PHOTODIODE AVALANCHE PHOTODIODE APD FOR POWER G Search Results

APD 1550 nm bare die

Abstract: EMCORE APD
Contextual Info: G1013-406, 2.5G Avalanche Photodiode APD Bare Die DATASHEET | MAY 2015 FIBER OPTICS EMCORE’s PS-G1013-406 2.5G Avalanche Photodiode (APD), Top Illuminated APD Chip is designed for GPON ONU and 2.6 Gb/s applications. It has high responsivity and low capacitance with low noise equivalent power and is ideally

M6017

Abstract: for APD bias high-voltage
Contextual Info: MODULE Power supply for APD M6017 Power supply module for APD M6017 is a high-voltage power supply module that generates a high voltage DC voltage necessary to operate an APD (avalanche photodiode) with an adequate gain. By supplying an external control voltage (0 to +3 V) or connecting a variable resistor, M6017 provides an APD with a bias

Photodiode apd RSSI

Abstract: MAXIM 3840 AN4463 APP4463 DS1865 DS1875 4463 B
Contextual Info: Maxim > App Notes > Digital Potentiometers Optoelectronics Power-Supply Circuits Keywords: DS1875, optical, fiber, controller, SFP, DS1865, APD, photodiode Sep 24, 2009 APPLICATION NOTE 4463 Compensating for the Nonlinear APD Response Abstract: Optical laser modules require compensation for the nonlinear response of the APD avalanche

16-TQFN-EP

Abstract: GRM155R71C104KA88 GRM155R61A105KE15 BAT46W DIODE 100V BAT46W-7-F GCM21BR72A104KA37L GRM155R71E103KA01D GCM21BR ME3220-472MLB murata 0402 footprint
Contextual Info: Maxim > App Notes > Power-Supply Circuits Keywords: Avalanche Photo Diode bias, boost converter Mar 31, 2009 APPLICATION NOTE 4374 Power Supply and Accurate Current Monitor for Avalanche Photodiode APD Biasing Applications By: Subbarami Reddy Abstract: This reference design presents a circuit for addressing the power-supply and current-monitoring

Contextual Info: DS3922 High-Speed Current Mirror and Integrated FETs for DC-DC Controller General Description The DS3922 high-speed current mirror integrates highvoltage devices necessary for monitoring the burst mode receive power signal in avalanche photodiode APD biasing and OLT applications. The device has two small and

10G APD chip

Abstract: PSS-AD230 Photodiode apd amplifier apd model 10G APD photodiode Avalanche photodiode avalanche photodiode receiver AD230-2.3G-TO5 apd 850 nm 130 ps PSS-AD230-2
Contextual Info: Pacific Silicon Sensor Inc. Data Sheet PSS-AD230-2.3G-TO5 OPTICAL DATA RECEIVER USING AN AVALANCHE PHOTODIODE AND A 2.3 GHz AMPLIFIER PSS-AD230-2.3G-TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a

10G APD chip

Abstract: Photodiode apd amplifier 500 watts amplifier schematic diagram PSS-AD500-1 10G APD photodiode Avalanche photodiode APD photodiode Avalanche photodiode APD FOR POWER avalanche photodiode receiver AD500 PSS-AD500
Contextual Info: Pacific Silicon Sensor Inc. Data Sheet PSS-AD500-1.3G-TO5 OPTICAL DATA RECEIVER USING AN AVALANCHE PHOTODIODE AND A 1.3 GHz AMPLIFIER PSS-AD500-1.3G-TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a

10G APD chip

Abstract: westlake capacitors 10G APD photodiode Avalanche photodiode Photodiode apd amplifier avalanche photodiode bias rise time avalanche photodiode avalanche photodiode photodiode Avalanche photodiode APD 500 watts amplifier schematic diagram
Contextual Info: DATA SHEET PSS-AD500-2.3G-TO5 OPTICAL DATA RECEIVER USING AN AVALANCHE PHOTODIODE AND A 2.3 GHz AMPLIFIER PSS-AD-500-2.3G-TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a hermetically sealed TO5

Contextual Info: 80 & 200 m InGaAs Avalanche Photodiode Preamplifier Module MICROELECTRONICS 264-339757-VAR Description CMC Electronics’ 264-339757-VAR are using a low noise InGaAs APD with an ionization ratio of 0.2 with a GaAs FET input transimpedance amplifier in a 12-lead TO-8 package. The

InGaAs Epitaxx APD

Abstract: EPITAXX erm EPITAXX erm 577 apd epitaxx EPITAXX InGaAs apd photodiode InGaAs photodiode 100ps 995Mv ERM APD avalanche photodiode receiver
Contextual Info: Product Bulletin ERM 577 2.5 Gb/s High Gain Avalanche Photodiode Optical Receiver Modules Specifications Conditions unless noted : Temperature = 25°C, λ = 1550 nm, RL = 50Ω, Vss = -5.2V All specifications without connector. Parameter Measurement Conditions

lidar apd model

Abstract: APD, laser, range, finder photodiode pin alpha particles APD bias gain C30902S geiger apd InGaAs apd photodiode Photodiode apd high sensitivity germanium diode equivalent PerkinElmer Avalanche Photodiode
Contextual Info: !"#$%& Avalanche Photodiodes: A User's Guide Abstract Avalanche photodiode detectors have and will continue to be used in many diverse applications such as laser range finders and photon correlation studies. This paper discusses APD structures, critical performance parameters and the excess noise factor.

Contextual Info: Detectors Silicon Geiger Mode Avalanche Photodiode Description The SAP500-Series is based on a “reach-through” structure for excellent quantum efficiency, extremely low noise and bulk dark current and high gain. They are intended for ultra-low light level applications. This APD can be used

photodiode InGaAs NEP

Contextual Info: Receiver TIA with TEC MICROELECTRONICS 200 MHz , 200 m InGaAs APD Avalanche Photodiode 264-339769-101 Description CMC Electronics’ 264-339769-101 is using a low noise InGaAs APD with an ionization ratio of 0.2 with a GaAs FET input transimpedance amplifier

Contextual Info: Detectors Silicon Geiger Mode Avalanche Photodiode Description The SAP500-Series is based on a “reach-through” structure for excellent quantum efficiency, extremely low noise and bulk dark current and high gain. They are intended for ultra-low light level applications. This APD can be used

photodiode preamplifier

Abstract: Si apd photodiode APD bias gain photodiode Avalanche photodiode APD Photodiode cost sheet 25XV APD50 avalanche photodiode Photodiode apd amplifier SILICON APD Pre-Amplifier
Contextual Info: DATA SHEET APD50 APD AVALANCHE PHOTODIODE PREAMPLIFIER A Si avalanche photodiode and low noise preamplifier module. A field effect transistor input stage ensures low HF noise and wide bandwidth. The bias voltage supply has temperature compensation to maintain the APD. gain constant.

Contextual Info: Silicon Geiger Mode Avalanche Photodiode DESCRIPTION The SAP500-Series is based on a “reach-through” structure for excellent quantum efficiency, extremely low noise and bulk dark current and high gain. They are intended for ultra-low light level applications. This APD can be used in

EMCORE APD

Abstract: avalanche photodiode photodiode Avalanche photodiode APD photodiode 25G 2.5G APD APD 1550 nm bare die avalanche Photodiode 300 nm avalanche photodiode oc48 1550 fiber 2.5 bare die receiver avalanche 1550 fiber 2.5
Contextual Info: PRELIMINARY DATASHEET | DECEMBER 30, 2005 2.5 Gb/s Avalanche Photodiode Bare Die The 2.5 Gb/s avalanche photodiode device features high responsivity, low dark current, and facilitates designs that can achieve -34 dBm receiver sensitivity. Target applications include SONET OC-48, SDH

SILICON APD Pre-Amplifier

Contextual Info: Silicon APD Avalanche Photodiode on TEC, Preamplifier Modules MICROELECTRONICS 264-339795-VAR Description CMC Electronics’ 264-339795 Series are using a silicon reach through APD with a GaAs FET input transimpedance amplifier in a 12-lead TO-8 package. The amplifier internal

photodiode 1550nm nep

Contextual Info: InGaAs Avalanche Photodiode on TEC, Preamplifier Modules MICROELECTRONICS 264-339759-VAR Description CMC Electronics’ 264-339759 Series are using either a InGaAs APD with an ionization ratio of 0.2 or a Silion APD with an ionization ratio of 0.02. The APD is coupled to a Gasfet input

FU-319SPA-CV6

Abstract: 319SPACV6 mitsubishi APD InGaAs apd photodiode InGaAs APD Pre-Amplifier STM-16 APD, applications, bias supply photodiode Avalanche photodiode APD FOR POWER mitsubishi avalanche photodiode ingaas ghz
Contextual Info: MITSUBISHI OPTICAL DEVICES FU-319SPA-CV6 InGaAs APD PREAMP MODULE FOR THE 1.31 µm AND 1.55 µm WAVELENGTH RANGE DESCRIPTION FU-319SPA-CV6 is InGaAs avalanche photodiode module with GaAs preamplifier, designed for use in high-speed, long haul optical communication systems.

photodiode Avalanche photodiode

Abstract: InGaAs apd photodiode GaAs apd photodiode InGaAs apd photodiode application note FU-319SPA-CV6 459b STM-16 TZ7-99-459B mitsubishi APD APD, applications, bias supply
Contextual Info: TZ7-99-459B 2/4 MITSUBISHI (OPTICAL DEVICES) FU-319SPA-CV6 InGaAs APD PREAMP MODULE FOR THE 1.31 µm AND 1.55 µm WAVELENGTH RANGE DESCRIPTION FU-319SPA-CV6 is InGaAs avalanche photodiode module with GaAs preamplifier, designed for use in high-speed, long haul optical communication systems.

10G APD chip

Abstract: 10G APD EMCORE APD 10G APD lens APD 10G 10G bare die APD 1550 nm bare die avalanche photodiode ghz OC192 avalanche photodiode avalanche photodiode
Contextual Info: PRELIMINARY DATASHEET | MAY 5, 2004 10 Gb/s Avalanche Photodiode Bare Die The 10 Gb/s avalanche photodiode chip incorporates an integrated offset lens and can achieve a gain bandwidth product of > 100 GHz. Target applications include SONET OC-192, SDH STM-64, 10 Gigabit

InGaAs apd photodiode

Abstract: photodiode preamplifier AGC 55nm photodiode Avalanche photodiode FU-319SPA-C6 FU-319SPP-C6 STM-16 mitsubishi fu 1.31 ber
Contextual Info: MITSUBISHI OPTICAL DEVICES FU-319SPA-C6 InGaAs APD PREAMP MODULE FOR THE 1.31 iim AND 1.55 |im WAVELENGTH RANGE DESCRIPTION FU-319SPP-C6 is InGaAs avalanche photodiode module with GaAs preamplifier, designed for use in high-speed, long haul optical communication

InGaAs apd photodiode

Abstract: photodiode Avalanche photodiode photodiode preamplifier AGC APD, applications, power supply APD Ghz FU-319SPA-C6 FU-319SPP-C6 STM-16 mitsubishi APD APD for fiber test
Contextual Info: MITSUBISHI OPTICAL DEVICES FU-319SPA-C6 InGaAs APD PREAMP MODULE FOR THE 1.31 µm AND 1.55 µm WAVELENGTH RANGE DESCRIPTION FU-319SPP-C6 is InGaAs avalanche photodiode module with GaAs preamplifier, designed for use in high-speed, long haul optical communication