PHPT61002PYC Search Results

Contextual Info: LF PA K 56 PHPT61002NYC 100V, 2 A NPN high power bipolar transistor 9 January 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61002PYC

Contextual Info: Information about product quality of device type PHPT61002PYC Quality and reliability data provided by NXP Semiconductors is intended to be a non-binding estimate of product performance only. It does not imply that any performance levels reflected in such data can be met

Contextual Info: LF PA K 56 PHPT61002PYC 100 V, 2 A PNP high power bipolar transistor 10 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61002NYC.

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Contextual Info: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint

Contextual Info: NXP transistors in LFPAK56 – the true power package for smart efficiency Full power in half the footprint First bipolar transistors in LFPAK/Power-SO8 These high-power bipolar transistors, housed in LFPAK56 Power-SO8 packages, deliver DPAK-like thermal and electrical performance in just half the footprint. Offering reliable,