PHILIPS FET S Search Results

CDM 12.6 Philips

Abstract: CBT3126 JESD22-A114 JESD22-A115 JESD78 SSOP14 TSSOP14
Contextual Info: INTEGRATED CIRCUITS CBT3126 Quadruple FET bus switch Product data File under Integrated Circuits — ICL03 Philips Semiconductors 2001 Dec 12 Philips Semiconductors Product data Quadruple FET bus switch CBT3126 DESCRIPTION PIN CONFIGURATION The CBT3126 quadruple FET bus switch features independent line

JESD22-A115

Abstract: JESD78 SSOP14 TSSOP14 CBT3125 JESD22-A114
Contextual Info: INTEGRATED CIRCUITS CBT3125 Quadruple FET bus switch Product data File under Integrated Circuits — ICL03 Philips Semiconductors 2001 Dec 12 Philips Semiconductors Product data Quadruple FET bus switch CBT3125 DESCRIPTION PIN CONFIGURATION The CBT3125 quadruple FET bus switch features independent line

mosfet handbook

Abstract: K 3053 TRANSISTOR MAM192 BF909WR Dual-Gate Mosfet dual-gate
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF909WR N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors 1995 Apr 25 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF909WR FEATURES

CBTS3253PW

Abstract: JESD22-A114 JESD22-A115 JESD78 CBTS3253 CBTS3253D CBTS3253DB CBTS3253DS CS3253 2b3 diode
Contextual Info: INTEGRATED CIRCUITS CBTS3253 Dual 1-of-4 FET multiplexer/demultiplexer with Schottky diode clamping Product data Philips Semiconductors 2002 Nov 06 Philips Semiconductors Product data Dual 1-of-4 FET multiplexer/demultiplexer with Schottky diode clamping FEATURES

CBT3253DB

Abstract: CBT3251 CBT3253 CBT3253D CBT3253DS JESD22-A114 JESD22-A115 JESD78 circuit diagram of 1-8 demultiplexer design logic 12002NOV
Contextual Info: INTEGRATED CIRCUITS CBT3253 Dual 1-of-4 FET multiplexer/demultiplexer Product data Philips Semiconductors 2002 Nov 04 Philips Semiconductors Product data Dual 1-of-4 FET multiplexer/demultiplexer FEATURES CBT3253 PIN CONFIGURATION • 5 Ω switch connection between two ports

SMD CODE MARKING s7 SOT23

Abstract: PMBFJ111 PMBFJ174 BSR56 BFT46
Contextual Info: SMD FET’s DESCRIPTION • Philips Components surface mount range of FET’s is the most extensive available, and offers low parasitic capacitance, negligible inductance, and reduced board assembly cost. The three categories of FET’s each have its own attributes

BF862

Abstract: BP317 MSB003
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BF862 N-channel junction FET Preliminary specification 1999 Jun 29 Philips Semiconductors Preliminary specification N-channel junction FET BF862 PINNING SOT23 FEATURES • High transition frequency for excellent sensitivity in

9033 transistor

Abstract: BF1203
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1203 Dual N-channel dual gate MOS-FET Product specification Supersedes data of 2000 Jun 06 2000 Dec 04 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1203

K638

Abstract: transistor S52 BUK638 DIODE 1000a fet 1000A
Contextual Info: Philips Com ponents Data sheet status Prelim inary specification date of issue March 1991 BUK638-1OOOA/B PowerMOS transistor Fast recovery diode FET PHILIPS INTERNATIONAL GENERAL DESCRIPTION N -channel enhancem ent m ode field-effect pow er transistor in a

Contextual Info: N ANER PHILIPS/DISCRETE fc.'lE D bbSBTBl DQBDafciD SHI * A P X Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISOTOP envelope. FREDFET with fast recovery

BF997

Abstract: Dual-Gate Mosfet dual-gate
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF997 N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF997 FEATURES DESCRIPTION • Protected against excessive input voltage surges by

BF990A

Abstract: mosfet handbook Dual-Gate Mosfet philips mosfet dual-gate
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF990A N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF990A FEATURES DESCRIPTION • Protected against excessive input voltage surges by

BF989

Abstract: Dual-Gate Mosfet dual-gate
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF989 N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF989 FEATURES DESCRIPTION • Protected against excessive input voltage surges by

BF989

Abstract: MOSFET 4466 BP317 SCA52 dual-gate
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF989 N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF989 FEATURES DESCRIPTION • Protected against excessive input voltage surges by

BUK555-60A

Abstract: BUK555-60B T0220AB
Contextual Info: PHILIPS INT ER NA TI O N AL bSE D • TllQAEb 0DbM241 Philips Semiconductors PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is Intended for use in

BUK637-400B

Contextual Info: PHILIPS IN TE RN AT IO NA L bSE ]> • 711DÖSb 0DbM3Gl Philips Semiconductors PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particular!/ suitable

Contextual Info: bbS3T31 QQ23b34 4tl N AflER PHILIPS/DISCRETE b?E D Philips Semiconductors Data sheet status Product specification T APX BF998 date of issue April 1991 Silicon n-channel dual gate MOS-FET FEATURES QUICK REFERENCE DATA • Short channel transistor with high

GI 312 diode

Abstract: sc1s3 K638 BUK638 BUK638-800A GDH473T
Contextual Info: Philips Components D ata sheet status Preliminary specification d ate of issue March 1991 BUK638-800A/B PowerMOS transistor Fast recovery diode FET PHILIPS INTERN A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

MOSFET 4466

Abstract: 4466 8 pin mosfet pin voltage dual sot363 BF1102 mosfet 1412 dual gate mosfet MGS365 marking code AL mosfet handbook
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage MBD128 BF1102 Dual N-channel dual gate MOS-FET Preliminary specification 1999 Jul 08 Philips Semiconductors Preliminary specification Dual N-channel dual gate MOS-FET BF1102 PINNING - SOT363 FEATURES • Two low noise gain controlled amplifiers in a single

transistor 614

Abstract: BUK539-60A 3909 230 AC to 5V dc smps
Contextual Info: T ï -Z > 9 -Æ Philips Com ponents Data sheet status Prelim inary specification date of issue March 1991 BUK539-60A PowerMOS transìstor Logic level FET PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

BUK764R0-75C

Contextual Info: BUK764R0-75C N-channel TrenchMOS standard level FET Rev. 01 — 17 August 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package, using Philips Ultra High-Performance (UHP) automotive TrenchMOS technology.

k541

Abstract: K54-16 BUK541 BUK541-60A BUK541-60B
Contextual Info: Philips Components Data sheet status Prelim inary specification date of issue March 1991 B U K 5 4 1 - 6 0 A /B PowerMOS transistor Logic level FET PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack

k575

Abstract: 05 k575 rm3 transistor BUK575 MC 140 transistor 600 V logic level fet
Contextual Info: Philips Components Data sheet status Preiiminary specification date of issue March 1991 Replaces BUK545-50A/B B U K 5 7 5 - 6 0 A /B PowerMOS transistor Logic level FET SbE D PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode logic level fieid-effect power

Contextual Info: BUK762R0-40C N-channel TrenchMOS standard level FET Rev. 02 — 20 August 2007 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using Philips Ultra High-Performance Automotive (UHP) TrenchMOS technology.