PD 2028 B Search Results

PD 2028 b

Contextual Info: SELECTION GUIDE PA RI NO. SYSTEM INFRARED EM ITTI MG DIODES : PHOTODIODES : LAMP CATEGORYBRIGHT LED PRODUCT •PHOTOTRANSISTORS • PHOTOREFLECTORS : LIGHT BED-DDDDDï PACKAGE TYPE LAMP CATEGORY: IR: Infrared Emitting Diodes PT: Phototransistors PD: Photodiodes

Phototransistors

Abstract: Infrared LED 940nm
Contextual Info: SELECTION GUtDE PART NO. SYSTEM PHOTOTRANSISTORS : PHOTOREFLECTORS : INFRARED EMITTIMG DIODES : PHOTODIODES : LIGHT SOURCE LAMP CATEGORY - BRIGHT LED PRODUCT - LENS A PPEA RAN CE BC D -D D D D D t XXX PACKAGE TYPE SPECIAL DEVICE SERIES IDENTIFICATION LEADS TYPE

2SK332

Contextual Info: _ . f » 2SK332 »JUU t « No. 9 56 9031 $ •*> y3 > N SANYO ' f&ÈWftTlàÈiçlSîh. DC 7 ” y 'f X -iBnS'C' . A bsolute Maximum R atin g s/T a=25°C u n it P U -f V • V — X H J Ï ff — |v . K U v i f VDSS Vgds V - h W,H Ig 10 mA XD 20 mA F u 'T V

PD 2028 b

Contextual Info: 2 4 3 5 7 6 9 A 24.0 Section A - A 5.05 b ±0.1 O 2 narrow/wide version Reference plan Top of PC board ±0.1 d 2 e 2) \ SpacG for marking À 0.3 B CM N / GO i_ n N N 1/ \ CS¡ o +l r*- r*-! C version without wall c ) / ) C í i I i i g i y i i i i i ' B

Contextual Info: DATA SHEET 1SMB2EZ11~1SMB2EZ39 GLASS PASSIVATED JUNCTION SILICON ZENER DIODES 2.0 Watts VOLTAGE POWER 11 to 39 Volts SMB/DO-214AA Unit: inch mm FEATURES • Low profile package .155(3.94) .130(3.30) • Built-in strain relief • Glass passivated iunction

Photodiodes

Abstract: Phototransistors Infrared LED 940nm i r led 940nm
Contextual Info: INFRARED S E R I E S SELECTION GUIDE PART NO. SYSTEM • INFRARED EMITTIMG DIODES : • PHOTODIODES : LAMP CATEGORY • PHOTOTRANSISTORS : • PHOTOREFLECTORS : | pSIl LIGHT SOURCE | |- LENS APPEARANCE I 1 ^ 1 ^ [T"|

Contextual Info: 1SMB2EZ6.8~1SMB2EZ51 GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 6.8 to 51 Volts POWER 2.0 Watts FEATURES • Low profile package • Built-in strain relief • Glass passivated iunction • Low inductance • Typical ID less than 1.0µA above 11V

Contextual Info: Signal Sources Options 118 Fast Pulse Modulator 2026A/B Option 118 Fast Pulse Modulator extends the application of 2026A/B 2 and 3 source signal generators to the testing of IFF radar and ECM receivers • Two or three high quality RF signal generators in a space efficient format

Contextual Info: Signal Sources 2023N Signal Generator With its level of performance, this compact general purpose signal generator delivers outstanding value for money. • Wide frequency coverage:9 kHz to 1.2 GHz • Excellent spectral purity • Linear and logarithmic sweep mode

12seg

Contextual Info: TO SHIBA TMP47P1620V CMOS 4-BIT MICROCONTROLLER TMP47P1620VF The 47P1620V is the system evaluation LSI of 47C1220 / 1620 with 128K bits one-time PROM. The 47P1620V programs/verifies using an adapter socket to connect with PROM programmer, as it is in TMM27128AD.

TEA 2029 A

Abstract: MPC860 jtag tea 2030 MPC860 PA10 PA11 PA13 PA15 PB30 PB31
Contextual Info: SECTION 20 ELECTRICAL CHARACTERISTICS This section contains detailed information on power considerations, DC/AC electrical characteristics, and AC timing specifications for the MPC860. NOTE The MPC860 electrical specifications are preliminary and many specs are from design simulations. These specifications may

IRFF320R

Abstract: IRFF323R IRFF321R IRFF322R
Contextual Info: Rugged Power MOSFETs_ IRFF320R, IRFF321R, IRFF322R, IRFF323R File Number 2028 Avalanche Energy Rated N-Channel Power MOSFETs 2-OA a nd 2.5A, 350V -400V ros on = 1 .8 0 a nd 2 .5 0 N-CHANNEL ENHANCEMENT MODE D Feature«: • ■ ■ ■

MPC860 memory controller

Contextual Info: SECTION 20 ELECTRICAL CHARACTERISTICS This section contains detailed information on power considerations, DC/AC electrical characteristics, and AC timing specifications for the MPC860. NOTE The MPC860 electrical specifications are preliminary and many specs are from design simulations. These specifications may

Contextual Info: Table of Contents Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 External Manufacturing Quality . . . . . . . . . . . . . . . . . 16 ON Semiconductor Quality System . . . . . . . . . . . . . . . 6 Customer Returns . . . . . . . . . . . . . . . . . . . . . . . . 17

Contextual Info: PRELIMINARY DATA SHEET 1GB Registered DDR SDRAM DIMM HB54R1G9F2U-A75B/B75B/10B 128M words x 72 bits, 2 Banks Description Features The HB54R1G9F2U is a 128M × 72 × 2 bank Double Data Rate (DDR) SDRAM Module, mounted 36 pieces of 256Mbits DDR SDRAM (HM5425401BTB) sealed in

HB54R1G9F2U

Abstract: HB54R1G9F2U-10B HB54R1G9F2U-A75B HB54R1G9F2U-B75B
Contextual Info: DATA SHEET 1GB Registered DDR SDRAM DIMM HB54R1G9F2U-A75B/B75B/10B 128M words x 72 bits, 2 Banks Description Features The HB54R1G9F2U is a 128M × 72 × 2 bank Double Data Rate (DDR) SDRAM Module, mounted 36 pieces of 256Mbits DDR SDRAM (HM5425401BTB) sealed in

Contextual Info: PRELIMINARY DATA SHEET 1GB Registered DDR SDRAM DIMM HB54R1G9F2-A75B/B75B/10B 128M words x 72 bits, 2 Banks Description Features The HB54R1G9F2 is a 128M × 72 × 2 bank Double Data Rate (DDR) SDRAM Module, mounted 36 pieces of 256Mbits DDR SDRAM (HM5425401BTB) sealed in

Contextual Info: DATA SHEET 1GB Registered DDR SDRAM DIMM HB54R1G9F2-B75B/10B 128M words x 72 bits, 2 Ranks Features The HB54R1G9F2 is a 128M × 72 × 2 rank Double Data Rate (DDR) SDRAM Module, mounting 36 pieces of 256Mbits DDR SDRAM sealed in TCP package, 1 piece of PLL clock driver, 2 pieces of register driver

HB54R1G9F2

Abstract: HB54R1G9F2-10B HB54R1G9F2-A75B HB54R1G9F2-B75B
Contextual Info: DATA SHEET 1GB Registered DDR SDRAM DIMM HB54R1G9F2-A75B/B75B/10B 128M words x 72 bits, 2 Banks Description Features The HB54R1G9F2 is a 128M × 72 × 2 bank Double Data Rate (DDR) SDRAM Module, mounted 36 pieces of 256Mbits DDR SDRAM (HM5425401BTB) sealed in

gb15xp120kt

Abstract: GB15XP120KTPBF 93913
Contextual Info: GB15XP120KTPbF Vishay High Power Products Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED Diodes, 15 A FEATURES • Generation 5 NPT 1200 V IGBT technology • HEXFRED® diode with ultrasoft reverse recovery • Very low conduction and switching losses

Contextual Info: TO SH IB A TMP47C620/820 CMOS 4-Bit Microcontroller TMP47C620DF, TMP47C820DF TheTMP47C620/820 are high speed and high performance 4-bit single chip microcomputers based on the TLCS-470 series with a LCD driver and high speed tim er/counters. ROM RAM TMP47C620DF

Contextual Info: > 4M C C DEVICE SPECIFICATION 33 x 32 1.25 G B IT/S D IFF E R E N T IA L CR O SSPO IN T SW ITCH S2028 GENERAL DESCRIPTION FEATURES 33 x 32 differential crosspoint switch Full broadcast switching capability Differential 10K PECL data path Configurable differential output driver

Contextual Info: SM56404407UX6UU May 31, 2000 Revision History • May 31, 2000 Added Command Truth Table, Mode Register Table and notes. Modified waveforms Auto Refresh (CBR cycle and Power Down Mode and Clock Mask). • May 29, 1998 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com

Contextual Info: PXI Modules 3020 Series Digital RF Signal Generators Fully featured PXI digital RF signal generator modules for applications in communications system test • Frequency ranges spanning 100 kHz to 6 GHz • Level ranges -120 dBm up to +17 dBm max. • Level accuracy ±0.3 dB typical cw