PIN CONFIGURATION BFW 11 Search Results

BFW92

Contextual Info: SIEMENS BFW 92 NPN Silicon RF Transistor • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFW 92 BFW 92 Q62702-F321 Pin Configuration

S71GL-N

Abstract: Flash Memory Product Selector Guide MARKING 9B ME S29PL127J S71PL032J40 S71PL-J S71PL256N PSRAM A20-A18 sram 256mb 64X
Contextual Info: S71PL-J Based MCPs Data Sheet Retired Product S71PL-J Based MCPs Cover Sheet This product has been retired and is not recommended for new designs. For new designs, S71GL-A or S71GL-N supersedes S71PL-J. Please contact your local Spansion sales office to determine the appropriate migration device, specifications, and

S71PL256N

Abstract: top mark e5 S29PL127J S71GL-N S71PL032J40 S71PL-J TSB064-64-ball 16SRAM
Contextual Info: S71PL-J Based MCPs Data Sheet Retired Product S71PL-J Based MCPs Cover Sheet This product has been retired and is not recommended for new designs. For new designs, S71GL-A or S71GL-N supersedes S71PL-J. Please contact your local Spansion sales office to determine the appropriate migration device, specifications, and

Contextual Info: S71PL-J Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 256M/128/64/32 Megabit (16/8/4/2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static RAM/pSRAM Data Sheet (Advance Information)

512MB NOR FLASH

Abstract: BFW transistors Diode Mark N10 MCP NOR FLASH SDRAM 137-Ball 66 ball nor flash JESD 95-1, SPP-010 NAND FLASH BGA S72WS256NDE S72WS256NEE
Contextual Info: S72WS-N Based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus 256/512 Mb Simultaneous Read/Write, Burst Mode Flash Memory 512 Mb NAND Flash 1024 Mb NAND Interface ORNAND Flash Memory on Bus 1 512/256/128 Mb 8M/4M/2M x 16-bit x 4 Banks Mobile SDRAM on

pin configuration BFW 11

Contextual Info: Maximum Ratings DEVICE VDS V V GSR Electrical characteristics(Ta=25°C, unless otherwise specified) PD (W) ^G SS (V) mm e ia m ^ g s <oH) (V) max VDs & 'd (nA) (V) *g s s ® (nA) max mm (A) mm (A) mm BFW 10 30 30 30 0.3 30 10 8 15 0.5 0.1 BFW11 30 30 30

512MB NOR FLASH

Abstract: BTA160 BGA 130 MCP NAND DDR S72WS512NFFKFWZ2 Flash MCp nand DRAM 137-ball ball 128 mcp NAND FLASH BGA S29WS256N S72WS256ND0 S72WS256NDE
Contextual Info: S72WS-N Based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus 256/512 Mb Simultaneous Read/Write, Burst Mode Flash Memory 512 Mb NAND Flash 1024 Mb NAND Interface ORNAND Flash Memory on Bus 1 512/256/128 Mb 8M/4M/2M x 16-bit x 4 Banks Mobile SDRAM on Bus 2

sram 256mb 64X

Abstract: S29PL127J S71PL032J40 S71PL032J80 S71PL032JA0 S71PL-J S71PL256N S71PL127J
Contextual Info: S71PL-J Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 256M/128/64/32 Megabit (16/8/4/2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static RAM/Pseudo Static RAM

TRANSISTOR BFW 11

Abstract: BFW10 pins pin configuration of BFW10 BFW10 BF 494 C bf 494 transistor BF494 CIL 108 transistor bf 194b BF200 transistor
Contextual Info: METAL-CAN & EPOXY TRANSISTORS CONTINENTAL DEVICE INDIA 3EE D • S3fl33T4 ODOQOlb T COMMERCIAL/ENTERTAINMENT APPLICATIONS VCEO VCBO VEBO hFE at bias Voíts Volts Volts min min/max min min Device Cob ts 1C VCE ICM PTA ICBO VCE sat fT mA Volts mA mW Volts MHz Pf nsec

Contextual Info: METAL-CAN & EPOXY TRANSISTORS CON TINENTAL DEVICE INDIA 3EE D • S3fl33T4 ODOQOlb T COMMERCIAL/ENTERTAINMENT APPLICATIONS Device VCEO VCBO VEBO hFE at bias Voíts Volts Volts min min min VCE ICM PTA ICBO VCE sat mA Volts mA mW max max 1C min/max typ Cob

bfw10 transistor

Abstract: pin configuration of BFW10 BFW10 pins bf 194 pin configuration CIL 108 transistor bf 194b transistor bf 179 transistor BF 245 PIN CONFIGURATION BF 494 BF 194 transistor
Contextual Info: METAL-CAN & EPOXY TRANSISTORS CON TINENTAL DEVICE INDIA 3EE D • S3fl33T4 DDOOOlt T COMMERCIAL/ENTERTAINMENT APPLICATIONS VCEO VCBO VEBO hFE at bias Voíts Volts Volts min min/max min min Device Cob ts 1C VCE ICM PTA ICBO VCE sat fT mA Volts mA mW Volts MHz Pf nsec

GDS1110BD

Abstract: GDS1110BC GDS1110AD GDS1110 GDS1110BB bau 95 SA-1110 B010 FP3031 GDS1110AC
Contextual Info: Intel StrongARM* SA-1110 Microprocessor Specification Update April 2001 Notice: The SA-1110 may contain design defects or errors known as errata. Characterized errata that may cause the SA-1110’s behavior to deviate from published specifications are documented in this

DA12A

Contextual Info: S72WS-N Based MCPs 1.8 Volt-only Multi-Chip Product MCP x16 Flash Memory and SDRAM on Split Bus 256/512/768 Mb Simultaneous Read/Write, Burst Mode Flash Memory, 512 Mb NAND Flash 1024 Mb NAND Interface ORNAND Flash Memory on Bus 1 256/128 Mb (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Bus 2

THESYS

Abstract: MIKROELEKTRONIK ERFURT SN74C00N MAR6 65520 405B TH7002I TH7010
Contextual Info: TH7002 TH7002 High Frequency Divider Preliminary Information Preliminary Data This data sheet contains preliminary information on new products in development. The specifications are subject to change without notice. Verify with your local Thesys Sales Office that you have the latest data sheet

CRC-32

Abstract: DE6003 DS3506 WL100 AN142 BT 01111 BT107 FW31 FW22 FW30
Contextual Info: MAY 1996 ADVANCE INFORMATION DS4054-2.2 WL100 WLAN INTERFACE CIRCUIT FEATURES • Low Power CMOS Technology ■ Flexible Data Transceiver ■ Clock Recovery with Continuous Calibration for Flexible Packet Length ■ Flexible Preamble Format ■ Selectable Data Rates: 156•25kb/s, 250kb/s,

TRANSISTOR BFW 11 pin diagram

Abstract: pin diagram of TRANSISTOR BFW 11 BFW 43 transistor LZ23242J CM500
Contextual Info: U23242J LZ23242J 1/3 type B/W CCD Area Sensor for CCIR U23242J is a 1/3-type 6.0 mm solid state image sensor that consists of PN phote-diodes and CCDS (charge-coupled devices). Having approximately 320000 pixels (horizontal 542 X vertical 562), the sensor provides a high resolution stable

Contextual Info: 5Ü GEC PLESSEY MAY 1996 S I' M I C O N I U C T O R S ADVANCE INFORMATION DS4054-2.2 WL100 WLAN INTERFACE CIRCUIT The WL100, together with the DE6003 frequency hopping radio transceiver, im plem ents a wide variety of WLAN applications where NRZ encoding is used.

philips FW21

Abstract: philips FW16 philips FW20 FW26 FW30 AN142 CRC-32 DE6003 DS3506 WL100
Contextual Info: Obsolescence Notice This product is obsolete. This information is available for your convenience only. For more information on Zarlink’s obsolete products and replacement product lists, please visit http://products.zarlink.com/obsolete_products/ MAY 1996

philips FW21

Contextual Info: MAY 1996 ADVANCE INFORMATION DS4054-2.2 WL100 WLAN INTERFACE CIRCUIT FEATURES • Low Power CMOS Technology ■ Flexible Data Transceiver ■ Clock Recovery with Continuous Calibration for Flexible Packet Length ■ Flexible Preamble Format ■ Selectable Data Rates: 156•25kb/s, 250kb/s,

philips FW21

Abstract: philips fw12 philips FW16 philips FW20 DS3506 WL100 AN142 CRC-32 DE6003 FW30
Contextual Info: MAY 1996 ADVANCE INFORMATION DS4054-2.2 WL100 WLAN INTERFACE CIRCUIT FEATURES • Low Power CMOS Technology ■ Flexible Data Transceiver ■ Clock Recovery with Continuous Calibration for Flexible Packet Length ■ Flexible Preamble Format ■ Selectable Data Rates: 156•25kb/s, 250kb/s,

philips FW20

Abstract: philips fw12 bfw 10 transistor philips FW16 philips FW21 BFW transistors fw12 antenna diversity switch st9 technical AN142
Contextual Info: MAY 1996 ADVANCE INFORMATION DS4054-2.2 WL100 WLAN INTERFACE CIRCUIT FEATURES • Low Power CMOS Technology ■ Flexible Data Transceiver ■ Clock Recovery with Continuous Calibration for Flexible Packet Length ■ Flexible Preamble Format ■ Selectable Data Rates: 156•25kb/s, 250kb/s,

philips FW20

Abstract: philips FW21 philips FW16 antenna diversity switch for WLAN bfw 10 transistor antenna diversity switch AN142 CRC-32 DE6003 DS3506
Contextual Info: MAY 1996 ADVANCE INFORMATION DS4054-2.2 WL100 WLAN INTERFACE CIRCUIT FEATURES • Low Power CMOS Technology ■ Flexible Data Transceiver ■ Clock Recovery with Continuous Calibration for Flexible Packet Length ■ Flexible Preamble Format ■ Selectable Data Rates: 156•25kb/s, 250kb/s,

philips FW21

Abstract: philips FW20 BT 01111 WL100 RX FW28 FW22 philips FW10 CK400N FW18
Contextual Info: MAY 1996 ADVANCE INFORMATION DS4054-2.2 WL100 WLAN INTERFACE CIRCUIT FEATURES • Low Power CMOS Technology ■ Flexible Data Transceiver ■ Clock Recovery with Continuous Calibration for Flexible Packet Length ■ Flexible Preamble Format ■ Selectable Data Rates: 156•25kb/s, 250kb/s,

Contextual Info: JULY 1995 ADVANCE INFORMATION DS4054-1.7 WL100 WLAN INTERFACE CIRCUIT The WL100, together with the DE6003 frequency hopping radio transceiver, implements a wide variety of WLAN applications where NRZ encoding is used. FEATURES • Low Power CMOS Technology