PHOTODIODE ESD SENSITIVITY Search Results

GM250X7R10216

Abstract: ADN2821 ad282 ADN2821ACHIPS-02K ADN2821ACHIPS-05K D3186 TO-CAN photodiode esd sensitivity
Contextual Info: 11.1 Gbps 3.3 V Low Noise, High Gain TIA ADN2821 Preliminary Technical Data FEATURES GENERAL DESCRIPTION Bandwidth: 8 GHz min Input noise current density: 12 pA/√Hz Optical sensitivity: −19 dBm1 Differential transimpedance/linear range: ADN2821_2: 2.0 kΩ/0.20 mA p-p

FIL-3C

Abstract: fil 3c
Contextual Info: Photoconductive Series Planar Diffused Silicon Photodiodes The Photoconductive Detector Series are suitable for high speed and high sensitivity applications. The spectral range extends from 350 to 1100 nm, making these photodiodes ideal for visible and near IR applications,

FIL-100V

Abstract: UDT PIN 10DP UDT 10 DP RSH M 5DPI UDT BNC UDT BNC PIN UDT BNC PIN 8 PIN3CDP pin-10dp
Contextual Info: Photovoltaic Series Planar Diffused Silicon Photodiodes The Photovoltaic Detector series is utilized for applications requiring high sensitivity and moderate response speeds, with an additional sensitivity in the visible-blue region for the blue enhanced series. The spectral

Charge Sensitive Preamplifier Specifications Mode

Abstract: Photodiode and amplifier IC for CD far uv photodiode photodiode chip silicon opa637 UDT Sensors
Contextual Info: Soft X-Ray, Deep UV Enhanced Series Inversion Layer Silicon Photodiodes UDT Sensors’ 1990 R&D 100 award winning X-UV detector series are a unique class of silicon photodiodes designed for additional sensitivity in the X-Ray region of the electromagnetic spectrum without use of any

Contextual Info: 3.2 Gbps, 3.3 V, Low Noise, Transimpedance Amplifier ADN2880 FEATURES GENERAL DESCRIPTION Bandwidth: 2.5 GHz Optical sensitivity: −24.2 dBm 1 Differential transimpedance: 4400 V/A Power dissipation: 70 mW Differential output swing: 260 mV p-p Input overload current: 4.3 mA p-p

CCD linear array

Abstract: RL2048PAG-021 RL1024PAG-021 RL0512PAG-021 fast linear ccd 512 linear array photodiode 2048 elements RL2048PAQ-021 2048 x 1 ccd linear array diode 250nm RL2048P
Contextual Info: CCD P-Series Linear Photodiode Array Imagers 14µm, single output, 512, 1024, 2048 elements Features Description In the P-series linear imager, PerkinElmer has combined the best features of high-sensitivity photodiode array detection and high-speed chargecoupled scanning to offer an uncompromising solution to the increasing

RL1024PAG-021

Abstract: RL2048PAG-021 CCD linear array RL2048P RL0512PAG-021 fast linear ccd 512 photodiode array perkinelmer RL2048PAQ-021 photodiode D11 rl1024P
Contextual Info: CCD P-Series Linear Photodiode Array Imagers 14µm, single output, 512, 1024, 2048 elements Features Description In the P-series linear imager, PerkinElmer has combined the best features of high-sensitivity photodiode array detection and high-speed chargecoupled scanning to offer an uncompromising solution to the increasing

0201X-PBD-002

Abstract: MINDSPEED M02015 GPON InGaAs apd photodiode 2.4 GHz rc servo control circuit InGaAs apd photodiode application note SFP-8472 InGaas PIN photodiode chip TIA AGC application note M02015
Contextual Info: M02015 Low Power CMOS Transimpedance Amplifier with Rx Pwr Mon Output and AGC for Fiber Optic Networks up to 2.5 Gbps The M02015 is a CMOS transimpedance amplifier with AGC. The AGC gives a wide dynamic range of 32 dB. The high transimpedance gain of 9 kΩ ensures good sensitivity.

APD 1300 2,5 GHz

Abstract: TIA AGC application note
Contextual Info: M02016 CMOS Transimpedance Amplifier with AGC for Fiber Optic Networks up to 1.25 Gbps The M02016 is a CMOS transimpedance amplifier with AGC. The AGC gives a wide dynamic range of 35 dB. The high transimpedance gain of 24 kΩ ensures good sensitivity. For optimum system performance, the M02016 die should be mounted with a silicon or InGaAs PIN photo detector

ADN2882

Abstract: ADN2882XCHIPS-WP OC48 5PIN TO56 package
Contextual Info: 4.25 Gbps 3.3V Low Noise Transimpedance Amplifier ADN2882 Preliminary Technical Data FEATURES PRODUCT DESCRIPTION Technology: high performance SiGe Bandwidth: 3.2 GHz minimum Input noise current density: 10 pA√Hz Optical sensitivity: −22 dBm Differential transimpedance: 4000 V/A

04945-000

Abstract: 5PIN TO56 package ADN2880 ADN2880XCHIPS-WP OC48 04-Revision photo diode 10 Gbps
Contextual Info: 3.2 Gbps 3.3 V Low Noise Transimpedance Amplifier ADN2880 Preliminary Technical Data FEATURES PRODUCT DESCRIPTION Technology: high performance SiGe Bandwidth: 2.1GHz minimum Input noise current density: 8 pA√Hz Optical sensitivity: −24 dBm Differential transimpedance: 5000 V/A

InGaAs Epitaxx APD

Abstract: Photodiode apd high sensitivity InGaas APD photodiode, 1550 sensitivity epitaxx apd 10gb datasheet apd epitaxx LC InGaAs avalanche photodiode ghz InGaAs apd photodiode photodiode Avalanche photodiode 40 gb InGaAs 1550 photodiode transimpedance amplifier
Contextual Info: Product Bulletin ERM 578DKX 10 Gb/s High Sensitivity Avalanche Photodiode Optical Receiver Module Preliminary Specifications Conditions unless noted : Temperature = 25°C, λ = 1550 nm, RL = 50Ω, Vdd = +5.7V All specifications without connector. Parameter

Contextual Info: 4.25 Gbps, 3.3 V Low Noise, Transimpedance Amplifier ADN2882 FEATURES GENERAL DESCRIPTION Bandwidth: 3.5 GHz Input noise current density: 8 pA/√Hz Optical sensitivity −22.0 dBm 1 −20.4 dBm 2 Differential transimpedance: 3700 V/A Power dissipation: 80 mW

EMCORE APD

Abstract: avalanche photodiode photodiode Avalanche photodiode APD photodiode 25G 2.5G APD APD 1550 nm bare die avalanche Photodiode 300 nm avalanche photodiode oc48 1550 fiber 2.5 bare die receiver avalanche 1550 fiber 2.5
Contextual Info: PRELIMINARY DATASHEET | DECEMBER 30, 2005 2.5 Gb/s Avalanche Photodiode Bare Die The 2.5 Gb/s avalanche photodiode device features high responsivity, low dark current, and facilitates designs that can achieve -34 dBm receiver sensitivity. Target applications include SONET OC-48, SDH

8GHz transceiver specification

Abstract: ADN2821 ADN2821XCHIP-02KWP ADN2821XCHIP-05KWP ADN2821XCHIP-10KWP 10GHz 5pin package photo diode stm-64 5pin
Contextual Info: 11.1 Gbps 3.3V Transimpedance Amplifier ADN2821 Preliminary Technical Data FEATURES PRODUCT DESCRIPTION Bandwidth: 8 GHz min Input Noise Current Density: 12pA√Hz Optical sensitivity: −19 dBm1 Differential Transimpedance /Linear Range: ADN2821_2: 2.0 kΩ/0.20 mA p-p

ADN2821XCHIP-10KWP

Abstract: ADN2821 ADN2821XCHIP-02KWP ADN2821XCHIP-05KWP 8GHz transceiver specification
Contextual Info: 11.1 Gbps 3.3V Transimpedance Amplifier ADN2821 Preliminary Technical Data FEATURES PRODUCT DESCRIPTION Bandwidth: 8 GHz min Input Noise Current Density: 12pA√Hz Optical sensitivity: −19 dBm1 Differential Transimpedance /Linear Range: ADN2821_2: 2.0 kΩ/0.20 mA p-p

Contextual Info: T1116P Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 2.97 x 2.97 x 0.28 • Radiant sensitive area (in mm2): 7.7 A • High photo sensitivity • High radiant sensitivity

T1116P

Abstract: FVOV6870 MIL-HDBK-263 Photodiode vishay
Contextual Info: T1116P Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 2.97 x 2.97 x 0.28 • Radiant sensitive area (in mm2): 7.7 A • High photo sensitivity • High radiant sensitivity

81121

Abstract: FVOV6870 MIL-HDBK-263 T1120P6
Contextual Info: T1120P6 Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 2.37 x 2.37 x 0.28 • Radiant sensitive area (in mm2): 4.4 • High photo sensitivity • High radiant sensitivity

Contextual Info: T1120P Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 2.37 x 2.37 x 0.28 • Radiant sensitive area (in mm2): 4.4 • High photo sensitivity • High radiant sensitivity

81121

Abstract: FVOV6870 MIL-HDBK-263 81-121
Contextual Info: T1120P Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 2.37 x 2.37 x 0.28 • Radiant sensitive area (in mm2): 4.4 • High photo sensitivity • High radiant sensitivity

MINDSPEED M02015

Abstract: 0201X-PBD-001
Contextual Info: M02015 Low Power CMOS Transimpedance Amplifier with AGC for Fiber Optic Networks up to 2.5 Gbps The M02015 is a CMOS transimpedance amplifier with AGC. The AGC gives a wide dynamic range of 32 dB. The high transimpedance gain of 9 kΩ ensures good sensitivity.

T1670P

Abstract: mhz disco FVOV6870 MIL-HDBK-263 photodiode CIE eye response
Contextual Info: T1670P Vishay Semiconductors Silicon PIN Photodiode FEATURES • • • • • • • • • • • • A 21667 DESCRIPTION T1670P ambient light sensor chip is a PIN photodiode with 0.27 mm2 sensitive area, high speed and high photo sensitivity. It is sensitive to visible light much like the human

Contextual Info: ANALOG DEVICES FEATURES Low Cost, W ide Bandwidth, Low Noise Bandwidth: 240 MHz Pulse W idth Modulation: 500 ps Rise Tim e/Fall Time: 1.5 ns Input Current Noise: 2.0 pA/VHz @ 100 MHz Total Input RMS Noise: 20 nA to 100 MHz W ide Dynamic Range Optical Sensitivity: -3 6 dBm @ 155.52 Mbps