PHEMT TRANSISTOR LP6836 Search Results

LP6836P70-3

Abstract: LP6836P70-1 LP6836-P70-1 LP6836P70 MIL-HDBK-263 pHEMT transistor 360
Contextual Info: LP6836P70 PACKAGED MEDIUM POWER PHEMT • FEATURES ♦ 23 dBm Output Power at 1-dB Compression at 15 GHz ♦ 11.5 dB Power Gain at 15 GHz ♦ 50% Power-Added Efficiency • DESCRIPTION AND APPLICATIONS The LP6836P70 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility

pHEMT transistor 360

Abstract: LP6836 MIL-HDBK-263
Contextual Info: Filtronic LP6836 Medium Power PHEMT Solid State DRAIN BOND PAD FEATURES • • • • +25 dBm Typical Power at 18 GHz 9.5 dB Typical Power Gain at 18 GHz Low Intermodulation Distortion 55% Power-Added-Efficiency at 18 GHz SOURCE BOND PAD x2 GATE BOND PAD

Contextual Info: LP6836SOT343 PACKAGED MEDIUM POWER PHEMT • FEATURES ♦ 0.5 dB Noise Figure at 2 GHz ♦ 19 dBm P-1dB 2 GHz, 19 dBm at 6 GHz ♦ 20 dB Power Gain at 2 GHz, 10 dB at 6 GHz ♦ 70% Power-Added-Efficiency • DESCRIPTION AND APPLICATIONS The LP6836SOT343 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility

LP6836

Abstract: LP6836P70 LP6836SOT343 MIL-HDBK-263 RF TRANSISTOR 2GHZ
Contextual Info: PRELIMINARY DATA SHEET LP6836SOT343 PACKAGED MEDIUM POWER PHEMT • FEATURES ♦ 0.5 dB Noise Figure at 2 GHz ♦ 19 dBm P-1dB 2 GHz, 19 dBm at 6 GHz ♦ 19 dB Power Gain at 2 GHz, 8 dB at 6 GHz ♦ 70% Power-Added-Efficiency • DESCRIPTION AND APPLICATIONS

LP6836

Abstract: LP6836SOT343 MIL-HDBK-263 RF TRANSISTOR 2GHZ pHEMT transistor 360
Contextual Info: PRELIMINARY DATA SHEET LP6836SOT343 PACKAGED MEDIUM POWER PHEMT • FEATURES ♦ 0.5 dB Noise Figure at 2 GHz ♦ 19 dBm P-1dB 2 GHz, 19 dBm at 6 GHz ♦ 20 dB Power Gain at 2 GHz, 10 dB at 6 GHz ♦ 70% Power-Added-Efficiency • DESCRIPTION AND APPLICATIONS

pHEMT transistor LP6836

Abstract: LP6836 LP6836P100 filtronic Solid State
Contextual Info: Filtronic LP6836P100 Packaged 0.25W Power PHEMT Solid State FEATURES • • • • • GATE +24.5 dBm Typical Power at 15 GHz 12 dB Typical Power Gain at 15 GHz Low Intermodulation Distortion 55% Power-Added-Efficiency Color-coded by IDSS range SOURCE DRAIN

MIL-STD-1686

Abstract: LP6836 MIL-HDBK-263 pHEMT transistor LP6836 high power transistor s-parameters
Contextual Info: LP6836 MEDIUM POWER PHEMT • DRAIN BOND PAD FEATURES ♦ 25 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 55% Power-Added Efficiency SOURCE BOND PAD 2x GATE BOND PAD • DIE SIZE: 14.2X13.0 mils (360x330 µm) DIE THICKNESS: 3.9 mils (100 µm)

LP6836-P70-1

Abstract: LP6836P70-1 pHEMT transistor LP6836 filtronic Solid State LP6836P70 LP6836 LP6836P70 LP6836-P70-2 LP6836-P70-3 LP6836P70-3
Contextual Info: Filtronic LP6836P70 PACKAGED MEDIUM POWER PHEMT Solid State FEATURES • • • • • SOURCE +23.0 dBm Typical Power at 15 GHz 11.5 dB Typical Power Gain at 15 GHz Low Intermodulation Distortion 50% Power-Added-Efficiency Color-coded by IDSS range DRAIN