PHOTODIODE 4 CHANNEL ARRAY Search Results

GaAs photodiode Emcore

Contextual Info: PRODUCT BRIEF | FEBRUARY 10, 2004 1 x 4 GaAs PIN Photodiode Array Model 8485-1406 Features Data rates of 3.125 Gb/s per channel Excellent responsivity Uniform channel to channel characteristics Excellent crosstalk attenuation Low dark current EMCORE’s 4 channel Gallium Arsenide GaAs PIN photodiode array is

Contextual Info: PHOTODIODE GaAs photodiode array G8921-01 Photodiode array for data communication Features Applications l Active area: φ0.06 mm Element pitch: 250 µm 4-element array l High-speed response: 10 Gbps [ 2.5 Gbps per channel x4] at low bias voltage (VR=2 V)

Contextual Info: PHOTODIODE GaAs PIN photodiode array G8921-01 Photodiode array for data communication Features Applications l Active area: φ0.06 mm Element pitch: 250 µm 4-element array l High-speed response: 10 Gbps [ 2.5 Gbps per channel x4] at low bias voltage (VR=2 V)

16 Photodiode-Array

Abstract: Photodiode-Array SE-171 G8921-01 KGPD1009E02 GaAs photodiode operating temperature range
Contextual Info: PHOTODIODE GaAs PIN photodiode array G8921-01 Photodiode array for data communication Features Applications l Active area: φ0.06 mm Element pitch: 250 µm 4-element array l High-speed response: 10 Gbps [ 2.5 Gbps per channel x4] at low bias voltage (VR=2 V)

Photodiode-Array

Abstract: G8921-01 KGPD1009E02 SE-171
Contextual Info: PHOTODIODE GaAs PIN photodiode array G8921-01 Photodiode array for data communication Features Applications l Active area: φ0.06 mm Element pitch: 250 µm 4-element array l High-speed response: 10 Gbps [ 2.5 Gbps per channel x4] at low bias voltage (VR=2 V)

emcore

Abstract: PHOTODIODE 4 CHANNEL ARRAY EMCORE photodiode GaAs photodiode Emcore photodiode die WAFER 1055 EMCORE photodiode array
Contextual Info: 1 x 4 GaAs PIN Photodiode Array Product Description EMCORE’s 4 channel Gallium Arsenide GaAs PIN photodiode array is designed for multimode fiber applications. Utilizing EMCORE’s own state-of-the-art MOCVD wafer foundry and device fabrication facility guarantees a reliable high

photodiode die WAFER

Abstract: GaAs photodiode Emcore PHOTODIODE 4 CHANNEL ARRAY emcore EMCORE photodiode array 50 um photodiode 1055 Photodiode Array
Contextual Info: 1 x 4 GaAs PIN Photodiode Array Product Description EMCORE’s 4 channel Gallium Arsenide GaAs PIN photodiode array is designed for multimode fiber applications. Utilizing EMCORE’s own state-of-the-art MOCVD wafer foundry and device fabrication facility guarantees a reliable high

spcm-aq4c

Abstract: PerkinElmer Avalanche Photodiode SPCM Arrays of Photon-Counting Detectors lidar apd model DTS1005 SPCM-AQ
Contextual Info: The SPCM-AQ4C is a 4-channel photon counting card capable of detecting single photons of light over the wavelength range from 400 nm to 1060 nm. Each channel is independent from the others. The SPCM-AQ4C uses a unique silicon avalanche photodiode SliK that has a circular active

vcsel array

Abstract: FCC2 Coupling to Fiber
Contextual Info: PRODUCT INFORMATION This device consists of a 4-channel PIN Photodiode array in a miniature sur­ face-m ountable MT package. It is based on a unique combination of self­ alignment technology and direct opti­ cal coupling to fiber, resulting in opti­ mum coupling efficiency without need

4D469

Abstract: 4D470 VR33
Contextual Info: PRODUCT INFORMATION 4D470 840nm LI Parallel Datacom, Telecom PIN Array This device consists of a 4-channel PIN Photodiode array in a miniature surface-mountable MT package. It is based on a unique combination of selfalignment technology and direct optical coupling to fiber, resulting in optimum coupling efficiency without need

PHOTODIODE 4 CHANNEL ARRAY

Contextual Info: Agilent HDJD-S831-QT000 Color Sensor Module Data Sheet Description Agilent Color Sensor is a high performance, small in size, cost effective light to voltage converting sensor. The sensor combines a photodiode array and three trans-impedance amplifiers in a single monolithic

HDJD-S831-QT333

Abstract: 90 nm CMOS Photodiode-Array QFN-16 Photodiode as light sensor
Contextual Info: HDJD-S831-QT333 Color Sensor Module Data Sheet Description Avago Color Sensor is a high performance, small in size, cost effective light to voltage converting sensor. The sensor combines a photodiode array and three trans-impedance amplifiers in a single monolithic

HDJD-S831-QT333

Abstract: QFN-16 PHOTODIODE 4 CHANNEL ARRAY
Contextual Info: Agilent HDJD-S831-QT333 Color Sensor Module Data Sheet Description Agilent Color Sensor is a high performance, small in size, cost effective light to voltage converting sensor. The sensor combines a photodiode array and three trans-impedance amplifiers in a single monolithic

color filter photodiode

Abstract: Photodiode as light sensor tray 12X12 green light photodiode sensor
Contextual Info: HDJD-S831-QT000 Color Sensor Module Data Sheet Description Avago Color Sensor is a high performance, small in size, cost effective light to voltage converting sensor. The sensor combines a photodiode array and three trans-impedance amplifiers in a single monolithic

Contextual Info: HDJD-S831-QT333 Color Sensor Module Data Sheet Description Avago Color Sensor is a high performance, small in size, cost effective light to voltage converting sensor. The sensor combines a photodiode array and three trans-impedance amplifiers in a single monolithic

Contextual Info: Photodiode arrays with ampli¿er S8865-64G/-128G/-256G S8866-64G-02/-128G-02 Photodiode array combined with signal processing IC for X-ray detection The S8866-64G-02/-128G-02 are photodiode arrays with an ampli¿er and a phosphor sheet attached to the active area for X-ray

silicon photodiode array

Abstract: 16 Photodiode-Array S8866-64 S8866-64G-02 KMPDC0072EA PHOTODIODE 4 CHANNEL ARRAY
Contextual Info: Photodiode arrays with ampli¿er S8866-64/-128 Photodiode array combined with signal processing IC The S8866-64 and S8866-128 are Si photodiode arrays combined with a signal processing IC chip. The signal processing IC chip is formed by CMOS process and incorporates a timing generator, shift register, charge ampli¿er array, clamp circuit and hold circuit, making the external circuit con¿guration simple. For X-ray detection applications, types S8866-64G-02, S8866-128G-02

photodiode 460nm

Abstract: HDJD-S822-QR999 LF-310 Photodiode-Array GS11 IPC-SM-782 QFN-16 11-LP
Contextual Info: HDJD-S822-QR999 RGB Color Sensor Data Sheet Description Features HDJD-S822-QR999 is a high performance, small in size, cost effective light to voltage converting sensor. The sensor combines a photodiode array and three transimpedance amplifiers in a single monolithic CMOS IC

Contextual Info: Photodiode arrays with ampli¿er S8866-64/-128 Photodiode array combined with signal processing IC The S8866-64 and S8866-128 are Si photodiode arrays combined with a signal processing IC chip. The signal processing IC chip is formed by CMOS process and incorporates a timing generator, shift register, charge ampli¿er array, clamp circuit and

Contextual Info: Photodiode arrays with ampli¿er S8865-64G/-128G/-256G S8866-64G-02/-128G-02 Photodiode array combined with signal processing IC for X-ray detection The S8866-64G-02/-128G-02 are photodiode arrays with an ampli¿er and a phosphor sheet attached to the active area for X-ray

s886564g

Abstract: KMPDC0072EA
Contextual Info: Photodiode arrays with ampli¿er S8865-64G/-128G/-256G S8866-64G-02/-128G-02 Photodiode array combined with signal processing IC for X-ray detection The S8866-64G-02/-128G-02 are photodiode arrays with an ampli¿er and a phosphor sheet attached to the active area for X-ray

Durtal

Abstract: x-ray tube S8865-64G IC 74hc32 image sensor x-ray S8865-256G sensor x-ray c911 S8865 C9118 x-ray tube datasheet
Contextual Info: Photodiode arrays with ampli¿er S8865-64G/-128G/-256G S8866-64G-02/-128G-02 Photodiode array combined with signal processing IC for X-ray detection The S8866-64G-02/-128G-02 are photodiode arrays with an ampli¿er and a phosphor sheet attached to the active area for X-ray

Contextual Info: Photodiode arrays with ampli¿er S8865-64/-128/-256 S8866-64-02/-128-02 Photodiode array combined with signal processing IC The S8865-64/-128/-256 and S8866-64-02/-128-02 are Si photodiode arrays combined with a signal processing IC chip. The signal processing IC chip is formed by CMOS process and incorporates a timing generator, shift register, charge ampli¿er array,

R800-10-012-20-001

Abstract: S8865-64 16 Photodiode-Array S8865 C9118 S8865-64G S8866-64 S8866-64G-02 C9118 S8865-128 S8865-256
Contextual Info: Photodiode arrays with ampli¿er S8865-64/-128/-256 S8866-64-02/-128-02 Photodiode array combined with signal processing IC The S8865-64/-128/-256 and S8866-64-02/-128-02 are Si photodiode arrays combined with a signal processing IC chip. The signal processing IC chip is formed by CMOS process and incorporates a timing generator, shift register, charge ampli¿er array,