PH-200 DIODE Search Results
PH-200 DIODE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
PH-200 DIODE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
brx49
Abstract: Thyristors BRX49 BRX44/PH
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2n881/ph2n2329brx44/phbrx45/ph+6 | |
VM716N8Contextual Info: ^ ^ V T C In c. Value the CustomerTU FEATURES • High Performance - Read Gain = 200 - 300 V/V Typical - Input Noise = 0.65nV/VHz max - Head Inductance Range = 0 .2 -5 pH 0.5 pH typical - Write Current Range 5 - 35 mA - Low Input Capacitance = 12 pF typical |
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vm716065nv/vhzvm7162vm7164+4 | |
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Contextual Info: VTC Inc. Value the Customer FEATURES • • • • • • • • • • • High Performance - Read Gain = 200 - 300 V /V Typical - Input Noise = 0.65nV/VHz Maxim um - Head Inductance Range = 0 . 2 - 5 pH 0.5 pH typical - W rite Current Range 5 - 35 mA |
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65nv/vhz | |
VM VTCContextual Info: V T C INC b4E D V TC Inc. Value the Customer FEATURES • TWO/THREE TERMINAL & SERVO PREAMPLIFIERS • • • • • • • • • • High Performance - Read G ain = 200 - 300 V /V Typical - Input N oise = 0.65nV/VFiz Maxim um - Head Inductance R ange = 0 . 2 - 5 pH 0.5 pH typical |
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65nv/vfiz100mvvm vtc | |
VM716N8Contextual Info: b4E T C INC m Mm D V TC Inc. Value th e C ustom er TWO/THREE TERMINAL & SERVO PREAMPLIFIERS FEA TU R ES • High Performance - Read Gain = 200 - 300 V/V Typical - Input Noise = 0.65nV/VHz max - Head Inductance Range = 0 . 2 - 5 pH 0.5 pH typical - Write Current Range 5 - 35 mA |
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0003t51vm716065nv/vhzvm7162+5 | |
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Contextual Info: mamor ME701202 ME701602 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Tht&G-PhäSG Diode Bridge Modules 20 Amperes/1200-1600 Volts Description: Powerex Three-Phase Diode Bridge Modules are designed for use in three phase bridge applica |
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me701202me701602amperes/1200-1600677att+2 | |
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Contextual Info: Micnosemi H m m Santa Ana, CA m 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 Progress Pow ered b y Technology MSAEZ33N20A MSAFZ33N20A Features 200 Volts Ultrafast rectifier in parallel with the body diode (M SAE type only) |
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msaez33n20amsafz33n20a | |
ID100
Abstract: MSAFX50N20A
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msafx50n20aid100 | |
CHN 950
Abstract: chn 714
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msaer30n20amsafr30n20achn 950chn 714 | |
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Contextual Info: H B • S a n ta A na , C A ■ 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX50N20A Features 200 Volts Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability |
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msafx50n20a20vdc | |
ID100
Abstract: MSAFX50N20A
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msafx50n20aid100 | |
PCIH47F300A1
Abstract: positronic datasheet PCIH47F300A1 Fuse RH A4 2A 250V PCI174-1022 PCIH47M400A1 Rittal positronic connector 3686135 200w dc applications 175W psu
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0-264v6-72v8-32vpcih47f300a1+9 | |
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Contextual Info: MAY s ; VM3200 VTC Inc. 3.3-VOLT, TWO-TERMINAL, THIN-FILM MIG HEAD, READ/WRITE PREAMPLIFIER PRELIMINARY CONNECTION DIAGRAMS FEATURES • High Performance - Read Gain = 300, 200 oM 50 V/V - Input Noise = 0.55nV/VHz Typical - Head Inductance Range = 0 . 2 - 5 pH |
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vm320055nv/vhz | |
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Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAER30N20A MSAFR30N20A Features • • • • • • • 200 Volts 30 Amps 85 mΩ Ω Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure |
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msaer30n20amsafr30n20a | |
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ID100
Abstract: MSAEZ33N20A MSAFZ33N20A
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msaez33n20amsafz33n20aid100 | |
ID100
Abstract: MSAER30N20A MSAFR30N20A
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msaer30n20amsafr30n20aconti100id100 | |
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Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAEZ33N20A MSAFZ33N20A Features • • • • • • • 200 Volts 33 Amps 70 mΩ Ω Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure |
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msaez33n20amsafz33n20a | |
ID100
Abstract: MSAEI30N20A MSAFI30N20A
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msaei30n20amsafi30n20aid100 | |
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Contextual Info: Microsemi m m m Santa Ana, CA m 2830 S. F a irvie w St. Santa Ana, C A 92704 PH: 714 979-8220 FAX: (714) 966-5256 Progress Powered b y Technology MSAEZ33N20A MSAFZ33N20A Features 200 Volts 33 Amps Ultrafast rectifier in parallel with the body diode (M SAE type only) |
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msaez33n20amsafz33n20a | |
12 volt dc to 220 volt ac inverter schematic
Abstract: SCR Gate Drive for ac to dc converter IGBT based voltage source converter three phase SCR gate drive circuit 12 volt dc to 220 volt ac inverter 150A SCR simple 3 phase INVERTER schematic 220 volt ac to 12 volt dc inverter SCR Inverter datasheet dc to ac inverter by scr
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pp150t120-0212 volt dc to 220 volt ac inverter schematicscr gate drive for ac to dc converterigbt based voltage source converter+7 | |
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Contextual Info: Micmsemi H m m Santa Ana, CA m Pro gre ss Pow ered by Technology 2830 S. Fairview S t Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAEI30N20A MSAFI30N20A Features • • • • • • • 200 Volts 30 Amps 85 mQ Ultrafast rectifier in parallel with the body diode (MSAE type only) |
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msaei30n20amsafi30n20a0dd43 | |
D475Contextual Info: DSS 2X101-015A Advanced Technical Information Power Schottky Rectifier * RSM RRM V V 150 150 Symbol -N - Type l* R Test Conditions 150 100 200 A A A 1200 A l^ = tbd A; L = 180 pH; TVJ = 25°C; non repetitive tbd mJ VA=1.5 • VRHMtyp.; f=10 kHz; repetitive |
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2x101-015a2x100ot-2272x101-015+3 | |
TUNABLE FILTER uhf
Abstract: types of RF transceiver FM tuning capacitor 225-400MHz TRANSMIT CUSTOM DIODE TUNABLE rf FILTER A778
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200-400mhz225-400mhz30dbm200khz+9 | |
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Contextual Info: PLASTIC SIDELOOKER PAIR yPTOELECI QPE1113 W IO W » • : 08 DIA. .08 DIA. .050 1.27 .050 (1.27) .062 DIA. .062 DIA. T .200 (5.08) EM ITTER C O LLE CTO R h .020 (0.51) SQ NOM 100^(2.54) .020 (0.51) .020 (0.51) - . 1 7 5 (4 .44) - —.175 (4.44)— PH O TO TRANSISTOR |
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qpe1113st2171940nm | |