PED RELAY 24V Search Results

ped relay

Abstract: PED relay 12vdc mx-12 relay PED relay 11 PED relay 5vdc PED Engineering 0638 mx-5 relay relay 12vdc 07-MX-3
Contextual Info: Series 07-MX PED Lim ited 15o - m 150-510 150-511 150-512 Description A sub miniature relay having a single "m ake" contact for switching 5 amps at 250VAC/30VDC. A small footprint encourages high packing density. A pcb socket is also available. Contacts Form

PED relay

Abstract: PED relay 12vdc PED relay 5vdc PED 07-MX-24 PED Engineering ped relay cambridge RELAY md 12 07-MX-3 07-MX-6 07-MX-9
Contextual Info: Series 07-MX PED Lim ited 150-501 150-510 150-511 150 -512 V ! Description A sub m iniature relay having a single "m a k e " co nta ct fo r sw itch in g 5 am ps at 250VAC/30VDC A small fo o tp rin t encourages high packing d en sity A pcb socket is also available

PED relay cross reference

Abstract: LR40787 schrack zt570524 relay Schrack ZT570524 Magnecraft w67 700-HC14Z24 Schrack ZT Allen Bradley 11-pin relay pin out diagram schrack relay cross reference pt570615 finder 15.21
Contextual Info: Your Contact for Industrial Relays SECTION SOCKET COMPATIBLE AND FLANGE MOUNTED RELAYS 1 TO 30 AMPERES 1 SOCKET COMPATIBLE & FLANGE MOUNT RELAYS 782H 781 CERTIFIED CLASS 1 DIVISION 2 FOR HAZARDOUS LOCATIONS 782XBX/XDX RELAY SERIES ISO 9002 QS 9000 L W H 1.521 x 0.551 x 1.082

Contextual Info: Fans and drive concepts for rail technology version 2014-10 ebm-papst: Your highly competent partner in rail engineering Creating the ideal fan solution. Our advantage lies in the perfect interaction. The area of railways places particular requirements on a product. Fans developed uniquely for rail technology and for the specific field of application

Contextual Info: g > M IT Q MH88500 Hybrid Subscriber Line Interface Circuit (SLIC - ISSUE 4 Features • • • • • • • • • • ianuary1994 Ordering Information Differential to single ended conversion No transformers required Minimum installation space Off-hook detection and LED indicator drive

Contextual Info: HAFRFRIS RFP70N03, RF1S70N03, RF1S70N03SM S E M I C O N D U C T O R 70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 70A,30V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature

Contextual Info: RFD16N03L, RFD16N03LSM Semiconductor April 1999 Data Sheet 16A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum

2N33

Contextual Info: CA3273 S E M I C O N D U C T O R High-Side Driver April 1994 Features Description • Equivalent High Pass P-N-P Transistor The CA3273 is a power IC equivalent of a P-N-P pass tran­ sistor operated as a high-side-driver current switch in either the saturated ON or cutoff (OFF) modes. The CA3273

Contextual Info: R F1K 49157 h a r r is S E M I C O N D U C T O R # fl f « f l % W fl # 6.3A, 30V, Avalanche Rated, Single N-Channel LittleFET Enhancement Mode Power MOSFET January 1997 Features Description • 6.3A, 30V The RF1K49157 Single N-Channel power MOSFET is manufactured using an advanced MegaFET process. This

Contextual Info: RF1K49088 HARRIS S E M I C O N D U C T O R 3.5A, 30V, Avalanche Rated, Logic Level, Dual N-Channel LittleFET Enhancement Mode Power MOSFET January 1997 Description Features 3.5A, 30V The RF1K49088 Dual N-Channel power MOSFET is manufactured using an advanced MegaFET process. This

Contextual Info: RF1K49156 HARRIS S E M I C O N D U C T O R 6.3A, 30V, Avalanche Rated, Logic Level, Single N-Channel LittleFET Enhancement Mode Power MOSFET January 1997 Description Features 6.3A, 30V The RF1K49156 Single N-Channel power MOSFET is man­ ufactured using an advanced MegaFET process. This pro­

Contextual Info: H A R R RF1K49086 IS S E M I C O N D U C T O R 3.5A, 30V, Avalanche Rated, Dual N-Channel LittleFET Enhancement Mode Power MOSFET J a n u a ry 1997 Features Description • 3.5A, 30V T he R F 1K 4 90 86 Dual N -C hannel pow er M O S F E T is m a n u ­

Contextual Info: RF1K49223 HARRIS S E M I C O N D U C T O R 2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET Power MOSFET Description Features 2.5A, 30V The RF1K49223 Dual P-Channel power MOSFET is manu­ factured using an advanced MegaFET process. This pro­ cess, which uses feature sizes approaching those of LSI

L9350

Abstract: S-925A
Contextual Info: SGS -THOMSON k7 È ü*[R } o [ILi(g¥^(Q )res L9350 HIGH SIDE DRIVER ADVANCE DATA • ■ ■ ■ ■ LOW SATURATION VOLTAGE TTL COMPATIBLE INPUT WIDE SUPPLY VOLTAGE NO EXTERNAL COMPONENTS INTERNAL RECIRCULATION PATH FOR FAST DECAY OF INDUCTIVE LOAD CUR­

sensycon cm 1

Abstract: ABB transmitter ask 800 sensycon pt100 Hartmann Braun ASK 800 ABB thermocouple hydraulic oil coshh bush beach RTD PT-100 sensycon ABB AX400 RTD 2025 L
Contextual Info: Assist Direct – Instrumentation Catalogue New Dedicated Local Service More Products Than Ever More Detailed Product Information Assist Direct Bringing the power of ABB Instrumentation closer to you. ABB’s rapid, easy-ordering service that brings high quality instrumentation direct to your door from a

ABB transmitter ask 800

Abstract: Hartmann Braun ASK 800 sensycon cm 1 rtd 2025 sensycon pt100 PT-100 sensycon sensycon rtd pt-100 amplifier circuit Electro-Pneumatic Positioner TZID RTD 2025 L
Contextual Info: 23277 ABB Assist Direct revised 10/8/06 16:19 Page 1 Assist Direct – Instrumentation Catalogue New Dedicated Local Service More Products Than Ever More Detailed Product Information 23277 ABB Assist Direct revised 10/8/06 16:19 Page 2 Assist Direct Bringing the power of ABB Instrumentation closer to you.

F10P03L

Abstract: 10P03L p-channel mosfet BL Harris Semiconductor Integrated Circuits N10T TC227 RFD10P03L RFD10P03LSM RFD10P03LSM9A RFP10P03L
Contextual Info: RFD10P03L, RFD10P03LSM, RFP10P03L HARRIS S E M I C O N D U C T O R 10A, 30V, 0.200&, Logic Level P-Channel Power MOSFET May 1997 Features Description • 10A, 30V These products are P-Channel power MOSFETs manufac­ tured using the MegaFET process. This process, which uses

SMPS CIRCUIT DIAGRAM 24v

Abstract: circuit diagram of 12 volt smps power supply power supply smps 24 volt dc L9350 12 volt smps Circuit diagram 24V 2 SMPS circuit diagram 24V and 5v SMPS circuit diagram
Contextual Info: I f' L9350 ADVANCE DATA LOW SATUR ATIO N D R IV E R LOW S A T U R A T IO N V O L T A G E No external components are required because the output recirculation clamping zener is in­ cluded in the chip. This zener can withstand an initial current of 550 m A going down through

Contextual Info: RF1K49224 33 3.5A and 2.5A, 30V, 0.060 and 0.150 Ohms, Complementary LittleFET Power MOSFET June 1997 Features Description • 3.5A, 30V N-Channel 2.5A, 30V (P-Channel) • Peak Current vs Pulse Width Curve The RF1K49224 com plem entary power MOSFET is

telephone hybrid 2wire to 4wire

Abstract: 1n40007 12v dc to pc Power Supply erl 35 m
Contextual Info: HC5503 Semiconductor March 1999 Data Sheet File Num ber 4344.3 Description Low Cost 24V SLIC For PABX/Key Systems • W ide O pe ra ting B attery R ange -21V to -44V T he H arris H C 5503 low cost S LIC is op tim ize d for use in sm all A nalog or m ixed A nalog and Digital Key T elephone

UGN3140U

Contextual Info: 5140 PROTECTED P owebH all SENSOR — LAMP/SOLENOID DRIVER The UGQ 5140K unipolar Hall effect switch is a m onolithic integrated circuit designed for magnetic actuation of low-power incandescent lam ps or inductive loads such as relays or solenoids. Included on chip is a Darlington pow er output that is capable of continu­

Contextual Info: HC5503 Semiconductor Data Sheet March 1999 File Number 4344.3 Description Low Cost 24V SLIC For PABX/Key Systems • W ide O pe ra ting B attery R ange -21V to -44V T he H arris H C 5503 low cost S LIC is op tim ize d for use in sm all A nalog o r m ixed A nalog and D igital Key Telephone

TRANSISTORS 132 GD

Abstract: IRF150 kiv-8 IRF151 circuits of IRF150
Contextual Info: IRF150, IRF151, IRF152, IRF153 Semiconductor 33A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 33A and 40A, 60V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

Contextual Info: HCSS03 HARRIS S E M I C O N D U C T O R Ê M Low Cost 24V SLIC For PABX / Key Systems Ju ly 1998 Features Description • Wide Operating Battery Range -21V to -44V T h e H a rris H C 550 3 lo w c o s t S LIC is o p tim iz e d for use in sm a ll A n a lo g o r m ixed A n a lo g and D igital Key T elephone