PHOTODIODE 325 NM -1100 NM Search Results

PHOTODIODE 325 NM -1100 NM Result Highlights (5)

Part	Manufacturer	Description	Download
TPH1100CQ5	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 150 V, 49 A, 0.0111 Ω@10 V, High-speed diode, SOP Advance(N)	Datasheet
OPT301M	Texas Instruments	Integrated Photodiode and Amplifier In Hermetically Sealed Package 8-TO -55 to 125
OPT101P-J	Texas Instruments	Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-SOP 0 to 70
OPT101P-JG4	Texas Instruments	Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-SOP 0 to 70
OPT101PG4	Texas Instruments	Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-PDIP 0 to 70

PHOTODIODE 325 NM -1100 NM Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SAT800X Abstract: SAT3000 SAT3000x TO-37 avalanche Photodiode 300 nm . LIDAR photodiode SAT3000 Contextual Info: Silicon Avalanche Photodiode SAT-Series DESCRIPTION The SAT-Series is based on a “reach-through” structure for excellent quantum efficiency, high speed and targeted for the 1060 nm detection region. The chip is hermetically sealed in a modified TO-8 / TO-5	Original	sat3000x SAT800X SAT3000 TO-37 avalanche Photodiode 300 nm . LIDAR photodiode SAT3000	PDF
uv photodiode Abstract: colorimeter Contextual Info: PHOTONIC Silicon Photodiode, U.V. Enhanced Photoconductive Isolated Type PDU-C106-I DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] Ø0.325 [8.25] U.V. WINDOW CAP WELDED 0.030 [0.76] Ø0.250 [6.35] 0.168 [4.26] 0.095 [2.41] WIRE BONDS CL 0.500 [12.70] MIN 45°	Original	PDU-C106-I 100-PDU-C106-I uv photodiode colorimeter	PDF
PDB-C611-1 Abstract: PDB-C611-2 PDB-C611-3 PDB-V611-1 PDB-V611-2 photovoltaic photoconductive Contextual Info: PHOTONIC Silicon Photodiode, Blue Enhanced Solderable Chips Photoconductive Type PDB-C611 Photovoltaic Type PDB-V611 DETECTORS INC. PACKAGE DIMENSIONS INCH mm 1.375 [34.93] 1.375 [34.93] 1.375 [34.93] 1.00 [25.4] 1.250 [31.75] 0.096 [2.44] 0.096 [2.44] 0.027 [0.69]	Original	PDB-C611 PDB-V611 PDB-C611-2 PDB-V611-2 Th650 PDB-C611 100-PDB-C611-V611 PDB-C611-1 PDB-C611-2 PDB-C611-3 PDB-V611-1 PDB-V611-2 photovoltaic photoconductive	PDF
nir emitter leds with 700 to 900 nm Abstract: ODD-660W ansi z136.1 -vcsel photodiode 650nm nep UV led diode 200 nm peak 1W OD-850-30-030 OD-800W ODD-42WB "infrared led" 800 nm 980 nm led nir Contextual Info: Optoelectronics Data Book Innovators in Optoelectronics TABLE OF CONTENTS Alphanumeric Eye Safety	Original	660nm ODD-660W nir emitter leds with 700 to 900 nm ODD-660W ansi z136.1 -vcsel photodiode 650nm nep UV led diode 200 nm peak 1W OD-850-30-030 OD-800W ODD-42WB "infrared led" 800 nm 980 nm led nir	PDF
Contextual Info: F r & g/CANADA /OP TOELEK n o n I ] ,□]>• 3030bl0 □□□□□40 SSE « C A N A Solid State Detectors Electro optics and Devices Developm ental TvDe C30948E Photodiode Silicon Avalanche Photodiode Having Very High Modulation Capability ■ High Quantum Efficiency 85% typical at 830 and 900 nm	OCR Scan	3030bl0 C30948E C30948E	PDF
Contextual Info: PHOTONIC DETECTORS INC. Detector Amplifier Hybrid, U.V. Enhanced Type PDU-706 PACKAGE DIMENSIONS INCH [mm] ±.002 [0.05] Ø.360 [9.14] U.V. WINDOW CAP WELDED .106 [2.69] ACTIVE AREA SURFACE .257 [6.58] .500 [12.70] MIN Ø 0.120 [3.05] CERAMIC STANDOFF 71°	Original	PDU-706 PDU-706 100-PDU-706	PDF
photodiode bias circuit Abstract: photodiode pin Contextual Info: PHOTONIC DETECTORS INC. Detector Amplifier Hybrid, Blue Enhanced ref PDB-C705 Type PDB-705 PACKAGE DIMENSIONS INCH [mm] WINDOW CAP (WELDED) ±.002 [0.05] Ø.360 [9.14] .257 [6.58] .500 [12.70] MIN .106 [2.69] ACTIVE AREA SURFACE Ø.240 [6.10] Ø.325 [8.26]	Original	PDB-C705) PDB-705 PDB-705 100-PDB-705 photodiode bias circuit photodiode pin	PDF
photovoltaic sensor Abstract: PHOTOVOLTAIC CELL MAX 797 DATASHEET PDB-C610-1 PDB-C610-2 PDB-C610-3 PDB-V610-3 photovoltaic photoconductive Contextual Info: PHOTONIC Silicon Photodiode, Blue Enhanced Solderable Chips Photoconductive Type PDB-C610 Photovoltaic Type PDB-V610 DETECTORS INC. PACKAGE DIMENSIONS INCH mm 0.797 [20.24] 0.797 [20.24] 0.797 [20.24] 1.250 [31.75] 1.00 [25.4] 0.029 [0.74] 0.097 [2.46] 0.097 [2.46]	Original	PDB-C610 PDB-V610 PDB-C610-2 PDB-V610-2 PDB-C610-3 PDB-V610-3 PDB-C610-1 PDB-V610-1 100-PDB-C610-V610 photovoltaic sensor PHOTOVOLTAIC CELL MAX 797 DATASHEET PDB-C610-1 PDB-C610-2 PDB-C610-3 PDB-V610-3 photovoltaic photoconductive	PDF
Contextual Info: SIEMENS Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Silicon PIN Photodiode with Very Short Switching Time Silicon PIN Photodiode with Daylight Filter SFH 229 SFH 229 F Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.	OCR Scan	fl535b05	PDF
Photodiode laser detector BPX-65 Abstract: BPX65 amplifier UDT Sensors avalanche photodiode bias InGaAs apd photodiode power amplifier optic fiber photodiode BPX65 Contextual Info: FIBER OPTIC SERIES APPLICATIONS FEATURES • Fiber Optic Communication Links • Speeds in sub ns • Video Systems • High gain • Laser Monitoring Systems • Low dark current • Computers and Peripherals • Low capacitance • Industrial Controls • TO-46 metal can	Original	7/TO-18 Photodiode laser detector BPX-65 BPX65 amplifier UDT Sensors avalanche photodiode bias InGaAs apd photodiode power amplifier optic fiber photodiode BPX65	PDF
10G APD chip Abstract: Photodiode apd amplifier 500 watts amplifier schematic diagram PSS-AD500-1 10G APD photodiode Avalanche photodiode APD photodiode Avalanche photodiode APD FOR POWER avalanche photodiode receiver AD500 PSS-AD500 Contextual Info: Pacific Silicon Sensor Inc. Data Sheet PSS-AD500-1.3G-TO5 OPTICAL DATA RECEIVER USING AN AVALANCHE PHOTODIODE AND A 1.3 GHz AMPLIFIER PSS-AD500-1.3G-TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a	Original	PSS-AD500-1 10G APD chip Photodiode apd amplifier 500 watts amplifier schematic diagram 10G APD photodiode Avalanche photodiode APD photodiode Avalanche photodiode APD FOR POWER avalanche photodiode receiver AD500 PSS-AD500	PDF
transistor SR 13001 Abstract: IR photodiode 95w OD-520L UV led diode 200 nm peak 1W ODD-470W OD-830-99-070 ODD-525W ODD-660W OD50L OD-50L Contextual Info: Optoelectronics Data Book Innovators in Optoelectronics TABLE OF CONTENTS Alphanumeric Eye Safety	Original	660nm ODD-660W transistor SR 13001 IR photodiode 95w OD-520L UV led diode 200 nm peak 1W ODD-470W OD-830-99-070 ODD-525W ODD-660W OD50L OD-50L	PDF
Contextual Info: TIED69 Avalanche Photodiode Texas Optoelectronics, Inc. D E SC R IP T IO N FEATURES The TIED69 is a high-speed, high-resistivity photodiode. It is designed to operate in the reverse-voltage avalanche region just below the breakdown voltage. T h is results in a	OCR Scan	TIED69 TIED69 TIED59 3L121-123) 1ZJ83	PDF
Contextual Info: itesi E G & G/ CANADA/ OPTOELEK IO D • 3G3DblO OGGG11S Electro Optics 266 «CANA Photodiode C30872 DATA SHEET Large Area Silicon Avalanche Photodiode for General-Purpose Applications IHigh Quantum Efficiency — 85% typical at 900 nm 18% typical at 1060 nm	OCR Scan	OGGG11S C30872 C30872 ED-0033/10/88	PDF

regulator 4468 Contextual Info: MDD FIBER OPTIC LINK FEATURES • • • • • Small size Bandwidth to 11 GHz Low noise figure Plug-in optical connector No external control circuits SPECIFICATIONS ELECTRICAL SPECIFICATIONS PARAMETERS Bandwidth Gain Noise figure see graph Group delay	Original	D-279 regulator 4468	PDF
Siemens photodiode BPW34 Contextual Info: SIEMENS Silizium-PIN-Fotodiode NEU: in SMT Silicon PIN Photodiode NEW: in SMT BPW 34 BPW 34 S 5 .4 sp a c in g - F la s h a re a -R a d ia n t se n sitive a re a C a tho de A p p ro x . w e ig h t 0.1 g 1.1 = 2 .6 5 m m x 2 .6 5 m m Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.	OCR Scan		PDF
Detectors in communication Abstract: InGaAs apd photodiode BPX65 high sensitive AAS-100 InGaAs-300L fiber optic detectors Photodiode laser detector BPX-65 ingaas apd photodetector UDT Sensors Contextual Info: FIBER OPTIC SERIES APPLICATIONS FEATURES • Fiber Optic Communication Links • Speeds in sub ns • Video Systems • High gain • Laser Monitoring Systems • Low dark current • Computers and Peripherals • Low capacitance • Industrial Controls • TO-46 metal can	Original	InGaAs-100L InGaAs-300L. aAs-300L aAs-100L Detectors in communication InGaAs apd photodiode BPX65 high sensitive AAS-100 InGaAs-300L fiber optic detectors Photodiode laser detector BPX-65 ingaas apd photodetector UDT Sensors	PDF
Contextual Info: PD LD Inc. PDINJ Series Analog InGaAsP PIN Photodiodes Analog InGaAs PIN Detectors PD-LD Inc. offers low noise, high responsivity analog InGaAsP photo detectors in convenient fiber coupled packages. These assemblies incorporate 75 micron diameter active area detector	Original	10meter	PDF
VTP8651 Abstract: VTP1112 VTP4085 VTP1188S VTP11188S VTP1232 silicon photodiode array VTP1012 VTP7840 VTP100 Contextual Info: VTP Process Photodiodes VTP100 PACKAGE DIMENSIONS inch mm CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic sidelooker package. The package material is infrared transmitting (blocking visible light).	Original	VTP100 VTP8651 VTP1112 VTP4085 VTP1188S VTP11188S VTP1232 silicon photodiode array VTP1012 VTP7840 VTP100	PDF
Contextual Info: Photo IC diode S11153-01MT Wide operating temperature: -40 to +100 °C The S11153-01MT photo IC has spectral response close to human eye sensitivity. Two active areas are made on a single chip. Almost only the visible range can be measured by finding the difference between the two output signals in the internal current	Original	S11153-01MT S11153-01MT KPIC1080E02	PDF
Contextual Info: Photo IC diode S11153-01MT Wide operating temperature: -40 to +100 °C The S11153-01MT photo IC has spectral response close to human eye sensitivity. Two active areas are made on a single chip. Almost only the visible range can be measured by finding the difference between the two output signals in the internal current	Original	S11153-01MT S11153-01MT SE-171 KPIC1080E01	PDF
photodiode 325 nm -1100 nm Abstract: PDINJ075FCCB-O-V-MM Receptacle InGaAs Photodiode 1550nm Contextual Info: PD Inc LD PDINJ Series Analog InGaAsP PIN Photodiodes Analog InGaAs PIN Detectors PD-LD Inc. offers low noise, high responsivity analog InGaAsP photo detectors in convenient fiber coupled packages. These assemblies incorporate 75 micron diameter active area detector	Original		PDF
TRANSISTOR SMD MARKING CODE 3401 Abstract: DIODE B-10 TRANSISTOR SMD MARKING CODE 702 TRANSISTOR SMD MARKING CODE r28 TRANSISTOR SMD MARKING CODE NM SFH4450 GEOY6969 SFH 4232 SFH 4740 702 transistor smd code Contextual Info: Infrared Components ge 88 - 92 107 108 Infrared Components Summary of Types Silicon Photodetectors For moreComponents Infrared detailed product Summary information of Types andSilicon technical Photodetectors datasheets, please visit http://catalog.osram-os.com	Original	GEXY6713 TRANSISTOR SMD MARKING CODE 3401 DIODE B-10 TRANSISTOR SMD MARKING CODE 702 TRANSISTOR SMD MARKING CODE r28 TRANSISTOR SMD MARKING CODE NM SFH4450 GEOY6969 SFH 4232 SFH 4740 702 transistor smd code	PDF
analog PIN Photodiode 3GHz Abstract: Receptacle InGaAs Photodiode 1550nm PDINJ075FCCB-O-V-MM Contextual Info: PD Inc LD PDINJ Series Analog InGaAsP PIN Photodiodes Analog InGaAs PIN Detectors PD-LD Inc. offers low noise, high responsivity analog InGaAsP photo detectors in convenient fiber coupled packages. These assemblies incorporate 75 micron diameter active area detector	Original		PDF

PHOTODIODE 325 NM -1100 NM Search Results

PHOTODIODE 325 NM -1100 NM Result Highlights (5)

PHOTODIODE 325 NM -1100 NM Datasheets Context Search

SAT800X

uv photodiode

PDB-C611-1

nir emitter leds with 700 to 900 nm

photodiode bias circuit

photovoltaic sensor

Photodiode laser detector BPX-65

10G APD chip

transistor SR 13001

regulator 4468

Siemens photodiode BPW34

Detectors in communication

VTP8651

photodiode 325 nm -1100 nm

TRANSISTOR SMD MARKING CODE 3401

analog PIN Photodiode 3GHz