PHEMT MARKING CODE A Search Results

transistor SMD P2F

Abstract: FPD4000AF PHEMT marking code a pHEMT transistor 360 transistor STD P2F smd p2f transistor MIL-HDBK-263 transistor P2F ATC600S1R0 FET MARKING CODE
Contextual Info: PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website

PHEMT marking code a

Abstract: FET P2F pHEMT FET marking l transistor code p2f pHEMT FET marking A
Contextual Info: PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website

transistor P2F

Abstract: p2f 250 PHEMT marking code a p2F 45 FPD2000AS MIL-HDBK-263 40 P1dB 2W transistor marking code 1325
Contextual Info: PRELIMINARY • PERFORMANCE 1.8 GHz ♦ 33 dBm Output Power (P1dB) ♦ 14 dB Power Gain (G1dB) ♦ 46 dBm Output IP3 ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available on Website ♦ Usable Gain to 4GHz

P3F filtronic

Abstract: pHEMT FET marking A FPD10000AF MIL-HDBK-263 PHEMT marking code a PHEMT marking code B
Contextual Info: PRELIMINARY FPD10000AF 10W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 40 dBm Output Power (P1dB) ♦ 11 dB Power Gain (G1dB) ♦ -44 dBc WCDMA ACPR at 30 dBm output power ♦ 180 to 300 mA typical quiescent current (IDQ) ♦ 55% Power-Added Efficiency

Contextual Info: PRELIMINARY • PERFORMANCE 1.8 GHz ♦ 33 dBm Output Power (P1dB) ♦ 14 dB Power Gain (G1dB) ♦ 46 dBm Output IP3 ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available ♦ Usable Gain to 4GHz • DESCRIPTION AND APPLICATIONS

transistor SMD P1f

Abstract: R04003 A114 A115 FPD1000AS JESD22 ATC600S5R6CW250 PHEMT marking code a ATC600S680 marking code P1F
Contextual Info: FPD1000AS 1W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available

ATC600S680JW250

Abstract: PC-SP-000010-006 AMP-103185-2 atc600s ATC600S5R T491B105M035AS7015 ATC600S2R0BW250 ATC600S680 ATC600S3R
Contextual Info: PRELIMINARY • PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available ♦ Usable Gain to 4GHz • DESCRIPTION AND APPLICATIONS

Transistor p1f

Abstract: MARKING P1F ON MARKING P1F p1f on P1F MARKING marking code P1F A114 A115 FPD1000AS FPD4000AS
Contextual Info: FPD4000AS 2.5W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 34.5 dBm Output Power (P1dB) ♦ 12 dB Power Gain (G1dB) ♦ 45 dBm Output IP3 ♦ 8V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available on Website

FPD7612P70

Abstract: PHEMT marking code a HEMT marking P InP transistor HEMT MIL-HDBK-263 Gan hemt transistor RFMD rfmd model marking code
Contextual Info: FPD7612P70 FPD7612P70 Low Noise High Frequency Packaged pHEMT LOW NOISE HIGH FREQUENCY PACKAGED pHEMT RoHS Compliant Package: P70 Product Description Features The FPD7612P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimized for low noise, high frequency applications.

Contextual Info: TAT7469 CATV 75 Ω pHEMT Dual RF Amplifier Applications • • • • Edge QAM Gain Stage MDU Output RF Distribution Amplifiers Low Noise Optical TIA SOIC-8 Package Product Features Functional Block Diagram • 75 Ω, 50 MHz to 1200 MHz Bandwidth • RF Low Noise Figure: 3.2 dB to 1000 MHz

ultrasonic radar

Abstract: radar 77 ghz FMCW Radar infineon ACC_PLL_1 Dielectric Resonator Oscillator DRO radar mmic FMCW Radar Module Infineon 77 GHz VCO FMCW circuit infineon FMCW
Contextual Info: 77 GHz MPA for Car Radar Systems T626_MPA2_W Preliminary Data Sheet • • • • Operating Frequency: 76 - 77 GHz Output Power: + 13 dBm Input and Output matched to 50 Ω Application in Car Radar Systems ESD: Electrostatic discharge sensitive device, observe handling precautions!

FMCW Radar

Abstract: infineon FMCW ultrasonic radar 77 GHz VCO fmcw generation radar 77 ghz FMCW Radar Module FMCW FMCW circuit VCO 77 GHZ
Contextual Info: 77 GHz VCO for Car Radar Systems T625_VCO2_W Preliminary Data Sheet • • • • Operating Frequency: 76 - 77 GHz Tuning Range > 1 GHz Output matched to 50 Ω Application in Car Radar Systems ESD: Electrostatic discharge sensitive device, observe handling precautions!

AN01

Abstract: wireless switch transmit receive sc70 marking 06 rf
Contextual Info: FMM5317ZW Single Pole Double Throw Switch Wireless LAN / WiMAX Transmit / Receive Applications FEATURES • • • • • High Input P0.1dB: +34 dBm Typ Low Insertion Loss: 0.55 dB Typ at 2.4 GHz High Isolation: 25 dB Typ at 2.4 GHz GaAs PHEMT technology

Contextual Info: FMS2031-001 FMS2031-001 10W GaAs pHEMT SPDT Switch 10W GaAs pHEMT SPDT SWITCH Package: 3mmx3mm QFN Product Description Features The FMS2031-001 is a 10W, Single-pole, Double-throw, SPDT GaAs pHEMT reflective antenna switch. The switch offers excellent power handling capability and harmonic performance. The FMS2031-001 is designed for use in WiMax, L-, S-, and Cband wireless applications and WLAN access points where high linearity switching

spf-5043

Abstract: MARKING SPF5043Z spf-5043z SPF5043 spf5043z TAJB104KLRF SPF5043ZPCK1 SPF5043ZSR spf5043zsq
Contextual Info: SPF5043Z SPF5043Z 50MHz to 4000MHz, GaAs pHEMT Low Noise MMIC Amplifier 50MHz to 4000MHz, GaAs pHEMT LOW NOISE MMIC AMPLIFIER Product Description Features The SPF5043Z is a high performance pHEMT MMIC LNA designed for operation from 50MHz to 4000MHz. The on-chip active bias network provides stable current over temperature and process threshold voltage variations. The SPF5043Z offers ultra-low noise figure and high linearity

MARKING SPF5043Z

Abstract: SPF5043Z
Contextual Info: SPF5043Z SPF5043Z 50MHz to 4000MHz, GaAs pHEMT Low Noise MMIC Amplifier 50MHz to 4000MHz, GaAs pHEMT LOW NOISE MMIC AMPLIFIER Product Description Features The SPF5043Z is a high performance pHEMT MMIC LNA designed for operation from 50MHz to 4000MHz. The on-chip active bias network provides stable current over temperature and process threshold voltage variations. The SPF5043Z offers ultra-low noise figure and high linearity

P 9806 AD

Contextual Info: FPD2000AS FPD2000AS 2W Packaged Power pHEMT 2W PACKAGED POWER pHEMT RoHS Compliant and Pb-Free Package: 4.4mmx3.8mm Product Description Features The FPD2000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , optimized for power

transistor Bc 542

Abstract: transistor bc 567
Contextual Info: FPD1000AS FPD1000AS 1W Packaged Power pHEMT 1W PACKAGED POWER pHEMT RoHS Compliant and Pb-Free Package: 4.4mmx3.8mm Product Description Features The FPD1000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , optimized for power

CXE1089Z

Abstract: MMIC SOT 89 marking CODE 02 CXE-1089 1200MHZ lna CXE1089
Contextual Info: CXE-1089Z CXE-1089Z 50MHz to 1200MHz 75Ω pHEMT MMIC LNA 50MHz to 1200MHz 75Ω pHEMT MMIC LNA Package: SOT-89 Product Description Features RFMD’s CXE-1089Z is a high performance 75Ω pHEMT MMIC low-noise amplifier utilizing a Darlington configuration with active bias. The active

Contextual Info: CXE-1089Z CXE-1089Z 50MHz to 1200MHz 75Ω pHEMT MMIC LNA 50MHz to 1200MHz 75Ω pHEMT MMIC LNA Package: SOT-89 Product Description Features RFMD’s CXE-1089Z is a high performance 75Ω pHEMT MMIC low-noise amplifier utilizing a Darlington configuration with active bias. The active

MARKING CODE ACOM

Contextual Info: GaAs SP2T 2.7V High Power Switch DC - 3 GHz MASWSS0117 V 1.00 Features n n n n n n Functional Block Diagram Low Voltage Operation: 2.7 V High IP3: +56 dBm Low Insertion Loss: 0.30 dB at 1 GHz High Isolation: 25 dB at 1 GHz Miniature Package: SC70 6L 0.5 micron GaAs PHEMT Process

TQL500

Contextual Info: TQL5000 PRELIMINARY DATASHEET WLAN PRODUCTS LNA for 5GHz UNII Band 802.11a Systems Vdd In Out Features 4.9 to 5.9 GHz Frequency Coverage Low Noise Figure Src High Gain Low Current: 8mA Typical @ 3V Product Description: 50-ohm Input and Output Match The TQL5000 is a low noise amplifier designed for 802.11a receive applications

Contextual Info: TQL5000 PRELIMINARY DATASHEET WLAN PRODUCTS LNA for5 GHz UNII Band 802.11a Systems Vdd In Out Features 4.9 to 5.9 GHz Frequency Coverage Low Noise Figure Src High Gain Low Current: 8mA Typical @ 3V Product Description: 50-ohm Input and Output Match The TQL5000 is a low noise amplifier designed for 802.11a receive applications

CXE-1089Z

Abstract: CXE1089Z CXE1089 1008LS marking code sirenza
Contextual Info: CXE-1089Z CXE-1089Z 50MHz to 1200MHz 75Ω pHEMT MMIC LNA 50MHz to 1200MHz 75Ω pHEMT MMIC LNA Package: SOT-89 Product Description Features RFMD’s CXE-1089Z is a high performance 75Ω pHEMT MMIC low-noise amplifier utilizing a Darlington configuration with active bias. The active