PHOTODIODE INGAAS NEP Search Results

G9906-01

Abstract: KIRD1075E02 SE-171 photodiode InGaAs NEP
Contextual Info: PHOTODIODE InGaAs PIN photodiode G9906-01 Small package InGaAs PIN photodiode for C-L band G9906-01 is an InGaAs PIN photodiode designed to minimize temperature dependence of the photo sensitivity in the C-L band. It has an active area of φ0.3 mm and is housed in a subminiature package making it ideal for use in smaller modules.

Contextual Info: InGaAs PIN photodiode arrays G12430 series 16/32/46 element InGaAs array for near IR detection The G12430 series is one-dimensional InGaAs PIN photodiode array in a ceramic DIP dual inline package . It can be used to perform simple spectroscopic analysis.

Contextual Info: InGaAs PIN photodiode arrays G12430 series 16/32/46 element InGaAs array for near IR detection The G12430 series is one-dimensional InGaAs PIN photodiode array in a ceramic DIP dual inline package . It can be used to perform simple spectroscopic analysis.

opto 2561

Abstract: 2561 OPTO MXA-256-1 MXA-256-2 photodiode 256 elements PerkinElmer 1700 inGaAs photodiode 1550 array InGaas PIN photodiode, 1550 NEP
Contextual Info: Imaging Telecom Multiplexed InGaAs PIN Photodiode Array MXA-256-1, 2 800-1700 nm Multiplexed InGaAs PIN Photodiode Array Description The MXA-256-X detector is a hybrid focal plane Indium Gallium Arsenide PIN photodiode array with wavelength response ranging

InGaas PIN photodiode, 1550 NEP

Abstract: PerkinElmer 1700 MXA-256-1 MXA-256-2 2561 OPTO photodiode array 1550 nm inGaAs photodiode 1550 array
Contextual Info: Imaging Telecom Multiplexed InGaAs PIN Photodiode Array MXA-256-1, 2 800-1700 nm Multiplexed InGaAs PIN Photodiode Array Description The MXA-256-X detector is a hybrid focal plane Indium Gallium Arsenide PIN photodiode array with wavelength response ranging

G8370-01

Abstract: G8370 G8370-02 G8370-03 G8370-05
Contextual Info: PHOTODIODE InGaAs PIN photodiode G8370 series Large active areas from φ1 to φ5 mm InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.

Contextual Info: PHOTODIODE InGaAs PIN photodiode G8370 series Large active areas from φ1 to φ5 mm InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.

photodiode InGaAs NEP

Abstract: G8370 G8370-01 G8370-02 G8370-03 G8370-05
Contextual Info: PHOTODIODE InGaAs PIN photodiode G8370 series Large active areas from φ1 to φ5 mm InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.

G8370-01

Abstract: G8370 G8370-02 G8370-03 G8370-05
Contextual Info: PHOTODIODE InGaAs PIN photodiode G8370 series Large active areas from φ1 to φ5 mm InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.

G8370-01

Abstract: G8370 G8370-02 G8370-03 G8370-05
Contextual Info: PHOTODIODE InGaAs PIN photodiode G8370 series Large active areas from φ1 to φ5 mm InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.

InGaas PIN photodiode, 1550 NEP

Abstract: InGaAs Photodiode 1550nm photodiode 1550nm nep InGaas PIN photodiode, 1550 sensitivity InGaas APD photodiode, 1550 sensitivity InGaAs APD photodiode 1550 pin photodiode 2 GHz 1550 InGaAs Avalanche Photodiode IAG-Series avalanche 1550nm photodiode 5 Ghz IAG 080
Contextual Info: InGaAs Avalanche Photodiode IAG-Series DESCRIPTION The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at

Contextual Info: PHOTODIODE InGaAs PIN photodiode G8605 series Thermoelectrically cooled NIR near infrared detector with low noise and high-speed response InGaAs PIN photodiodes have small terminal capacitance for high-speed response and also feature high shunt resistance and very low noise.

A3179

Abstract: A3179-01 C1103-04 C4159-02 C4159-03 G8605 G8605-11 G8605-12 G8605-13 G8605-15
Contextual Info: PHOTODIODE InGaAs PIN photodiode G8605 series Thermoelectrically cooled NIR near infrared detector with low noise and high-speed response InGaAs PIN photodiodes have small terminal capacitance for high-speed response and also feature high shunt resistance and very low noise.

C4159-03

Abstract: c4159 e G8605-13 G8605-15 A3179 A3179-01 C1103-04 C4159-02 G8605 G8605-11
Contextual Info: PHOTODIODE InGaAs PIN photodiode G8605 series Thermoelectrically cooled NIR near infrared detector with low noise and high-speed response InGaAs PIN photodiodes have small terminal capacitance for high-speed response and also feature high shunt resistance and very low noise.

Contextual Info: PHOTODIODE InGaAs PIN photodiode G8605 series Thermoelectrically cooled NIR near infrared detector with low noise and high-speed response InGaAs PIN photodiodes have small terminal capacitance for high-speed response and also feature high shunt resistance and very low noise.

Contextual Info: PHOTODIODE InGaAs PIN photodiode G8605 series Thermoelectrically cooled NIR near infrared detector with low noise and high-speed response InGaAs PIN photodiodes have small terminal capacitance for high-speed response and also feature high shunt resistance and very low noise.

Contextual Info: PHOTODIODE InGaAs PIN photodiode G9801 series Receptacle type, 1.3/1.55 µm, 2 GHz G9801 series are high-speed receivers specifically developed for 1.3/1.55 µm band optical fiber communications. These devices incorporate a high-speed, high-sensitivity InGaAs PIN photodiode integrated in a receptacle module. Packages are available with various connectors and

G9801

Contextual Info: PHOTODIODE InGaAs PIN photodiode G9801 series Receptacle type, 1.3/1.55 µm, 2 GHz G9801 series are high-speed receivers specifically developed for 1.3/1.55 µm band optical fiber communications. These devices incorporate a high-speed, high-sensitivity InGaAs PIN photodiode integrated in a receptacle module. Packages are available with various connectors and

IAG 080

Contextual Info: InGaAs Avalanche Photodiode IAG-Series DESCRIPTION The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at

Contextual Info: Photodiode EPD-1300-0-0.5 Preliminary 6/21/2007 rev. 03/07 Wavelength Type Technology Case Infrared Planar InGaAs/InP TO-18 Description InGaAs-Photodiode mounted in TO-18 standard package covered with epoxy. High spectral sensitivity in the infrared range NIR, SWIR .

Contextual Info: PHOTODIODE InGaAs PIN photodiode G8370-81/-82/-83/-85 Low PDL Polarization Dependence Loss InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.

Contextual Info: PHOTODIODE InGaAs PIN photodiode G8370-81/-82/-83/-85 Low PDL Polarization Dependence Loss InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.

Contextual Info: PHOTODIODE InGaAs PIN photodiode G8370-81/-82/-83/-85 Low PDL Polarization Dependence Loss InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.

Contextual Info: PHOTODIODE InGaAs PIN photodiode G8370-81/-82/-83/-85 Low PDL Polarization Dependence Loss InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.