PHEMT MARKING CODE B Search Results

transistor SMD P2F

Abstract: FPD4000AF PHEMT marking code a pHEMT transistor 360 transistor STD P2F smd p2f transistor MIL-HDBK-263 transistor P2F ATC600S1R0 FET MARKING CODE
Contextual Info: PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website

PHEMT marking code a

Abstract: FET P2F pHEMT FET marking l transistor code p2f pHEMT FET marking A
Contextual Info: PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website

transistor SMD P2F

Abstract: smd p2f transistor atc600s FPD4000AF PHEMT marking code a smd marking code j6 smd p2f pHEMT FET marking A transistor STD P2F smd code marking C8
Contextual Info: FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website

transistor P2F

Abstract: p2f 250 PHEMT marking code a p2F 45 FPD2000AS MIL-HDBK-263 40 P1dB 2W transistor marking code 1325
Contextual Info: PRELIMINARY • PERFORMANCE 1.8 GHz ♦ 33 dBm Output Power (P1dB) ♦ 14 dB Power Gain (G1dB) ♦ 46 dBm Output IP3 ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available on Website ♦ Usable Gain to 4GHz

Contextual Info: PRELIMINARY • PERFORMANCE 1.8 GHz ♦ 33 dBm Output Power (P1dB) ♦ 14 dB Power Gain (G1dB) ♦ 46 dBm Output IP3 ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available ♦ Usable Gain to 4GHz • DESCRIPTION AND APPLICATIONS

transistor SMD P1f

Abstract: R04003 A114 A115 FPD1000AS JESD22 ATC600S5R6CW250 PHEMT marking code a ATC600S680 marking code P1F
Contextual Info: FPD1000AS 1W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available

transistor SMD P1f

Abstract: SMD Transistor p1f R04003 marking code 68W transistor BD 222 SMD MARKING P1F rci-0402 bd 222 smd TRANSISTOR SMD MARKING CODE mf ON MARKING P1F
Contextual Info: FPD1000AS 1W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available

ATC600S680JW250

Abstract: PC-SP-000010-006 AMP-103185-2 atc600s ATC600S5R T491B105M035AS7015 ATC600S2R0BW250 ATC600S680 ATC600S3R
Contextual Info: PRELIMINARY • PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available ♦ Usable Gain to 4GHz • DESCRIPTION AND APPLICATIONS

Transistor p1f

Abstract: MARKING P1F ON MARKING P1F p1f on P1F MARKING marking code P1F A114 A115 FPD1000AS FPD4000AS
Contextual Info: FPD4000AS 2.5W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 34.5 dBm Output Power (P1dB) ♦ 12 dB Power Gain (G1dB) ♦ 45 dBm Output IP3 ♦ 8V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available on Website

Contextual Info: TAT7469 CATV 75 Ω pHEMT Dual RF Amplifier Applications • • • • Edge QAM Gain Stage MDU Output RF Distribution Amplifiers Low Noise Optical TIA SOIC-8 Package Product Features Functional Block Diagram • 75 Ω, 50 MHz to 1200 MHz Bandwidth • RF Low Noise Figure: 3.2 dB to 1000 MHz

spf5043z

Abstract: MARKING SPF5043Z SPF-5043Z spf5043 spf-5043 SPF5043ZPCK1 TAJB104KLRF rfmd model marking code MARKING RFMD LL1608-FSR10J
Contextual Info: SPF5043Z SPF5043Z 50MHz to 4000MHz, GaAs pHEMT Low Noise MMIC Amplifier 50MHz to 4000MHz, GaAs pHEMT LOW NOISE MMIC AMPLIFIER Product Description Features The SPF5043Z is a high performance pHEMT MMIC LNA designed for operation from 50MHz to 4000MHz. The on-chip active bias network provides stable current over temperature and process threshold voltage variations. The SPF5043Z offers ultra-low noise figure and high linearity

spf-5043

Abstract: MARKING SPF5043Z spf-5043z SPF5043 spf5043z TAJB104KLRF SPF5043ZPCK1 SPF5043ZSR spf5043zsq
Contextual Info: SPF5043Z SPF5043Z 50MHz to 4000MHz, GaAs pHEMT Low Noise MMIC Amplifier 50MHz to 4000MHz, GaAs pHEMT LOW NOISE MMIC AMPLIFIER Product Description Features The SPF5043Z is a high performance pHEMT MMIC LNA designed for operation from 50MHz to 4000MHz. The on-chip active bias network provides stable current over temperature and process threshold voltage variations. The SPF5043Z offers ultra-low noise figure and high linearity

MARKING SPF5043Z

Abstract: SPF5043Z
Contextual Info: SPF5043Z SPF5043Z 50MHz to 4000MHz, GaAs pHEMT Low Noise MMIC Amplifier 50MHz to 4000MHz, GaAs pHEMT LOW NOISE MMIC AMPLIFIER Product Description Features The SPF5043Z is a high performance pHEMT MMIC LNA designed for operation from 50MHz to 4000MHz. The on-chip active bias network provides stable current over temperature and process threshold voltage variations. The SPF5043Z offers ultra-low noise figure and high linearity

CXE1089Z

Abstract: MMIC SOT 89 marking CODE 02 CXE-1089 1200MHZ lna CXE1089
Contextual Info: CXE-1089Z CXE-1089Z 50MHz to 1200MHz 75Ω pHEMT MMIC LNA 50MHz to 1200MHz 75Ω pHEMT MMIC LNA Package: SOT-89 Product Description Features RFMD’s CXE-1089Z is a high performance 75Ω pHEMT MMIC low-noise amplifier utilizing a Darlington configuration with active bias. The active

Contextual Info: CXE-1089Z CXE-1089Z 50MHz to 1200MHz 75Ω pHEMT MMIC LNA 50MHz to 1200MHz 75Ω pHEMT MMIC LNA Package: SOT-89 Product Description Features RFMD’s CXE-1089Z is a high performance 75Ω pHEMT MMIC low-noise amplifier utilizing a Darlington configuration with active bias. The active

MARKING CODE ACOM

Contextual Info: GaAs SP2T 2.7V High Power Switch DC - 3 GHz MASWSS0117 V 1.00 Features n n n n n n Functional Block Diagram Low Voltage Operation: 2.7 V High IP3: +56 dBm Low Insertion Loss: 0.30 dB at 1 GHz High Isolation: 25 dB at 1 GHz Miniature Package: SC70 6L 0.5 micron GaAs PHEMT Process

CXE1089

Abstract: CXE1089Z CXE-1089Z CXE1089PCK-EVB1 1008LS PHEMT marking code a
Contextual Info: CXE-1089Z CXE-1089Z 50MHz to 1200MHz 75Ω pHEMT MMIC LNA 50MHz to 1200MHz 75Ω pHEMT MMIC LNA Package: SOT-89 Product Description Features RFMD’s CXE-1089Z is a high performance 75Ω pHEMT MMIC low-noise amplifier utilizing a Darlington configuration with active bias. The active

TQL500

Contextual Info: TQL5000 PRELIMINARY DATASHEET WLAN PRODUCTS LNA for 5GHz UNII Band 802.11a Systems Vdd In Out Features 4.9 to 5.9 GHz Frequency Coverage Low Noise Figure Src High Gain Low Current: 8mA Typical @ 3V Product Description: 50-ohm Input and Output Match The TQL5000 is a low noise amplifier designed for 802.11a receive applications

Contextual Info: TQL5000 PRELIMINARY DATASHEET WLAN PRODUCTS LNA for5 GHz UNII Band 802.11a Systems Vdd In Out Features 4.9 to 5.9 GHz Frequency Coverage Low Noise Figure Src High Gain Low Current: 8mA Typical @ 3V Product Description: 50-ohm Input and Output Match The TQL5000 is a low noise amplifier designed for 802.11a receive applications

CXE-1089Z

Abstract: CXE1089Z CXE1089 1008LS marking code sirenza
Contextual Info: CXE-1089Z CXE-1089Z 50MHz to 1200MHz 75Ω pHEMT MMIC LNA 50MHz to 1200MHz 75Ω pHEMT MMIC LNA Package: SOT-89 Product Description Features RFMD’s CXE-1089Z is a high performance 75Ω pHEMT MMIC low-noise amplifier utilizing a Darlington configuration with active bias. The active

MARKING CODE ACOM

Abstract: aCOM marking M513 MASWSS0117 MASWSS0117SMB MASWSS0117TR MASWSS0117TR-3000 PHEMT marking code a
Contextual Info: GaAs SPDT 2.7 V High Power Switch DC - 3.0 GHz Features • • • • • • MASWSS0117 V2 Functional Block Diagram Low Voltage Operation: 2.7 V High IP3: +56 dBm Low Insertion Loss: 0.30 dB at 1 GHz High Isolation: 25 dB at 1 GHz SC70 6-Lead Package 0.5 micron GaAs PHEMT Process

MASWSS0204 marking

Abstract: MARKING CODE ACOM M513 MASWSS0117 MASWSS0204 MASWSS0204SMB MASWSS0204TR-3000 aCOM marking
Contextual Info: RoHS Compliant GaAs SPDT 2.7 V High Power Switch DC - 3.0 GHz Features • • • • • • • • • • MASWSS0204 V1 Functional Block Diagram Low Voltage Operation: 2.7 V High IP3: +56 dBm Low Insertion Loss: 0.30 dB at 1 GHz High Isolation: 25 dB at 1 GHz

Contextual Info: TAT7460B1A 75Ω 5V 50-2600 MHz RF Amplifier Applications • • • • • Distribution Amplifiers Multi-Dwelling Units Drop Amplifiers Single-ended Gain Block FTTH Receivers T SOT-89 Package Product Features • • • • • 1A 0B 46 7 AT Functional Block Diagram

Contextual Info: SXE1089Z SXE1089Z 0.05GHz to 3GHz, Cascadable pHEMT MMIC Amplifier 0.05GHz to 3GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SXE1089Z is a high performance pHEMT MMIC amplifier utilizing a patented self-bias Darlington topology housed in a lowcost, surface