PARTMARKING 6 C Search Results

Contextual Info: SOT89 IMPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FCX604 FEATURES: * 1A CONTINUOUS COLLECTOR CURRENT * 1.5W POWER DISSIPATION * GUARANTEED HFE SPECIFIED UP TO 2A * FAST SW ITCHING PARTMARKING DETAIL - 6 0 4 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL

BC857

Abstract: BC856A BC856B BC857A BC857B BC857C BC858A BC858B BC858C BC859A
Contextual Info: SOT23 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTORS BC856 BC858 BC860 ISSUE 6 - APRIL 1997 PARTMARKING DETAILS COMPLEMENTARY TYPES BC856A–3A BC856 BC858C–3L BC846 BC856B–Z3B BC859A–Z4A BC857 BC847 BC857A–Z3E BC859B–4B BC858 BC848 BC857B–3F BC859C–Z4C

BC848 equivalent

Abstract: bc847 X10-4 BC849C-2C spice bc847 BC846B BC847A BC847C BC848A BC848C
Contextual Info: SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS BC846 BC848 BC850 ISSUE 6 - JANUARY 1997 PARTMARKING DETAILS BC847 BC849 COMPLEMENTARY TYPES BC846A–Z1A BC848B–1K BC846 BC856 BC846B–1B BC848C–Z1L BC847 BC857 BC847A–Z1E BC849B–2B BC848 BC858 BC847B–1F

BC850 SOT23

Contextual Info: BC847 BC849 BC846 BC848 BC850 SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS ISSUE 6 - JANUARY 1997 PARTMARKING DETAILS COMPLEMENTARY TYPES BC846A-Z1A BC848B-1K BC846 BC856 BC846B-1B BC848C-Z1L BC847 BC857 BC847A-Z1E BC849B-2B BC848 BC858 BC847B-1F BC849C-2C

BCX55C

Abstract: BCX51 BCX51-10-AC BCX51-16-AD BCX52 BCX52-10-AG BCX52-16-AM BCX53 BCX54 BCX55
Contextual Info: SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS lee,e9 Ccnnl lAnu.nmc n Gii2 COMPLEMENTARY I TYPE - BCX51 - BCX54 BCX52 - BCX55 c BCX53 - BCX56 PARTMARKING BCX51 DETAILS - -AA BCX52 - AE BCX53-I O- AK E \@ c BCX53-I 6- AL BCX52-16-AM BCX51-16-AD - AH BCX53

ZVN4210

Abstract: resh S10A fet ZVN4210G DSA003737
Contextual Info: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4210G ISSUE 2 - NOVEMBER 1995 FEATURES * Low RDS on = 1.5Ω PARTMARKING DETAIL - ZVN4210 VGS= 10V 9V 8V 7V ID - Drain Current (Amps) 5 4 3 6V 5V 2 4V 3.5V 3V 2.5V 2V 10 1 1 2 3 4 5 6 7 8 9 VDS - Drain Source Voltage (Volts)

Contextual Info: BAV74 Circuit For Measuring Switching Time lF=10mA 0.2|xF Trr1 Pulse is supplied by a generator with the following characteristics: Output is monitored on a sampling oscilloscope with the following characteristics: Output impedance = 50iJ Input impedance = 5012

Contextual Info: FMMT4400 FMMT4401 SWITCHING CHARACTERISTICS at TambF 25°C PARAMETER SYM BOL Turn-On Time Turn-Off Time MIN. MAX. UNIT ^on 35 ns toff 255 ns PAGE NUMBER CONDITIONS VCC=30V, VBE(off)=2V lc=150mA, lBi=15mA (See Fig. 1) VC (r30V, lc=150mA Ib H b 2= 15mA (See Fig. 2)

BAV99a7

Abstract: BAR99 BAV99
Contextual Info: SWITCHING CIRCUIT Recovery Time Equivalent Test Circuit Pulse Generator Pulse rise time < = 0.5ns Pulse width = 100ns Oscilloscope rise time < 0.35ns Adjust VBfor IF= 10mA Output Waveform t Above sw itching diagram also applies to device types - BAL99 BAR99

AVALANCHE TRANSISTOR

Abstract: FMMT413 SOT23 NPN LED driver 110V laser led DSA003671 avalanche mode transistor
Contextual Info: FMMT413 ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL Emitter Inductance Le Transition Frequency Collector-Base Capacitance MIN. TYP. MAX. UNIT CONDITIONS. 2.5 nH Standard SOT23 leads fT 150 MHz IC=10mA, VCE=5V f=20MHz Ccb 2 pF VCB=10V, IE=0 f=1MHz . SOT23 NPN SILICON PLANAR

FMMT4401

Abstract: FMMT4400 DSA003694
Contextual Info: FMMT4400 FMMT4401 SWITCHING CHARACTERISTICS at Tamb= 25°C PARAMETER SYMBOL Turn-On Time ton Turn-Off Time t off MIN. MAX. UNIT CONDITIONS 35 ns VCC=30V, VBE(off)=2V IC=150mA, IB1=15mA (See Fig.1) 255 ns VCC=30V, IC=150mA IB1=IB2=15mA (See Fig. 2) SOT23 NPN SILICON PLANAR

FMMTA93

Abstract: FMMTA93R FMMTA42 FMMTA43 FMMTA92 FMMTA92R DSA003704
Contextual Info: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTORS FMMTA92 FMMTA93 ISSUE 3 - JANUARY 1996 PARTMARKING DETAILS: Static Forward Current Transfer Ratio TYPICAL CHARACTERISTICS f Transition Frequency MHz 60 V+-=10V 50 40 0.1 10 1.0 100 130 110 90 SOT23 PARAMETER

FMMZ5244

Abstract: zr 74 VP-1-1V FMMZ5248 8Y SOT23 fmmz5242
Contextual Info: FMMZ5232 to FMMZ5257 ELECTRICAL CHARACTERISTICS at Tamb= 25°C . Type No Max. Zener Impedance Nominal Zener Voltage v z@lzr Test Current 'zr V mA 5.6 20 FMMZ5233 6 20 7 1600 FMMZ5234 6.2 20 7 1000 FMMZ5235 6.8 20 5 750 FMMZ5232 Zzr@ 'zr ZZT@ 'zK =0.25171^

FMMD2837

Abstract: 5467 diode DIODE a5 DSA003690
Contextual Info: SOT23 SILICON PLANAR HIGH SPEED SWITCHING COMMON CATHODE DIODE PAIR FMMD2837 FMMD2837 ISSUE 1 – FEBRUARY 1995 DIM 2 1 3 Millimeters Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C – 1.10 – 0.043 D 0.37 0.53 0.0145 0.021 F 0.085

FZT869

Abstract: DSA003718
Contextual Info: SOT223 NPN SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTOR FZT869 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V(BR)CBO 60 Collector-Emitter Breakdown Voltag V(BR)CER

FMMT3905

Abstract: fmmt3906 FMMT3904 equivalent 1n916 equivalent
Contextual Info: FMMT3905 FMMT3906 SWITCHING CHARACTERISTICS at Tamb=25 C unless otherwise stated PARAMETER SYM BOL FMMT3905 MIN MAX Delay Time Rise Time td tr 35 35 Storage Time ts tf Fall Time UNIT CONDITIONS 35 35 ns ns Vcc=-3V, VBE(offr0.5V 1^-IOm A, lBi=-1mA (See Fig. 1)

FMMD2836

Abstract: DSA003689
Contextual Info: SOT23 SILICON PLANAR HIGH SPEED SWITCHING COMMON ANODE DIODE PAIR FMMD2836 FMMD2836 ISSUE 1 – FEBRUARY 1995 DIM 2 1 3 Millimeters Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C – 1.10 – 0.043 D 0.37 0.53 0.0145 0.021 F 0.085 0.15

zener 8m

Abstract: FMMZ5232 8Y SOT23 FMMZ5233 FMMZ5234 FMMZ5235 FMMZ5236 FMMZ5237 FMMZ5238 FMMZ5239
Contextual Info: FMMZ5232 to FMMZ5257 ISSUE 2 - SEPTEMBER 1995 ELECTRICAL CHARACTERISTICS at Tamb = 25°C . Type No FMMZ5232 to FMMZ5257 SOT23 SILICON VOLTAGE REGULATOR DIODES ✪ PIN CONFIGURATION Test Max. Zener Max. Reverse Leakage Current Max. Zener Nominal Current Impedance

BA 516 diode

Contextual Info: BAV70 SOT23 SILICON PLANAR HIGH SPEED SWITCHING DIODE PAIR COMMON CATHODE BA V 7 0 - ISSUE 2 - JANUARY 1995 PIN CONFIGURATION 1 PARTMARKING DETAIL BAV70- A4 Ai i SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT C ontinuous Reverse Voltage

FMMD2838

Abstract: DSA003690
Contextual Info: SOT23 SILICON PLANAR HIGH SPEED SWITCHING COMMON CATHODE DIODE PAIR FLLD2838 FMMD2838 ISSUE 2 – NOVEMBER 1996 DIM 2 1 3 Millimeters Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C – 1.10 – 0.043 D 0.37 0.53 0.0145 0.021 F 0.085

FMMD2835

Abstract: A9 SOT23 diode A9 diode A9 sot23 DSA003689
Contextual Info: SOT23 SILICON PLANAR HIGH SPEED SWITCHING COMMON ANODE DIODE PAIR FMMD2835 FMMD2835 ISSUE 1 – FEBRUARY 1995 DIM 2 1 3 Millimeters Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C – 1.10 – 0.043 D 0.37 0.53 0.0145 0.021 F 0.085 0.15

FZT753

Abstract: FZT653 DSA003715
Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FZT753 TYPICAL CHARACTERISTICS 0.6 td Switching time - Volts 0.4 I+ /I*=10 V 0.3 0.2 tf ts ns ns 140 E COMPLEMENTARY TYPE – 1400 120 1200 100 1000 80 800 60 600 40 400 20 200 0.0001 0.001 0.01 0.1 1 PARTMARKING DETAIL –

P-Channel FET 100v

Abstract: PARTMARKING mr ZVP3310 zvp3310f ZVN3310F DSA0037411 zvp331
Contextual Info: ZVP3310F TYPICAL CHARACTERISTICS VGS= -20V -16V -14V -12V -10V -9V -8V -7V -6V -0.2 -5V -4V -6 Drain Source -0.4 -8 -4 ID= -0.3A -2 -0.15A -0.075A -2 -4 -6 -8 -10 V I - Drain Current Amps -0.6 -10 -6 -8 -10 Voltage Saturation Characteristics Saturation Characteristics

FET SOT23 60V

Abstract: ML SOT23 ZVP3306F ZVN3306F DSA0037409
Contextual Info: ZVP3306F TYPICAL CHARACTERISTICS -4 -2 -200mA -100mA V Drain Source -6 -2 -4 -6 -8 I - Drain Current Amps ID= -400mA -8 -0.8 -12V -0.6 f=1MHz Ciss 20 Coss 10 Crss 5 / V -10 -20 -30 -40 -50 -60 1 -8 -10 Note:ID=- 0.2A VDS= -20V-40V -60V -4 -6 -8 -10 -12 -14