PHILIPS RF POWER AMPLIFIER MODULE Search Results

Contextual Info: N AUER PHILIPS/DISCRETE bTE D Philips Components • bbSaiai OQBQEfiD =144 BGY112A/112B/112C Data sheet status Preliminary specification date of issue May 1991 VHF amplifier modules PINNING - SOT288C DESCRIPTION A range of RF power amplifier modules designed for use in

vHF amplifier module

Abstract: 2222 852 47103 PHILIPS VHF AMPLIFIER MODULE LIST ferrite rg 316 double heatsink catalogue BGY143 broadband amplifier module
Contextual Info: Philips Semiconductors Product specification VHF power amplifier module DESCRIPTION Broadband amplifier module, designed for mobile communications equipment operating directly from 12 V electrical systems. The module consists of a two stage RF amplifier using NPN transistor

circuit diagram of pi controller using op-amp

Abstract: LTA 702 N PCA5075 SSOP20
Contextual Info: NAPC/PHILIPS SEMICOND fc,7E D • bbS3T24 QDST17H BT1 « S I C 3 Philips Semiconductors RF Communications Products Preliminary specification ■ Power amplifier controller for GSM systems FEATURES PCA5075 QUICK REFERENCE DATA .CMOS low power SYMBOL PARAMETER

ultrasonic 100 khz transmitter

Abstract: BGY208 JR 200 RF TRANSMITTER
Contextual Info: Objective specification Philips Semiconductors UHF amplifier module BGY208 PINNING - SOT388A FEATURES • 6.8 V nominal supply voltage DESCRIPTION PIN • 3.5 W output power • Easy output power control by DC voltage. APPLICATIONS 1 RF input 2 VC 3 Vs 4 RF output

msa386

Abstract: BGY207 915 transistor ULTRASONIC MODULE us
Contextual Info: Philips Semiconductors Objective specification UHF amplifier module BGY207 FEATURES PINNING - SOT359A • 4.8 V nominal supply voltage PIN DESCRIPTION • 1.2 W output power 1 RF input • Easy output power control by DC voltage. 2 Vc 3 Vs RF output APPLICATIONS

NTC 220-11

Abstract: PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide
Contextual Info: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 1 Transmitting transistor design transistors are suitable, see panel, and Philips Semiconductors’ portfolio includes both types. Their relative merits are summarized later in this section. First,

BGY925

Abstract: RF MOSFET MODULE MCD835 K-920 MSA44
Contextual Info: Philips Semiconductors Product specification UHF amplifier module BGY925/5 FEATURES PINNING - SOT365A • 26 V nominal supply voltage PIN • 23 W output power into a load of 50 £2 with an RF drive power of 36 mW. APPLICATIONS DESCRIPTION 1 RF input 2 Vsi

PCA5075

Abstract: SSOP20
Contextual Info: PHILIPS INTERNATIONAL b?E D • ?110A2b DQbSlSO Sfil « P H I N Philips Sem iconductors RF Communications Products Preliminary specification Power amplifier controller for GSM systems FEATURES PCA5075 QUICK REFERENCE DATA .CMOS low power SYMBOL PARAMETER MIN. TYP. MAX. UNIT

y112

Abstract: BGY112A BGY112B BGY112C DD302
Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bbSa^l GQ3QSÖD T4M M A P X Philips Components Data sheet status Preliminary specification date of issue May 1991 B G Y 1 1 2 A/1 1 2 B/1 1 2 C VHF amplifier modules PINNING - SOT288C DESCRIPTION A range of RF power amplifier

245 VHF AMplifier

Abstract: BGY43 vhf power module philips vhf amplifier module
Contextual Info: Product specification Philips Semiconductors VH F power amplifier module BGY43 PINNING-SOT132B FEATURES • Broadband VHF amplifier PIN • 13 W output power • Direct operation from 12 V vehicle electrical systems 1 RF input 2 ground 3 4 APPLICATIONS 5 • Mobile communication equipment

BGY43

Abstract: vHF amplifier module 245 VHF AMplifier 1047B u1047 PINNING-SOT132B
Contextual Info: Product specification Philips Semiconductors VH F power amplifier module BGY43 PINNING-SOT132B FEATURES • Broadband VHF amplifier • 13 W output power • Direct operation from 12 V vehicle electrical systems PIN 1 RF input 2 ground 3 4 APPLICATIONS 5 • Mobile communication equipment

SOT333

Abstract: SOT423 sot468 thermal compound wps II TO metal package aluminum kovar SOT439 Transistor Packages sot262 SOT443 rf transistor smd pages
Contextual Info: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 4 RF and microwave transistor packages RF AND MICROWAVE TRANSISTOR PACKAGES handbook, halfpage The packages of electronic devices are, in general, designed to: metal cap – Protect the electronics from mechanical damage

Contextual Info: Philips Semiconductors Product specification UHF amplifier module BGY925 FEATURES PINNING - SOT365A • 26 V nominal supply voltage PIN • 23 W output power into a load of 50 Q with an RF drive power of 36 mW. APPLICATIONS DESCRIPTION 1 RF input 2 Vsi 3 VS2

BGY204

Abstract: FERROXCUBE 4330 capacitor 680
Contextual Info: Product specification Philips Semiconductors BGY204 UHF amplifier module PINNING -S O T 321B FEATURES • 4.8 V nominal supply voltage DESCRIPTION PIN • 3.2 W output power 1 RF input • Easy control of output power by DC voltage. 2 Vc 3 VS 4 RF output APPLICATIONS

cd 2003 gp

Abstract: 2322 195 4330 ferroxcube cd 4074 B
Contextual Info: Philips Semiconductors Product specification UHF amplifier module BGY916/5 PINNING SOT365A FEATURES • 26 V nominal supply voltage PIN DESCRIPTION • 5 V nominal bias voltage 1 RF input • 16 W output power into a load of 50 D. with an RF drive power of 25 mW.

ci cd 4074

Abstract: BGY916/S FERROXCUBE 4330
Contextual Info: Philips Semiconductors Product specification UHF amplifier module BGY916/5 FEATURES PINNING SOT365 • 26 V nominal supply voltage PIN DESCRIPTION • 5 V nominal bias voltage 1 RF input • 16 W output power into a load of 50 Cl with an RF drive power of 25 mW.

vHF amplifier module

Abstract: BGY143 S-12 PL-13W RF amplifier module VHF Amplifier Chip vhf power module
Contextual Info: Product specification Philips Semiconductors VHF power amplifier module BGY143 PINNING -SOT132B FEATURES • 12.5 V nominal supply voltage DESCRIPTION PIN • 13 W output power. 1 RF input 2 ground APPLICATIONS 3 • Mobile communication equipment operating directly

BGY36

Abstract: BGY32 BGY33 BGY35 an power amplifier 108 mhz
Contextual Info: Philips Semiconductors Product specification BGY32; BGY33; BGY35; BGY36 VHF power amplifier modules PINNING - SOT132B FEATURESS • Broadband VHF amplifiers DESCRIPTION PIN • 18 W output power 1 RF input • Direct operation from 12 V vehicle electrical systems.

DC/DC R-785

Abstract: pn 2222 - b2b BGY21 transistor tt 2222 TT 2222 npn 171C BGY210 DCS1800
Contextual Info: Preliminary specification Philips Semiconductors UHF amplifier module BGY210 P IN N IN G -S O T321B FEATURES • 6 V nominal supply voltage PIN DESCRIPTION • 2 W pulsed output power 1 RF input • Easy control of output power by DC voltage. 2 Vc 3 Vs 4 RF output

BGY120A

Abstract: BGY120B BGY120D
Contextual Info: Philips Semiconductors Objective specification BGY120A; BGY120B; BGY120D UHF amplifier modules FEATURES PINNING - SOT388A • Single 3.6 V nominal supply voltage PIN DESCRIPTION • 1.2 W output power 1 RF input • Easy control of output power by DC voltage

RF MOSFET MODULE

Abstract: BGY152A BGY152B
Contextual Info: Preliminary specification Philips Semiconductors UHF amplifier modules BGY152A; BGY152B FEATURES PINNING - SOT434A • 7.2 V nominal supply voltage DESCRIPTION PIN • 7 W output power 1 RF input + Vc • Easy output power control by DC voltage. 2 Vsi 3 Vs2

K 872

Abstract: UHF amplifier module BGV118A BGY118A BGY118B BGY118D
Contextual Info: Product specification Philips Semiconductors BGY118A; BGY118B; BGY118D UHF amplifier modules PINNING SOT321A FEATURES • Single 4.8 V nominal supply voltage DESCRIPTION PIN • 1.2 W output power 1 RF input • Easy output power control by DC voltage 2 VC

Contextual Info: Philips Semiconductors Concise Catalogue 1996 RF & MICROWAVE SEMICONDUCTORS & MODULES MODULES CATV amplifiers CATV AMPLIFIER MODULES power gain type number dB composite triple beat (dB) output voltage (dBmV) total DC current consumption (mA) max 14 chs min

BGY172

Contextual Info: Objective specification Philips Semiconductors UHF amplifier module BGY172 PINNING - SOT434A FEATURES • 7.2 V nominal supply voltage PIN • 5 W output power 1 • Easy output power control by DC voltage. 2 DESCRIPTION RF input + V c APPLICATIONS 4 Vsi Vs2