PD 2028 B Search Results

pd 2028

Abstract: 430TX AC97 MK1492-03 MK1492-03R
Contextual Info: PRELIMINARY INFORMATION MK1492-03 ICROCLOCK Intel Mobile/SDRAM Clock Source Description Features The MK1492-03 is a low cost, low jitter, high performance clock synthesizer for Intel’s 430TX and 440BX chipsets for Pentium™ and Pentium II Processor based computer applications. Using

MK1492-02

Abstract: PD 2028 b 430TX
Contextual Info: PRELIMINARY INFORMATION MK1492-02 ICROCLOCK Intel Mobile/SDRAM Clock Source Description Features The MK1492-02 is a low cost, low jitter, high performance clock synthesizer for Intel’s 430TX and 440BX chipsets for Pentium™ and Pentium II Processor based computer applications. Using

PD 2028 b

Contextual Info: SELECTION GUIDE PA RI NO. SYSTEM INFRARED EM ITTI MG DIODES : PHOTODIODES : LAMP CATEGORYBRIGHT LED PRODUCT •PHOTOTRANSISTORS • PHOTOREFLECTORS : LIGHT BED-DDDDDï PACKAGE TYPE LAMP CATEGORY: IR: Infrared Emitting Diodes PT: Phototransistors PD: Photodiodes

Phototransistors

Abstract: Infrared LED 940nm
Contextual Info: SELECTION GUtDE PART NO. SYSTEM PHOTOTRANSISTORS : PHOTOREFLECTORS : INFRARED EMITTIMG DIODES : PHOTODIODES : LIGHT SOURCE LAMP CATEGORY - BRIGHT LED PRODUCT - LENS A PPEA RAN CE BC D -D D D D D t XXX PACKAGE TYPE SPECIAL DEVICE SERIES IDENTIFICATION LEADS TYPE

2SK332

Contextual Info: _ . f » 2SK332 »JUU t « No. 9 56 9031 $ •*> y3 > N SANYO ' f&ÈWftTlàÈiçlSîh. DC 7 ” y 'f X -iBnS'C' . A bsolute Maximum R atin g s/T a=25°C u n it P U -f V • V — X H J Ï ff — |v . K U v i f VDSS Vgds V - h W,H Ig 10 mA XD 20 mA F u 'T V

PD 2028 b

Contextual Info: 2 4 3 5 7 6 9 A 24.0 Section A - A 5.05 b ±0.1 O 2 narrow/wide version Reference plan Top of PC board ±0.1 d 2 e 2) \ SpacG for marking À 0.3 B CM N / GO i_ n N N 1/ \ CS¡ o +l r*- r*-! C version without wall c ) / ) C í i I i i g i y i i i i i ' B

Contextual Info: DATA SHEET 1SMB2EZ11~1SMB2EZ39 GLASS PASSIVATED JUNCTION SILICON ZENER DIODES 2.0 Watts VOLTAGE POWER 11 to 39 Volts SMB/DO-214AA Unit: inch mm FEATURES • Low profile package .155(3.94) .130(3.30) • Built-in strain relief • Glass passivated iunction

ppmg

Abstract: RG-165 RG-213YU 2254 225389-2 225389-4
Contextual Info: 3 4 DRAWING MADE IN T H I R D ANGLE P R O J E C T I O N T H I S DRAWING IS UNPUBDI5HED. REDEASED FOR PUBUICATION BY ANP I NCORPORATED. ALL I N T E R N A T I O N A L 7 COPYRIGHT 19 2 <3> ,19 LOC DI ST R EV I 5 I 0 N 5 AJ 16 RI GH TS R ESERVED. P F LTR ZONE

zener diodes color coded

Abstract: 20A8 zener de 5.1V transistor 2028 Z2SMB28B
Contextual Info: 2.0W Surface Mount Zener Diodes Z2SMB6.8B – Z2SMB51B 2.0W Surface Mount Zener Diodes Features • Low profile package • Built-in strain relief • • • • • • Low inductance Complete voltage range 6.8 to 51V SMB DO-214AA Typical ID less than 1.0µA above 11V

Thermal Resistance to ambient SMB Case

Abstract: zener diode 47-10 1SMB2EZ10 1SMB2EZ100 1SMB2EZ11 1SMB2EZ12 1SMB2EZ13 diode SMB case
Contextual Info: 1SMB2EZ6.8~1SMB2EZ100 GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 6.8 to 100 Volts POWER 2.0 Watts SMB/DO-214AA Unit: inch mm FEATURES • Low profile package .155(3.94) .130(3.30) • Built-in strain relief • Plastic package has Underwriters Laboratory Flammability

1SMB2EZ13

Abstract: 1SMB2EZ51 1SMB2EZ10 1SMB2EZ11 1SMB2EZ12 E1A-481
Contextual Info: 1SMB2EZ6.8~1SMB2EZ51 GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 6.8 to 51 Volts POWER 2.0 Watts FEATURES • Low profile package • Built-in strain relief • Glass passivated iunction • Low inductance • Typical ID less than 1.0µA above 11V

Photodiodes

Abstract: Phototransistors Infrared LED 940nm i r led 940nm
Contextual Info: INFRARED S E R I E S SELECTION GUIDE PART NO. SYSTEM • INFRARED EMITTIMG DIODES : • PHOTODIODES : LAMP CATEGORY • PHOTOTRANSISTORS : • PHOTOREFLECTORS : | pSIl LIGHT SOURCE | |- LENS APPEARANCE I 1 ^ 1 ^ [T"|

Contextual Info: 1SMB2EZ6.8~1SMB2EZ51 GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 6.8 to 51 Volts POWER 2.0 Watts FEATURES • Low profile package • Built-in strain relief • Glass passivated iunction • Low inductance • Typical ID less than 1.0µA above 11V

Contextual Info: Signal Sources Options 118 Fast Pulse Modulator 2026A/B Option 118 Fast Pulse Modulator extends the application of 2026A/B 2 and 3 source signal generators to the testing of IFF radar and ECM receivers • Two or three high quality RF signal generators in a space efficient format

GB15XP120K

Contextual Info: Bulletin I27169 Rev.D 10/03 GB15XP120K Three Phase Inverter Module in MTP Package 1200V NPT IGBT & Hexfredtm Diodes Features • Gen. 5 NPT 1200V IGBT Technology • HEXFRED TM Diode with UltraSoft Reverse Recovery • Very Low Conduction and Switching Losses

Contextual Info: Signal Sources 2023N Signal Generator With its level of performance, this compact general purpose signal generator delivers outstanding value for money. • Wide frequency coverage:9 kHz to 1.2 GHz • Excellent spectral purity • Linear and logarithmic sweep mode

Contextual Info: Bulletin I27169 Rev.D 10/03 GB15XP120K Three Phase Inverter Module in MTP Package 1200V NPT IGBT & Hexfredtm Diodes Features • Gen. 5 NPT 1200V IGBT Technology • HEXFRED TM Diode with UltraSoft Reverse Recovery • Very Low Conduction and Switching Losses

Contextual Info: AOWF12T60P 600V,12A N-Channel MOSFET General Description Product Summary • Trench Power AlphaMOS-II technology • Low RDS ON • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant VDS @ Tj,max 700V IDM 48A RDS(ON),max < 0.52Ω

Contextual Info: AOB12T60P/AOTF12T60P 600V,12A N-Channel MOSFET General Description Product Summary • Trench Power AlphaMOS-II technology • Low RDS ON • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant VDS @ Tj,max 700V IDM 48A RDS(ON),max

12seg

Contextual Info: TO SHIBA TMP47P1620V CMOS 4-BIT MICROCONTROLLER TMP47P1620VF The 47P1620V is the system evaluation LSI of 47C1220 / 1620 with 128K bits one-time PROM. The 47P1620V programs/verifies using an adapter socket to connect with PROM programmer, as it is in TMM27128AD.

Contextual Info: 4 PACKAGE CODES PKG COSE a C S C B iP T IO N PAG E# C5 S ID E B R A Z E D , 3 0 0 M ILS , 2 8 PIN S D1 C E R D IP , 3 0 0 M ILS , 18 P IN S 164 D2 C E R D IP , 3 0 0 M ILS , 2 0 P IN S 1 64 163 D3 C E R D IP , 3 0 0 M ILS , 22 P IN S 164 D3-1 C E R D IP , 4 0 0 M ILS , 22 P IN S

TEA 2029 A

Abstract: MPC860 jtag tea 2030 MPC860 PA10 PA11 PA13 PA15 PB30 PB31
Contextual Info: SECTION 20 ELECTRICAL CHARACTERISTICS This section contains detailed information on power considerations, DC/AC electrical characteristics, and AC timing specifications for the MPC860. NOTE The MPC860 electrical specifications are preliminary and many specs are from design simulations. These specifications may

IRFF320R

Abstract: IRFF323R IRFF321R IRFF322R
Contextual Info: Rugged Power MOSFETs_ IRFF320R, IRFF321R, IRFF322R, IRFF323R File Number 2028 Avalanche Energy Rated N-Channel Power MOSFETs 2-OA a nd 2.5A, 350V -400V ros on = 1 .8 0 a nd 2 .5 0 N-CHANNEL ENHANCEMENT MODE D Feature«: • ■ ■ ■

MPC860 memory controller

Contextual Info: SECTION 20 ELECTRICAL CHARACTERISTICS This section contains detailed information on power considerations, DC/AC electrical characteristics, and AC timing specifications for the MPC860. NOTE The MPC860 electrical specifications are preliminary and many specs are from design simulations. These specifications may