PIN DIODE Search Results
PIN DIODE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 |
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Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 |
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Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 |
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Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 |
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Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 |
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Zener Diode, 5.6 V, ESC | Datasheet |
PIN DIODE Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| PIN Diode Driver Circuit |
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AN10174-01 - A Low Impedance PIN Diode Driver Circuit with Temperature Compensation. | Original | 52.18KB | 5 |
PIN DIODE Datasheets Context Search
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Contextual Info: PIN DIODES A " • ■jfv- 'v :>■: Dh Oh >C■t Ultra-fast Switching Silicon PIN Diodes. 14 Fast Switching Silicon PIN D io d e s . 15 Beam Lead PIN Diodes. 16 |
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Contextual Info: SILICON PIN DIODES High voltage PIN diodes HIGH VOLTAGE PIN DIODES Applications Characteristics These devices are most often used to control Radio Frequency RF and microwave signals. Typically, high-voltage PIN diodes are found in high power switches and phase shifters. |
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SH92103 SH91107 SH91207 SH90207 SH93103 | |
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Contextual Info: SILICON PIN DIODES High voltage PIN diodes HIGH VOLTAGE PIN DIODES Applications Characteristics These devices are most often used to control Radio Frequency RF and microwave signals. Typically, high-voltage PIN diodes are found in high power switches and phase shifters. |
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SMD MARKING CODE s4Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAP1321-04 Silicon PIN diode Product specification 2001 Apr 17 Philips Semiconductors Product specification Silicon PIN diode BAP1321-04 FEATURES PINNING • High voltage, current controlled PIN DESCRIPTION |
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M3D088 BAP1321-04 MAM107 613512/01/pp8 SMD MARKING CODE s4 | |
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Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D102 BAP64-05W Silicon PIN diode Product specification 2000 Jul 13 NXP Semiconductors Product specification Silicon PIN diode BAP64-05W FEATURES PINNING • High voltage, current controlled PIN DESCRIPTION |
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M3D102 BAP64-05W BAP64-05W OT323 MAM382 R77/01/pp9 771-BAP64-05W-T/R | |
BAP51-03
Abstract: DIODE marking S4 06 SMD MARKING CODE s4 SC-76
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BAP51-03 OD323 sym006 OD323) R77/04/pp8 BAP51-03 DIODE marking S4 06 SMD MARKING CODE s4 SC-76 | |
"marking code D2"
Abstract: DIODE marking S4 06 SMD MARKING CODE s4 BAP63-03 SC-76
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BAP63-03 sym006 OD323 OD323) BAP63-0ontact R77/04/pp8 "marking code D2" DIODE marking S4 06 SMD MARKING CODE s4 BAP63-03 SC-76 | |
TESLA DIODES
Abstract: PIN DIODE UMX5101 magnetic diode
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UMX5101 UMX5101 TESLA DIODES PIN DIODE magnetic diode | |
DH60034Contextual Info: SILICON PIN DIODES Microwave applications SILICON LIMITER PIN DIODES Description These passivated mesa PIN diodes have a thin I layer. This series of diodes is available as chips and in hermetic ceramic packages. They operate as power dependent variable resistances and provide |
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Q62702-A1211Contextual Info: BAR 63-02W Silicon PIN Diode • PIN diode for high speed switching 2 of RF signals • Low forward resistance, small capacitance small inductance • Very low capacitance 1 • For frequencies up to 3 GHz VES05991 Type Marking Ordering Code Pin Configuration |
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3-02W VES05991 SCD-80 Q62702-A1211 Sep-07-1998 100MHz Q62702-A1211 | |
M208Contextual Info: TEKELEC COMPONENTS bflE '10G37Ô7 000G232 3fl2 D PIN DIODES SILICON LIMITER PIN DIODES These passivated mesa PIN diodes have a thin I layer, This series of diodes is available as chips and in hermetic ceram ic packages. They operate as power dependent variable resistances and provide |
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10G37 000G232 M208 | |
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Contextual Info: PGR 203 02 PIN Receiver Module up to 3 Gb/s Key Features • Hermetic, 14 pin butterfly package with multisourced footprint • FC/PC, SC or ST connector • InGaAs PIN photo diode with low noise GaAs MMIC preamplifier • AC-coupled, differential data output |
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STM-16 OC-48 SE-164 1522-PGR | |
GC4600
Abstract: high power pin diode High Power PIN Diodes IR STUD diodes
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GC4600 GC4605 GC4600 high power pin diode High Power PIN Diodes IR STUD diodes | |
1640CTContextual Info: SBL F,B 1630CT & SBL(F,B)1640CT Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier FEATURES TO-220AB ITO-220AB 2 3 1 1 SBL16xxCT PIN 1 PIN 2 PIN 3 CASE 2 3 SBLF16xxCT PIN 1 PIN 2 PIN 3 TO-263AB K • • • • • • Guardring for overvoltage protection |
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1630CT 1640CT O-220AB ITO-220AB SBL16xxCT SBLF16xxCT O-263AB J-STD-020C 2002/95/EC 1640CT | |
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Contextual Info: UG F,B 10FCT & UG(F,B)10GCT, BYT28(F,B)-300 & BYT28(F,B)-400 Vishay General Semiconductor Dual Common-Cathode Ultrafast Soft Recovery Rectifier ITO-220AB TO-220AB 2 PIN 2 PIN 3 CASE 1 1 BYT28, UG10 Series PIN 1 3 2 3 BYT28F, UGF10 Series PIN 1 PIN 2 PIN 3 |
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10FCT 10GCT, BYT28 O-220AB ITO-220AB BYT28, BYT28F, UGF10 O-263AB | |
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Contextual Info: PGR 203 02 Optical Receiver Submodule for 2.5 Gbps DATA FIBER PIN PREAMP Key Features • • • • • • • • • • Hermetic, 14 pin butterfly package Single-mode fiber pigtail FC/PC, SC or ST connector InGaAs PIN photo diode with low noise GaAs MMIC |
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STM-16 OC-48 1522-PGR | |
4 pin optocoupler
Abstract: H11B815 OPTOCOUPLER 4-PIN application note
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H11B815 H11B815 E90700) DS300216 4 pin optocoupler OPTOCOUPLER 4-PIN application note | |
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Contextual Info: UG F,B 18ACT thru UG(F,B)18DCT Vishay General Semiconductor Dual Common-Cathode Ultrafast Plastic Rectifier TO-220AB ITO-220AB 2 PIN 2 PIN 3 CASE 1 1 UG18xCT Series PIN 1 3 2 3 UGF18xCT Series PIN 1 PIN 2 PIN 3 TO-263AB K TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode |
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18ACT 18DCT O-220AB ITO-220AB UG18xCT UGF18xCT O-263AB J-STD-020C, | |
TO218AB package
Abstract: GEA15 TO-218AB Package
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O-218AB Q67040-A Jul-31-1996 Jul-31 GPT05 TO218AB package GEA15 TO-218AB Package | |
DR65-0003
Abstract: SPDT FETs AN3008 DR65-0109 AN-3008
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AN3008 DR65-0109 DR65-0003 SPDT FETs AN-3008 | |
S-875045CUP-ACA-T2
Abstract: 4392 ic equivalent overcharge voltage detection ic SOT-89 marking N2
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Contextual Info: Æ ic te ! RadTolerant Field Programmable Gate Arrays - m Features • Programming Technology Prevents Reverse Engineering and Design Theft General Characteristics • • TestedTotal Ionizing Dose TID Survivability Level • Packages: 132-Pin, 172-Pin, 196-Pin, and 256-Pin Ceramic |
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132-Pin, 172-Pin, 196-Pin, 256-Pin CQ172 CQ196 CQ256 CCS08and CQ256, | |
S93C56 DATASHEET
Abstract: S93C46 DATASHEET S93C66D atmel 93C66A PROGRAM TO INTERFACE SERIAL EEPROM s93c56 WITH A S93CS EEPROM s93c66 S93C46 PROGRAM TO INTERFACE SERIAL EEPROM s93c46 S93C46d
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BAQ806
Abstract: diode 1407 diode 104
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M3D168 BAQ806 DO-214AC SCA60 115104/00/01/pp12 BAQ806 diode 1407 diode 104 | |