PEPI C Search Results
PEPI C Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: MOE D • MOSSTlb 0D137Ö3 3 ■ A M I . . T - M 2 - 8 \ G ould AMI S ilic o n F ou n d ry A pproach Gould AMI is proud of the leadership position it occupies in today’s fast-paced world of process and technology. Our Silicon Foundry services and capabilities are truly world class. We pro |
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0D137Ã | |
Contextual Info: SK10GD12T4ET 3' F HI J:E -%2&'' ,.4& */'& 'B& /K/&1 Absolute Maximum Ratings Symbol Conditions IGBT C:DL 3M F HI J: 6: 3M F OQI J: 6:RS .B'( OHPP C OQ ; 3' F QP J: OI ; H5 ; V HP C 3M F OIP J: OP [' 3' F HI J: OI ; 3' F QP J: OH ; H5 ; 6:RSF T U 6:%,+ C: F WPP CX C7D Y OI CX |
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SK10GD12T4ET | |
TD 6905 S
Abstract: ci 7430 TD 6905
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1000PF, CJ6-J35= 350uH SI-30103 TD 6905 S ci 7430 TD 6905 | |
MC 2882
Abstract: 2SC2862 MC 342 transistor 210B MC 2871
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175MHÃ MC 2882 2SC2862 MC 342 transistor 210B MC 2871 | |
harris 6616Contextual Info: b3E D MSS1Ö7E 0 0 0 0 * 1 0 5 ROMs Honeywell 1ST * H 0 N 3 HONEYÜI ELL/ S S E C 2K x 8 RADIATION-HARDENED ROM HC6616 FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial1.2 im Process • Typical 45 ns Access Time • Total Dose Hardness through 1x106 rad(Si02 |
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HC6616 1x106 1x109 1x101 24-Lead HC6616/1 pin21 HC6616/2 harris 6616 | |
AAF40
Abstract: atechnology
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00QGM37 HC6616 1x10i4cnr2 1x109 0x10-9 1x1012rad AAF40 atechnology | |
883ctContextual Info: H O N E Y WE L L / S H o n 1SE D I S E C e y w 4551072 G O G O B a ì M | HC6167 e l l 16K x 1 RADIATION-HARDENED STATIC RAM FEATURES OTHER RADIATION • Fabricated with RICMOS Epitaxial 1.2 pm Process • Typical 140 ns Access Time • Total Dose Hardness through |
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HC6167 1x1014cnvz 1x109 1x101 1x10-® 20-pin 883ct | |
honeywell mramContextual Info: 52E D • 4SSlfl?2 - 0D00fl4D DBO ■ H0 N3 HONEYI i l EL L/ S S E C _ Honeywell Preliminary Military Products 16K x 1 NON-VOLATILE RAM HC7167 'T - 4 k '2 £ '0 £ ' FEATURES • Non-volatile and NDRO Non-destructive read out |
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0D00fl4D 1x106 1x1014N/cm2 1x101 1x106rad honeywell mram | |
harris 6616Contextual Info: Honeywell HC6616 Military Products Preliminary 2K x 8 RADIATION-HARDENED ROM FEATURES O TH ER R AD IATIO N • Typical 55 ns A ccess Tim e • Fabricated w ith RICMOS Epitaxial 1.2 |im Process • Low O perating Pow er • S ynchronous O peration • Total Dose H ardness through |
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HC6616 1x106 1x1014cm 1x109 harris 6616 | |
USE OF TRANSISTOR
Abstract: pepi c thermal transistor and or IC Ultrasonic pepi testing good or bad electronic components circuit TO-220FN pn junction diode structure shin-etsu Chemical
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Contextual Info: Technical information Back-thinned TDI-CCD Back-thinned TDI time delay integration -CCDs allow acquiring high S/N images even under low-light conditions during high-speed imaging and the like. TDI operation yields dramatically enhanced sensitivity by integrating the |
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individual53 B1201, KMPD9004E03 | |
socket g34 pinout
Abstract: smd marking WMM
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HC6664 1x10s 1x1014N/cm2 1x109 MIL-l-38535 36-LE 28-LEAD HC6364/1 socket g34 pinout smd marking WMM | |
HX6856Contextual Info: b3E » Honeywell 4551Ö72 OGODTTS S71 • H 0 N 3 Military Products HON E Y I i J E L L / S S E C Preliminary 32K X 8 RADIATION-HARDENED STATIC RAM-SOI HX6856 FEATURES RADIATION OTHER Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 urn Process |
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1x10s 1x101 HX6856 36-Lead 28-Lead HX6856/1 HX6856/2 HX6856 | |
Contextual Info: bBE D • MSS1Ô7S O O O O ^ HONEYÜI ELL/ S 24T « S E C Honeywell honb - 64K x 1 RADIATION-HARDENED STATIC RAM HC6464 FEATURES RADIATION • Fabricated using DESC approved QML 1.2nm RICMOS process • Total Dose Hardness through 1x10s rad Si02 |
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HC6464 24-Pin 1x10s 1x101 PIN23 | |
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Contextual Info: HONE YWEL L / S S E C 3ÖE D 4ssia?a ooddsms a H0 N3 '•■V Military Products 32K X Preliminary 8 RADIATION-HARDENED STATIC RAM HC6856 FEATURES RADIATION OTHER • Fabricated with RICMOS Bulk 0.8 nm Process • Total Dose Hardness through 1x106 rad Si02 |
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HC6856 1x106 1x101 1x109 256Kx | |
Contextual Info: b3E » • *4551072 DÜGOTbl 7^b ■H0N3 Honeywell 32K X 8 RADIATION-HARDENED STATIC RAM HC6856 FEATURES RADIATION OTHER ■ Fabricated with RICMOS IV Bulk 0.8 jim Process • Read/Write Cycle Times s 40 ns -55 to 125°C • Total Dose Hardness through 1x10s rad(Si02) |
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HC6856 1x10s 1x109 36-Lead 28-Lead HC6856/1 1E-10 S00049 | |
CMOSContextual Info: 1.0 m CMOS Process XC10 MIXED-SIGNAL FOUNDRY EXPERTS One Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The XC10 Series is X-FAB‘s One-Micron Modular Mixed Signal Technology. Main target applications |
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pepi crContextual Info: 55E D • MS51fl?2 OOGOflOa 277 ■ H0N3 Honeywell HONEYWELL/S S E C Military Products «"p q , -23 - o S 64K x 1 RADIATION-HARDENED STATIC RAM HC6464 FEATURES RADIATION OTHER • Fabricated using DESC approved QML 1.2|xm RICMOS process • Access Time of 25 ns (typical |
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MS51fl 1x106 1x101 1x109 PIN23 pepi cr | |
HC6856Contextual Info: Military & Space Products 32K x 8 STATIC RAM HC6856 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Bulk 0.8 µm Process Leff = 0.65 µm • Listed on SMD #5962-92153. Available as MIL-PRF-38535 QML Class Q and Class V • Total Dose Hardness through 1x106 rad(SiO2) |
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HC6856 MIL-PRF-38535 1x106 1x1014 1x109 1x10-10 1x1012 HC6856 | |
KD 2.d smd transistorContextual Info: Honeywell Military Products 32K x 8 RADIATION-HARDENED STATIC RAM HC6856 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Bulk 0.8 |um Process • Total Dose Hardness through 1x106 rad S i02 • Listed on SMD #5962-92153. Available as MIL-l-38535 QML Class Q and Class V |
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1x106 1x1014cm 1x109 1x101 HC6856 MIL-l-38535 36-Lead KD 2.d smd transistor | |
teradyne victory
Abstract: LMX2305WG-QML LMX2305WG-MLS CLC452 LMX2305 LMX2315 LMX2315WG-QML LMX2325 LMX2326 LMX2330
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550MHz teradyne victory LMX2305WG-QML LMX2305WG-MLS CLC452 LMX2305 LMX2315 LMX2315WG-QML LMX2325 LMX2326 LMX2330 | |
Contextual Info: Honeywell HC6856 Military Products Preliminary 256K-BIT RADIATION-HARDENED STATIC RAM FEATURES OTHER RADIATION • Fabricated with RICMOS Bulk 0.8 im Process • Total Dose Hardness through 1x106 rad(Si02 • Optional Architecture - 32K x 8 - 256Kx 1 |
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HC6856 256K-BIT 1x106 256Kx 1x1014cm 1x109 1x101 | |
HC6364Contextual Info: b3E D MSS1Ô7E ÜGQD^a T Mb Honeywell IH0N3 8K x 8 RADIATION-HARDENED STATIC RAM HC6364 FEATURES OTHER RADIATION Fabricated using DESC Approved QML 1.2 nm RICMOS1“ Process • Listed on SMD #5962-38294. Available as MIL-l-38535 QML Class Q and Class V Total Dose Hardness through |
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HC6364 MIL-l-38535 1x10s 1x101 1x109 1x10eto 36-LEAD 28-LEAD HC6364/1 HC6364 | |
Contextual Info: Honeywell Military & Space Products HC6856 32K x 8 STATIC RAM FEATURES RADIATION OTHER • Fabricated with R IC M O S “ IV Bulk 0.8 urn Process Lelf = 0.65 urn • Listed on SMD #5962-92153. Available as MIL-PRF-38535 QML Class Q and Class V • Total Dose Hardness through 1x106 rad(S i02) |
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1x106 1x101 1x109 HC6856 MIL-PRF-38535 36-Leximum |