PHILIPS Q 522 Search Results

TDA1543A

Abstract: TDA1543 s6 general semiconductor
Contextual Info: P H I L IP S INTERNATIONAL SGE ]> Philips Sem iconductors • 711Qflat. Q D B E T T M 522 ■ PHIN TDA1543 A /S6 Data sheet status Product specification date of issue February 1991 T - s t - o r -te Dual 16-bit low-cost economy DAC (relaxed version of TDA1543A)

74ALVC16245-1DGG

Abstract: pc4570 equivalent 74ALVC16245-1DL ALVC16245-1 SSOP48 TSSOP48 2B6M mj2a
Contextual Info: Philips Semiconductors Objective Specification 16-bit 30 Q terminated bus transceiver with direction pin; 3-state 74ALVC16245-1 FEATURES • • • • • QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; t, = t, = 2.5 ns Wide supply voltage range of 1.2 V to 3.6 V

ne521

Abstract: NE529 SE521 comparator test circuit zero crossing detector inverter LM319 AN-116 SL00743 LM319 data NE527 SE527
Contextual Info: INTEGRATED CIRCUITS AN116 Applications for the NE521/522/527/529 1988 Dec Philips Semiconductors Philips Semiconductors Application note Applications for the NE521/522/527/529 AN116 since the analog signal in the meantime has changed value. At low frequencies the delay is of small consequence, but at higher

zener IN 5232B

Abstract: 5252B
Contextual Info: • bbS3T31 OOHSTQfl TT? H A P X N AMER PHILIPS/DISCRETE PMBZ 5226B to b7E J> PMBZ 5257B y v . SILICON PLANAR VOLTAGE REGULATOR DIODES Low power general purpose voltage regulator diodes in a microminiature plastic envelope intended for application in th ick and th in film circuits. The series covers the range o f nominal working voltages from

BGE847BO

Abstract: 72125
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D456 BGE847BO; BGE847BO/FC0; BGE847BO/SC0 Optical receiver modules Product specification Supersedes data of 2000 Apr 04 2001 Feb 27 Philips Semiconductors Product specification BGE847BO; BGE847BO/FC0; BGE847BO/SC0

w2 mark 5 pin mosfet smd

Abstract: Philips SC07 Small-signal Transistors transistor bf 175
Contextual Info: For an update of this information, please go to the package website. SC18_1999_.book : SC18_PREFACE_1999 i Wed May 12 11:40:55 1999 Philips Semiconductors Discrete Semiconductor Packages Preface TABLE OF CONTENTS Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . iii

SO32

Abstract: TDA8051 TDA8751T qpsk receiver
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TDA8051 QPSK receiver Product specification Supersedes data of 1998 Jan 08 File under Integrated Circuits, IC02 1999 Aug 20 Philips Semiconductors Product specification QPSK receiver TDA8051 FEATURES GENERAL DESCRIPTION • High operating input sensitivity

74LVC1G80

Abstract: 74LVC1G80GW
Contextual Info: INTEGRATED CIRCUITS DATA SHEET 74LVC1G80 Single D-type flip-flop; positive-edge trigger Product specification File under Integrated Circuits, IC24 2001 Apr 04 Philips Semiconductors Product specification Single D-type flip-flop; positive-edge trigger 74LVC1G80

varicon toko HU-22124

Abstract: CDA 10.7 MC 40 TOKO IFT TEA5710 HU-22124 TOKO Varicon
Contextual Info: Product specification Philips Semiconductors AM/FM radio receiver circuit TEA5710; TEA5710T FEATURES QUICK REFERENCE DATA • Wide supply voltage range: 2.0 to 12 V Conditions AM: f, = 1 MHz; m = 0.3; fm = 1 kHz; Vp = 3.0 V; measured in Fig.4 with S1 in position B and S2 in position A, unless otherwise specified.

74AHC1G79

Abstract: 74AHC1G79GW 74AHCT1G79 74AHCT1G79GW
Contextual Info: INTEGRATED CIRCUITS DATA SHEET 74AHC1G79; 74AHCT1G79 Single D-type flip-flop; positive-edge trigger Product specification File under Integrated Circuits, IC06 1999 May 18 Philips Semiconductors Product specification 74AHC1G79; 74AHCT1G79 Single D-type flip-flop; positive-edge trigger

CDA 10.7 MC 40

Abstract: dts circuit board BB112 equivalent variable coils toko s18 CDA 10.7 TEA5712T bb112 murata SFE 10.7 FM radio CIRcuit DIAGRAM TEA5712
Contextual Info: Philips Semiconductors Product specification AM/FM stereo DTS radio circuit TEA5712; TEA5712T • Designed for simple and reliable printed-circuit board layout FEATURES • Wide supply voltage range: 1.8 or 2.1 to 12 V • Low current consumption: 16 mA at AM, 17 mA at FM

transistor smd d9d

Abstract: smd d9d D9D smd smd transistor d4d smd transistor d9d QFP44 TDA8779 TDA8779H smd code D9D
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TDA8779H 10-bit converter interface ADC/DAC for quadrature transceiver Product specification Supersedes data of 1999 Jan 18 File under Integrated Circuits, IC02 1999 Sep 16 Philips Semiconductors Product specification 10-bit converter interface (ADC/DAC) for

transistor BR 471 A

Abstract: 74 series PHILIPS PHP95N03LT PHB95N03LT PHE95N03LT
Contextual Info: PHP95N03LT; PHB95N03LT; PHE95N03LT N-channel TrenchMOS transistor Rev. 01 — 02 February 2001 Product specification 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability:

BUK9E06-55A

Abstract: BUK9606-55A
Contextual Info: BUK9506-55A; BUK9606-55A; BUK9E06-55A TrenchMOS logic level FET Rev. 03 — 23 July 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.

74ahc164

Abstract: 74AHC164D 74AHC164PW 74AHCT164 74AHCT164D MNA600
Contextual Info: INTEGRATED CIRCUITS DATA SHEET 74AHC164; 74AHCT164 8-bit serial-in/parallel-out shift register Product specification File under Integrated Circuits, IC06 2000 Aug 15 Philips Semiconductors Product specification 8-bit serial-in/parallel-out shift register 74AHC164; 74AHCT164

DVB-S front end receiver single chip

Abstract: b816 TDA1008 TDA10085 DVB-S circuits DVB-S viterbi algorithm
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TDA10085 Single Chip DVB-S/DSS Channel Receiver Preliminary specification File under Integrated Circuits, IC02 2000 March 16 Philips Semiconductors Preliminary specification Single Chip DVB-S/DSS Channel Receiver TDA10085 FEATURES

PHB30NQ15T

Abstract: PHP30NQ15T 502mj
Contextual Info: PHP30NQ15T; PHB30NQ15T N-channel enhancement mode field-effect transistor Rev. 02 — 12 March 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability:

PHB73N06T

Abstract: PHP73N06T
Contextual Info: PHP73N06T; PHB73N06T N-channel enhancement mode field-effect transistor Rev. 01 — 12 March 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability:

Contextual Info: PHP112N06T; PHB112N06T N-channel enhancement mode field-effect transistor Rev. 01 — 07 March 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability:

5401 DM smd transistor

Abstract: 5401 DM PSMN070-200P PSMN070-200B 5401 DM transistor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PSMN070-200B; PSMN070-200P N-channel TrenchMOS TM transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor FEATURES PSMN070-200B; PSMN070-200P SYMBOL QUICK REFERENCE DATA

Contextual Info: PHP20N06T; PHB20N06T N-channel TrenchMOS transistor Rev. 01 — 22 February 2001 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHP20N06T in SOT78 TO-220AB

Contextual Info: BUK7506-55A; BUK7606-55A TrenchMOS standard level FET Rev. 02 — 03 July 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.

phd45n03

Abstract: PHP45N03LT PHD45N03L 74 series PHILIPS PHB45N03LT PHD45N03LT PHP45 php45n03
Contextual Info: PHP45N03LT; PHB45N03LT; PHD45N03LT N-channel TrenchMOS transistor Rev. 06 — 05 October 2000 Product specification 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability:

BUK9524-55A

Abstract: buk9624
Contextual Info: BUK9524-55A; BUK9624-55A TrenchMOS logic level FET Rev. 01 — 29 September 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.