PARTMARKING 6 C Search Results

ZVN4210

Abstract: resh S10A fet ZVN4210G DSA003737
Contextual Info: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4210G ISSUE 2 - NOVEMBER 1995 FEATURES * Low RDS on = 1.5Ω PARTMARKING DETAIL - ZVN4210 VGS= 10V 9V 8V 7V ID - Drain Current (Amps) 5 4 3 6V 5V 2 4V 3.5V 3V 2.5V 2V 10 1 1 2 3 4 5 6 7 8 9 VDS - Drain Source Voltage (Volts)

FMMT4401

Abstract: FMMT4400 DSA003694
Contextual Info: FMMT4400 FMMT4401 SWITCHING CHARACTERISTICS at Tamb= 25°C PARAMETER SYMBOL Turn-On Time ton Turn-Off Time t off MIN. MAX. UNIT CONDITIONS 35 ns VCC=30V, VBE(off)=2V IC=150mA, IB1=15mA (See Fig.1) 255 ns VCC=30V, IC=150mA IB1=IB2=15mA (See Fig. 2) SOT23 NPN SILICON PLANAR

FMMZ5244

Abstract: zr 74 VP-1-1V FMMZ5248 8Y SOT23 fmmz5242
Contextual Info: FMMZ5232 to FMMZ5257 ELECTRICAL CHARACTERISTICS at Tamb= 25°C . Type No Max. Zener Impedance Nominal Zener Voltage v z@lzr Test Current 'zr V mA 5.6 20 FMMZ5233 6 20 7 1600 FMMZ5234 6.2 20 7 1000 FMMZ5235 6.8 20 5 750 FMMZ5232 Zzr@ 'zr ZZT@ 'zK =0.25171^

FZT869

Abstract: DSA003718
Contextual Info: SOT223 NPN SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTOR FZT869 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V(BR)CBO 60 Collector-Emitter Breakdown Voltag V(BR)CER

FMMD2836

Abstract: DSA003689
Contextual Info: SOT23 SILICON PLANAR HIGH SPEED SWITCHING COMMON ANODE DIODE PAIR FMMD2836 FMMD2836 ISSUE 1 – FEBRUARY 1995 DIM 2 1 3 Millimeters Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C – 1.10 – 0.043 D 0.37 0.53 0.0145 0.021 F 0.085 0.15

zener 8m

Abstract: FMMZ5232 8Y SOT23 FMMZ5233 FMMZ5234 FMMZ5235 FMMZ5236 FMMZ5237 FMMZ5238 FMMZ5239
Contextual Info: FMMZ5232 to FMMZ5257 ISSUE 2 - SEPTEMBER 1995 ELECTRICAL CHARACTERISTICS at Tamb = 25°C . Type No FMMZ5232 to FMMZ5257 SOT23 SILICON VOLTAGE REGULATOR DIODES ✪ PIN CONFIGURATION Test Max. Zener Max. Reverse Leakage Current Max. Zener Nominal Current Impedance

fzt849

Abstract: FZT949 DSA003717
Contextual Info: SOT223 NPN SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTOR FZT849 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V(BR)CBO 80 Collector-Emitter Breakdown Voltage V(BR)CER

FZT968

Abstract: DSA003719 10/04/10M
Contextual Info: SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE POWER TRANSISTOR FZT968 ISSUE 3 – OCTOBER 1995 FEATURES * Extremely low equivalent on-resistance; RCE(sat) 44mΩ at 5A * 6 Amps continuous current (Up to 20 Amps peak ) * High gain and very low saturation voltage

FZT653

Abstract: FZT753 DSA003712
Contextual Info: SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR FZT653 FZT653 ISSUE 3– FEBRUARY 1995 FEATURES * Low saturation voltage TYPICAL CHARACTERISTICS 0.6 C COMPLEMENTARY TYPE – FZT753 PARTMARKING DETAIL – FZT653 E 0.5 0.4 0.3 B 175 VCE=2V ABSOLUTE MAXIMUM RATINGS.

FZT2222A

Abstract: 1N916 FZT2907A DSA003708
Contextual Info: FZT2222A ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL VALUE MIN. Transition Frequency 300 fT UNIT CONDITIONS. MHz IC=20mA, VCE=20V f=100MHz MAX. Output Capacitance Cobo 8 pF VCB=10V, IE=0, f=140KHz Input Capacitance

FMMD2835

Abstract: ay 5 3510
Contextual Info: FMMD2835 DIIV Millimeters Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 0.043 C - 1.10 - D 0.37 0.53 0.0145 0.021 F 0.085 0.15 0.0033 0.0059 G NOM 1.9 K 0.01 L 2.10 N NOM 0.075 0.10 0.0004 0.004 2.50 0.0825 0.0985 NOM 0.95 NOM 0.37

2801A1

Abstract: 100mA-1A FMMT493 FMMT593 DSA003696
Contextual Info: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT493 ISSUE 3 - NOVEMBER 1995 TYPICAL CHARACTERISTICS 0. 4 0. 4 +25 ° C t a I+/I*=10 I+/I*=50 0. 2 t) -55 ° C +25 ° C +100 ° C SYMBOL VALUE UNIT VCBO 120 V Collector-Emitter Voltage VCEO 100 V V 0. 1

c 10 ph diode

Abstract: FMMD2838 5467 diode ay 5 3510
Contextual Info: FLLD2838 DIIV Millimeters Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 0.043 C - 1.10 - D 0.37 0.53 0.0145 0.021 F 0.085 0.15 0.0033 0.0059 G NOM 1.9 K 0.01 L 2.10 N NOM 0.075 0.10 0.0004 0.004 2.50 0.0825 0.0985 NOM 0.95 NOM 0.37

FZT949

Abstract: FZT948 partmarking 5 C
Contextual Info: FZT948 FZT949 SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS ISSUE 2 - NOVEMBER 1995 FEATURES * Extremely low equivalent on-resistance; RCE(sat) * 6 Amps continuous current * Up to 20 Amps peak current * Very low saturation voltage * Excellent hFE characteristics specified upto 20 Amps

FMMTA42

Abstract: FZTA42 FZTA92 DSA003719
Contextual Info: SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZTA42 ISSUE 2 – NOVEMBER 93 ✪ FEATURES * Suitable for video output stages in TV sets and switch mode power supplies * High breakdown voltage C E C COMPLIMENTARY TYPE – FZTA92 PARTMARKING DETAIL – DEVICE TYPE IN FULL

AC/DC motorola

Abstract: MPC7410 MPC7410RX400LE MPC7410RX400NE MPC7410RX450LE MPC7410RX450NE MPC7410RX500LE
Contextual Info: Advance Information MPC7410RXNEPNS/D Rev. 1, 10/2002 MPC7410 Part Number Specification for the MPC7410RXnnnNE Series Motorola Part Numbers Affected: MPC7410RX400NE MPC7410RX450NE This document describes part-number-specific changes to recommended operating conditions

Contextual Info: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR BSS63 * COMPLEMENTARY TYPE - BSS64 PARTMARKING DETAILS - BSS63 = T3 BSS63R = T6 ABSOLUTE MAXIMUM RATINGS PARAMETER C ollector-B ase V oltage C o lle c to r-E m itte r V oltag e Em itter-Base V oltag e VALUE

hFE Group

Abstract: ZUMT850B ZUMT850C DSA0037341
Contextual Info: SOT323 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTOR ZUMT850B ZUMT850C ISSUE 1 - DECEMBER 1998 Partmarking Detail: ZUMT850B ZUMT850C - T1B - T21 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage

FMMT491

Abstract: FMMT591
Contextual Info: SOT23 PNP SILICON PLANAR MEDIUM FMMT591 POWER TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES , ! \ I LOW Equivalent on resistance RcE ~a =355mfl at 1A* E c COMPLEMENTARY PARTMARKING TYPE- FMMT491 DETAIL - 591 4BSOLUTE MAXIMUM RATINGS. VALUE SYMBOL PARAMETER Collector-Base

FZT948

Abstract: FZT949 DSA003718
Contextual Info: SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS ISSUE 2- NOVEMBER m 1995 FEATURES * Extremely low equivalent * 6 Amps continuous current on-resistance; RCE{W) * Up to 20 Amps peak current * Very low saturation voltage * Excellent hFEcharacteristics specified upto 20 Amps

FCX718TA

Abstract: FCX718
Contextual Info: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX718 ISSSUE 1 - DECEMBER 1998 FEATURES * 2W POWER DISSIPATION * * * * 6A Peak Pulse Current Excellent HFE Characteristics up to 6Amps Extremely Low Saturation Voltage E.g. 16mv Typ. Extremely Low Equivalent On-resistance;

M4306N

Abstract: M4306 ZDM4306
Contextual Info: SM-8 DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS D1 L J Di L _ L ZDM4306N - ISSUE 1 - NOVEMBER 1995 Gì = ° s , D2 I I I I g2 Dz I I I I s? PARTMARKING DETAIL - M4306N ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage

fzt855

Abstract: 100 Amp current 1000 volt diode FZT955 DSA003675
Contextual Info: SOT223 NPN SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTOR FZT855 ISSUE 4 - NOVEMBER 2001 ✪ FEATURES * Up to 5 Amps continuous collector current, up to 10 Amp peak C * * Very low saturation voltage Excellent hFE specified up to 10 Amps E PARTMARKING DETAIL COMPLEMENTARY TYPE -

T2907A

Contextual Info: FMMT2907 FMMT2907A S 0 T 2 3 PNP SILICON PLANAR SWITCHING TRANSISTORS PARTMARKING DETAILS: FM M T2907 - 2B FM M T2907A - 2F FMMT2907R - 4P FMMT2907AR - 5P ABSOLUTE MAXIMUM RATINGS SYM BO L PARAMETER C ollector-B ase V oltage C o lle c to r-E m itte r V oltag e