PDF PIN PHOTO DIODE DESCRIPTION Search Results

gold detectors circuit

Abstract: PDF PIN PHOTO DIODE DESCRIPTION detector alcohol OP58TS The Optical Devices
Contextual Info: Spec. No. : ODT-W010-82 0 Issued Date : 2004.09.20 SPECIFICATION MODEL NAME : Photo Diode MODEL NO. : OP58TS Prepared by : Checked by : Approved by : ODTech Head office : 814, Youngam-ri, Bongdong-eup, Wanju-gun, Jeonbok-do, Korea Tel : 82-63-263-7626, Fax : 82-63-262-7624

Contextual Info: 400mW /1060nm Single Mode Pump Laser Features • • • • 400mW Kink Free 1060 wavelength Internal cooler and thermistor PM Fiber Applications • Ordering Information Fiber Lasers Part number Description EM250 1060nm SM Pump General Description The EM250 single mode, cooled 1060 nm pump laser delivers up to 400mW of fiber-coupled power. The module is packaged

bragg

Abstract: Grating P162-350-YYYZ P162 F4223
Contextual Info: 350mW Single Mode Pump Laser Features • • • • Qualified according to Telcordia GR-468-CORE Optional Bragg grating Internal cooler and thermistor RoHS compliant Applications • • • • Telecom CATV Defense Life Science General Description The EM4 P162 line of single mode, cooled 980 nm pump lasers deliver up to 350mW of fiber-coupled power. The modules are

LH154Q01

Abstract: LCD MIPI PANEL sharp
Contextual Info: www.panelook.com Global LCD Panel Exchange Center LH154Q01 Liquid Crystal Display Product Specification 1. GENERAL DESCRIPTION The LH154Q01 is a Color Active Matrix Liquid Crystal Display with Light Emission Diode LED backlight system. The matrix employs a-Si Thin Film Transistor as the active element.

670NM Laser-Diode

Abstract: SLD1132VS
Contextual Info: SLD1132VS 635nm Red Laser Diode Description The SLD1132VS is a red laser diode designed for laser pointers. Its wavelength 635nm typ. is shortened by 35nm and visibility is increased by approximately 7 times, compared to the conventional visible laser diode (670nm typ.).

CLC42

Contextual Info: CLC420 High Speed, Voltage Feedback Op Amp General Description Applications The CLC420 is an operational amplifier designed for applications requiring matched inputs, integration or transimpedance amplification. Utilizing voltage feedback architecture, the CLC420 offers a 300MHz bandwidth, a 1100V/µs slew

Contextual Info: CLC420 High-Speed, Voltage Feedback Op Amp General Description Applications The CLC420 is an operational amplifier designed for applications requiring matched inputs, integration or transimpedance amplification. Utilizing voltage feedback architecture, the CLC420 offers a 300MHz bandwidth, a 1100V/µs slew

tfdu2201

Abstract: TFDU2201-TR1 TFDU2201-TR3
Contextual Info: TFDU2201 Vishay Semiconductors Low Profile Transceiver Module PIN Photodiode and Infrared Emitter Description The miniaturized TFDU2201 is an ideal PIN photodiode transmitter combination in a unique package for applications in telecommunications like mobile

Contextual Info: DATA SHEET PHOTO DIODE NR6300EZ φ 30 m InGaAs AVALANCHE PHOTO DIODE FOR OTDR APPLICATIONS DESCRIPTION The NR6300EZ is an InGaAs avalanche photo diode, and can be used in OTDR systems. FEATURES • Small dark current ID = 5 nA • Small terminal capacitance

TFDU2201

Abstract: TFDU2201-TR1 TFDU2201-TR3 Soldering and desoldering
Contextual Info: TFDU2201 Vishay Semiconductors Low Profile Transceiver Module PIN Photodiode and Infrared Emitter Description The miniaturized TFDU2201 is an ideal PIN photodiode transmitter combination in a unique package for applications in telecommunications like mobile

Contextual Info: CLC420 High-Speed, Voltage Feedback Op Amp General Description Applications The CLC420 is an operational amplifier designed for applications requiring matched inputs, integration or transimpedance amplification. Utilizing voltage feedback architecture, the CLC420 offers a 300MHz bandwidth, a 1100V/µs slew

lens laser diode

Abstract: SLD1122VS SLD1135VS 650NM laser diode 5mw 650nm laser diode single power 650nm 5mw 5v laser
Contextual Info: SLD1135VS 650nm Index-Guided Red Laser Diode Description The SLD1135VS is a index-guided red laser diode for Laser pointer. The wavelength is 20nm shorter than SLD1122VS. M-294 Features • Small astigmatism 7µm typ. • Small package (φ5.6mm) • Single longitudinal mode

laser diode chip 635nm

Contextual Info: SLD1132VS 635nm Red Laser Diode Description The SLD1132VS is a red laser diode designed for laser pointers. Its wavelength 635nm typ. is shortened by 35nm and visibility is increased by approximately 7 times, compared to the conventional visible laser diode (670nm typ.).

Contextual Info: DATA SHEET PHOTO DIODE NR8800FS-CB φ 80 m InGaAs AVALANCHE PHOTO DIODE MODULE FOR OTDR APPLICATIONS DESCRIPTION The NR8800FS-CB is an InGaAs avalanche photo diode module with multi mode fiber, and can be used in OTDR systems. FEATURES • Small dark current

Contextual Info: DATA SHEET PHOTO DIODE NR8800FS-CB φ 80 m InGaAs AVALANCHE PHOTO DIODE MODULE FOR OTDR APPLICATIONS DESCRIPTION The NR8800FS-CB is an InGaAs avalanche photo diode module with multi mode fiber, and can be used in OTDR systems. FEATURES • Small dark current

jerry steele

Abstract: microcontroller opto isolator loop powered galvanic isolator MAX6577 i2c isolator IC Temperature Sensors temperature sensor data sheet MAX6575 opto isolator IC SAMPLE TRANSISTOR DATA SHEET
Contextual Info: TEMPERATURE SENSORS Application Note 1075: May 24, 2002 Simplify Isolated Temperature Sensing with Single Wire Sensors Sensors, such as temperature sensors, require galvanic isolation when they are mounted in "mechanically inconvenient" locations such as electrically noisy environments, poorly

jerry steele

Abstract: MAX6577 MAX6575 MAX6501 MAX6502 MAX6503 MAX6504 MAX6507 MAX6576 microcontroller opto isolator
Contextual Info: Maxim > App Notes > TEMPERATURE SENSORS and THERMAL MANAGEMENT Keywords: temperature sensor, switch, isolated temperature sensor, isolated temperature detector, temperature sensing, temp sensors, single wire sensors May 24, 2002 APPLICATION NOTE 1075 Simplify Isolated Temperature Sensing With Single Wire Sensors

NOA1212

Abstract: 505AE
Contextual Info: NOA1212 Ambient Light Sensor with Dark Current Compensation Description The NOA1212 is a very low power ambient light sensor ALS with an analog current output and a power down mode to conserve power. Designed primarily for handheld device applications, the active power

Contextual Info: DATA-SHEET MCS3AS 3-element colour sensor – SMD/SO8 FUNCTION The colour sensors are made of 3 Si-PIN photo diodes integrated on chip. They are carried out as segments of a ring with the diameter of 2,0 mm. The design as Si-PIN photo diodes allows signal frequencies up to MHz-range. In order to achieve a small cross talk between

Contextual Info: DATA SHEET PHOTO DIODE NR8360JP-BC φ 30 m InGaAs AVALANCHE PHOTO DIODE 14-PIN DIP MODULE WITH TEC DESCRIPTION The NR8360JP-BC is an InGaAs avalanche photodiode module with single mode fiber. A thermoelectric cooler is integrated enabling the temperature control of the APD chip. It is designed for long-reach optical communications and

TRANSISTOR SMD catalog

Abstract: OP522 darlington transistor SMD NPN phototransistor 450nm smd npn darlington OP525DA LED photo darlington transistor IC PACKAGE 935 diode smd OP525F OP570
Contextual Info: Silicon Phototransistor and Photo Darlington in 1210 SMD Package OP525, OP525DA, OP525F OP525 and OP525DA OP525F Features: • • • • • • • • High Speed and High photo sensitivity Fast response time 1210 package size High Current Gain Water clear and black lens choices

colour sensor

Abstract: siemens photo sensor MTI04 PHOTO SENSOR of application construction of photo diode Ir sensor 3 pin details TO5 package 3-element colour sensor 6581 IR blocking SENSOR
Contextual Info: DATA-SHEET MCS3AT/BT 3-element colour sensor – TO5 FUNCTION The colour sensors are made of 3 Si-PIN photo diodes integrated on chip. They are carried out as segments of a ring with the diameter of 2,0 mm. The design as Si-PIN photo diodes allows signal frequencies up to MHz-range. In order to achieve a small cross talk between

PDF PIN PHOTO DIODE DESCRIPTION

Abstract: MCSIBT IR blocking SENSOR construction of photo diode IR SENSOR TO5 package MTI04
Contextual Info: DATA-SHEET MCSi Integral 3-Element Colour Sensor 1. FUNCTION The colour sensors are made of 19 x 3 Si-PIN photo diodes integrated on chip. They are carried out as a hexagonal matrix with the diameter of 3 mm. The design as Si-PIN photo diodes allows signal frequencies up to MHz-range. In order to achieve a small cross talk

smd transistor a2

Abstract: OP501DA
Contextual Info: Silicon Phototransistor and Photo Darlington in Miniature 0805 SMD Package OP500, OP501, OP500DA, OP501DA OP501,DA Features: • • • • • High photo sensitivity Fast response time 0805 package size Phototransistor or Photo Darlington Output Choice of opaque or water clear flat lens