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    PEAK REPETITIVE FORWARD CURRENT 2.0 Search Results

    PEAK REPETITIVE FORWARD CURRENT 2.0 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MGN1D120603MC-R7
    		Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN PDF
    MGN1D050603MC-R7
    		Murata Manufacturing Co Ltd DC-DC 1W SM 5-6/-3V GAN PDF
    MGN1S0512MC-R7
    		Murata Manufacturing Co Ltd DC-DC 1W SM 5-12V GAN PDF
    MGN1S1212MC-R7
    		Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN PDF
    MGN1S1208MC-R7
    		Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN PDF

    PEAK REPETITIVE FORWARD CURRENT 2.0 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1N4151

    Contextual Info: 1N4151 Silicon Epitaxial Planar Diode Applications Extreme fast switches 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Average forward current


    Original     		1N4151 D-74025 12-Dec-94 1N4151 PDF

    BAY80

    Contextual Info: BAY80 Silicon Epitaxial Planar Diode Applications General purpose 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Average forward current


    Original     		BAY80 12-Dec-94 D-74025 BAY80 PDF

    1N4154

    Abstract: telefunken 1n4154
    Contextual Info: 1N4154 Silicon Epitaxial Planar Diode Applications Extreme fast switches 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Average forward current


    Original     		1N4154 D-74025 12-Dec-94 1N4154 telefunken 1n4154 PDF

    Contextual Info: _ BAY80 Vishay Telefunken Silicon Epitaxial Planar Diode Applications General purpose y Absolute Maximum Ratings Tj = 25° C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current


    OCR Scan     		BAY80 -Apr-99 01-Apr-99 PDF

    BAY80

    Contextual Info: BAY80 Vishay Telefunken Silicon Epitaxial Planar Diode Applications General purpose 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current


    Original     		BAY80 01-Apr-99 D-74025 BAY80 PDF

    1N4151

    Abstract: 1n4151 VISHAY
    Contextual Info: 1N4151 Vishay Telefunken Silicon Epitaxial Planar Diode Applications Extreme fast switches 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current


    Original     		1N4151 01-Apr-99 D-74025 1N4151 1n4151 VISHAY PDF

    Telefunken

    Abstract: 9154 1N4154 telefunken 1n4154
    Contextual Info: 1N4154 Vishay Telefunken Silicon Epitaxial Planar Diode Applications Extreme fast switches 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current


    Original     		1N4154 01-Apr-99 D-74025 Telefunken 9154 1N4154 telefunken 1n4154 PDF

    BAY80

    Contextual Info: BAY80_ Vishay Telefunken Silicon Epitaxial Planar Diode Applications General purpose Absolute Maximum Ratings Tj = 25°C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current


    OCR Scan     		BAY80_ 01-Apr-99 01-Apr-99 BAY80 PDF

    Contextual Info: 1N4154 vishay Vishay Telefunken Silicon Epitaxial Planar Diode Applications Extreme fast switches ^ ft 94 9367 Absolute Maximum Ratings Tj = 25 C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current


    OCR Scan     		1N4154 01-Apr-99 PDF

    BAV100

    Abstract: BAV101 BAV102 BAV103
    Contextual Info: BAV100.BAV103 Vishay Telefunken Silicon Epitaxial Planar Diodes Applications General purposes 94 9371 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage g Test Conditions Reverse voltage g Peak forward surge current Repetitive peak forward current


    Original     		BAV100. BAV103 BAV100 BAV101 BAV102 BAV100 BAV101 BAV102 BAV103 PDF

    BAY80

    Contextual Info: BAY80 TELEFUNKEN Semiconductors Silicon Epitaxial Planar Diodes Applications General purpose 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Repetitive peak reverse voltage Reverse voltage Peak forward surge current tp=1ms Repetitive peak forward current


    Original     		BAY80 1994in D-74025 BAY80 PDF

    1N4154

    Abstract: 1N4154 telefunken
    Contextual Info: 1N4154 TELEFUNKEN Semiconductors Silicon Epitaxial Planar Diode Applications Extreme fast switches 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Repetitive peak reverse voltage Reverse voltage Peak forward surge current tp=1ms Repetitive peak forward current


    Original     		1N4154 TLx25 D-74025 1N4154 1N4154 telefunken PDF

    MA174

    Abstract: MA4X174
    Contextual Info: Switching Diodes MA4X174 MA174 Silicon planar type Unit : mm 2.90+0.02 –0.05 For small power rectification and surge absorption 1.9±0.2 200 V Repetitive peak reverse voltage VRRM 250 V Non-repetitive peak forward surge current VRSM 300 V IO 100 mA Repetitive peak forward current*1


    Original     		MA4X174 MA174) 25nductor MA174 MA4X174 PDF

    1N4151

    Abstract: TLX2
    Contextual Info: 1N4151 TELEFUNKEN Semiconductors Silicon Epitaxial Planar Diode Applications Extreme fast switches 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Repetitive peak reverse voltage Reverse voltage Peak forward surge current tp=1ms Repetitive peak forward current


    Original     		1N4151 TLx25 D-74025 1N4151 TLX2 PDF

    Contextual Info: DIGITRON SEMICONDUCTORS MUR3005PT-MUR3060PT 30A ULTRAFAST RECTIFIER MAXIMUM RATINGS MUR Rating Symbol Peak repetitive reverse voltage Working peak reverse voltage DC blocking voltage VRRM VRWM VR Average rectified forward current Rated VR IF(AV) Peak repetitive forward current, per leg


    Original     		MUR3005PT-MUR3060PT MUR3020PT, MUR3030PT, MUR3040PT PDF

    BAV103 temic

    Abstract: BAV100 BAV101 BAV102 BAV103 bav100.bav103 VR100V
    Contextual Info: BAV100.BAV103 Silicon Epitaxial Planar Diodes Applications General purposes 94 9371 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive p ppeak reverse voltage g Test Conditions Reverse voltage g Peak forward surge current Repetitive peak forward current


    Original     		BAV100. BAV103 BAV100 BAV101 BAV102 BAV103 temic BAV100 BAV101 BAV102 BAV103 bav100.bav103 VR100V PDF

    Contextual Info: CMC02 TOSHIBA RECTIFIER SILICON DIFFUSED TYPE CMC02 For Strobe Discharge Circuit Unit: mm • Repetitive peak reverse voltage: VRRM = 400 V • Average forward current: IF AV = 1.0 A • Low forward voltage: VFM = 1.0 V (max.) • Repetitive peak forward current: IFRM = 150 A (Note 2)


    Original     		CMC02 PDF

    CMC02

    Contextual Info: CMC02 TOSHIBA RECTIFIER SILICON DIFFUSED TYPE CMC02 For Strobe Discharge Circuit Unit: mm • Repetitive peak reverse voltage: VRRM = 400 V • Average forward current: IF AV = 1.0 A • Low forward voltage: VFM = 1.0 V (max.) • Repetitive peak forward current: IFRM = 150 A (Note 2)


    Original     		CMC02 CMC02 PDF

    Contextual Info: DIGITRON SEMICONDUCTORS USD520-USD550 SCHOTTKY RECTIFIERS MAXIMUM RATINGS Symbol Value Peak repetitive forward current @ TC = 115°C Rated VR, square wave, 20 kHz, 50% duty cycle Parameter IFRM 150A Average forward current @ TC = 115°C IF(AV) 75A Non-repetitive peak surge current (8.3ms)


    Original     		USD520-USD550 MIL-PRF-19500, PDF

    BAV70

    Abstract: SOT23 DIODE marking CODE AV
    Contextual Info: BAV70 SMALL SIGNAL DIODE 3 1 2 Marking Code: A4 SOT-23 Plastic Package Absolute Maximum Ratings* Ta = 25OC Symbol Limits Unit Peak repetitive reverse voltage VRRM 70 V Average rectified Forward current IF(AV) 200 mA Non-repetitive peak forward surge current


    Original     		BAV70 OT-23 BAV70 SOT23 DIODE marking CODE AV PDF

    Contextual Info: CMC01 TOSHIBA RECTIFIER SILICON DIFFUSED TYPE CMC01 For Strobe Discharge Circuit Unit: mm • Repetitive peak reverse voltage • : VRRM = 400 V • Average forward current: IF AV = 1.0 A • Repetitive peak forward current: IFRM = 150 A (Refer to the Note 2)


    Original     		CMC01 PDF

    Contextual Info: MP7001 TOSHIBA Power Module MP7001 1. Maximum Ratings Ta = 25°C Diode Characteristics Symbol Rating Unit Repetitive peak reverse voltage VRRM 600 V Peak one cycle surge forward current (D1, D2) (50 Hz, non-repetitive) IFSM 220 A Forward current IF 25 A


    Original     		MP7001 PDF

    CMC02

    Contextual Info: CMC02 TOSHIBA RECTIFIER SILICON DIFFUSED TYPE CMC02 For Strobe Discharge Circuit Unit: mm • Repetitive peak reverse voltage: VRRM = 400 V • Average forward current: IF AV = 1.0 A • • • Low forward voltage: VFM = 1.0 V (max.) Repetitive peak forward current: IFRM = 150 A (Note 2)


    Original     		CMC02 CMC02 PDF

    MP7001

    Abstract: MP700
    Contextual Info: MP7001 TOSHIBA Power Module MP7001 1. Maximum Ratings Ta = 25°C Diode Characteristics Symbol Rating Unit Repetitive peak reverse voltage VRRM 600 V Peak one cycle surge forward current (D1, D2) (50 Hz, non-repetitive) IFSM 220 A Forward current IF 25 A


    Original     		MP7001 MP7001 MP700 PDF