PIN PHOTODIODE 1550 NM Search Results

InGaAs Photodiode 1550nm

Contextual Info: 75 µm Analog InGaAs PIN Photodiode R-11-075A-G-B B -C Features • InGaAs/InP PIN Photodiode • High Responsivity @1310 nm and 1550 nm • Low dark current • Low intermodulation distortion • High responsivity • Hermetically sealed 3-pin metal case

NO81

Contextual Info: 40 µm Analog InGaAs PIN Photodiode R-11-040A-G-B B -C Features • InGaAs/InP PIN Photodiode • High Responsivity @1310 nm and 1550 nm • Low dark current • Low intermodulation distortion • High responsivity • Hermetically sealed 3-pin metal case

InGaas PIN photodiode, 1550

Abstract: InGaAs photodiode 1310 1550 PIN Photodiode 4 Ghz 1550 nm PHOTODIODE PD 20
Contextual Info: InGaAs PIN Photodiode Modules R-11-300-R/R-xxx Features • InGaAs/InP PIN Photodiode • High responsivity at 1310 nm and 1550 nm • Low dark current • Fast pulse response • -40 to 85ºC operating temperature • Hermetically sealed 3-pin metal case

InGaAs Photodiode 1550nm

Abstract: InGaas PIN photodiode Analog Photodiode, 1550nm, PIN Photodiode For CATV Receiver
Contextual Info: Analog InGaAs PIN Photodiode R-11-XXXA-G-A B Features • InGaAs/InP PIN Photodiode • High Responsivity @1310 nm and 1550 nm • Low dark current • Low intermodulation distortion • High responsivity • Hermetically sealed 3-pin metal case • Active diameter is 40, 55 and 75 µm

SRD00225G

Abstract: SRD00224G SRD00224H SRD00224O SRD00224Q SRD00225H SRD00225N SRD00225O STM-16 PIN photodiode 1310
Contextual Info: Fiber Optics Ternary PIN Photodiode SRD00224x SRD00225x Features • InGaAs/InP PIN photodiode • Designed for applications in fiber-optics communication systems • Sensitive receiver for 2nd and 3rd optical window 1300 nm and 1550 nm • Suitable for bit rates up to 2.5 Gbit/s

InGaAs Photodiode 1550nm

Contextual Info: Analog InGaAs PIN Photodiode R-11-XXXA-G-B B -C Features • InGaAs/InP PIN Photodiode • High Responsivity @1310 nm and 1550 nm • Low dark current • Low intermodulation distortion • High responsivity • Hermetically sealed 3-pin metal case • Active diameter is 40, 55 and 75 µm

Contextual Info: InGaAs 55µm PIN Photodiode Chip R-11-055-C Features • InGaAs/InP PIN Photodiode • High Responsivity @1310 nm and 1550 nm • Low dark current • Operate at -40 to 85ºC • Active diameter is 55µm Absolute Maximum Rating Tc=25ºC Parameter Symbol

Contextual Info: InGaAs 75µm PIN Photodiode Chip R-11-075-C Features • InGaAs/InP PIN Photodiode • High Responsivity @1310 nm and 1550 nm • Low dark current • Operate at -40 to 85ºC • Active diameter is 75µm Absolute Maximum Rating Tc=25ºC Parameter Symbol

PIN photodiode 1310

Contextual Info: InGaAs 55µm PIN Photodiode Chip R-11-055-C Features • InGaAs/InP PIN Photodiode • High Responsivity @1310 nm and 1550 nm • Low dark current • Operate at -40 to 85ºC • Active diameter is 55µm Absolute Maximum Rating Tc=25ºC Parameter Symbol

Contextual Info: InGaAs 75µm PIN Photodiode Chip R-11-075-C Features • InGaAs/InP PIN Photodiode • High Responsivity @1310 nm and 1550 nm • Low dark current • Operate at -40 to 85ºC • Active diameter is 75µm Absolute Maximum Rating Tc=25ºC Parameter Symbol

InGaas PIN photodiode chip

Contextual Info: InGaAs PIN Photodiode Chip R-11-300-C Features • InGaAs/InP PIN Photodiode • High Responsivity @1310 nm and 1550 nm • Low dark current • Operate at -40 to 85ºC • Active diameter is 280µm • Monitor PD application Absolute Maximum Rating Tc=25ºC

photodiode eyes response application

Abstract: 10G PIN photodiode R-11-020-C photodiode eyes response
Contextual Info: InGaAs 10G PIN Photodiode Chip R-11-020-C Features • InGaAs/InP PIN Photodiode • High Responsivity @1310 nm and 1550 nm • Low dark current • Fast response • Operate at -40 to 85ºC • Active diameter is 20µm • 10G Optical receiver application

InGaas PIN photodiode chip

Contextual Info: InGaAs PIN Photodiode Chip R-11-300-C Features • InGaAs/InP PIN Photodiode • High Responsivity @1310 nm and 1550 nm • Low dark current • Operate at -40 to 85ºC • Active diameter is 280µm • Monitor PD application Absolute Maximum Rating Tc=25ºC

10G PIN photodiode

Abstract: LuminentOIC
Contextual Info: InGaAs 10G PIN Photodiode Chip R-11-020-C Features • InGaAs/InP PIN Photodiode • High Responsivity @1310 nm and 1550 nm • Low dark current • Fast response • Operate at -40 to 85ºC • Active diameter is 20µm • 10G Optical receiver application

Contextual Info: InGaAs PIN Photodiode R-11-XXX-G-B B Features • InGaAs/InP PIN Photodiode • High Responsivity @1310 nm and 1550 nm • Low dark current • Fast pulse response • -40 to 85ºC operating temperature • Hermetically sealed 3-pin metal case • Active diameter is 40, 55, 75,100 or 300 µm

Photodiode 1310

Abstract: InGaAs photodiode TO-46 R-11-055-G-B R-11-075-G-BB R-11-100-G-B R-11-300-G-B 10 gb laser photodiode TO46 package R1105
Contextual Info: InGaAs PIN Photodiode R-11-xxx-G-B B Features • InGaAs/InP PIN Photodiode • High Responsivity @1310 nm and 1550 nm • Low dark current • Fast pulse response • -40 to 85ºC operating temperature • Hermetically sealed 3-pin metal case • Active diameter is 55, 75,100 or 300 µm

1550 nm DFB

Abstract: agere dfb laser A1112 A1112NB A1112NC A1112PB A1112PC agere photodiode Fujikura butterfly CATV laser 1550
Contextual Info: Data Sheet January 2001 A1112 High-Power 1550 nm DFB Source Lasers Description The A1112 1550 nm DFB laser modules are highpower devices in a 14-pin butterfly package with a thermoelectric cooler and monitor photodiode. The lasers are designed to be used in conjunction with

luminent

Abstract: InGaAs photodiode 1310 1550 InGaas PIN photodiode chip
Contextual Info: InGaAs 10 Gigabit PIN Photodiode Chip R-SP-0004-V2 Features • InGaAs/InP PIN Photodiode • High responsivity at 1310 nm and 1550 nm • Low dark current • Fast response • Operates at –40 to +85ºC • Active diameter is 20µm Applications • 10 Gigabit Optical Receiver

lucent DFB laser application

Abstract: Lucent Laser 2000 lucent laser lucent laser 1550 lucent 1550 nm catv Fujikura butterfly DFB CATV lucent microelectronics laser A1112NB
Contextual Info: Data Sheet January 2001 A1112 High-Power 1550 nm DFB Source Lasers Description The A1112 1550 nm DFB laser modules are highpower devices in a 14-pin butterfly package with a thermoelectric cooler and monitor photodiode. The lasers are designed to be used in conjunction with

Contextual Info: InGaAs PIN Photodiode R-11-XXX-G-B B -C Features • InGaAs/InP PIN Photodiode • High Responsivity @1310 nm and 1550 nm • Low dark current • Fast pulse response • -40 to 85ºC operating temperature • Hermetically sealed 3-pin metal case • Active diameter is 40, 55, 75,100 or 300 µm

pin photodetector 1300nm

Abstract: photodetector 1300nm photodetector PIN 1300nm
Contextual Info: 1300 / 1550 nm PD-1375*-ip Description: PD-1375*-ip – is a series of photodetector modules for spectral range of 1300/1550 nm based on InGaAs PIN photodiode and coupled with singlemode PD-1375s-ip or multimode (PD-1375m-ip) optical fiber. Hermetically sealed modules are performed in standard coaxial package

InGaas PIN photodiode, 1550 sensitivity

Abstract: 1300nm transceiver 65 ber single supply operation amplifer
Contextual Info: 1300 nm 1550 nm T-11-155-G-B 155Mbps PIN-TIA Receiver Features z z z z InGaAs/InP PIN Photodiode with transimpedance amplifer Differential ended output Single +5V operation -40 ~85℃ operating temperature Packaging z Integrated 4-pin TO-46 ball lens cap package

ORTEL DFB laser

Abstract: Ortel ortel laser 1550 rin 1550 laser diode 1711A 1710B dfb 1550 nm laser diode dfb laser diode 1550 Laser 500 mW 12 pin
Contextual Info: High Power 1550 nm DFB Laser Model 1710A/B, 1711A/B D S T A H T E A E T he 1710A/B and 1711A/B modules are high power 1550 nm laser devices in a 14 pin butterfly package thermoelectric cooler and monitor photodiode. with a The laser is designed to be used in conjunction with commercially available

Siemens Semiconductors

Abstract: InGaAs 1550 photodiode transimpedance amplifier InGaAs 1550 photodiode transimpedance amplifier P Siemens photodiode
Contextual Info: SBH52454x FSAN BIDI Transceiver Optical Module for ATM-PON ONU Applications, 1300 nm Emitting-/1550 nm Receiving Function, High Power FP-Laser, InGaAs/InP-PIN Photodiode with 622 Mbit/s Transimpedance Amplifier • Designed for applications in passive-optical networks