PCH MOS FET Search Results

US5U29

Contextual Info: US5U29 Transistor 2.5V Drive Pch+SBD MOS FET US5U29 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TUMT5 2.0 0.2 1.7 (2) (3) 0~0.1 0.2 (1) 0.77 (4) 2.1 (5) 1pin mark zFeatures 1) The US5U29 combines Pch MOS FET with a

Contextual Info: SP8J2 Transistors 4V Drive Pch+Pch MOS FET SP8J2 zStructure Silicon P-channel MOS FET zExternal dimensions Unit : mm SOP8 5.0 1.75 0.4 (5) (1) (4) 0.2 1.27 1pin mark 0.4Min. 3.9 6.0 zFeatures 1) Low On-resistance. (57mΩ at 4.5V) 2) High Power Package. (PD=2.0W)

Contextual Info: Preliminary Datasheet R2J25953SP H-Bridge Control High Speed Power Switching with Built-in Driver IC and Power MOS FET R07DS0044EJ0400 Rev.4.00 May 09, 2013 Description The R2J25953 multi-chip module incorporates high-side Pch MOS FET, low-side Nch MOS FET, and Bi-CMOS driver

RSS040P03

Contextual Info: RSS040P03 Transistors 4V Drive Pch MOS FET RSS040P03 zStructure Silicon P-channel MOS FET zExternal dimensions Unit : mm SOP8 5.0 1.75 0.4 (5) (1) (4) 1pin mark zApplication Power switching, DC / DC converter. Each lead has same dimensions zPackaging specifications

Contextual Info: RSQ030P03 Transistor 4V Drive Pch MOS FET RSQ030P03 zStructure Silicon P-channel MOS FET zExternal dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) Low On-resistance.(90mΩ at 4.5V) 2) High Power Package. (PD=1.25w) 3) High speed switching.

RSR025P03

Abstract: TSMT3
Contextual Info: RSR025P03 Transistors 4V Drive Pch MOS FET RSR025P03 zStructure Silicon P-channel MOS FET zExternal dimensions Unit : mm TSMT3 1.0MAX zFeatures 1) Low On-resistance 2) Space saving−small surface mount package (TSMT3) 3) 4V drive 2.9 0.85 0.4 0.7 1.6 2.8

Contextual Info: RSQ025P03 Transistor 4V Drive Pch MOS FET RSQ025P03 zStructure Silicon P-channel MOS FET zExternal dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) Low On-resistance.(120mΩ at 4.5V) 2) High Power Package.(PD=1.25W) 3) High speed switching.

Contextual Info: RTR030P02 Transistors 2.5V Drive Pch MOS FET RTR030P02 zExternal dimensions Unit : mm zStructure Silicon P-channel MOS FET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 (3) 1.6 2.8 zFeatures 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3).

FET SP8M4

Abstract: SP8M4 SP8M
Contextual Info: SP8M4 Transistors 4V Drive Nch+Pch MOS FET SP8M4 zStructure Silicon N-channel / P-channel MOS FET zExternal dimensions Unit : mm SOP8 5.0 zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). 1.75 0.4 (5)

RTR030P02

Contextual Info: RTR030P02 Transistors 2.5V Drive Pch MOS FET RTR030P02 zExternal dimensions Unit : mm zStructure Silicon P-channel MOS FET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 (3) 1.6 2.8 zFeatures 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3).

Contextual Info: SSM5G09TU Silicon P Channel MOS Type U-MOSⅢ /Silicon Epitaxial Schottky Barrier Diode SSM5G09TU DC-DC Converter Unit: mm • Combined Pch MOSFET and Schottky Diode into one Package. • Low RDS (ON) and Low VF Absolute Maximum Ratings (Ta = 25°C) MOSFET

Contextual Info: RTQ025P02 Transistor 2.5V Drive Pch MOS FET RTQ025P02 zExternal dimensions Unit : mm zStructure Silicon P-channel MOSFET TSMT6 zFeatures 1) Low On-resistance.(140mΩ at 2.5V) 2) High Power Package. 3) High speed switching. 4) Low voltage drive.(2.5V) 1.0MAX

Contextual Info: RTQ030P02 Transistor 2.5V Drive Pch MOS FET RTQ030P02 zExternal dimensions Unit : mm zStructure Silicon P-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) Low On-resistance.(110mΩ at 2.5V) 2) High Power Package. 3) High speed switching. 4) Low voltage drive.(2.5V)

2sk type

Abstract: transistor+2sk
Contextual Info: Field Effect Transistors • Silicon MOS FETs # For Medium-Output Electrical Characteristics Ta = 2 5 °C Absolute Maximum Ratings (Ta —25 °C) Application Pch Switching b (A) (W) max. (fi) 1 Y* 1 typ. (S) (ns) ti (ns) td(off) (ns) Package (V) (on) ton

FX50KMJ-03

Contextual Info: FX50KMJ-03 High-Speed Switching Use Pch Power MOS FET REJ03G1450-0200 Previous: MEJ02G0268-0101 Rev.2.00 Aug 07, 2006 Features • • • • • • Drive voltage : 4 V VDSS : –30 V rDS(ON) (max) : 35 mΩ ID : –50 A Integrated Fast Recovery Diode (TYP.) : 55 ns

Contextual Info: FX20KMJ-2 High-Speed Switching Use Pch Power MOS FET REJ03G1443-0200 Previous: MEJ02G0282-0101 Rev.2.00 Aug 07, 2006 Features • • • • • • Drive voltage : 4 V VDSS : – 100 V rDS(ON) (max) : 0.26 Ω ID : – 20 A Integrated Fast Recovery Diode (TYP.) : 100 ns

Contextual Info: FX30KMJ-06 High-Speed Switching Use Pch Power MOS FET REJ03G1446-0200 Previous: MEJ02G0276-0101 Rev.2.00 Aug 07, 2006 Features • • • • • • Drive voltage : 4 V VDSS : –60 V rDS(ON) (max) : 54 mΩ ID : –30 A Integrated Fast Recovery Diode (TYP.) : 55 ns

Contextual Info: FX20ASJ-2 High-Speed Switching Use Pch Power MOS FET REJ03G1441-0200 Previous: MEJ02G0281-0101 Rev.2.00 Aug 07, 2006 Features • • • • • Drive voltage : 4 V VDSS : – 100 V rDS(ON) (max) : 0.26 Ω ID : – 20 A Integrated Fast Recovery Diode (TYP.) : 100 ns

FX20KMJ-06

Contextual Info: FX20KMJ-06 High-Speed Switching Use Pch Power MOS FET REJ03G1442-0200 Previous: MEJ02G0275-0101 Rev.2.00 Aug 07, 2006 Features • • • • • • Drive voltage : 4 V VDSS : – 60 V rDS(ON) (max) : 97 mΩ ID : – 20 A Integrated Fast Recovery Diode (TYP.) : 50 ns

Contextual Info: HAT3006R Silicon N Channel / P Channel Power MOS FET High Speed Power Switching HITACHI Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP-8 4 7 8 D D 5 6 D D ò ô Neh Pch S1 S3 1, 3 Source

GRM31CB31E106KA75L

Abstract: RB050LA-30 GRM32EB31H475KA87L
Contextual Info: LED Driver series for lighting Step-down type with 1.5A output No.09093EAT01 BD9207FPS ●Description BD9207FPS is a LED driver with built-in step-down switching regulator and incorporates the built-in switching MOS EFT of Pch. Feedback voltage is as low as 0.2V and can suppress the loss on the sense resistance of LED.

MP6404

Abstract: 2-32C1K
Contextual Info: MP6404 TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type L2-π-MOSV 6 in 1 MP6404 Industrial Applications High Power High Speed Switching Applications 3-Phase Motor Drive and Stepping Motor Drive Applications • 4 V gate drive • Small package by full molding (SIP 12 pin)

Contextual Info: Doc No. TT4-EA-10567 Revision. 2 Product Standards MOS FET MTM763200LBF MTM763200LBF Silicon N-channel MOSFET FET1 Silicon P-channel MOSFET (FET2) Unit : mm 2.0 For Switching For DC-DC Converter 0.2 0.13 6 5 4 1 2 3  Low Drain-source On-state Resistance :

2N5640 MOTOROLA

Abstract: Motorola 2n4393 2N4393 motorola 2N4092 2N4352 2N4352 FET 2N4391 MOTOROLA 2N5639 MOTOROLA 2N5640 MPF970
Contextual Info: Transistors Field effect transistors M otorola offers a line o f field -effect transistors th at encompasses the latest technology and covers the full range of F E T applications. Included is a wide variety o f junction FETs and M O S FE T s, w ith N- or P-channel polarity w ith both single and dual gates. These FETs include devices developed fo r operation