PHEMT MARKING CODE A Search Results

transistor SMD P2F

Abstract: FPD4000AF PHEMT marking code a pHEMT transistor 360 transistor STD P2F smd p2f transistor MIL-HDBK-263 transistor P2F ATC600S1R0 FET MARKING CODE
Contextual Info: PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website

PHEMT marking code a

Abstract: FET P2F pHEMT FET marking l transistor code p2f pHEMT FET marking A
Contextual Info: PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website

transistor P2F

Abstract: p2f 250 PHEMT marking code a p2F 45 FPD2000AS MIL-HDBK-263 40 P1dB 2W transistor marking code 1325
Contextual Info: PRELIMINARY • PERFORMANCE 1.8 GHz ♦ 33 dBm Output Power (P1dB) ♦ 14 dB Power Gain (G1dB) ♦ 46 dBm Output IP3 ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available on Website ♦ Usable Gain to 4GHz

Transistor p1f

Abstract: MARKING P1F ON MARKING P1F p1f on P1F MARKING marking code P1F A114 A115 FPD1000AS FPD4000AS
Contextual Info: FPD4000AS 2.5W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 34.5 dBm Output Power (P1dB) ♦ 12 dB Power Gain (G1dB) ♦ 45 dBm Output IP3 ♦ 8V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available on Website

ultrasonic radar

Abstract: radar 77 ghz FMCW Radar infineon ACC_PLL_1 Dielectric Resonator Oscillator DRO radar mmic FMCW Radar Module Infineon 77 GHz VCO FMCW circuit infineon FMCW
Contextual Info: 77 GHz MPA for Car Radar Systems T626_MPA2_W Preliminary Data Sheet • • • • Operating Frequency: 76 - 77 GHz Output Power: + 13 dBm Input and Output matched to 50 Ω Application in Car Radar Systems ESD: Electrostatic discharge sensitive device, observe handling precautions!

AN01

Abstract: wireless switch transmit receive sc70 marking 06 rf
Contextual Info: FMM5317ZW Single Pole Double Throw Switch Wireless LAN / WiMAX Transmit / Receive Applications FEATURES • • • • • High Input P0.1dB: +34 dBm Typ Low Insertion Loss: 0.55 dB Typ at 2.4 GHz High Isolation: 25 dB Typ at 2.4 GHz GaAs PHEMT technology

EMM5329ZW

Abstract: V23133 marking code V3.V
Contextual Info: EMM5329ZW Single Pole Double Throw Switch 0.1 - 6 GHz Wireless LAN Transmit / Receive Applications FEATURES • • • • High Input P0.1dB: 33dBm Low Insertion Loss: 0.55 dB at 6 GHz GaAs PHEMT technology Small size and low-cost SC-70 / SOT363 package APPLICATIONS

Contextual Info: CXE-1089Z CXE-1089Z 50MHz to 1200MHz 75Ω pHEMT MMIC LNA 50MHz to 1200MHz 75Ω pHEMT MMIC LNA Package: SOT-89 Product Description Features RFMD’s CXE-1089Z is a high performance 75Ω pHEMT MMIC low-noise amplifier utilizing a Darlington configuration with active bias. The active

MARKING CODE ACOM

Abstract: aCOM marking M513 MASWSS0117 MASWSS0117SMB MASWSS0117TR MASWSS0117TR-3000 PHEMT marking code a
Contextual Info: GaAs SPDT 2.7 V High Power Switch DC - 3.0 GHz Features • • • • • • MASWSS0117 V2 Functional Block Diagram Low Voltage Operation: 2.7 V High IP3: +56 dBm Low Insertion Loss: 0.30 dB at 1 GHz High Isolation: 25 dB at 1 GHz SC70 6-Lead Package 0.5 micron GaAs PHEMT Process

MASWSS0204 marking

Abstract: MARKING CODE ACOM M513 MASWSS0117 MASWSS0204 MASWSS0204SMB MASWSS0204TR-3000 aCOM marking
Contextual Info: RoHS Compliant GaAs SPDT 2.7 V High Power Switch DC - 3.0 GHz Features • • • • • • • • • • MASWSS0204 V1 Functional Block Diagram Low Voltage Operation: 2.7 V High IP3: +56 dBm Low Insertion Loss: 0.30 dB at 1 GHz High Isolation: 25 dB at 1 GHz

Contextual Info: TAT7460B1A 75Ω 5V 50-2600 MHz RF Amplifier Applications • • • • • Distribution Amplifiers Multi-Dwelling Units Drop Amplifiers Single-ended Gain Block FTTH Receivers T SOT-89 Package Product Features • • • • • 1A 0B 46 7 AT Functional Block Diagram

CXG1407XR

Contextual Info: Switchable Step Capacitor CXG1407XR Description The CXG1407XR can be selected four kinds of built-in capacitor 1 to 8 pF , or two path. Sony JPHEMT GaAs process is utilized for low insertion loss, high linearity and high Q Factor capacitance with high accuracy.

Contextual Info: SP8T Antenna Switch for GSM/UMTS Dual Mode Handsets CXM3539XR Description The CXM3539XR is SP8T antenna switch for Triple bands GSM and Triple bands UMTS dual mode handsets. The CXM3539XR has a 1.8V CMOS compatible decoder. The Sony GaAs junction gate pHEMT JPHEMT MMIC process is used for low insertion loss and high linearity.

transistor marking code 1325

Abstract: R04003 ims pcb filtronic Solid State
Contextual Info: FPD1000AS Datasheet v2.4 1W PACKAGED POWER PHEMT FEATURES: • • • • • • • • PACKAGE 31 dBm Output Power P1dB @1.8GHz 15 dB Power Gain (G1dB) @ 1.8GHz 43 dBm Output IP3 -42 dBc WCDMA ACPR at 21 dBm PCH 10V Operation 50% Power-Added Efficiency

12M05019A73

Contextual Info: TQP4M3019 Data Sheet SP3T High Power 2.6V 2x2 mm CDMA Antenna Switch Functional Block Diagram Features • • • • • • • • • • • Product Description • TriQuint’s TQP4M3019 is a high power antenna switch in a single pole three throw SP3T configuration. The die utilizes TriQuint’s PHEMT MMIC

12M05019A73

Contextual Info: TQP4M3019 Data Sheet SP3T High Power 2.6V 2x2 mm CDMA Antenna Switch Functional Block Diagram Features • • • • • • • • • • • Product Description pHEMT GaAs MMIC Die Excellent Cross-Modulation Performance 108 dBm Typ @Cellular 106 dBm@AWS

ATF-54143-TR1G

Abstract: l0746 A004R ATF-54143 C0159 ATF-54143 application notes transistor c4 5.8 ghz amplifier 10w
Contextual Info: ATF-54143 Low Noise Enhancement Mode ­Pseudomorphic HEMT in a ­Surface Mount Plastic Package Data Sheet Description Features Avago Technologies’ ATF‑54143 is a high dynamic range, low noise, E-PHEMT housed in a 4‑lead SC-70 SOT‑343 surface mount plastic package.

FPD200P70

Abstract: transistor marking code 1325 RO29 "IPC 1752" gold L130
Contextual Info: FPD200P70 Data sheet v4.0 HIGH FREQUENCY PACKAGED PHEMT FEATURES: • • • • • • PACKAGE 20 dBm Output Power P1dB 17 dB Gain at 5.8 GHz 0.7 dB Noise Figure at 5.8 GHz 30 dBm Output IP3 45% Power-Added Efficiency Useable Gain to 26 GHz RoHS 9 GENERAL DESCRIPTION:

Contextual Info: SP4T + SP5T Antenna Switch Module for GSM/UMTS/CDMA/LTE Multi-mode CXM3580UR Description The CXM3580UR is a SP4T+ SP5T antenna switch module for GSM/UMTS/CDMA /LTE multi-mode handset. The CXM3580UR has a built-in dual low pass filter and a +1.8 V CMOS compatible decoder.

M3580

Contextual Info: SP4T + SP5T Antenna Switch Module for GSM/UMTS/CDMA/LTE Multi-mode CXM3580UR Description The CXM3580UR is a SP4T+ SP5T antenna switch module for GSM/UMTS/CDMA /LTE multi-mode handset. The CXM3580UR has a built-in dual low pass filter and a +1.8 V CMOS compatible decoder.

RO4350

Abstract: A004R MGA-412P8 MGA-412P8-BLKG MGA-412P8-TR1G MGA-412P8-TR2G mga- lpcc 25
Contextual Info: MGA-412P8 GaAs Enhancement-mode pHEMT Power Amplifier optimized for IEEE 802.11b/g applications Data Sheet Description Features Avago Technologies’s MGA-412P8 linear power amplifier is designed for applications in the 1.7-3 GHz frequency range. The amplifier is optimized for

01248

Contextual Info: CFH 400 Preliminary Datasheet Low-Noise, High-Linearity Packaged pHEMT FET Description: The CFH 400 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications to 4 GHz such as PCS CDMA and

Contextual Info: SP10T Antenna Switch Module 6TRx/2Tx/2Rx CXM3582UR Description The CXM3582UR is a SP10T antenna switch module for GSM/UMTS/CDMA/LTE multi-mode handset. The CXM3582UR has a built-in dual low pass filter and a +1.8 V CMOS compatible decoder. The Sony GaAs junction gate pHEMT JPHEMT MMIC process is used for low insertion loss and high linearity.

CXM3582

Contextual Info: SP10T Antenna Switch Module 6TRx/2Tx/2Rx CXM3582UR Description The CXM3582UR is a SP10T antenna switch module for GSM/UMTS/CDMA/LTE multi-mode handset. The CXM3582UR has a built-in dual low pass filter and a +1.8 V CMOS compatible decoder. The Sony GaAs junction gate pHEMT JPHEMT MMIC process is used for low insertion loss and high linearity.