PHOTOTRANSISTOR ARRAY Search Results

Contextual Info:  !D monolithic 13 NPN phototransistor array EEEEEEEEEEEEEEEECFCA93298C Optical device consisting of a monolithic 13 silicon NPN phototransistor array chip with high gain uniformity for the output signals. The active area of each phototransistor is 0.2 x 0.45

phototransistor array

Abstract: Optolab OL2013R phototransistor datasheet ET8001 OL2013R OL8110 OPTOLAB
Contextual Info: OL2013R 13 Element SMD Phototransistor Array Features • • • • • High speed phototransistor OL8110 chips Reference holes for precise mounting Compact size and low cost Custom design available Single chip placement for high speed applications Application

phototransistor array

Abstract: ET8001 Phototransistor-Array phototransistor datasheet OL2006 OL8110
Contextual Info: OL2006 6 Element SMD Phototransistor Array Features • • • • • • High speed phototransistor OL8110 chips Reference holes for precise mounting Compact size and low cost Also available with mounted reticle Custom design available Single chip placement for high speed applications

phototransistor array

Abstract: phototransistor datasheet Phototransistor-Array ET8001 OL2013R OL8110 Optolab ERFURT
Contextual Info: OL2013R 13 Element SMD Phototransistor Array with factory pre-mounted reticle Features • • • • • High speed phototransistor OL8110 chips Reference holes for precise mounting Compact size and low cost Custom design available Single chip placement for high speed applications

phototransistor array

Abstract: OL2009 OL8110 Optolab DSASW0031987 phototransistor datasheet ET8001
Contextual Info: OL2009 9-Element SMD Phototransistor Array Features • • • • • • High speed phototransistor OL8110 chips Reference holes for precise mounting Compact size and low cost Also available with mounted reticle Custom design available Single chip placement for high speed applications

OL2009

Abstract: OL8110 phototransistor datasheet ET8001 photo-transistor OPTOLAB
Contextual Info: OL2009 9-Element SMD Phototransistor Array Features • • • • • • High speed phototransistor OL8110 chips Reference holes for precise mounting Compact size and low cost Also available with mounted reticle Custom design available Single chip placement for high speed applications

phototransistor array

Abstract: MULTI TURN OL2006 phototransistor datasheet ET8001 OL8110 Optolab
Contextual Info: OL2006 6 Element SMD Phototransistor Array Features • • • • • • High speed phototransistor OL8110 chips Reference holes for precise mounting Compact size and low cost Also available with mounted reticle Custom design available Single chip placement for high speed applications

phototransistor array

Abstract: OL8110 edge-detection OL2013 phototransistor datasheet ET8001 Optolab
Contextual Info: OL2013 13 Element SMD Phototransistor Array Features • • • • • • High speed phototransistor OL8110 chips Reference holes for precise mounting Compact size and low cost Also available with mounted reticle Custom design available Single chip placement for high speed applications

phototransistor array

Abstract: phototransistor datasheet ET8001 OL2013 OL8110
Contextual Info: OL2013 13 Element SMD Phototransistor Array Features • • • • • • High speed phototransistor OL8110 chips Reference holes for precise mounting Compact size and low cost Also available with mounted reticle Custom design available Single chip placement for high speed applications

WPT-1CL3H

Abstract: wpt1cl3h Rise time of photo transistor phototransistor array
Contextual Info: Photo Transistor Waitrony Module No.: WPT-1CL3H 1. General Description: WPT-1CL3H is a high sensitivity NPN silicon phototransistor mounted in a 03mm low-cost ceramic package. This small phototransistor is designed for use as low-cost detector array in consumer and industrial applications.

PH101

Contextual Info: SEC PHOTO TRANSISTOR ELECTRON DEVICE PH101 NPN EPITAXIAL DARLINGTON PHOTOTRANSISTOR PHOTO DETECTOR -N E P O C SERIES - DESCRIPTION The PH101 is a miniature NPN sillicon phototransistor having exceptionally stable characteristics and high illuminance sensiti­

Contextual Info: BPW16N Vishay Telefunken Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of

BPW16N

Abstract: CQY36N
Contextual Info: BPW16N Vishay Semiconductors Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of

BPW16N

Abstract: CQY36N
Contextual Info: BPW16N Vishay Telefunken Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of

Contextual Info: SIEMENS SFH320 SFH320F DAYLIGHT FILTER NPN Silicon Phototransistor SMT-TOPLED Package Dimensions in Inches mm FEATURES Maximum Ratings * NPN Silicon Phototransistor Operating & Storage Temperature Hop, Tstg) . -5 5 to +100°C Collector-Emitter Voltage (VCE) . 35 V

Contextual Info: SIEMENS SFH320 SFH320F DAYLIGHT FILTER NPN Silicon Phototransistor SMT-TOPLËD FEATURES • NPN Silicon Phototransistor • Daylight Filter C>ption-SFH320F • Suitable for Vapor-Phase Reflow, Infrared Reflow, Wave Solder Processes • Compatible with Automatic Placement

phototransistor 3F

Abstract: tOSHIBA TMC7 HD74HC139 HD74LS240 TLN103A TPS603A
Contextual Info: APPLICATION NOTE H8/300L SLP Series Connecting a Phototransistor Introduction A phototransistor is connected to the analog input pin, and the results of A/D conversion are displayed on sevensegment LEDs. Target Device H8/38024 Contents 1. Specifications . 2

BPW17

Abstract: ic 8243 BPW17N CQY37N infrared 950nm
Contextual Info: BPW17N Vishay Telefunken Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12° lens. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of

CQY36

Abstract: BPW16N BPW16
Contextual Info: BPW16N Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable

BPW16N

Abstract: CQY 24
Contextual Info: TELEFUNKEN Semiconductors BPW 16 N Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are

8239

Abstract: BPW17 BPW17N CQY37N
Contextual Info: BPW17N Vishay Telefunken Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12° lens. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of

Contextual Info: BPW17N Vishay Telefunken Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12° lens. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of

BPW17N

Abstract: CQY37N
Contextual Info: BPW17N Vishay Semiconductors Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12° lens. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of

8239

Abstract: 8257 ic 8255 phototransistor, 850nm S350P
Contextual Info: S350P Silicon NPN Phototransistor Description S350P is a high sensitive silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center–to–center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable