nec v80
Abstract: NEC Ga FET marking L HS350 NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.4 dB TYP., Ga = 17.5 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package
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NE3509M04
NE3509M04-A
NE3509M04-T2
NE3509M04-T2-A
NE3509M04-T2B
NE3509M04-T2B-A
nec v80
NEC Ga FET marking L
HS350
NE3509M04
NE3509M04-A
NE3509M04-T2
NE3509M04-T2-A
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marking v80
Abstract: transistor marking v80 ghz ne3509m04 NE3509M04-A m04 marking NE3509 HS350
Contextual Info: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.4 dB TYP., Ga = 17.5 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package
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NE3509M04
NE3509M04
NE3509M04-T2
NE3509M04-A
NE3509M04-T2-A
NE3509M04-T2B-A
PG10608EJ02V0DS
marking v80
transistor marking v80 ghz
m04 marking
NE3509
HS350
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NE3509M04. S2P
Abstract: NE3509M04 NE3509M04-T2 HS350 NE3509M04-A NE3509M04-T2-A transistor marking v80 ghz
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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