PHP3N60 Search Results

Contextual Info: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • • • • • PHP3N60E, PHB3N60E SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching Stable off-state characteristics High thermal cycling performance

rrb surface transistor

Contextual Info: Product soecification Philips Semiconductors PowerMOS transistors PHP3N60E, PHB3N60E Avalanche energy rated_ SYMBOL FEATURES • • • • • QUICK REFERENCE DATA Repetitive Avalanche Rated Fast switching Stable off-state characteristics

PHB3N60E

Abstract: PHP2N60 PHP3N60E
Contextual Info: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP3N60E, PHB3N60E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance

D 1062 transistor

Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION PHP3N60E QUICK REFERENCE DATA SYMBOL N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and

Contextual Info: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated SYMBOL FEATURES • • • • • PHP3N60E, PHB3N60E QUICK REFERENCE DATA Repetitive Avalanche Rated Fast switching Stable off-state characteristics High thermal cycling performance

PHP3N60

Abstract: PHX2N60
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in an isolated plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast

FREDFET

Abstract: PHB6ND50E PHP3N60 PHP4N50 PHP6ND50E Power FREDFET Transistor
Contextual Info: Philips Semiconductors Product specification PowerMOS transistors FREDFET, Avalanche energy rated FEATURES PHP6ND50E, PHB6ND50E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance

buk7530-55

Abstract: mosfet-n SOT166 TOPFET buk7530
Contextual Info: SELECTION GUIDE Page TOPFETs 14 PowerMOS Transistors 16 Insulated Gate Bipolar Transistors 23 Philips Semiconductors TOPFETs VDS Selection Guide @ID FUSION O) (V) (A) Id w Pd (W) TYPE NUMBER TECHNOLOGY ENVELOPE 50 0.028 25 50 125 BUK106-50L TOPFET SOT263

buk455

Abstract: BUK445-100A BUK444 50SP BUK854-500IS BUK854-500 BUK454
Contextual Info: Philips Semiconductors Replacement List REPLACED / WITHDRAWN TYPES The following type numbers were in the previous issue of this handbook, but are not in the current version: TYPE NUMBER BUK105-50L REPLACED BY REASON FOR DELETION see BUK104/106-50L BUK105-50LP

PHP3N60

Abstract: PHP6N60E PHX6N60E
Contextual Info: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated PHX6N60E FEATURES SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Isolated package

PCA1318P

Abstract: philips Pca1318p tda8369 TEA5713 pca1318 ON4801 92112 eeprom on4800 ON4836 eeprom 92112
Contextual Info: PRODUCT DISCONTINUATION DN42 NOTICE December 31, 1999 CONTRACTS DEPT. NOTE NEW CODING DISCONTINUATION TYPE CODE T= Type number fully withdrawn N= Packing option ONLY withdrawn SOURCE CODE C = Customer specific product M = Multi source product S = Sole source product

PHP2N60

Abstract: PHP3N60E PHX1N60 PHX3N60E
Contextual Info: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated PHX3N60E FEATURES SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Isolated package

PHB4N60E

Abstract: PHP3N60 PHP4N60E
Contextual Info: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP4N60E, PHB4N60E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance

PHP6N50E

Abstract: PHB6N50E PHP3N60 PHP4N50 USON-10
Contextual Info: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP6N50E, PHB6N50E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance

transistor IRF730

Abstract: IRF730 PHP3N50 PHP3N60 PHP5N40
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Avalanche energy rated IRF730 FEATURES SYMBOL QUICK REFERENCE DATA • Repetitive Avalanche Rated • Fast switching • High thermal cycling performance • Low thermal resistance d VDSS = 400 V

T0-220AB

Abstract: PHILIPS MOSFET igbt mosfet switch BUK866 4001z
Contextual Info: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Types added to the range since the last issue of data handbook SC13 1995 are shown in bold print, TYPE NUMBER TECHNOLOGY PACKAGE PAGE BUK100-50DL TOPFET T0220AB 38 BUK100-50GL TOPFET

BUK444-200

Abstract: 100a mosfet Philips Semiconductors Selection Guide BUK454-60H BUK108-50DL BUK102-50GL BUk2 BUK44 BUK9630-55 BUK9570-55
Contextual Info: Philips Semiconductors TOPFETs Selection Guide VDs Rdsion lD Id V) (fl) (A) (A) Pd (W) TYPE NUMBER TECHNOLOGY ENVELOPE 50 0.028 25 50 125 BUK106-50L TOPFET 50 0.028 25 50 125 BUK106-50LP TOPFET SOT263-O1 50 0.028 25 50 125 BUK116-50L TOPFET SOT426 50

837 mosfet

Abstract: 912 MOSFET T0-220AB PHILIPS MOSFET igbt BUK108-50DL 50SP 200b mosfet MOSFET 1053 mosfet handbook
Contextual Info: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Types added to the range since the last issue of data handbook SC13 1995 are shown in bold print. TYPE NUMBER TECHNOLOGY PACKAGE BUK100-50DL TOPFET T0220AB PAGE 38 BUK100-50GL TOPFET

BUK445-100A

Abstract: BUK445-600B
Contextual Info: Philips Semiconductors Replacement List REPLACED / WITHDRAWN TYPES The following type numbers were in the previous issue of this handbook, but are not in the current version: TYPE NUMBER REPLACED BY BUK105-50L see BUK104/106-50L BUK105-50LP see BUK104/106-50LP

PHB7N40E

Abstract: PHP3N50 PHP3N60 PHP5N40 PHP7N40E
Contextual Info: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP7N40E, PHB7N40E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

Contextual Info: Product specification Philips Semiconductors PHX4N60E PowerMOS transistors Avalanche energy rated FEATURES • • • • • QUICK REFERENCE DATA SYMBOL Repetitive Avalanche Rated Fast switching Stable off-state characteristics High thermal cycling performance

ph 4148 zener diode

Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Contextual Info: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS

PHP3N60

Abstract: PHP6N60E
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycling