PHOTOTRANSISTOR 950 NM Search Results

gabellichtschranke

Abstract: GPXY6010 datasheet ic 4060 Fototransistor Q62702-P5214 DSA006333 voltage detector IC
Contextual Info: Gabellichtschranke Slotted Interrupter SFH 9310 Wesentliche Merkmale • Kompaktes Gehäuse • GaAs-IR-Sendediode 950 nm • Si-Fototransistor mit Tageslichtsperrfilter Features • Compact type • GaAs infrared emitter (950 nm) • Silicon phototransistor detector with

Q62702-P5214

Abstract: gabellichtschranke opto 101 9310
Contextual Info: Gabellichtschranke Slotted Interrupter SFH 9310 Wesentliche Merkmale • Kompaktes Gehäuse • GaAs-IR-Sendediode 950 nm • Si-Fototransistor mit Tageslichtsperrfilter Features • Compact type • GaAs infrared emitter (950 nm) • Silicon phototransistor detector with

fototransistor

Abstract: gabellichtschranke Q62702-P5214
Contextual Info: Gabellichtschranke Slotted Interrupter SFH 9310 Wesentliche Merkmale Features • Kompaktes Gehäuse • GaAs-IR-Sendediode 950 nm • Si-Fototransistor mit Tageslichtsperrfilter • Compact type • GaAs infrared emitter (950 nm) • Silicon phototransistor detector with

near IR sensors with daylight filter

Contextual Info: TEST2600 Vishay Semiconductors Silicon NPN Phototransistor Description TEST2600 is a high sensitive silicon NPN epitaxial planar phototransistor in miniature side view plastic package with cylindrical lens. The integrated Daylight filter is matched to IR emitters, λp = 950 nm .

near IR sensors with daylight filter

Abstract: TEST2600 TSSS2600
Contextual Info: TEST2600 Vishay Semiconductors Silicon NPN Phototransistor Description TEST2600 is a high sensitive silicon NPN epitaxial planar phototransistor in miniature side view plastic package with cylindrical lens. The integrated Daylight filter is matched to IR emitters, λp = 950 nm .

Contextual Info: TEST2600 Vishay Semiconductors Silicon NPN Phototransistor Description TEST2600 is a high sensitive silicon NPN epitaxial planar phototransistor in miniature side view plastic package with cylindrical lens. The integrated Daylight filter is matched to IR emitters, λp = 950 nm .

Contextual Info: TEMT3700F Vishay Semiconductors Silicon NPN Phototransistor Description TEMT3700F is a high speed silicon NPN epitaxial planar phototransistor in a miniature PLCC-2 package with integrated IR band pass filter 950 nm . Features • • • • • High sensitivity

TEMT3700F-GS08

Abstract: TEMT3700F-GS18 TSML3710 TSMS3700
Contextual Info: TEMT3700F Vishay Semiconductors Silicon NPN Phototransistor Description TEMT3700F is a high speed silicon NPN epitaxial planar phototransistor in a miniature PLCC-2 package with integrated IR band pass filter 950 nm . Features • • • • • High sensitivity

Contextual Info: TEMT3700F Vishay Semiconductors Silicon NPN Phototransistor Description TEMT3700F is a high speed silicon NPN epitaxial planar phototransistor in a miniature PLCC-2 package with integrated IR band pass filter 950 nm . Features • • • • • • •

near IR sensors with daylight filter

Contextual Info: TEST2600 VISHAY Vishay Semiconductors Silicon NPN Phototransistor Description TEST2600 is a high sensitive silicon NPN epitaxial planar phototransistor in miniature side view plastic package with cylindrical lens. The integrated Daylight filter is matched to IR emitters, λp = 950 nm .

TEMT3700F-GS08

Abstract: TEMT3700F-GS18 TSML3710 TSMS3700
Contextual Info: TEMT3700F VISHAY Vishay Semiconductors Silicon NPN Phototransistor Description TEMT3700F is a high speed silicon NPN epitaxial planar phototransistor in a miniature PLCC-2 package with integrated IR band pass filter 950 nm . Features • • • • • High sensitivity

Contextual Info: TEMT3700F VISHAY Vishay Semiconductors Silicon NPN Phototransistor Description TEMT3700F is a high speed silicon NPN epitaxial planar phototransistor in a miniature PLCC-2 package with integrated IR band pass filter 950 nm . Features • • • • • High sensitivity

opt coupler

Abstract: TCST2202 TCST2103
Contextual Info: Tem ic Semiconductors TCST110. up to TCST230 Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the The operating wavelength is 950 nm. The detector emitting-light sources and the detectors are located face- consists of a phototransistor,

Contextual Info: TCPT1300X01 Vishay Semiconductors Subminiature Dual Channel Transmissiv Sensor with Phototransistor Output Description TCPT1300X01, a transmissive optical sensor SMD including an IR emitter and a Phototransistor detector located face to face with 3 mm gap and 0.3 mm aperture dimension. The operating wavelength is 950 nm.

TCST1030

Abstract: Telefunken Phototransistor
Contextual Info: TCST1030 TELEFUNKEN Semiconductors Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting light sources and the detectors are located face to face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a phototransistor.

TCST1103

Abstract: TCST2202 TCST210 TCST110 TCST1202 TCST1300 TCST2103 TCST230 TCST2300 TCST1103A
Contextual Info: TCST110. up to TCST230. Transmissive Optical Sensor with Phototransistor Output Description The operating wavelength is 950 nm. The detector consists of a phototransistor. This device has a compact construction where the emitting-light sources and the detectors are located faceto-face on the same optical axis.

vemt3700f-gs08

Contextual Info: VEMT3700F Vishay Semiconductors Silicon NPN Phototransistor FEATURES • • • • • • • • • • • • 19032 DESCRIPTION VEMT3700F is a high speed silicon NPN epitaxial planar phototransistor in a miniature PLCC-2 package. The integrated daylight blocking filter is matched to 950 nm

Contextual Info: VEMT3700F Vishay Semiconductors Silicon NPN Phototransistor FEATURES • • • • • • • • • • • • 19032 DESCRIPTION VEMT3700F is a high speed silicon NPN epitaxial planar phototransistor in a miniature PLCC-2 package. The integrated daylight blocking filter is matched to 950 nm

Contextual Info: VEMT3700F Vishay Semiconductors Silicon NPN Phototransistor FEATURES • • • • • • • • • • • • 19032 DESCRIPTION VEMT3700F is a high speed silicon NPN epitaxial planar phototransistor in a miniature PLCC-2 package. The integrated daylight blocking filter is matched to 950 nm

Contextual Info: VEMT3700F Vishay Semiconductors Silicon NPN Phototransistor FEATURES • • • • • • • • • • • • 19032 DESCRIPTION VEMT3700F is a high speed silicon NPN epitaxial planar phototransistor in a miniature PLCC-2 package. The integrated daylight blocking filter is matched to 950 nm

VEMT3700F

Abstract: VSML3710
Contextual Info: VEMT3700F Vishay Semiconductors Silicon NPN Phototransistor FEATURES • • • • • • • • • • • • 19032 DESCRIPTION VEMT3700F is a high speed silicon NPN epitaxial planar phototransistor in a miniature PLCC-2 package. The integrated daylight blocking filter is matched to 950 nm

Telefunken Phototransistor

Abstract: TCST5123
Contextual Info: TCST5123 Transmissive Optical Sensor with Phototransistor Output Description These devices have a compact construction where the emitting-light sources and the detectors are located faceto-face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a phototransistor. Due to the special construction, the depth of the

74HCT14

Abstract: TCUT1200X01
Contextual Info: TCUT1200X01 Vishay Semiconductors Subminiature Dual Channel Transmissiv Sensor with Phototransistor Output Description TCUT1200X01 has a compact construction where the emitter and two detectors are located face to face. The operating wavelength is 950 nm.

Contextual Info: TCUT1200X01 Vishay Semiconductors Subminiature Dual Channel Transmissiv Sensor with Phototransistor Output Description TCUT1200X01 has a compact construction where the emitter and two detectors are located face to face. The operating wavelength is 950 nm.