PD-20 W Search Results

Contextual Info: PD - 9699C IRFD024 Absolute Maximum Ratings Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 2.5 ID @ TA = 100°C 1.8 IDM Continuous Drain Current, VGS @ 10V Pulsed Drain Current PD @TA = 25°C Power Dissipation 1.3 W VGS 0.0083 +/-20

Contextual Info: TO-92 Plastic Package Transistors NPN Electrical Characteristics (Ta=25‘C, Unless Otherwise Specified) Maximum Ratings Type No. 'c PD (W) (A) 6Tc=25°t ^CBO ^CEO ^EBO (V) Min (V) Min (V) Min 2SD261 40 20 5 0.5 2SD468 25 20 5 0.9 2SD468B 25 20 5 2SD46BC

ITR-H-0101

Abstract: Photointerrupter
Contextual Info: ITR-H-0101 PHOTOINTERRUPTER ABSOLUTE MAXIMUN RATING: Ta=25ºC Input Output Symbol Parameter Max Unit Pd Power Dissipation 60 mW VR Reverse Voltage 5 V IF Forward Current 50 mA Pd Power Dissipation 10 mW IC Collector Current 20 mA VCEO Collector-Emitter Voltage

Photointerrupter

Abstract: ITR-H-0115
Contextual Info: ITR-H-0115 PHOTOINTERRUPTER ABSOLUTE MAXIMUN RATING: Ta=25ºC Input Output Symbol Parameter Max Unit Pd Power Dissipation 60 mW VR Reverse Voltage 5 V IF Forward Current 50 mA Pd Power Dissipation 10 mW IC Collector Current 20 mA VCEO Collector-Emitter Voltage

IRFU210A

Abstract: IRFU230A FDU3706 FDU6030BL FDU6512A FDU6612A FDU6644 FDU6680A FDU6692 FDU7030BL
Contextual Info: Discrete MOSFET TO-251 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-251(IPAK) N-Channel FDU3706 20 Single 0.009 0.011 0.016 - 16 50 44 FDU6512A 20 Single - 0.021 0.031

20CLQ045

Contextual Info: PD -20352E 20CLQ045 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 20A, 45V Major Ratings and Characteristics Characteristics 20CLQ045 Units IF AV Rectangular waveform VRRM (Per Leg) 20 A 45 V IFSM @ tp = 8.3ms half-sine (Per Leg) 250 A VF @ 10Apk, TJ =125°C

IRG4BC20FD

Contextual Info: PD 91601A IRG4BC20FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Light Emitting Diodes LNJ412W83RA1 Hight Bright Surface Mounting Chip LED TSS Type • Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Power dissipation PD 55 mW Forward current IF 20 mA

mosfet resonant circuit induction heater

Abstract: SKM 204 A mosfet induction heater Semikron 130/s SWITCHING WELDING BY MOSFET "MOSFET Modules" SKM204A
Contextual Info: Absolute Maximum Ratings Symbol VDS VDGR ID IDM VGS PD Tj, Tstg Visol humidity climate Conditions 1 RGS = 20 kΩ Tcase = 55 °C AC, 1 min DIN 40 040 DIN IEC 68 T.1 Values Units 50 50 200 600 ± 20 400 – 55 . . .+150 2 500 Class F 55/150/56 V V A A V W

SKM 181 R

Abstract: semikron semitrans skm 151 mosfet SKM 111 AR SKM 121 R SKM 300 CIRCUIT SKM151R nf 52 ar skm204a SKM 121 AR
Contextual Info: Absolute Maximum Ratings Values Symbol Conditions 1 VDS VDGR ID IDM VGS PD Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ AC, 1 min. DIN 40 040 DIN IEC 68 T.1 500 500 48 192 ± 20 625 –40 . +150 (125) 2 500 Class F 40/125/56 V V A A V W °C V 48

IRG4PC40FD

Contextual Info: PD 91464B IRG4PC40FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

Contextual Info: • SUPER BRIGHT SURFACE MOUNT LED 1104B Series Flat Lens Type 3.2X2.8mm ■ Absolute Maximum Ratings Ta = 25°C Blue Blue Green Green Yellow Yellow Orange Red DB DC DG YPY FY FA FR Unit Power Dissipation Pd 76 76 76 81 81 81 81 mW Forward Current IF 20 20

AN-994

Abstract: IR12A MBRA120TR
Contextual Info: Bulletin PD-20643 rev. A 02/02 MBRA120TR SCHOTTKY RECTIFIER 1.0 Amp SMA Description/ Features Major Ratings and Characteristics Characteristics IFAV MBRA120TR Units Rect. Waveform VRRM 1.0 A 20 V The MBRA120TR surface mount Schottky rectifier has been designed for applications requiring low forward drop and very

Contextual Info: MATERIAL DECLARATION SHEET Model # 3302 Product Line Trimming Potentiometer Date August 20, 2004 RoHS Compliant Yes No. 1 Construction element Substrate Material group Ceramic 2 Electrode Ag/Pd 3 Resistive element Metal glaze resistor Stainless steel 4 Terminal

40L15CT

Abstract: 40L15CT-1 40L15CTS IRFP460 PD-20568 SMD-220
Contextual Info: Bulletin PD-20568 rev. E 09/01 40L15CT 40L15CTS 40L15CT-1 SCHOTTKY RECTIFIER 2 x 20 Amps Major Ratings and Characteristics Characteristics Description/Features Values Units IF AV Rectangular waveform 40 A VRRM 15 V IFSM @ tp = 5 µs sine 700 A VF 0.25 V - 55 to 125

40HFL40S02

Abstract: 40L15CT 40L15CT1 40L15CTS IRFP460 PD-20568 SMD-220
Contextual Info: PD-20568 rev. C 11/99 40L15CT 40L15CTS 40L15CT1 SCHOTTKY RECTIFIER 2 x 20 Amps Major Ratings and Characteristics Characteristics Description/Features This center tap Schottky rectifier has been optimized for Ultra low forward voltage drop. This device has been specifically

Contextual Info: EP2600PD-62.500M EP26 00 PD -62.500M Series RoHS Compliant Pb-free 3.3V 4 Pad 5mm x 7mm Ceramic SMD LVCMOS Programmable Oscillator Frequency Tolerance/Stability ±100ppm Maximum Operating Temperature Range -20°C to +70°C Pb RoHS Nominal Frequency 62.500MHz

Contextual Info: EP2645PD-75.000M EP26 45 PD -75.000M Series RoHS Compliant Pb-free 3.3V 4 Pad 5mm x 7mm Ceramic SMD LVCMOS Programmable Oscillator Frequency Tolerance/Stability ±50ppm Maximum Operating Temperature Range -20°C to +70°C Pb RoHS Nominal Frequency 75.000MHz

Contextual Info: EP2645PD-33.000M EP26 45 PD -33.000M Series RoHS Compliant Pb-free 3.3V 4 Pad 5mm x 7mm Ceramic SMD LVCMOS Programmable Oscillator Frequency Tolerance/Stability ±50ppm Maximum Operating Temperature Range -20°C to +70°C Pb RoHS Nominal Frequency 33.000MHz

FP460

Abstract: D0803 40L15CW 40HF
Contextual Info: Bulletin PD-20567 rev. D 08/03 40L15CW SCHOTTKY RECTIFIER 2 x 20 Amps Major Ratings and Characteristics Characteristics IF AV Rectangular Description/ Features 40L15CW Units 40 A VRRM 15 V IFSM @ tp = 5 µs sine 700 A VF 0.25 V - 55 to 125 °C waveform @ 19 Apk, TJ=125°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Light Emitting Diodes LNJ212R8ARA Surface Mounting Chip LED TSS Type • Absolute Maximum Ratings Ta = 25°C 項目  Lighting Color 記号 定格 単位 PD 50 mW Forward current IF 20 mA Pulse forward current *

IRG4BC20F

Contextual Info: PD - 91602A IRG4BC20F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

T4 1060

Abstract: MC10101P T45 marking MC10101L mc10101 MC10101FN
Contextual Info: MC10101 Quad OR/NOR Gate The MC10101 is a quad 2–input OR/NOR gate with one input from each gate common to pin 12. • PD = 25 mW typ/gate No Load • tpd = 2.0 ns typ • tr, tf = 2.0 ns typ (20%–80%) http://onsemi.com LOGIC DIAGRAM 4 MARKING DIAGRAMS

IRG4PC40F

Contextual Info: PD 91463B IRG4PC40F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than