PHOTODIODE AMPLIFIER Search Results

Contextual Info: PHOTODIODE Photodiode array with amplifier S8865-256, S8865-256G Photodiode array combined with signal processing circuit chip S8865-256 and S8865-256G are Si photodiode arrays combined with a signal processing circuit chip. The signal processing circuit chip is formed

S8865-256G

Contextual Info: PHOTODIODE Photodiode array with amplifier S8865-256, S8865-256G Photodiode array combined with signal processing circuit chip S8865-256 and S8865-256G are Si photodiode arrays combined with a signal processing circuit chip. The signal processing circuit chip is formed

Contextual Info: PHOTODIODE Si photodiode with preamp S8745, S8746 Photodiode and preamp integrated with feedback resistance and capacitance S8745, S8746 are low-noise light sensors consisting of a large area Si photodiode, op amp, and feedback resistance and capacitance, all

S8745

Abstract: S8746
Contextual Info: PHOTODIODE Si photodiode with preamp S8745, S8746 Photodiode and preamp integrated with feedback resistance and capacitance S8745, S8746 are low-noise light sensors consisting of a large area Si photodiode, op amp, and feedback resistance and capacitance, all

650NM photodiode

Abstract: LOG100 photodiode 650nm nep photodiode amplifier REF200
Contextual Info: OPT301 FPO 70% INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT301 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The

photodiode 650nm nep

Abstract: LOG100 OPT301 resistor1M REF200 OPT301M 650NM photodiode 650NM photodetector opt301s 2N2222 curve
Contextual Info: OPT301 FPO 70% INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT301 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The

S8745-01

Abstract: S8746-01
Contextual Info: PHOTODIODE Si photodiode with preamp S8745-01, S8746-01 Photodiode and preamp integrated with feedback resistance and capacitance S8745-01, S8746-01 are low-noise sensors consisting of Si photodiode, op amp, and feedback resistance and capacitance, all integrated into a

LOG100

Contextual Info: OPT301 FPO 70% INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT301 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The

LOG100

Contextual Info: OPT301 FPO 70% INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT301 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The

S4111

Abstract: S4111-16Q S4111-16R S4111-35Q S4111-46Q S4114-35Q S4114-46Q Photodiode Array 32 element
Contextual Info: PHOTODIODE Si photodiode array S4111/S4114 series 16, 35, 46 element Si photodiode array for UV to NIR S4111/S4114 series are Si photodiode linear array mounted in ceramic DIPs Dual Inline Packages . These photodiode arrays are primarily developed for low-light-level detection such as spectrophotometry, and cover a wide spectral range from UV to near infrared light. Since all

LOG100

Abstract: OPT209 OPT209P REF200 650NM photodiode 1232B INA106 equivalent
Contextual Info: OPT209 FPO FPO 70% PHOTODIODE WITH ON-CHIP AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT209 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The

CTP20

Abstract: photodiode linear array
Contextual Info: PHOTODIODE Si photodiode array S4111/S4114 series 16, 35, 46 element Si photodiode array for UV to NIR S4111/S4114 series are Si photodiode linear array mounted in ceramic DIPs Dual Inline Packages . These photodiode arrays are primarily developed for low-light-level detection such as spectrophotometry, and cover a wide spectral range from UV to near infrared light. Since all

Contextual Info: PHOTODIODE Si photodiode array S4111/S4114 series 16, 35, 46 element Si photodiode array for UV to NIR S4111/S4114 series are Si photodiode linear array mounted in ceramic DIPs Dual Inline Packages . These photodiode arrays are primarily developed for low-light-level detection such as spectrophotometry, and cover a wide spectral range from UV to near infrared light. Since all

TO8 socket

Contextual Info: MODULE Photosensor amplifier C8366 Current-to-voltage conversion amplifier for high-speed Si PIN photodiode Features Applications l Wide band l High-speed photometry DC to 100 MHz Typ. at -3 dB; varied by the photodiode used l Laser monitors l Easy photodiode connection

Contextual Info: B U R R - BRO W N 0PT2Q1 INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION • PHOTODIODE SIZE: 0.090 X 0.090 inch 2.29 x 2.29mm The OPT201 is an opto-electronic integrated circuit containing a photodiode and transim pedance amplifier on a single dielectrically isolated chip. The

Contextual Info: PHOTODIODE Si photodiode with preamp S8785 series Large area photodiode integrated with op amp and TE-cooler S8785 series is a thermoelectrically cooled Si photodiode with preamp developed for low-light-level detection. A large area photodiode, op amp, TE-cooler and feedback resistor 10 GΩ are integrated into a single package. A thermistor is also included in the same package for temperature

Contextual Info: PHOTODIODE Si photodiode with preamp S8785 series Large area photodiode integrated with op amp and TE-cooler S8785 series is a thermoelectrically cooled Si photodiode with preamp developed for low-light-level detection. A large area photodiode, op amp, TE-cooler and feedback resistor 10 GΩ are integrated into a single package. A thermistor is also included in the same package for temperature

S8785

Abstract: S8785-01 S8785-02 gw 340
Contextual Info: PHOTODIODE Si photodiode with preamp S8785 series Large area photodiode integrated with op amp and TE-cooler S8785 series is a thermoelectrically cooled Si photodiode with preamp developed for low-light-level detection. A large area photodiode, op amp, TE-cooler and feedback resistor 10 GΩ are integrated into a single package. A thermistor is also included in the same package for temperature

C30919E

Abstract: avalanche photodiode bias photodiode amplifier rise time avalanche photodiode
Contextual Info: JJ^EG sG CANADA LTD. Optoelectronics Division Formerly ItGJl Effective January 1,1991 tro :ics Photodiode C30919E DATA SHEET U Photodiode-Preamplifier Module Completely Hybridized Temperature-Compensated Silicone Avalanche Photodiode-Preamplifier Module

sensitivity dB photodiode pin

Abstract: C4890 S5791 pin photodiode 10 ghz rise time avalanche photodiode
Contextual Info: PHOTODIODE PIN photodiode amplifier C4890 Wide bandwidth amplifier 1.5 GHz, 20 dB C4890 wide-band amplifier, when connected to a high-speed PIN photodiode (S5791, S5972, S5973, etc.) converts optical signals at a maximum of 1.5 GHz into voltage outputs with exceptionally low distortion and 20 dB gain.

s4114 driver

Abstract: Photodiode Array 32 element C9004
Contextual Info: Si photodiode array S4111/S4114 series 16, 35, 46 element Si photodiode array for UV to NIR S4111/S4114 series are Si photodiode linear array mounted in ceramic DIPs Dual Inline Packages . These photodiode arrays are primarily developed for low-light-level detection such as spectrophotometry, and cover a wide spectral range from

S9269

Abstract: S9270
Contextual Info: PHOTODIODE Si photodiode with preamp S9269, S9270 Photodiode and preamp integrated with feedback resistance and capacitance S9269 and S9270 are low-noise photosensors consisting of a Si photodiode, op amp, and feedback resistance and capacitance, all integrated into a ceramic package with a surface size equal to our standard ceramic packages. These photosensors are ideal for a wide

Contextual Info: PHOTODIODE Si photodiode S2281 series Si photodiode with BNC connector S2281 series is Si photodiodes sealed in a metal package with a BNC connector. This configuration allows easy connection to Hamamatsu C9329 photosensor amplifier S2281-01 has a large terminal capacitance which may cause a gain peaking to occur when C9329 is used with the

Ge dual photodiode

Abstract: AMIS-732128 AMIS-732256 AMIS-732512 high frequency linear cmos IMAGE SENSOR linear uv photodiode array Photodiode Array linear linear array photodiode element
Contextual Info: AMIS-732128, AMIS-732256, AMIS-732512 Data Sheet 50µm-pitch Wide Aperture Spectroscopic Photodiode Arrays 1.0 Description AMI Semiconductor’s WSN series is a family of self-scanning photodiode solid-state linear imaging arrays. These photodiode sensors