PARTMARKING 6 C Search Results

BC857

Abstract: BC856A BC856B BC857A BC857B BC857C BC858A BC858B BC858C BC859A
Contextual Info: SOT23 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTORS BC856 BC858 BC860 ISSUE 6 - APRIL 1997 PARTMARKING DETAILS COMPLEMENTARY TYPES BC856A–3A BC856 BC858C–3L BC846 BC856B–Z3B BC859A–Z4A BC857 BC847 BC857A–Z3E BC859B–4B BC858 BC848 BC857B–3F BC859C–Z4C

BC850 SOT23

Contextual Info: BC847 BC849 BC846 BC848 BC850 SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS ISSUE 6 - JANUARY 1997 PARTMARKING DETAILS COMPLEMENTARY TYPES BC846A-Z1A BC848B-1K BC846 BC856 BC846B-1B BC848C-Z1L BC847 BC857 BC847A-Z1E BC849B-2B BC848 BC858 BC847B-1F BC849C-2C

ZVN4210

Abstract: resh S10A fet ZVN4210G DSA003737
Contextual Info: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4210G ISSUE 2 - NOVEMBER 1995 FEATURES * Low RDS on = 1.5Ω PARTMARKING DETAIL - ZVN4210 VGS= 10V 9V 8V 7V ID - Drain Current (Amps) 5 4 3 6V 5V 2 4V 3.5V 3V 2.5V 2V 10 1 1 2 3 4 5 6 7 8 9 VDS - Drain Source Voltage (Volts)

Contextual Info: BAV74 Circuit For Measuring Switching Time lF=10mA 0.2|xF Trr1 Pulse is supplied by a generator with the following characteristics: Output is monitored on a sampling oscilloscope with the following characteristics: Output impedance = 50iJ Input impedance = 5012

BAV99a7

Abstract: BAR99 BAV99
Contextual Info: SWITCHING CIRCUIT Recovery Time Equivalent Test Circuit Pulse Generator Pulse rise time < = 0.5ns Pulse width = 100ns Oscilloscope rise time < 0.35ns Adjust VBfor IF= 10mA Output Waveform t Above sw itching diagram also applies to device types - BAL99 BAR99

FMMT4401

Abstract: FMMT4400 DSA003694
Contextual Info: FMMT4400 FMMT4401 SWITCHING CHARACTERISTICS at Tamb= 25°C PARAMETER SYMBOL Turn-On Time ton Turn-Off Time t off MIN. MAX. UNIT CONDITIONS 35 ns VCC=30V, VBE(off)=2V IC=150mA, IB1=15mA (See Fig.1) 255 ns VCC=30V, IC=150mA IB1=IB2=15mA (See Fig. 2) SOT23 NPN SILICON PLANAR

FMMTA93

Abstract: FMMTA93R FMMTA42 FMMTA43 FMMTA92 FMMTA92R DSA003704
Contextual Info: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTORS FMMTA92 FMMTA93 ISSUE 3 - JANUARY 1996 PARTMARKING DETAILS: Static Forward Current Transfer Ratio TYPICAL CHARACTERISTICS f Transition Frequency MHz 60 V+-=10V 50 40 0.1 10 1.0 100 130 110 90 SOT23 PARAMETER

FMMZ5244

Abstract: zr 74 VP-1-1V FMMZ5248 8Y SOT23 fmmz5242
Contextual Info: FMMZ5232 to FMMZ5257 ELECTRICAL CHARACTERISTICS at Tamb= 25°C . Type No Max. Zener Impedance Nominal Zener Voltage v z@lzr Test Current 'zr V mA 5.6 20 FMMZ5233 6 20 7 1600 FMMZ5234 6.2 20 7 1000 FMMZ5235 6.8 20 5 750 FMMZ5232 Zzr@ 'zr ZZT@ 'zK =0.25171^

ZC2800E

Abstract: MV SOT23 ZC2811E ZC5800E DSA003721
Contextual Info: ZC2800E ZC2811E ZC5800E ZC2800E ZC2811E ZC5800E SOT23 SCHOTTKY BARRIER DIODES ISSUE 2 – MARCH 1995 TYPICAL CHARACTERISTICS 0.8  0.8 0.6 I =10mA F F 0.4 0.4 3 ! I =1.0mA F I =1.0mA 2 1 PARTMARKING DETAIL ZC2800E – E6 ZC2811E – E8 ZC5800E – E9 0.6 I =10mA

FZT869

Abstract: DSA003718
Contextual Info: SOT223 NPN SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTOR FZT869 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V(BR)CBO 60 Collector-Emitter Breakdown Voltag V(BR)CER

FMMD2836

Abstract: DSA003689
Contextual Info: SOT23 SILICON PLANAR HIGH SPEED SWITCHING COMMON ANODE DIODE PAIR FMMD2836 FMMD2836 ISSUE 1 – FEBRUARY 1995 DIM 2 1 3 Millimeters Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C – 1.10 – 0.043 D 0.37 0.53 0.0145 0.021 F 0.085 0.15

zener 8m

Abstract: FMMZ5232 8Y SOT23 FMMZ5233 FMMZ5234 FMMZ5235 FMMZ5236 FMMZ5237 FMMZ5238 FMMZ5239
Contextual Info: FMMZ5232 to FMMZ5257 ISSUE 2 - SEPTEMBER 1995 ELECTRICAL CHARACTERISTICS at Tamb = 25°C . Type No FMMZ5232 to FMMZ5257 SOT23 SILICON VOLTAGE REGULATOR DIODES ✪ PIN CONFIGURATION Test Max. Zener Max. Reverse Leakage Current Max. Zener Nominal Current Impedance

BA 516 diode

Contextual Info: BAV70 SOT23 SILICON PLANAR HIGH SPEED SWITCHING DIODE PAIR COMMON CATHODE BA V 7 0 - ISSUE 2 - JANUARY 1995 PIN CONFIGURATION 1 PARTMARKING DETAIL BAV70- A4 Ai i SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT C ontinuous Reverse Voltage

FMMD2838

Abstract: DSA003690
Contextual Info: SOT23 SILICON PLANAR HIGH SPEED SWITCHING COMMON CATHODE DIODE PAIR FLLD2838 FMMD2838 ISSUE 2 – NOVEMBER 1996 DIM 2 1 3 Millimeters Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C – 1.10 – 0.043 D 0.37 0.53 0.0145 0.021 F 0.085

fzt849

Abstract: FZT949 DSA003717
Contextual Info: SOT223 NPN SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTOR FZT849 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V(BR)CBO 80 Collector-Emitter Breakdown Voltage V(BR)CER

FMMT455

Abstract: B455 DSA003695
Contextual Info: FMMT455 tf ts ns µS tr 0.4 tf Switching time - Volts 0.3 IC/IB=10 0.2 0.1 400 6 IB1=IB2=IC/10 VCE=10V 700 600 td 500 0.1 400 50 1 300 0.01 1 I+ - Collector Current (Amps) 0.1 1 I+ - Collector Current (Amps) VCE(sat) v IC Typical Switching Speeds 1.0 IC/IB=10

FZT968

Abstract: DSA003719 10/04/10M
Contextual Info: SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE POWER TRANSISTOR FZT968 ISSUE 3 – OCTOBER 1995 FEATURES * Extremely low equivalent on-resistance; RCE(sat) 44mΩ at 5A * 6 Amps continuous current (Up to 20 Amps peak ) * High gain and very low saturation voltage

FZT653

Abstract: FZT753 DSA003712
Contextual Info: SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR FZT653 FZT653 ISSUE 3– FEBRUARY 1995 FEATURES * Low saturation voltage TYPICAL CHARACTERISTICS 0.6 C COMPLEMENTARY TYPE – FZT753 PARTMARKING DETAIL – FZT653 E 0.5 0.4 0.3 B 175 VCE=2V ABSOLUTE MAXIMUM RATINGS.

FZT2222A

Abstract: 1N916 FZT2907A DSA003708
Contextual Info: FZT2222A ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL VALUE MIN. Transition Frequency 300 fT UNIT CONDITIONS. MHz IC=20mA, VCE=20V f=100MHz MAX. Output Capacitance Cobo 8 pF VCB=10V, IE=0, f=140KHz Input Capacitance

ZVP2110

Abstract: ZVN2110G ZVN211 ZVP2110G sot223 p-channel DSA0037405
Contextual Info: SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2110G TYPICAL CHARACTERISTICS VGS= -20V -16V -1.6 - Drain Current Amps g -Transconductance (mS) 250 200 VDS=-10V 150 100 50 BI -1.4 -12V -10V -9V -8V -1.2 -1.0 -0.8 -6V -0.4 -5V -4.5V -4V -3.5V I -2

TRANSISTOR SOT23, Vbe 8V

Abstract: FMMT614 DSA003700
Contextual Info: SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FMMT614 TYPICAL CHARACTERISTICS 2 2 +25°C I+/I*=1000 1m 75k 10m 100m 1 10 1m 100m 10m 1 IC - Collector Current A IC - Collector Current (A) VCE(sat) v IC VCE(sat) v IC 2.4 V+-=5V ABSOLUTE MAXIMUM RATINGS.

equivalent FZT651

Abstract: FZT651 FZT751 DSA003712
Contextual Info: SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTORS FZT651 FZT651 ISSUE 2 – FEBRUARY 1995 FEATURES * 60 Volt VCEO * 3 Amp continuous current * Low saturation voltage TYPICAL CHARACTERISTICS 0.6 C 0.5 225 0.3 VCE=2V ABSOLUTE MAXIMUM RATINGS. V 75 0.0001

fmmt417

Abstract: FMMT415 transistor 200V 100MA NPN npn 100n 1a AVALANCHE TRANSISTOR DSA003693 620PF
Contextual Info: FMMT415 FMMT417 TYPICAL CHARACTERISTICS 180 160 80 30 100 3. 20 40 20 40 60 80 100 120 140 160 180 -60 -40 -20 0 Maximum Avalanche Current v Pulse Width IUSB v Temperature for the specified conditions 100 220 80 200 V+- =10V - V 175°C 60 Risetime of Base

FMMD2835

Abstract: ay 5 3510
Contextual Info: FMMD2835 DIIV Millimeters Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 0.043 C - 1.10 - D 0.37 0.53 0.0145 0.021 F 0.085 0.15 0.0033 0.0059 G NOM 1.9 K 0.01 L 2.10 N NOM 0.075 0.10 0.0004 0.004 2.50 0.0825 0.0985 NOM 0.95 NOM 0.37