PHILIPS 220 UF Search Results

TDA8589BJ

Abstract: TDA8588BJ TDA8588B TDA8589J TDA8588AJ TDA8588 tda8589b philips speakers tweeter 440 ac voltage regulator TDA8589AJ
Contextual Info: DATA SHEET TDA8589J; TDA8589xJ I2C-bus controlled 4 45 Watt power amplifier and multiple voltage regulator Product specication 2004 Feb 24 Philips Semiconductors Product specication I2C-bus controlled 4 45 Watt power amplier and multiple voltage regulator

BUK7518-30

Abstract: PHP55N03T
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance

Contextual Info: TDA8947J 4 通道音频放大器 Rev. 02 — 2005 年 6 月 16 日 产品数据表 1. 简介 TDA8947J 包含四个相同的音频功率放大器。 TDA8947J 可以用作：四个固定增益为 26 dB 的单端 SE 通道，固定增益为 32 dB 的桥接式负载 (BTL) 双通道，或 SE 双通道 （增

philips uaa series

Abstract: UF89 Uf 89 SERIE MS1 UAA 1001
Contextual Info: P H IL IP S UF 89 P ENTODE with variable mutual conductance for use as H.F. or I.P. amplifier PENTHODE à pente variable pour utilisation comme am­ plificatrice H.F. ou M . P. P ENTODE mit veränderlicher Steilheit zur Verwendung als HP- oder ZF-Verstärker

7518

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology. The device

BUK9518-30

Abstract: BUK9618-30
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology.

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology.

7518

Abstract: BUK7518-30 PHB55N03T
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology. The device

BUK7518-30

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance

BUK9518-30

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has

BUK95180-100A

Abstract: BUK96180-100A
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features

SMD Transistor Marking Code 335

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology. The device

PHP55N04LT

Abstract: PHB55N04LT PHD55N04LT
Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor Logic level FET FEATURES PHP55N04LT, PHB55N04LT PHD55N04LT SYMBOL • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance • Logic level compatible

PHB55N03LT

Abstract: PHD55N03LT PHP55N03LT
Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor Logic level FET FEATURES PHP55N03LT, PHB55N03LT PHD55N03LT SYMBOL • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance • Logic level compatible

marking code 38 SMD Transistor

Abstract: smd diode marking 2v SMD TRANSISTOR MARKING code TJ transistor smd code marking tm transistor smd code marking nc g SMD footprint design TRANSISTOR SMD catalog transistor smd marking 457 PHP55N03LT
Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor Logic level FET FEATURES PHP55N03LT, PHB55N03LT PHD55N03LT SYMBOL • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance • Logic level compatible

TRANSISTOR SMD MARKING CODE w2

Abstract: smd TRANSISTOR code marking w2 marking code C1H SMD circuit diagram of philips PC satellite receiver marking code C1H mmic lc oscillator 30ghz shf schematic circuit 6 pin TRANSISTOR SMD CODE PA GSM intercom circuit diagram vlf metal detector schematic murata smd inductors marking codes
Contextual Info: Appendix RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors Philips Semiconductors RF Manual 5th edition APPENDIX Product and design manual for RF Products  Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright

Header 8x2

Abstract: 742-08-3-103-J-XX 93CS56L PLX PCI9054 PCI9054-PQFP176 PCICONUNV BMC-30 1N4001 FA-365 LA12
Contextual Info: 1 2 3 4 5 6 3V3 NOT MOUNTED ES1 WORKAROUND Philips Semiconductors A D4 1N4001 3V3 D5 1N4001 D6 1N4001 C6 0.1 uF C2 0.1 uF C7 0.1 uF C3 0.1 uF C8 0.1 uF C4 0.1 uF C9 0.1 uF C5 0.1 uF C10 0.1 uF 0.1 uF A + C77 C1 12 MHz/3.3 V F316-0257 R2 3V3 DP1 DM1 OC1_N/VBUS

SOD124

Abstract: viper 171 TOPSWITCH BZG142 BZG142-68 viper flyback transformer Marking STMicroelectronics zener diode philips zener diode IEC 60060-1 Marking STMicroelectronics surface zener diode
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D168 BZG142 SMA ZenBlock; zener with integrated blocking diode Product specification Supersedes data of 2001 Apr 17 2001 Aug 20 Philips Semiconductors Product specification SMA ZenBlock; zener with integrated blocking diode

M3D462

Abstract: IEC 60060-1 starplug philips
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D462 BZG142 SMA ZenBlock; zener with integrated blocking diode Product specification Supersedes data of 2000 Dec 19 2001 Apr 17 Philips Semiconductors Product specification SMA ZenBlock; zener with integrated blocking diode

BLC5G22LS-100

Abstract: BLC5G22-100 LDMOS LDMOS Technology for RF Power Amplifiers BLC5G22 metallization LDMOS digital BLF4G22-100 ldmos pa driver BLF5G22-180
Contextual Info: 5th Generation LDMOS Philips’ 0.4 µm technology for base station RF PAs sets the standard in W-CDMA amplifier efficiency For RF power amplifiers PAs and base station manufacturers, our 5th generation LDMOS technology is a major advance. This technology offers key advantages for

BUK7514-30

Abstract: PHP69N03T
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance

BUK9514-30

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has

BUK7505-30A

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology which features very low on-state resistance. It is

elco capacitor uf

Abstract: DBS13P TDA1561Q
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TDA1561Q 2 x 23 W car radio power amplifier Preliminary specification Supersedes data of September 1991 File under Integrated Circuits, IC01 Philips Semiconductors 1995 May 08 Philips Semiconductors Preliminary specification