PF 1014 Search Results

leistungstransistoren

Contextual Info: Transistorfassungen Supports pour transistors Ø 0,7 0,75 Transistor Sockets 3,9 7,5 3 1,6 Ø 1,8 PF 54 R 1,5 7,4 PF 53 Ø 1,55 PF 58/23 Ø 1,35 R 1,5 Ø 0,5 45° 45° 5,84 5,08 45° 1,05 1,05 Ø 0,7 3 4,2 4,2 2,25 2,25 1,4 Ø∅1,4 1,1 Ø∅1,1 1,5 Ø∅1,5

Contextual Info: Nominal Capacitor Binary Mapping for CTST570 & CTST571 Nominal Capacitor Binary Mapping for AZT70 & AZT71 11-bit Control Word Capacitor bank bank Capacitor →→→ Capvalue value for Cap for respective bit pF respective bit (pF) →→→ Chi (6.4pF - 19.2pF)

Mys 99 178

Abstract: MYS 99 cj1w-cort21 NT31C-ST143-Ev3 MYS 99 133 E5CS-R1KJ 8203-M TL-X1R 4503m st MYS 99 102
Contextual Info: Product Code Description AA994896G 537.019.200 E2A 7033A 02A-M18KS08-WP-C1 5M OMC PF 1234C 11PFA PF 1235A 14PFA VAP 1001D 1VAP-1W VAP21001C 1VAP2-1 VAP21004H 1VAP2-2 VAP21015C 1VAP2-6 VE 2001G 1VE-10CA-11 VE 2002E 1VE-10CA-12 VE 2003C 1VE-10CA-13 VE 3001B

ABT244C

Contextual Info: 54ABT/74A B T16244C 16-Bit Buffer/ Line Driver with TRI-STATE Outputs Guaranteed output skew General Description Guaranteed m ultiple output sw itching specifications O utput sw itching specified fo r both 50 pF and 250 pF loads Guaranteed sim ultaneous sw itching noise level and

Contextual Info: wn e TEL INDUCTORS PRODUCTS INC. 13402 South 71 Highway/Grandview, MO 64030/ 816 761-6314 TWX 910-777-7037 TOROIDAL INDUCTORS TYPE PS/PF/PFC/PSC WT. 1.5 0z n iF I X T U U 4-40 9 MG THRU HOLE STYLE NO FOOT PSC PS PFC WITH FOOT PF CORE NO. 59 CORE NO. 10 Recommended Frequency: Up to 50 KHz.

Contextual Info: This document was generated on 06/21/2012 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: 92318-1014 Active Overview: Description: Picoflex Picoflex® PF-50 IDT-Board-In Z-Style, 10 Circuits, 0.14m Length Documents: 3D Model Drawing PDF

Contextual Info: SEM ICONDUCTOR TO SH IBA TECHNICAL T L P 1 26 DATA TLP126 ISOLATION CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL cs Rs Capacitance Input to O utput Isolation Resistance TEST CONDITION Vg = 0, f = 1MHz Vg = 500V BVg TYP. MAX. UNIT 0.8 — pF 1014 —

CMC-016

Abstract: 5R0-273 151225
Contextual Info: Tecate Group SURFACE MOUNT MULTILAYER CERAMIC TYPE CMC PART NUMBERING Part Number Example: CMC-016/104KX0603TF CMC - 016 / Rated DC Voltage Type 104 K X Capacitance Code pF * Tolerance Code Dielectric Material* 0603 T F Case Size Package Code* RoHs Compliant

Contextual Info: HVD147 Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0392-0100 Rev.1.00 Sep.08.2004 Features • • • • Adopting the trench structure improves low capacitance. C = 0.31 pF max Low forward resistance. (rf = 1.5 Ω max) Low operation current.

HVL144AM

Contextual Info: HVL144AM Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0199-0100Z Rev.1.00 Mar.25.2004 Features • • • • Adopting the trench structure improves low capacitance. C = 0.43 pF max Low forward resistance. (rf = 1.8 Ω max) Low operation current.

0R530

Abstract: Tecate CMC-2K0 Tecate Group 10-1-471
Contextual Info: Tecate Group SURFACE MOUNT MULTILAYER CERAMIC TYPE CMC PART NUMBERING Part Number Example: CMC-016/104KX0603TF CMC Type - 016 / Rated DC Voltage 104 K X Capacitance Code pF * Tolerance Code Dielectric Material* 0603 T F Case Size Package Code* RoHs Compliant

CMC-016

Abstract: D 471 tecate cmc 226 capacitor 476 capacitor
Contextual Info: Tecate Group Ceramic Surface Mount Capacitors TYPE CMC SURFACE MOUNT MULTILAYER CERAMIC PART NUMBERING Part Number Example: CMC-016/104KX0603TF CMC - 016 / Rated DC Voltage Type 104 K X Capacitance Code pF * Tolerance Code Dielectric Material* 0603 T F Case Size

Contextual Info: Tecate Group Ceramic Surface Mount Capacitors TYPE CMC SURFACE MOUNT MULTILAYER CERAMIC PART NUMBERING Part Number Example: CMC-016/104KX0603TF CMC Type - 016 / Rated DC Voltage 104 K X Capacitance Code pF * Tolerance Code Dielectric Material* 0603 T F Case Size

Contextual Info: Tecate Group Ceramic Surface Mount Capacitors TYPE CMC SURFACE MOUNT MULTILAYER CERAMIC PART NUMBERING Part Number Example: CMC-016/104KX0603TF CMC Type - 016 / Rated DC Voltage 104 K X Capacitance Code pF * Tolerance Code Dielectric Material* 0603 T F Case Size

HVD144A

Abstract: PUSF0002ZB-A diode mark T7
Contextual Info: HVD144A Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0429-0200 Rev.2.00 Sep 21, 2005 Features • • • • Adopting the trench structure improves low capacitance. C = 0.43 pF max Low forward resistance. (rf = 1.80 Ω max) Low operation current.

Contextual Info: HVD144A Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0429-0200 Rev.2.00 Sep 21, 2005 Features • • • • Adopting the trench structure improves low capacitance. C = 0.43 pF max Low forward resistance. (rf = 1.80 Ω max) Low operation current.

Contextual Info: HVL147M Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0394-0100 Rev.1.00 Sep 08, 2004 Features • • • • Adopting the trench structure improves low capacitance. C = 0.31 pF max Low forward resistance. (rf = 1.5 Ω max) Low operation current.

HVD135

Abstract: DSA003645
Contextual Info: HVD135 Silicon Epitaxial Trench Pin Diode for Antenna Switching ADE-208-948 Z Rev. 0 Jul. 2000 Features • Adopting the trench structure improves low capacitance.(C = 0.6 pF max) • Low forward resistance. (rf = 2.0 Ω max) • Low operation current.

Contextual Info: HVL144A Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0433-0200 Rev.2.00 Jan 13, 2006 Features • • • • Adopting the trench structure improves low capacitance. C = 0.43 pF max Low forward resistance. (rf = 1.8 Ω max) Low operation current.

Contextual Info: HVL147 Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0393-0300 Rev.3.00 Jan 13, 2006 Features • • • • Adopting the trench structure improves low capacitance. C = 0.31 pF max Low forward resistance. (rf = 1.5 Ω max) Low operation current.

Contextual Info: HVD138A Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0426-0100 Previous: ADE-208-1589 Rev.1.00 Dec 07, 2004 Features • • • • Adopting the trench structure improves low capacitance.(C = 0.85 pF max) Low forward resistance. (rf = 1.1 Ω max)

Contextual Info: HVL144A Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0433-0300 Rev.3.00 Jul 14, 2006 Features • • • • Adopting the trench structure improves low capacitance. C = 0.43 pF max Low forward resistance. (rf = 1.8 Ω max) Low operation current.

HVD144A

Abstract: MARK T7
Contextual Info: HVD144A Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0429-0100 Previous: ADE-208-1591 Rev.1.00 Nov 26, 2004 Features • • • • Adopting the trench structure improves low capacitance.(C = 0.43 pF max) Low forward resistance. (rf = 1.80 Ω max)

HVL147M

Abstract: PUSF0002ZA-A
Contextual Info: HVL147M Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0394-0300 Rev.3.00 Jan 20, 2006 Features • • • • Adopting the trench structure improves low capacitance. C = 0.31 pF max Low forward resistance. (rf = 1.5 Ω max) Low operation current.