PHOTODIODE UV 03 Search Results

opa 275

Abstract: JEC 200 JEC1C JEC 400 JEC1B 1bc2
Contextual Info: SiC - Photodiode JEC 1* characteristics : ♦ ♦ ♦ ♦ SiC-Photodiode with integrated filter *-filter option for UV-C, UV-BC, UV-B and UV-A active area 1 mm2 TO 5-package applications : ♦ ♦ ♦ ♦ UV-measurement only control of sterilization lamps

opa 275

Abstract: opa 220 JEC0.1
Contextual Info: SiC - Photodiode JEC 0,3* characteristics : ♦ ♦ ♦ ♦ SiC-Photodiode with integrated filter *-filter option for UV-C, UV-BC, UV-B and UV-A active area 0,22 mm2 TO 5-package applications : ♦ ♦ ♦ ♦ UV-measurement only control of sterilization lamps

opa 275

Abstract: photodiode flame JEC 400 340nm
Contextual Info: SiC - Photodiode JEC 0,1* characteristics : i i i i SiC-Photodiode with integrated filter *-filter option for UV-C, UV-BC, UV-B and UV-A active area 0,055 mm2 TO 5-package applications : i i i i UV-measurement only control of sterilization lamps flame detection

photodiode flame

Contextual Info: SiC - photodiode JEC 1 IS characteristics : ♦ ♦ ♦ ♦ ♦ spectral range 210 . 380 active area 0,965 high UV-responsivity 0,16 TO 18-package photodiode isolated to package applications : ♦ ♦ ♦ UV-measurements only UV-source control flame detection

uv photodiode, GaP

Contextual Info: SiC - quadrant-photodiode JQC 4 characteristics : ♦ ♦ ♦ ♦ ♦ spectral range active area separation gap high UV - response TO 39-package applications : ♦ ♦ ♦ UV-measurement only UV positioning application UV-source control 210 . 380 4x0,965

Contextual Info: UV-Photodiode EPD-365-0/2,5 - preliminary data sheet - characteristics : ♦ ♦ ♦ ♦ GaP-Photodiode with integrated filter spectral range 1% borders 250 . 400 nm active area 4,8 mm2 substitute for JEP 5-400 applications : ♦ ♦ flame detection UV-measurements

JEC 0.1 S

Abstract: JEC 200 jec01s opa 275
Contextual Info: SiC - photodiode JEC 0,1S/JEC 0,1SS characteristics : ♦ ♦ ♦ ♦ applications : ♦ UV-measurement only ♦ UV-source control ♦ flame detection spectral range active area high UV-responsivity TO 18-package 210 . 380 0,055 0,13 nm mm2 A/W maximum ratings:

epigap uv

Contextual Info: Photodiode EPD-365-0-2.5 11.04.2007 Preliminary rev. 03/07 Wavelength Type Technology Case UV Schottky Contact GaP TO-39 + UG-11 filter Description 8,33 Wide bandwidth and high spectral sensitivity in the UV range 245 nm - 400 nm , mounted in hermetically sealed TO-39 package with UG11 UV

1130ns

Contextual Info: Photodiode EPD-365-0-3.6 11.04.2007 Preliminary rev. 03/07 Wavelength Type Technology Case UV Schottky Contact GaP TO-39 + UG-11 filter Description 8,33 Wide bandwidth and high spectral sensitivity in the UV range 245 nm - 400 nm , mounted in hermetically sealed TO-39 package with UG11 UV

Contextual Info: Photodiode EPD-365-0-2.5 11.04.2007 Preliminary rev. 03/07 Wavelength Type Technology Case UV Schottky Contact GaP TO-39 + UG-11 filter Description 8,33 Wide bandwidth and high spectral sensitivity in the UV range 245 nm - 400 nm , mounted in hermetically sealed TO-39 package with UG11 UV

Contextual Info: SiC - photodiode JEC 0,3S/JEC 0,3SS characteristics : ♦ ♦ ♦ ♦ spectral range active area high UV-responsivity TO 18-package applications : ♦ ♦ ♦ UV-measurement only UV-source control flame detection 210 . 380 0,22 0,13 nm mm2 A/W maximum ratings:

JEC1SS

Contextual Info: SiC - photodiode JEC 1S/JEC 1SS characteristics : ♦ ♦ ♦ ♦ spectral range active area high UV-responsivity TO 18-package applications : ♦ ♦ ♦ UV-measurement only UV-source control flame detection 210 . 380 0,965 0,13 nm mm2 A/W maximum ratings:

MA 4E 1245

Contextual Info: SiC - photodiode JEC 4 characteristics : i i i i spectral range active area high UV - response TO 39-package applications : i i i UV-measurement only UV-source control for instance in sterilizers flamedetection 210 . 380 nm 4 mm2 150 mA/W maximum ratings:

JEC1S

Abstract: opa 275
Contextual Info: SiC - photodiode JEC 1SHT characteristics : ♦ ♦ ♦ ♦ ♦ spectral range 210 . 380 nm active area 0,965 mm2 high UV - response 0,16 A/W TO 18-package suitable for operating temperatures up to 150 °C applications : ♦ ♦ ♦ UV-measurement only UV-source control for instance in sterilizers

EPD-440-0

Abstract: EPD-440-0-0
Contextual Info: Photodiode EPD-440-0-0.9 11.04.2007 Preliminary rev. 03/07 Wavelength Type Technology Case UV Schottky Contact GaP TO-46 + UV-glass Description +0,1 Ø 5,31 5,1 -0,1 +0,025 +0,05 -0,05 Ø 4,75 -0,1 2,54 Ø 4,22 Ø 5,33 Ø 0,44 -0,03 +0,03 0,2 -0,025 Cathode

epigap uv

Abstract: UV source 250 nm EPD-280-0-0
Contextual Info: Photodiode EPD-280-0-0.3-2 31.05.2007 Preliminary rev. 03/07 Wavelength Type Technology Case UV-A – UV-C clear UV-glass SiC TO-39 Description ± 0,1 Chip Location Ø9,14 Ø7,62 ± 0,1 8,13 5,90 5,08 ± 0,1 9, 90 ± 0,45 0, 1 ± 0,03 4,1 Anode ± 1,0 Note: housing with diffuse glass window available on request

EPD-440-0/0.9

Abstract: uv photodiode, GaP EPD-440-0 440-nm
Contextual Info: Photodiode EPD-440-0-0.9 11.04.2007 Preliminary rev. 03/07 Wavelength Type Technology Case UV Schottky Contact GaP TO-46 + UV-glass Description +0,1 5,1 -0,1 Ø 5,31 +0,03 +0,025 +0,05 -0,05 Ø 4,75 -0,1 2,54 Ø 4,22 Ø 5,33 Ø 0,44 -0,03 0,2 -0,025 Cathode

uv photodiode, GaP

Abstract: EPD-440-0
Contextual Info: Photodiode EPD-440-0-1.4 6/21/2007 Preliminary rev. 03/07 Wavelength Type Technology Case UV Schottky Contact GaP TO-46 + UV-glass Description +0,1 5,1 -0,1 Ø 5,31 +0,03 +0,025 +0,05 -0,05 Ø 4,75 -0,1 2,54 Ø 4,22 Ø 5,33 Ø 0,44 -0,03 0,2 -0,025 Cathode

jec01s

Contextual Info: SiC - photodiode JEC 0,1SHT characteristics : ♦ ♦ ♦ ♦ ♦ spectral range 210 . 380 nm active area 0,055 mm2 high UV-responsivity 0,13 A/W TO 18-package suitable for operating temperatures up to 150 °C applications : ♦ ♦ ♦ UV-measurements only

uv photodiode, GaP

Abstract: EPD-440-0
Contextual Info: Photodiode EPD-440-0-3.6 11.04.2007 Preliminary rev. 03/07 Wavelength Type Technology Case UV Schottky Contact GaP TO-39 + UV-glass Description Chip Location Ø9,14 Ø7,62 ± 0,1 8,13 5,90 5,08 ± 0,1 9, 90 ± 0,45 0, 1 ± 0,03 3,25 ± 0,1 05 0, Chip Location

JEC 200

Abstract: opa 275
Contextual Info: SiC - photodiode JEC 0,3SHT characteristics : ♦ ♦ ♦ ♦ ♦ spectral range 210 . 380 nm active arrea 0,22 mm2 high UV-responsivity 0,13 A/W TO 18-package suitable for operating temperatures up to 150 °C applications : ♦ ♦ ♦ UV-measurements only

EPD-440-0-2

Abstract: uv photodiode, GaP BURNER EPD-440-0
Contextual Info: Photodiode EPD-440-0-2.5 11.04.2007 Preliminary rev. 03/07 Wavelength Type Technology Case UV Schottky Contact GaP TO-39 + UV-glass Description ± 0,1 Chip Location Ø9,14 Ø7,62 ± 0,1 8,13 5,90 5,08 ± 0,1 9, 90 ± 0,45 0, 1 ± 0,03 3,25 Anode ± 0,05 05

EPD-440-0

Abstract: schottky photodiode
Contextual Info: Photodiode EPD-440-0-3.6 11.04.2007 Preliminary rev. 03/07 Wavelength Type Technology Case UV Schottky Contact GaP TO-39 + UV-glass Description Chip Location Ø9,14 Ø7,62 ± 0,1 8,13 5,90 5,08 ± 0,1 9, 9 ± 0,45 0, 1 ± 0,03 3,25 ± 0,1 Anode ± 1,0 ± 0,05

EPD-440-0

Contextual Info: Photodiode EPD-440-0-2.5 11.04.2007 Preliminary rev. 03/07 Wavelength Type Technology Case UV Schottky Contact GaP TO-39 + UV-glass Description Chip Location Ø9,14 Ø7,62 ± 0,1 8,13 5,90 5,08 ± 0,1 9, 90 ± 0,45 0, 1 ± 0,03 3,25 ± 0,1 Anode ± 1,0 ± 0,05