensitivity photodiode for high signal-to-noise ratio • Low cost & lead-free miniature |
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HSDL-9100 HSDL9100 5989-2301EN 5989-3179EN | |
MINDSPEED M02015Contextual Info: Revision Information This document contains information that is subject to change without notice. Contact Technical Publications for latest revision information. M02015 Low Power CMOS Transimpedance Amplifier with AGC for Fiber Optic Networks up to 2.5 Gbps |
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M02015 M02015 02015-DSH-001-D MINDSPEED M02015 | |