PHOTODIODE ARRAY 2D Search Results

Contextual Info: Patent Pending PHOTODIODE Si photodiode array S8593 2-D photodiode array with low cross-talk S8593 is a 2-D Si photodiode array formed by micro-machining techniques to provide exceptionally low cross-talk. Patent pending Features Applications l Low cross-talk

9 ELEMENT photoDIODE ARRAY

Abstract: 16 Photodiode-Array KMPD1064E01 S8593 SE-171 Photodiode Array 2d photodiode array spot light size photodiode 046b1
Contextual Info: Patent Pending PHOTODIODE Si photodiode array S8593 2-D photodiode array with low cross-talk S8593 is a 2-D Si photodiode array formed by micro-machining techniques to provide exceptionally low cross-talk. Patent pending Features Applications l Low cross-talk

PHOTODIODE current voltage amplifier array

Abstract: PCD80 Photodiode Array 2d Photodiode Array 8850-080-170SD C4675 C4675-102 C4675-103 C4675-302 8850-080-170L
Contextual Info: PHOTODIODE 16 x 16 element photodiode array detector C4675 series 2-D detector using 256-element photodiode with visible sensitivity C4675 series is a two-dimensional detector using a 16 × 16 256 element Si PIN photodiode array that has high sensitivity in the visible range.

Contextual Info: PHOTODIODE 16 x 16 element Si PIN photodiode array S3805 For high-speed 2D photometry by parallel readout S3805 is a 16 × 16 element PIN photodiode array developed for 2D photometry. Each element is closely arranged to provide a high effective area ratio. The entire array is mounted on an easy-to-use PC board. The output from each element can be read out in parallel or randomly, thus

16 Photodiode-Array

Abstract: PIN-Photodiode-Array KMPD1011E04 S3805 SE-171 Photodiode Array 2d 1BW semiconductor Photodiode Array 32 element
Contextual Info: PHOTODIODE 16 x 16 element Si PIN photodiode array S3805 For high-speed 2D photometry by parallel readout S3805 is a 16 × 16 element PIN photodiode array developed for 2D photometry. Each element is closely arranged to provide a high effective area ratio. The entire array is mounted on an easy-to-use PC board. The output from each element can be read out in parallel or randomly, thus

silicon photodiode array

Abstract: PIN photodiode crosstalk PIN-Photodiode-Array 16 Photodiode-Array Photodiode-Array PIN photodiode A/W 850nm 480nm detection IR photodiode array Photodiode Array 2d Photodiode Array
Contextual Info: SCA-MA256ESP Silicon PIN Photodiode Array P r e lim inar y Da ta She e t Description The SCA-MA256ESP is a back-illuminated silicon Array Configuration photodiode array module for use in applications where peak sensitivity from 480nm to 800nm is required.

photodiode InGaAs NEP

Contextual Info: Description The MXA-256-X detector is a hybrid focal plane Indium Gallium Arsenide PIN photodiode array with wavelength response ranging from 800 nm to 1700 Multiplexed InGaAs PIN Photodiode Array MXA-256-X 800 - 1700 nm nm. The array has 256 elements IN A

IR photodiode sensor

Abstract: Photodiode Array linear C2334 linear array photodiode element silicon linear photodiode array photodiode linear array 256 C4351 silicon photodiode array Photodiode Array 2d Linear Image sensor IC
Contextual Info: Photodiode Arrays/Linear Image Sensors 16-ELEMENT SILICON PHOTODIODE ARRAY S5668 SERIES For various measuring purpose This photodiode consists of 16 elem ents of Silicon Photodiode having active area of 1.175mm (width X 2.0mm (height) with 1.575mm pitch. This diode is

SCA-CA64ES

Abstract: PIN-Photodiode-Array photodiode array Photodiode Array 2d Photodiode-Array Semicoa "PIN photodiode" "crosstalk" PIN photodiode 850 nm scintillator
Contextual Info: SCA-CA64ES Silicon PIN Photodiode Array P r e lim inar y Da ta She e t Description The SCA-CA64ES is a back-illuminated silicon photodiode Array Configuration array for use in applications where peak sensitivity from 480nm to 800nm is required. The ultra low cross talk between cells enhances photon

Photodiode Array 2d

Abstract: 16 Photodiode-Array Photodiode-Array PIN photodiode 850nm PIN-Photodiode-Array with scintillator PIN photodiode chip 850nm photodiode 850nm nep Semicoa "PIN photodiode" "crosstalk"
Contextual Info: SCA-CA256ES Silicon PIN Photodiode Array P r e lim inar y Da ta She e t Description The SCA-CA256ES is a back-illuminated silicon photodiode Array Configuration array for use in applications where peak sensitivity from 480nm to 800nm is required. The ultra low cross talk between cells enhances photon

Photodiode-Array

Abstract: PIN-Photodiode-Array Photodiode Array 2d 16 Photodiode-Array SCA-CA512ES silicon photodiode array Silicon Photodiode Chip 480nm detection photodiode array PIN photodiode chip
Contextual Info: SCA-CA512ES Silicon PIN Photodiode Array P r e lim inar y Da ta She e t Description The SCA-CA512ES is a back-illuminated silicon photodiode Array Configuration array for use in applications where peak sensitivity from 480nm to 800nm is required. The ultra low cross talk between cells enhances photon

Photodiode Array 2d

Abstract: PIN-Photodiode-Array with scintillator PIN-Photodiode-Array Photodiode-Array silicon photodiode array SCA-CA25ES 480nm detection PIN photodiode crosstalk
Contextual Info: SCA-CA25ES Silicon PIN Photodiode Array P r e lim inar y Da ta She e t Description The SCA-CA25ES is a back-illuminated silicon photodiode Array Configuration array for use in applications where peak sensitivity from 480nm to 800nm is required. The ultra low cross talk between cells enhances photon

Semicoa "PIN photodiode" "crosstalk"

Abstract: 480nm detection Photodiode Array 2d
Contextual Info: SCA-CA256ES Silicon PIN Photodiode Array P r e lim inar y Da ta She e t Description The SCA-CA256ES is a back-illuminated silicon photodiode Array Configuration array for use in applications where peak sensitivity from 480nm to 800nm is required. The ultra low cross talk between cells enhances photon

S7585

Abstract: 16 Photodiode-Array KMPD1038E01 SE-171 9 ELEMENT photoDIODE ARRAY Photodiode Array Photodiode Array 2d
Contextual Info: PHOTODIODE 5 x 5 element Si PIN photodiode array S7585 For simple 2-dimensional photometry Features Applications l 2-D array of 5 × 5 element l Active area per element: 1.3 × 1.3 mm l Element pitch center to center spacing : 1.5 mm (X, Y) l 28-pin DIP for easy use

RL2048dag

Abstract: RETICON RL 1024 STR 6656 RETICON RL0512DAG011 RL0512DKQ RL0512DAG RL2048DAG011 rl1024dag RL1024DAG-011
Contextual Info: m T T 'r /V M l ¥ E T CI O N PI J ^ E G z G D Series Linear Family R Charge-Coupled Photodiode Array Introduction _ EG&G Reticon’s D Series image sensors are high-speed, self-scanned, charge-coupled photodiode CCPD arrays. The D Series Family, consisting of the STANDARD-D, VALU E­

Q62702-K0244

Abstract: k0244 KOM2108 diode bzw 06
Contextual Info: KOM 2108 KOM 2108 feo06868 NEU: 5 x 5-Silizium-PIN-Fotodiodenarray NEW: 5 × 5 Silicon PIN Photodiode Array Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features ● Geeignet im Bereich des sichtbaren Lichts

IC TTL 7404

Abstract: RETICON ccd
Contextual Info: Il ^ 1 -II E G r G R E a LT IC - _ O D Series Linear Family N Charge-Coupled j Photodiode Array Introduction _ EG&G Reticon’s D Series im age sensors are high-speed, self-scanned, charge-coupled photodiode C CPD arrays. The D Series Fam ily, consisting o f th e STAN D ARD -D , VALUED, FAST-D, and LO LIG H T-D im age sensors, allow s the

Contextual Info: Photodiode Arrays/Linear Image Sensors 16-ELEMENT Si PHOTODIODE ARRAY S5668 SERIES For various measuring purpose T h is p h o to d io d e c o n s is ts o f 16 e le m e n ts o f S i P h o to d io d e h a v in g a c tiv e a re a o f 1 .1 7 5 m m (w id th X 2 .0 m m (h e ig h t) w ith 1 .5 7 5 m m p itc h . T h is d io d e is s p e c ia lly

Q62702-K0244

Abstract: Diode LT 443
Contextual Info: SIEMENS KOM 2108 NEU: 5 x 5-Silizium-PIN-Fotodiodenarray NEW: 5 x 5 Silicon PIN Photodiode Array E p oxy re s in tra n s p a re n t E le c tro d e s S u rfa c e m e ta lliz e d al th e edges, Au Ti m ir \ 1 110 9 8 7 6 5 •■■■■■I 1920 21 22 23 24 25

Sensors PSD

Contextual Info: Module products 1 Mini-spectrometers 1-1 1-2 1-3 1-4 1-5 1-6 1-7 Hamamatsu technologies Structure Characteristics Operation mode Evaluation software New approaches Applications 2 MPPC modules 2-1 2-2 2-3 2-4 2-5 Features How to use Characteristics New approaches

Light Detector laser

Abstract: short distance measurement ir infrared diode
Contextual Info: Opto-semiconductors Condensed Catalog HAMAMATSU PHOTONICS K.K. Our unique photonics technology delivers highly sophisticated opto-semiconductors with high-sensitivity and high-speed response. Hamamatsu Photonics has been at the cutting edge of photonics technology for 60 years. In that

U1520 diode

Abstract: KAI-1020M u1520 KAI-1020CM Kodak KAI-1020 Color Filter Array CFA transistor U1520
Contextual Info: IMAGE SENSOR SOLUTIONS DEVICE PERFORMANCE SPECIFICATION KODAK KAI-1020 Image Sensor 1000 H x 1000 (V) Interline Transfer Progressive Scan CCD January 16, 2004 Revision 4.1 KAI-1020 Rev 4.1 • www.kodak.com/go/imagers 585-722-4385 imagers@kodak.com IMAGE SENSOR SOLUTIONS

KAI-1020CM

Abstract: KAI-1020M ccd board Circuit Schematic Diagram Electronic LM337 u1520 JESD22 KAI-1020 U1520 diode Kodak KAI-1020 LAT1032E
Contextual Info: IMAGE SENSOR SOLUTIONS DEVICE PERFORMANCE SPECIFICATION KODAK KAI-1020 Image Sensor 1000 H x 1000 (V) Interline Transfer Progressive Scan CCD October 1, 2002 Revision 4 KAI-1020 Rev 4 • www.kodak.com/go/imagers 585-722-4385 imagers@kodak.com IMAGE SENSOR SOLUTIONS

C9750

Abstract: C10990 S11059-78HT S11154-01CT S10604
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