PIN DIODE ATTENUATOR UHF Search Results
PIN DIODE ATTENUATOR UHF Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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SF-SFP28LPB1W-0DB |
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Amphenol SF-SFP28LPB1W-0DB SFP28 Loopback Adapter Module for SFP28 Port Compliance Testing - 0dB Attenuation & 1W Power Consumption | |||
SF-SFPPLOOPBK-0DB |
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Amphenol SF-SFPPLOOPBK-0DB SFP+ Loopback Adapter Module for SFP+ Port Compliance Testing - 0dB Attenuation & 0W Power Consumption | |||
SF-SFP28LPB1W-3DB |
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Amphenol SF-SFP28LPB1W-3DB SFP28 Loopback Adapter Module for SFP28 Port Compliance Testing - 3dB Attenuation & 1W Power Consumption | |||
SF-100GLB2.5W-0DB |
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Amphenol SF-100GLB2.5W-0DB QSFP 100G Loopback Adapter Module for QSFP28 Port Testing - 0dB Attenuation & 2.5W Power Consumption [100-Gigabit Ethernet Ready] | |||
SF-NLMAMB0001-0001 |
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Amphenol SF-NLMAMB0001-0001 OSFP 400G Loopback Adapter Module for OSFP Port Testing - 0dB Attenuation & 0W Power Consumption [400-Gigabit Ethernet Ready] |
PIN DIODE ATTENUATOR UHF Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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MI204Contextual Info: b E M T fiS 1} GD1 7 7 2 7 222 • ANTENNA SWITCH MI204 PIN DIODE DESCRIPTION OUTLINE DRAWING The M I204 PIN diode is employing a high reliability glass construction designed for RF small signal attenuator in V H F UHF. FEATURES ] ii • Long carrier lifetime |
OCR Scan |
MI204 MI204 | |
JDP4P02UContextual Info: JDP4P02U TOSHIBA Diode Silicon Epitaxial Pin Type JDP4P02U UHF~VHF Band RF Attenuator Applications • Unit: mm Two independent diodes are packed into 4-pin ultra-small packages and suitable for high-density mounting. · Low capacitance: CT = 0.3 pF typ. |
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JDP4P02U JDP4P02U | |
Contextual Info: JDP4P02U TOSHIBA Diode Silicon Epitaxial Pin Type JDP4P02U UHF~VHF Band RF Attenuator Applications • Unit: mm Two independent diodes are packed into 4-pin ultra-small packages and suitable for high-density mounting. • Low capacitance: CT = 0.3 pF typ. |
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JDP4P02U | |
JDP4P02UContextual Info: JDP4P02U TOSHIBA Diode Silicon Epitaxial Pin Type JDP4P02U UHF~VHF Band RF Attenuator Applications • Unit: mm Two independent diodes are packed into 4-pin ultra-small packages and suitable for high-density mounting. • Low capacitance: CT = 0.3 pF typ. |
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JDP4P02U JDP4P02U | |
UM4301B
Abstract: z02 surface mounted transistor UM2100 Microwave PIN diode UM7301B RS12 UM4000 UM4300 UM6000 UM7000
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UM2100, UM4000, UM4300, UM9552 UM6000, UM7000 UM4301B z02 surface mounted transistor UM2100 Microwave PIN diode UM7301B RS12 UM4000 UM4300 UM6000 UM7000 | |
HP4291A
Abstract: JDP2S02AS
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JDP2S02AS HP4291A JDP2S02AS | |
JDP2S01UContextual Info: JDP2S01U TOSHIBA Diode Silicon Epitaxial Pin Type JDP2S01U UHF~VHF Band RF Attenuator Applications • Unit: mm Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. · Low series resistance: rs = 0.65 Ω typ. |
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JDP2S01U JDP2S01U | |
HP4291A
Abstract: JDP2S02S
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JDP2S02S HP4291A JDP2S02S | |
JDP2S02TContextual Info: JDP2S02T TOSHIBA Diode Silicon Epitaxial Pin Type JDP2S02T UHF~VHF Band RF Attenuator Applications • Unit: mm Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. · Low series resistance: rs = 1.0 Ω typ. |
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JDP2S02T JDP2S02T | |
Contextual Info: 1SV312 TOSHIBA Diode Silicon Epitaxial Pin Type 1SV312 VHF~UHF Band RF Attenuator Applications • Unit: mm Two independent diodes mounted onto a 4-pin ultra compact package and it is suitable for high-density circuit design. • Low capacitance: CT = 0.25 pF typ. |
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1SV312 | |
Contextual Info: JDP2S02S TOSHIBA Diode Silicon Epitaxial PIN Type JDP2S02S UHF~VHF Band RF Attenuator Applications Unit: mm • Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. • Low series resistance: rs = 1.0 Ω typ. |
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JDP2S02S | |
HP4291A
Abstract: JDP2S02AS TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE
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JDP2S02AS HP4291A HP4291A JDP2S02AS TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE | |
HP4291A
Abstract: JDP2S02S
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JDP2S02S HP4291A JDP2S02S | |
JDP2S04EContextual Info: JDP2S04E TOSHIBA Diode Silicon Epitaxial Pin Type JDP2S04E VHF~UHF Band RF Attenuator Applications • Unit: mm Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. • Low capacitance ratio: CT = 0.25 pF typ. |
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JDP2S04E JDP2S04E | |
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Contextual Info: JDP2S01E TOSHIBA Diode Silicon Epitaxial Pin Type JDP2S01E UHF~VHF Band RF Attenuator Applications • Unit: mm Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. • Low series resistance: rs = 0.65 Ω typ. |
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JDP2S01E | |
Contextual Info: JDP2S01S TOSHIBA Diode Silicon Epitaxial PIN Type JDP2S01S UHF~VHF Band RF Attenuator Applications Unit: mm • Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. • Low series resistance: rs = 0.65Ω typ. |
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JDP2S01S | |
Contextual Info: JDP2S01T TOSHIBA Diode Silicon Epitaxial Pin Type JDP2S01T UHF~VHF Band RF Attenuator Applications • Unit: mm Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. • Low series resistance: rs = 0.65 Ω typ. |
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JDP2S01T | |
JDP2S01EContextual Info: JDP2S01E TOSHIBA Diode Silicon Epitaxial Pin Type JDP2S01E UHF~VHF Band RF Attenuator Applications • Unit: mm Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. · Low series resistance: rs = 0.65 Ω typ. |
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JDP2S01E JDP2S01E | |
JDP2S01TContextual Info: JDP2S01T TOSHIBA Diode Silicon Epitaxial Pin Type JDP2S01T UHF~VHF Band RF Attenuator Applications • Unit: mm Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. • Low series resistance: rs = 0.65 Ω typ. |
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JDP2S01T JDP2S01T | |
1SV312Contextual Info: 1SV312 TOSHIBA Diode Silicon Epitaxial Pin Type 1SV312 VHF~UHF Band RF Attenuator Applications • Unit: mm Two independent diodes mounted onto a 4-pin ultra compact package and it is suitable for high-density circuit design. • Low capacitance: CT = 0.25 pF typ. |
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1SV312 1SV312 | |
JDP2S01TContextual Info: JDP2S01T TOSHIBA Diode Silicon Epitaxial Pin Type JDP2S01T UHF~VHF Band RF Attenuator Applications • Unit: mm Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. • Low series resistance: rs = 0.65 Ω typ. |
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JDP2S01T JDP2S01T | |
HP4291A
Abstract: JDP2S01E
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JDP2S01E HP4291A JDP2S01E | |
Contextual Info: JDP2S02S TOSHIBA Diode Silicon Epitaxial PIN Type JDP2S02S UHF~VHF Band RF Attenuator Applications Unit: mm • Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. • Low series resistance: rs = 1.0 Ω typ. |
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JDP2S02S | |
Contextual Info: JDP2S04E TOSHIBA Diode Silicon Epitaxial Pin Type JDP2S04E VHF~UHF Band RF Attenuator Applications • Unit: mm Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. • Low capacitance ratio: CT = 0.25 pF typ. |
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JDP2S04E |